Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
07/2005
07/07/2005US20050145165 Lithium niobate substrate and method of producing the same
07/07/2005CA2548449A1 Method of incorporating a mark in cvd diamond
07/06/2005EP1551058A1 Annealed wafer and annealed wafer manufacturing method
07/06/2005EP1349700A4 Method of making optical fluoride laser crystal components
07/05/2005US6913647 Process for cooling a silicon ingot having a vacancy dominated region to produce defect free silicon
06/2005
06/30/2005WO2005023703A3 Method for producing at least one cavity in a material
06/30/2005US20050139576 Method and apparatus for fabricating flat panel display
06/30/2005US20050139152 Optical lithography fluoride crystal annealing furnace
06/30/2005US20050139147 Method for annealing group IIA metal fluoride crystals
06/22/2005EP1543181A1 Single crystal diamond
06/22/2005CN1207449C Substrate clamping devices for film growth by liquid phase extension
06/21/2005US6909165 Obverse/reverse discriminative rectangular nitride semiconductor wafer
06/16/2005US20050126471 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
06/16/2005DE102004056741A1 Lithium niobate substrate, useful as acoustic surface wave device for mobile telephones, is prepared by heat treating crystalline material at relatively low temperature
06/15/2005EP1542269A1 High-resistance silicon wafer and process for producing the same
06/15/2005EP1541722A1 Crystal base plate and pressing device
06/15/2005CN1628370A Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
06/14/2005US6905625 Plasma processing method and apparatus
06/09/2005WO2005053010A1 Annealed wafer and annealed wafer manufacturing method
06/09/2005US20050124139 Process of producing multicrystalline silicon substrate and solar cell
06/09/2005US20050120941 Methods for repair of single crystal superalloys by laser welding and products thereof
06/08/2005EP1538243A1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method
06/08/2005EP1537263A2 Semiconductor nanocrystal heterostructures
06/08/2005EP1537259A1 Coloured diamond
06/08/2005EP1537258A1 Method of fabricating substrates, in particular for optics, electronics or optoelectronics----------------------------------------
06/08/2005EP1536918A1 A method of polishing a wafer of material
06/07/2005US6903030 System and method for heat treating semiconductor
06/07/2005US6902989 Method for manufacturing gallium nitride (GaN) based single crystalline substrate that include separating from a growth substrate
06/07/2005US6902716 Combines deposition of synthetic diamond films with reactive etching processes; forming diamond nuclei on substrate, growing layer of textured diamond film on substrate, etching textured diamond film
06/07/2005US6902618 Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300 mm and its production method
06/02/2005US20050118349 Process of making a multilayer structure vapor deposition a layer of metal on substrate and detaching
06/02/2005US20050115491 Ion exchange waveguides and methods fabrication
06/01/2005CN1621578A Lithium niobate substrate and manufacturing method thereof
06/01/2005CN1204598C Preparation method of gamma-LiAl02/alpha-Al203 composite base material
06/01/2005CN1203965C Surface processing method for titanium-doped sapphire crystal laser rod
05/2005
05/26/2005US20050109270 Optical lithography fluoride crystal annealing furnace
05/26/2005US20050109269 Shaped nanocrystal particles and methods for working the same
05/25/2005EP1533402A1 Epitaxial wafer and its manufacturing method
05/25/2005EP1532676A2 Mechanical recycling of a wafer comprising a buffer layer, after having taken a layer therefrom
05/25/2005CN1203559C Method for manufacturing nitride semiconductor and method for making semiconductor device
05/24/2005US6898362 Three-dimensional photonic crystal waveguide structure and method
05/24/2005US6897084 Control of oxygen precipitate formation in high resistivity CZ silicon
05/24/2005US6896728 Process for producing low defect density, ideal oxygen precipitating silicon
05/24/2005US6896727 Method of determining nitrogen concentration within a wafer
05/19/2005US20050105869 Three-dimensional photonic crystal waveguide structure and method
05/19/2005DE10344602A1 Semiconductor wafers are formed by splitting a monocrystal, simultaneously grinding the front and back of wafers, etching and polishing
05/18/2005EP1531491A2 SiC device and method for manufacturing the same
05/17/2005US6894309 Spatial regions of a second material in a first material
05/17/2005US6893886 Method for processing one-dimensional nano-materials
05/17/2005US6893575 Mask and method of manufacturing the same, electro-luminescence device and method of manufacturing the same, and electronic instrument
05/12/2005US20050098096 High resistivity aluminum antimonide radiation and alpha-particle detector
05/12/2005US20050098092 Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof
05/10/2005US6890600 SiC single crystal, method for manufacturing SiC single crystal, SiC wafer having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device
05/05/2005US20050093101 Method of Manufacturing Nitride Substrate for Semiconductors, and Nitride Semiconductor Substrate
05/05/2005US20050092252 Plasma processing method and apparatus
05/05/2005US20050092229 Liquid crystal display device and fabricating method thereof
05/04/2005EP1528591A2 Method of manufacturing nitride substrate for semiconductors, and nitride semiconductor substrate
05/04/2005CN1612290A Method of manufacturing nitride substrate for semiconductors, and nitride semiconductor substrate
05/04/2005CN1611643A Exhaust pressure control method for rapid heat treatment system
05/03/2005US6888994 Optical device
05/03/2005US6887441 High resistivity aluminum antimonide radiation detector
04/2005
04/28/2005WO2005038899A1 Process for producing high resistance silicon wafer, and process for producing epitaxial wafer and soi wafer
04/28/2005WO2005038099A1 Lithium tantalate substrate and method for producing same
04/28/2005WO2005038098A1 Lithium tantalate substrate and method for producing same
04/28/2005WO2005038097A1 Lithium tantalate substrate and process for producing the same
04/28/2005US20050090079 Method for gettering transition metal impurities in silicon crystal
04/27/2005EP1222325B1 Method for producing czochralski silicon free of agglomerated self-interstitial defects
04/26/2005US6884721 Copper ions prevent contamination during storage to thereby prevent degradation of oxide dielectric breakdown voltage
04/21/2005US20050082615 Epitaxial ferroelectric thin-film device and method of manufacturing the same
04/21/2005US20050082348 Method for bonding glass or metal fluoride optical materials to metal
04/20/2005EP1524248A1 A method for bonding glass or metal fluoride optical materials to metal
04/19/2005US6881658 Process of and apparatus for heat-treating II-VI compound semiconductors and semiconductor heat-treated by the process
04/14/2005WO2005034218A2 Method of producing a plate-shaped structure, in particular, from silicon, use of said method and plate-shaped structure thus produced, in particular from silicon
04/14/2005WO2005007934A3 Method for producing piezoelectric monocrystals having a polydomain structure for accurate positioning devices
04/14/2005DE10343522A1 Verfahren zur Steuerung der Behandlung eines Kristalls mit einer Flüssigkeit A method of controlling the treatment of a crystal with a liquid
04/13/2005EP1522611A1 Diamond composite substrate and process for producing the same
04/13/2005CN1605661A N-type heat treatment process for HgCdTe materials grown from melting method
04/12/2005US6879143 Method of selectively aligning and positioning nanometer-scale components using AC fields
04/12/2005US6878640 Method for fabricating silicon targets
04/12/2005US6878630 Method of manufacturing a wafer
04/12/2005US6878201 Methods of making fluoride crystal and fluoride crystal lens
04/07/2005WO2005031829A1 Method of cleaning treatment and method for manufacturing semiconductor device
04/07/2005WO2005031825A1 Method for treating heteroepitaxially grown semi-conductor layers on semi-conductor substrates, semi-conductor substrate comprising a treated semi-conductor layer and semi-conductor component made of said type of semi-conductor substrate
04/07/2005WO2005031344A1 Method for controlling the treatment of a crystal by means of a liquid
04/07/2005WO2005031046A1 Spinel boules, wafers, and methods for fabricating same
04/07/2005WO2005031033A1 Method of making enhanced cvd diamond
04/07/2005WO2004079786A8 Apparatus and method for reducing impurities in a semiconductor material
04/07/2005US20050072754 Method of forming a liquid crystal display
04/06/2005CN1605116A Apparatus and method for heat treating semiconductor
04/05/2005US6875272 Method for preparing GaN based compound semiconductor crystal
04/05/2005US6874668 Telescoped multiwall nanotube and manufacture thereof
03/2005
03/31/2005US20050070059 Method of making thin silicon sheets for solar cells
03/31/2005US20050067065 From an article with an oriented microstructure by locating and locally melting the defect, and then epitaxially solidifying the melt; cobalt or nickel super alloy for gas turbines
03/31/2005US20050066879 Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal
03/30/2005EP1518947A2 Method of producing single-polarized lithium tantalate crystal and crystal thereby obtained.
03/29/2005US6872455 Such as boron and indium in silicon; tensile/compression strength
03/29/2005US6872422 Coloring gemstones; heat treatment
03/24/2005US20050065049 Chemical composition for use with group IIA metal fluorides
03/24/2005US20050064632 Soi wafer and method for manufacturing soi wafer
03/24/2005US20050061231 Spinel boules, wafers, and methods for fabricating same
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