| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 10/12/2005 | CN1222642C Semi-insulating silicon carbide without vanadium domination |
| 10/06/2005 | WO2005077589A3 Methods for repair of single crystal superalloys by laser welding and products thereof |
| 10/06/2005 | US20050217563 Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation |
| 10/05/2005 | EP1583140A1 Method for producing semiconductor single crystal wafer and laser processing device used therefor |
| 10/05/2005 | CN2730890Y Horizontal ion implantation silicon carbide high-temp. annealing device |
| 10/05/2005 | CN1679158A Recycling of a wafer comprising a buffer layer after having separated a thin layer therefrom by mechanical means |
| 10/05/2005 | CN1678772A Diboride single crystal substrate, semiconductor device using this and its manufacturing method |
| 10/05/2005 | CN1676626A Method for monitoring low-temperature rapid thermal annealing process |
| 10/04/2005 | US6951827 Controlling surface chemistry on solid substrates |
| 10/04/2005 | US6951695 Lapping, mechanical polishing, and reducing internal stress of a gallium, aluminum and indium nitride wafer by thermal annealing or chemical etching; crystallographic plane surfaces |
| 09/29/2005 | WO2005090651A1 Iron oxide whisker of high aspect ratio, titanium oxide whisker of high aspect ratio, structure containing these and process for producing them |
| 09/29/2005 | US20050211970 Metal nano-objects, formed on semiconductor surfaces, and method for making said nano-objects |
| 09/29/2005 | US20050211154 Nanocrystals with linear and branched topology |
| 09/28/2005 | EP1165864A4 Fabrication of periodic surface structures with nanometer-scale spacings |
| 09/22/2005 | WO2005087983A2 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys |
| 09/22/2005 | US20050205001 High resistivity aluminum antimonide radiation detector |
| 09/22/2005 | US20050205000 Low defect density silicon |
| 09/22/2005 | US20050204999 Method for making low-stress large-volume crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby |
| 09/22/2005 | US20050204998 Method for making low-stress large-volume not-(111)-oriented crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby |
| 09/22/2005 | DE102004010377A1 Herstellung von Substratwafern für defektarme Halbleiterbauteile, ihre Verwendung, sowie damit erhaltene Bauteile Preparation of substrate wafers for low-defect semiconductor devices, their use, and thus obtained components |
| 09/21/2005 | EP1060509B1 Crystal ion-slicing of single-crystal films |
| 09/20/2005 | US6946317 Method of fabricating heteroepitaxial microstructures |
| 09/15/2005 | WO2005007568A3 Gas storage medium and methods |
| 09/15/2005 | US20050202284 Protection of the SiC surface by a GaN layer |
| 09/13/2005 | US6943095 Low defect density (Ga, A1, In) N and HVPE process for making same |
| 09/08/2005 | US20050194352 Etching method, etched product formed by the same, and piezoelectric vibration device, method for producing the same |
| 09/08/2005 | US20050193942 Method for making substrate wafers for low-defect semiconductor components, obtained thereby and uses thereof |
| 09/08/2005 | DE102004008754A1 Herstellung von spannungsarmen, nicht (111)-orientierten, großvolumigen Einkristallen mit geringer Spannungsdoppelbrechung und homogener Brechzahl, sowie deren Verwendung Preparation of low stress not (111) oriented, large-volume single crystals of low birefringence and a homogeneous refractive index, and the use thereof |
| 09/08/2005 | DE102004008753A1 Process for preparation of a low stress large volume crystal of defined height and diameter having a small double refraction and homogeneous refractive index useful for production of optical elements, computer chips and integrated circuits |
| 09/08/2005 | DE102004008752A1 Herstellung von großvolumigen CaF2-Einkristallen für die Verwendung als optische Bauelemente mit einer optischen Achse parallel zur (100) oder (110)-Kristallachse Manufacture of large-volume CaF2 single crystals for use as optical components having an optical axis parallel to the (100) or (110) crystal axis |
| 09/07/2005 | EP1571242A2 Production of substrate wafers for low defect semiconductor components, applications thereof and components made therewith |
| 09/07/2005 | CN1218374C Semiconductor substrate based on III family nitride and its mfg. method |
| 09/06/2005 | US6939475 Etching method, etched product formed by the same, and piezoelectric vibration device, method for producing the same |
| 09/01/2005 | WO2005080948A1 Process for preparing caf2 lens blanks especially for 193 nm and 157 nm lithography with minimized defects |
| 09/01/2005 | WO2005080645A2 Diamond structure separation |
| 09/01/2005 | US20050188917 Method for manufacturing crystal plate |
| 08/31/2005 | CN1663033A Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| 08/31/2005 | CN1662448A Process for manufacturing a gallium rich gallium nitride film |
| 08/31/2005 | CN1217393C Method for thermal processing silicon chip and silicon chip produced with the same method |
| 08/25/2005 | WO2005077589A2 Methods for repair of single crystal superalloys by laser welding and products thereof |
| 08/25/2005 | WO2005013337A3 Rapid generation of nanoparticles from bulk solids at room temperature |
| 08/25/2005 | US20050183660 Method of identifying defect distribution in silicon single crystal ingot |
| 08/25/2005 | US20050183659 Method of making large-volume CaF2 single crystals for optical elements with an optic axis parallel to the (100)- or (110)-crystal axis and CaF2 single crystal made thereby |
| 08/24/2005 | EP1566472A2 Production of low stress non-(111) oriented large volume single crystals with low stress related birefringence and homogenous refractive index, as well as their application |
| 08/24/2005 | EP1566471A2 Production of low stress, large volume crystals with low stress related birefringence and homogenous refractive index and application thereof |
| 08/24/2005 | EP1566470A2 Production of a large volume CaF2 single crystal for application in an optical element with an optical axis parallel to the (100) or (110) crystal axis |
| 08/24/2005 | EP1565397A1 Dispersion of nanowires of semiconductor material |
| 08/24/2005 | CN1658451A Polygonal heat bonding composite laser medium and preparation method thereof |
| 08/18/2005 | WO2005076333A1 Method for manufacturing semiconductor wafer and system for determining cut position of semiconductor ingot |
| 08/18/2005 | US20050181210 Diamond structure separation |
| 08/18/2005 | US20050178316 Method and apparatus for purification of crystal material and for making crystals therefrom and use of crystals obtained thereby |
| 08/18/2005 | DE102004003829A1 Verfahren zum Reinigen von Kristallmaterial und zum Herstellen von Kristallen, eine Vorrichtung hierzu sowie die Verwendung der so erhaltenen Kristalle A method for cleaning crystal material and for the production of crystals, an apparatus therefor and to the use of the thus obtained crystals |
| 08/17/2005 | EP1563122A2 Method for forming carbon nanotubes |
| 08/17/2005 | CN1215205C Method for removing defects of single crystal material and single crystal material from which defects are removed by the method |
| 08/16/2005 | US6930026 Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon |
| 08/11/2005 | US20050176262 Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof |
| 08/11/2005 | DE19900091B4 Verfahren zur Beseitigung von eingewachsenen Defekten, die bei der Siliciumwaferherstellung entstanden sind sowie Tempervorrichtung zur Durchführung des Verfahrens A process for the removal of grown-in defects which have arisen in the silicon wafer fabrication and annealing apparatus for performing the method |
| 08/11/2005 | DE102004002109A1 Behandlung von Kristallen zur Vermeidung lichtinduzierter Änderungen des Brechungsindex Treatment of crystals in order to avoid light-induced changes in the refractive index |
| 08/10/2005 | CN1214697C Mask and its mfg. method, electroluminance device and its mfg. method |
| 08/09/2005 | US6926770 Method of fabricating two-dimensional ferroelectric nonlinear crystals with periodically inverted domains |
| 08/04/2005 | WO2005071144A1 Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium storing program for predicting precipitation behavior of oxygen in silicon single crystal |
| 08/04/2005 | US20050170610 Low defect density, ideal oxygen precipitating silicon |
| 08/04/2005 | US20050167008 Composite of polycrystalline chips with nanocrystalline microstructures formed from metals, metal alloys, intermetallic materials, of ceramic materials, in a matrix of metal, metal alloy, intermetallic materials, polymeric materials, or ceramics |
| 08/03/2005 | EP1560261A1 Method for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method |
| 08/03/2005 | EP1559812A1 Method of measuring point defect distribution of silicon single crystal ingot |
| 08/03/2005 | EP1392895B1 Semi-insulating silicon carbide without vanadium domination |
| 08/02/2005 | US6924509 Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer |
| 07/28/2005 | WO2005069356A1 Process for producing monocrystal thin film and monocrystal thin film device |
| 07/28/2005 | WO2005068690A1 Treatment of crystals in order to avoid light-induced modifications of the refraction index |
| 07/28/2005 | WO2005034218A3 Method of producing a plate-shaped structure, in particular, from silicon, use of said method and plate-shaped structure thus produced, in particular from silicon |
| 07/28/2005 | WO2004048258A8 Method for forming carbon nanotubes |
| 07/28/2005 | US20050164516 Method and structure for graded gate oxides on vertical and non-planar surfaces |
| 07/28/2005 | US20050163280 Integrated crystal mounting and alignment system for high-throughput biological crystallography |
| 07/28/2005 | US20050160968 Diamond composite substrate and process for producing the same |
| 07/28/2005 | US20050160967 Process for preparing single crystal silicon having improved gate oxide integrity |
| 07/28/2005 | DE10393440T5 Verfahren zum Behandeln von Halbleitermaterial A process for treating semiconductor material |
| 07/27/2005 | EP1557883A1 Soi wafer and method for manufacturing soi wafer |
| 07/27/2005 | EP1557879A2 Method of forming connection hole |
| 07/27/2005 | EP1556901A2 Layer arrangement of hetero-connected semiconductor layers, comprising at least one intermediate separation layer, and method for the production thereof |
| 07/27/2005 | CN1646734A Selectively aligning nanometer-scale components using AC fields |
| 07/27/2005 | CN1646224A Device based on partially oxidized porous silicon and method for the production thereof |
| 07/27/2005 | CN1644767A Carbon doped silicon sheet with internal impurity absorbing function and production thereof |
| 07/21/2005 | WO2005066672A1 Process for producing photonic crystals and controlled defects therein |
| 07/21/2005 | US20050158993 Lncuo(s,se,te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film |
| 07/21/2005 | US20050158969 Control of thermal donor formation in high resistivity CZ silicon |
| 07/21/2005 | US20050155543 Diamond single crystal substrate manufacturing method and diamond single crystal substrate |
| 07/20/2005 | EP1555337A2 Diamond single crystal substrate manufacturing method and diamond single crystal substrate |
| 07/20/2005 | CN1211397C Method for drying protein crystals |
| 07/19/2005 | USRE38760 Controlled etching of oxides via gas phase reactions |
| 07/19/2005 | US6919539 Substantially-uniform-temperature annealing |
| 07/19/2005 | US6918698 Integrated crystal mounting and alignment system for high-throughput biological crystallography |
| 07/14/2005 | US20050153550 Process for producing silicon single crystal layer and silicon single crystal layer |
| 07/14/2005 | US20050150445 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
| 07/13/2005 | EP1551768A1 Process for manufacturing a gallium rich gallium nitride film |
| 07/13/2005 | CN1639063A Process of producing multicrystalline silicon substrate and solar cell |
| 07/13/2005 | CN1638897A Method of removing casting defects |
| 07/13/2005 | CN1637614A Method and apparatus for fabricating flat panel display |
| 07/13/2005 | CN1210446C Method of eliminating compounding defect in HgCdTe material produced via melt growth process |
| 07/07/2005 | WO2005061400A1 Method of incorporating a mark in cvd diamond |
| 07/07/2005 | US20050147841 Influence of surface geometry on metal properties |