Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
02/2006
02/21/2006US7001462 Method for making an oriented optical fluoride crystal blank
02/16/2006WO2005010949A3 Solution to thermal budget
02/16/2006US20060035473 Method for stabilizing high pressure oxidation of a semiconductor device
02/16/2006US20060032432 Bulk single crystal gallium nitride and method of making same
02/16/2006DE19611043B4 Verfahren zum Herstellen eines Siliciumwafers, Verfahren zum Bilden eines Siliciumwafers und Verfahren zur Herstellung eines Halbleiterbauelements A method for producing a silicon wafer, method for forming a silicon wafer and method for manufacturing a semiconductor device
02/14/2006US6998700 Notched compound semiconductor wafer
02/14/2006US6997987 Optical lithography fluoride crystal annealing furnace
02/09/2006US20060029832 High surface quality GaN wafer and method of fabricating same
02/09/2006US20060027161 Method for heat-treating silicon wafer and silicon wafer
02/08/2006CN2756648Y Edge removing machine for wafer film oxide
02/08/2006CN1732557A Method for treating semiconductor material
02/07/2006US6994747 Method for producing optical member
02/02/2006WO2006011976A1 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
02/02/2006WO2005007937A3 Annealing single crystal chemical vapor deposition diamonds
02/02/2006WO2005007935A3 Tough diamonds and method of making thereof
02/02/2006DE202004020812U1 Process for preparation especially of a non-111 oriented sliding plane large volume low stress crystal useful as an optical element for preparation of excimer-lasers, wafers, computer chips, and integrated circuits
02/02/2006DE202004020811U1 Process for preparation of a low stress large volume crystal of defined height and diameter having a small double refraction and homogeneous refractive index useful for production of optical elements, computer chips and integrated circuits
02/02/2006DE202004020810U1 Production of low stress calcium fluoride single crystal, for optical applications, including tempering of the crystal at specified temperature for specified time giving small residual stress
02/01/2006EP1620881A1 Method for texturing surfaces of silicon wafers
02/01/2006CN1239756C Method for crystalizing amorphous silicon
01/2006
01/25/2006CN1238578C Lithium niobate crystal waveguide preparation by ion implantation and anneal
01/24/2006US6988886 Thermal treatment system for semiconductors
01/19/2006US20060014383 Method of producing semiconductor single crystal wafer and laser processing device used therefor
01/19/2006US20060012011 Mehtod for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method
01/19/2006DE19836831B4 Poliermittel zum Polieren von Halbleiterscheiben Polishing agents for polishing semiconductor wafers
01/18/2006EP1617466A1 Method for producing single crystal ingot from which semiconductor wafer is sliced
01/18/2006CN1723548A Method for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method
01/18/2006CN1723547A Method of producing semiconductor single crystal wafer and laser processing device used therefor
01/18/2006CN1237586C Semiconductor silicon wafer and mfg. method thereof
01/18/2006CN1237027C Method for joining
01/17/2006US6986925 Single crystal silicon having improved gate oxide integrity
01/12/2006DE10136022B4 Verfahren zur Vermeidung oder Beseitigung von Ausscheidungen im Abgasbereich einer Vakuumanlage Procedures to prevent or eliminate discharges in the exhaust of a vacuum system
01/11/2006EP1614775A2 Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device
01/11/2006EP1614166A2 Fluidic nanotubes and devices
01/05/2006WO2006000691A1 Hybrid epitaxy support and method for making same
01/05/2006DE19903125B4 Verfahren zur Trocknung von Kristallen von Insulin oder Insulinanaloga A process for the drying of crystals of insulin or insulin analogs
01/04/2006EP1612301A2 AlGaInN and AlN substrates and method for cleaning them
01/04/2006CN1235273C Oxide film mfg. device
12/2005
12/29/2005WO2005124843A1 Silicon wafer manufacturing method and silicon wafer
12/29/2005US20050287770 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
12/29/2005US20050287725 Plasma processing method, plasma processing apparatus, and computer recording medium
12/29/2005US20050287292 Optical element fabrication method, optical element, exposure apparatus, device fabrication method
12/29/2005US20050284359 Charge restrained wafer of piezoelectric oxide single crystal, and charge restraining method and apparatus for piezoelectric oxide single crystal
12/28/2005CN1714459A Method for producing a semiconductor element
12/28/2005CN1714429A Method for preparing film structure comprising ferroelectric single crystal layer
12/28/2005CN1714428A Method for preparation of ferroelectric single crystal film structure using deposition method
12/28/2005CN1712577A Magnetic modified nanometer zinc oxide whiskers and production thereof
12/22/2005US20050279283 Method for stabilizing high pressure oxidation of a semiconductor device
12/21/2005EP1608010A2 Method of forming connection hole
12/21/2005EP1606103A2 Rapid generation of nanoparticles from bulk solids at room temperature
12/21/2005CN1711211A Dispersion of nanowires of semiconductor material
12/15/2005WO2005119725A1 New material for vapor sources of alkali and alkaline earth metals and a method of its production
12/08/2005US20050269671 Support for hybrid epitaxy and method of fabrication
12/08/2005DE10127733B4 Schrauben- oder Spiralfederelemente aus kristallinem, insbesondere einkristallinem Silicium Helical or spiral spring elements of crystalline, particularly single-crystal silicon
12/07/2005EP1603154A2 Apparatus and method for surface finishing a silicon film
12/07/2005CN1230577C Post-treating method for rare earth barium-copper superconductive blocks under high pressure oxygen condition
12/06/2005US6972051 Bulk single crystal gallium nitride and method of making same
12/01/2005WO2005114256A1 ZnO SINGLE CRYSTAL AS SUPER HIGH SPEED SCINTILLATOR AND METHOD FOR PREPARATION THEREOF
12/01/2005US20050266626 Method of fabricating heteroepitaxial microstructures
12/01/2005DE102005028167A1 Process and assembly to treat semiconductor wafer in liquid etching bath with inner wall and outer wall
12/01/2005DE102004054565A1 Production of a semiconductor wafer comprises not turning the wafer during inspection of the front and rear sides
11/2005
11/30/2005EP1600531A1 Process for producing lithium tantalate crystal
11/30/2005EP1599897A2 Apparatus and method for reducing impurities in a semiconductor material
11/24/2005WO2005112067A1 New material for vapor sources of alkali and alkaline earth metals and a method of its production
11/24/2005DE102005028166A1 Treating a semiconductor wafer comprises using a system held by rollers which hold the wafer in a region of their edges so that an etching medium flows against the edge of the wafer
11/23/2005EP1597416A1 Annealing method for halide crystal
11/17/2005DE10393798T5 Ausheilprozess und Vorrichtung eines Halbleiter-Wafers Anneal process and apparatus of a semiconductor wafer
11/16/2005EP1595968A1 Heat Treatment Process for Single Crystal or Directionally Solidified Components
11/16/2005EP1594426A1 Marking of diamond
11/16/2005CN1697894A Diamond composite substrate and process for producing the same
11/16/2005CN1697130A Silicon wafer and method for manufacturing the same
11/15/2005US6965149 Epitaxial semiconductor wafer and a manufacturing method thereof
11/10/2005WO2005106062A1 Heat treatment method for monocrystalline or directionally solidified structural components
11/10/2005WO2005004197A3 Fluidic nanotubes and devices
11/10/2005US20050250349 High-resistance silicon wafer and process for producing the same
11/10/2005US20050247259 Silicon wafer and method for manufacturing the same
11/10/2005DE102004019690A1 B-terminated surface fabrication on perovskite single crystals contacts crystal with fluid and irradiates with light of specified electron transition energy
11/09/2005CN1695253A Semi-insulating silicon carbide without vanadium domination
11/09/2005CN1695225A Method of removing an amorphous oxide from a monocrystalline surface
11/03/2005WO2005103343A1 Electrostatic charge controlling process for piezoelectric oxide single crystal and apparatus for electrostatic charge controlling process
11/03/2005DE202005013898U1 Calcium difluoride single crystal with small scattering (sic), refractive index difference and number of small angle grain boundaries useful in the production of computer chips and electronic circuits
11/02/2005CN1692482A Method for manufacturing silicon wafer
11/02/2005CN1691281A Method for manufacturing substrate wafer used for semiconductor component with few defect, component made by the method and application thereof
11/01/2005US6960482 Method of fabricating nitride semiconductor and method of fabricating semiconductor device
10/2005
10/27/2005US20050239270 Method for producing a semiconductor element
10/27/2005US20050238905 Vacancy-dominated, defect-free silicon
10/26/2005CN1689148A Annealed wafer and annealed wafer manufacturing method
10/26/2005CN1688754A Coloured diamond
10/25/2005US6958093 Free-standing (Al, Ga, In)N and parting method for forming same
10/25/2005US6958092 Epitaxial silicon wafer with intrinsic gettering and a method for the preparation thereof
10/20/2005US20050233438 Flat macroporous support material with pores extending the length of surface; silicon dioxide walls; DNA, proteins, oligonucleotide probes captured by covalent binding
10/20/2005US20050233171 Epitaxial oxide films via nitride conversion
10/20/2005US20050232320 Method of manufacturing optical crystal element of laser
10/20/2005US20050229842 Manufacturing method of silicon wafer
10/18/2005US6955996 Method for stabilizing high pressure oxidation of a semiconductor device
10/18/2005US6955718 Process for preparing a stabilized ideal oxygen precipitating silicon wafer
10/13/2005US20050225215 Crystal base plate and pressing device
10/12/2005CN1681976A 单晶金刚石 Single crystal diamond
10/12/2005CN1681143A Rapid circulating crystallizing device and method for preparing nanometer crystal material
10/12/2005CN1222643C Heat treatment of ZnSe crystal substrates, heat treated substrates and optical emitter
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