| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 06/21/2006 | EP1672102A1 Ferroelectric thin-film production method, voltage-application etching apparatus, ferroelectric crystal thin-film substrate, and ferroelectric crystal wafer |
| 06/21/2006 | EP1671361A2 Method of producing a plate-shaped structure, in particular, from silicon, use of said method and plate-shaped structure thus produced, in particular from silicon |
| 06/21/2006 | EP1670975A1 Spinel boules, wafers, and methods for fabricating same |
| 06/21/2006 | CN2789986Y Polygonal heat bonded composite laser dielectric |
| 06/21/2006 | CN1260411C Method for modifying planar mono-crystal silicon surface |
| 06/20/2006 | US7063740 Process for strengthen grain boundaries of an article made from a Ni based superalloy |
| 06/14/2006 | EP1668356A1 Method for controlling the treatment of a crystal by means of a liquid |
| 06/14/2006 | CN1259469C Process for producing periodicity field reverse of Gd2 (MoO4)3 crystal |
| 06/13/2006 | US7060195 Method for forming a liquid crystal display panel |
| 06/08/2006 | WO2005087983A3 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys |
| 06/07/2006 | EP1665350A1 Method for treating heteroepitaxially grown semi-conductor layers on semi-conductor substrates, semi-conductor substrate comprising a treated semi-conductor layer and semi-conductor component made of said type of semi-conductor substrate |
| 06/07/2006 | EP1664396A1 A method of fabricating an epitaxially grown layer |
| 06/07/2006 | EP1664394A2 Ultrahard diamonds and method of making thereof |
| 06/07/2006 | EP1664373A2 Annealing single crystal chemical vapor deposition diamonds |
| 06/07/2006 | EP1663866A2 Tough diamonds and method of making thereof |
| 06/07/2006 | CN1782141A Equipment for pulling crystal using direct pulling |
| 06/06/2006 | US7056389 Method and device for thermal treatment of substrates |
| 06/01/2006 | US20060113559 Notched compound semiconductor wafer |
| 06/01/2006 | US20060113558 Notched compound semiconductor wafer |
| 05/31/2006 | EP1660703A1 Method of manufacturing diamond substrates |
| 05/31/2006 | EP1660702A1 A method of fabricating an epitaxially grown layer |
| 05/31/2006 | CN1779001A Method and apparatus for polishing large-scale diamond membrane |
| 05/31/2006 | CN1258007C Method for heat treatment of monomorph of fluoride, and method for mfg. same |
| 05/31/2006 | CN1258003C Cathode reduction process for treating surface of porous silicon |
| 05/30/2006 | US7054532 Three-dimensional photonic crystal waveguide structure and method |
| 05/30/2006 | CA2423146C A method of welding single crystals |
| 05/25/2006 | US20060108321 Etching apparatus |
| 05/25/2006 | US20060107890 One hundred millimeter single crystal silicon carbide wafer |
| 05/25/2006 | US20060107888 Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals |
| 05/24/2006 | EP1658519A2 Solution to thermal budget |
| 05/24/2006 | EP1015936B1 Method of poling of optical crystals |
| 05/24/2006 | DE102004054566A1 Verfahren und Vorrichtung zum Einebnen einer Halbleiterscheibe sowie Halbleiterscheibe mit verbesserter Ebenheit Method and apparatus for planarizing a semiconductor wafer and semiconductor wafer with improved flatness |
| 05/23/2006 | US7048967 Organic film vapor deposition method and a scintillator panel |
| 05/23/2006 | US7048796 Silicon single crystal wafer fabricating method and silicon single crystal wafer |
| 05/18/2006 | US20060102924 Diboride single crystal substrate, semiconductor device using this and its manufacturing method |
| 05/18/2006 | DE112004001032T5 Verfahren zum Verbinden von Keramik: Reaktions-Diffusionsbinden A method of joining ceramics: reaction diffusion bonding |
| 05/17/2006 | EP1656473A2 Metal nano-objects, formed on semiconductor surfaces, and methods for making said nano-objects |
| 05/11/2006 | US20060097353 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 05/11/2006 | US20060096521 Method for reducing defect concentration in crystals |
| 05/10/2006 | EP1654405A1 Device and method for treating a crystal by applying microdrops thereto |
| 05/10/2006 | CN1769549A Monocrystalline silicon buffing sheet heat treatment process |
| 05/04/2006 | WO2006046601A1 Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution |
| 05/04/2006 | US20060090691 Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film |
| 05/03/2006 | EP1478482B1 Method of removing casting defects |
| 05/03/2006 | CN1254855C Quick annealing and silicon wafer produced by same |
| 05/03/2006 | CN1254305C High temp/high pressure colour change of diamond |
| 04/26/2006 | EP1650330A1 Method of producing silicon wafer and silicon wafer |
| 04/26/2006 | CN2775932Y Power device for non-linear crystal polarization |
| 04/26/2006 | CN1765006A Apparatus and method for reducing impurities in a semiconductor material |
| 04/26/2006 | CN1763913A Substrate processing apparatus and substrate processing method |
| 04/26/2006 | CN1253610C Low defect density self-interstitial atom controlled silicon |
| 04/25/2006 | US7033905 Recycling of a wafer comprising a buffer layer after having separated a thin layer therefrom by mechanical means |
| 04/25/2006 | US7033647 catalytically depositing gaseous carbon on a catalyst layer using an ion beam and sub-beams to modify nanotube properties; a multi-beam ion optical system controlls sub-beams |
| 04/25/2006 | US7033563 Method for reducing oxygen component and carbon component in fluoride |
| 04/20/2006 | DE102004050117A1 Determination of metallic impurities such as copper in semiconductor wafers with a surface getter layer, involves providing the surface with a negative charge, heating the sample and analysing by TXRF |
| 04/19/2006 | CN1252328C Method of making nanotube-based material with enhanced electron field emission properties |
| 04/19/2006 | CN1252309C Heat treatment method for improving high-niobium reinforcing type monocrystal high temp alloy use property |
| 04/18/2006 | US7030000 Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element |
| 04/18/2006 | US7029528 Method for flattening surface of oxide crystal to ultra high degree |
| 04/13/2006 | US20060076559 Method of fabricating an epitaxially grown layer |
| 04/13/2006 | US20060075957 Annealed wafer and anneald wafer manufacturing method |
| 04/13/2006 | DE10125929B4 Verfahren zur Herstellung eines Nb3Al-supraleitenden Mehrfaserdrahtes A method for producing a Nb3Al superconducting multifilamentary wire |
| 04/12/2006 | EP1645664A1 The technique of production of fancy red diamonds |
| 04/12/2006 | EP1185548B1 Method for drying protein crystals |
| 04/05/2006 | EP1641965A1 Single-crystal-like materials |
| 04/05/2006 | EP1641964A1 Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
| 04/05/2006 | EP1397835B1 Method of controlling the crystal orientation of a composite structure |
| 04/04/2006 | US7022604 Method of forming spatial regions of a second material in a first material |
| 04/04/2006 | US7022545 Production method of SiC monitor wafer |
| 03/30/2006 | US20060068597 Method for texturing surfaces of silicon wafers |
| 03/30/2006 | US20060068096 Method of synthesising carbon nano tubes |
| 03/30/2006 | DE10043587B4 Verfahren zur Herstellung eines Substrats, nach diesem Verfahren hergestelltes Substrat A method for producing a substrate, prepared by this process substrate |
| 03/29/2006 | EP1348048B1 Process for preparing single crystal silicon having improved gate oxide integrity |
| 03/29/2006 | CN1754014A Process for producing lithium tantalate crystal |
| 03/29/2006 | CN1754012A Annealing method for halide crystal |
| 03/29/2006 | CN1248291C Method of doping silicon with phosphorus and growing oxide on silicon in presence of steam |
| 03/28/2006 | US7018467 Three-dimensional complete bandgap photonic crystal formed by crystal modification |
| 03/23/2006 | US20060060883 Notched compound semiconductor wafer |
| 03/23/2006 | US20060060560 Process for forming pattern and method for producing liquid crystal display apparatus |
| 03/23/2006 | DE102005033951A1 Zusammensetzungen und Verfahren zum chemisch-mechanischen Polieren von Siliziumdioxid und Siliziumnitrid Compositions and methods for chemical-mechanical polishing of silicon dioxide and silicon nitride, |
| 03/22/2006 | EP1405110A4 Preferred crystal orientation optical elements from cubic materials |
| 03/22/2006 | EP1242836B1 CALCIUM FLUORIDE (CaF2) STRESS PLATE AND METHOD OF MAKING THE SAME |
| 03/22/2006 | CN1246509C Method of laser crystallization |
| 03/21/2006 | US7015628 Piezoelectric single crystal device and fabrication method thereof |
| 03/21/2006 | US7014703 Method for annealing group IIA metal fluoride crystals |
| 03/16/2006 | US20060057383 Telescoped multiwall nanotube and manufacture thereof |
| 03/16/2006 | DE102005046726A1 Unpolished semiconductor wafer manufacture, involves cutting off wafer from crystal, rounding off edge of wafer, grounding upper surface of one side of wafer, treating wafer with corrosive medium and cleaning wafer |
| 03/15/2006 | CN1748296A Plasma processing method, semiconductor substrate and plasma processing apparatus |
| 03/14/2006 | US7012318 Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 03/14/2006 | US7011887 IT-cut quartz crystal unit |
| 03/09/2006 | DE102005039116A1 Verfahren zur Erzeugung eines Siliziumwafers A method for producing a silicon wafer |
| 03/08/2006 | EP1632590A2 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 03/08/2006 | EP1631703A1 Electromagnetic rotation of platter |
| 03/08/2006 | CN1743514A Annealing treatment method of crystal in neutral and inert atmosphere |
| 03/07/2006 | US7008886 Process for treatment of the surface of a semiconducting material, particularly using hydrogen, and surface obtained using this process |
| 03/01/2006 | EP1097107B1 A method of altering the colour of a material |
| 03/01/2006 | CN1243606C High temp/high pressure colour change of diamond |
| 02/23/2006 | DE102005038639A1 Measurement, orientation and fixation of single crystal(s) for semiconductor industry by orienting single crystal based on angles of lattice plane normal relative to axis of revolving table, before fixing crystal and fastening on support |
| 02/22/2006 | CN1243137C Annealing process of Yb: YAG crystal |
| 02/22/2006 | CN1243134C Anode oxidizing process for treating surface of porous silicon |