| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 10/18/2006 | CN1280455C Low defect density silicon |
| 10/18/2006 | CN1280454C Low defect density, ideal oxygen precipitating silicon |
| 10/11/2006 | CN1846017A Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
| 10/11/2006 | CN1844494A Method for preparing composite Ti:Al2O3 laser rod |
| 10/11/2006 | CN1843638A Method for preparing phospho silane-rare earth nanometer membrane on single crystal silicon sheet surface |
| 10/10/2006 | US7118780 Heat treatment method |
| 10/05/2006 | US20060219655 Ferroelectric thin-film production method, voltage-application etching apparatus, ferroelectric crystal thin-film substrate, and ferroelectric crystal wafer |
| 10/04/2006 | EP1708254A1 Process for producing monocrystal thin film and monocrystal thin film device |
| 10/04/2006 | EP1706523A1 Treatment of crystals in order to avoid light-induced modifications of the refraction index |
| 10/04/2006 | EP1272265B1 High temperature/high pressure colour change of diamond |
| 10/04/2006 | EP1272264B1 High temperature/high pressure colour change of diamond |
| 10/04/2006 | CN1840749A Silicon wafer and its heat treatment method |
| 10/04/2006 | CN1278396C 激光退火装置及其应用 Laser annealing device and its applications |
| 10/03/2006 | US7115241 Ultrahard diamonds and method of making thereof |
| 09/28/2006 | US20060213430 Seeded single crystal silicon carbide growth and resulting crystals |
| 09/28/2006 | DE102005013831A1 Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe Silicon wafer and method for heat treating a silicon wafer |
| 09/27/2006 | EP0898800B1 ROOM TEMPERATURE STABLE COLOR CENTER LASER, LiF:F2+** MATERIAL, AND METHOD OF LASING |
| 09/26/2006 | US7112458 Method of forming a liquid crystal display |
| 09/21/2006 | US20060207713 Forming a SiO2 layer on a silicon substrate; applying a heat-curable conductive adhesive layer; laminating the single crystal plate on the adhesive; heat curing; and polishing, polarizing and etching the crystal plate; fabrication of many electric or electronic devices including a microactuator |
| 09/20/2006 | EP1181401B1 Semi-insulating silicon carbide without vanadium domination |
| 09/14/2006 | US20060204230 Annealing process and device of semiconductor wafer |
| 09/14/2006 | DE102005010654A1 Production of high-homogeneous, tension-poor and large volume calcium fluoride single crystal e.g. for production of lenses, prisms and optical components for deep ultraviolet photolithography, comprises cooling crystal after its breeding |
| 09/14/2006 | DE10019601B4 Layer composite material for sliding elements and for plain bearings, particularly crankshaft bearing, camshaft bearings or connecting rod bearings, comprises primary layer made from copper alloy or aluminum alloy |
| 09/13/2006 | EP1700936A1 Method to grow homogene and low-strained monocrystals |
| 09/13/2006 | EP1497030B1 Device based on partially oxidized porous silicon and method for the production thereof |
| 09/13/2006 | CN1275290C Method and device for doping diffusion and oxidation of silicon wafers under reduced pressure |
| 09/13/2006 | CN1274887C Method for preparing tungstate single crystal |
| 09/12/2006 | US7105049 Method of manufacturing single crystal calcium fluoride |
| 09/07/2006 | US20060197035 Organic film vapor deposition method and a scintillator panel |
| 09/07/2006 | DE102004063857A1 Wafer cutting process comprises treating a workpiece surface on its stretching table |
| 09/06/2006 | EP0993370B1 Eutectic bonding of single crystal components |
| 09/06/2006 | CN1274083C Etching method, etched product, piezoelectric vibration device and making method thereof |
| 09/06/2006 | CN1273657C Exhaust pressure control method for rapid heat treatment system |
| 09/06/2006 | CN1273656C Quick annealing method |
| 09/06/2006 | CN1273654C Growth process for monocrystal of gallium nitride, substrates of gallium nitride monocrystal and manufacture thereof |
| 09/05/2006 | US7101725 Solution to thermal budget |
| 08/31/2006 | WO2006090034A1 Method for making a dismountable substrate |
| 08/31/2006 | US20060194416 Method for producing single crystal ingot from which semiconductor wafer is sliced |
| 08/31/2006 | US20060191467 Group iii nitride based semiconductor substrate and process for manufacture thereof |
| 08/30/2006 | CN1826434A Method of fabricating an epitaxially grown layer |
| 08/30/2006 | CN1826433A Method of fabricating an epitaxially grown layer |
| 08/30/2006 | CN1825549A Wafer with semiconductor layer and insolator layer below it, and method therefore |
| 08/30/2006 | CN1272639C Scintillator panel |
| 08/29/2006 | US7097920 Group III nitride based semiconductor substrate and process for manufacture thereof |
| 08/24/2006 | US20060185583 Single crystal diamond grown by microwave plasma chemical vapor deposition and annealed at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa. |
| 08/23/2006 | CN1823008A Tough diamonds and method of making thereof |
| 08/22/2006 | US7094668 Annealing process and device of semiconductor wafer |
| 08/17/2006 | US20060183329 Apparatus and method for reducing impurities in a semiconductor material |
| 08/17/2006 | US20060180569 Method of manufacturing step contact window of flat display panel |
| 08/16/2006 | EP1689553A2 Methods for repair of single crystal superalloys by laser welding and products thereof |
| 08/16/2006 | CN1818155A Method for fabricating low-defect-density changed orientation Si |
| 08/16/2006 | CN1818154A Quasi-hydrophobic si-si wafer bonding using hydrophilic si surfaces and dissolution of interfacial bonding oxide |
| 08/16/2006 | CN1270359C Method for low temperature oxidation of silicon and used apparatus |
| 08/16/2006 | CN1270000C Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation |
| 08/16/2006 | CN1269999C Process for mixing oxygen into gallium nitride crystal and oxygen-mixed n-type gallium nitride single crystal plate |
| 08/10/2006 | WO2006082469A1 Method for applying a high temperature treatment to a semimiconductor wafer |
| 08/10/2006 | WO2006082468A1 Method for high-temperature annealing a multilayer wafer |
| 08/10/2006 | US20060175286 Making a thin film transistor panel of liquid crystal display by wet etching a multilayer metallic structure including a high melting metal film and an Al or alloy film using side etching technique with a photoresist mask; hot water washing to form a protective oxide film and dry etching using the mask |
| 08/10/2006 | US20060174820 Method for producincg silicon wafer and silicon wafer |
| 08/10/2006 | US20060174815 Process for manufacturing a gallium rich gallium nitride film |
| 08/09/2006 | EP1688519A2 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
| 08/09/2006 | EP1356139B1 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core |
| 08/09/2006 | CN1269186C Carbon doped silicon sheet with internal impurity absorbing function and production thereof |
| 08/09/2006 | CN1268953C Optical device and producing method thereof |
| 08/03/2006 | WO2006080264A1 Method of selective etching and silicon single crystal substrate |
| 08/03/2006 | US20060169196 Method for producing lithium tantalate crystal |
| 08/02/2006 | CN1811008A Epitaxial process of nanometer crystal film of ferroelectric lead zirconate-titanate (PZT) material |
| 07/27/2006 | US20060163199 Dispersion of nanowires of semiconductor material |
| 07/27/2006 | US20060162849 Method of joining ceramics: reaction diffusion-bonding |
| 07/27/2006 | DE19609107B4 Verfahren zum Herstellen von Siliziumwafern A method for producing silicon wafers |
| 07/26/2006 | EP1683897A1 Wafer with semiconductor layer and insolator layer below it, and method therefore |
| 07/26/2006 | EP1683896A2 Process for purifying crystal material and for producing crystals, apparatus therefor and application of crystals thus obtained |
| 07/20/2006 | WO2005007936A3 Ultrahard diamonds and method of making thereof |
| 07/20/2006 | DE102005000865A1 Connecting of two components comprises bringing to reaction component parts of solution with aluminum content between joined together surfaces |
| 07/19/2006 | CN1804153A Process for treating a semiconductor wafer with a gaseous medium, and semiconductor wafer treated by this process |
| 07/18/2006 | US7077900 Method for fabricating optical fiber preform using extrusion die |
| 07/13/2006 | US20060150894 Method for producing a wafer |
| 07/13/2006 | DE102005025933B3 Doping mixture for preparing and doping semiconductor surfaces, comprises a p- or n-dopant, for doping the semiconductor surfaces, water and mixture of two or more surfactants, where one of the surfactant is a non-ionic surfactant |
| 07/13/2006 | DE102004062356A1 Halbleiterscheibe mit einer Halbleiterschicht und einer darunter liegenden elektrisch isolierenden Schicht sowie Verfahren zu deren Herstellung Semiconductor wafer with a semiconductor layer and an underlying electrically insulating layer and to processes for their preparation |
| 07/12/2006 | EP1679392A1 Process for producing single crystal |
| 07/12/2006 | EP1470441B1 Photonic crystals having a skeleton structure |
| 07/12/2006 | CN1802734A Shaped nanocrystal particles and methods for working the same |
| 07/12/2006 | CN1802579A Three-dimensional photonic crystal waveguide structure |
| 07/11/2006 | US7074498 Influence of surface geometry on metal properties |
| 07/11/2006 | US7074342 Method of manufacturing optical crystal element of laser |
| 07/11/2006 | US7074271 Method of identifying defect distribution in silicon single crystal ingot |
| 07/06/2006 | WO2006071326A1 Process for producing silicon carbide crystals having increased minority carrier lifetimes |
| 07/06/2006 | WO2006070855A1 Magnesium oxide single crystal having controlled crystallinity and method for preparation thereof, and substrate using said single crystal |
| 07/06/2006 | WO2006070480A1 Silicon carbide single crystal, silicon carbide single crystal wafer, and process for producing the same |
| 07/06/2006 | US20060144322 Ultrahard diamonds and method of making thereof |
| 07/06/2006 | DE102004062355A1 Verfahren zum Behandeln einer Halbleiterscheibe mit einem gasförmigen Medium sowie damit behandelte Halbleiterscheibe A method for treating a semiconductor wafer with a gaseous medium, and the semiconductor wafer thus treated |
| 07/05/2006 | EP1677344A1 Process for producing high resistance silicon wafer, and process for producing epitaxial wafer and soi wafer |
| 07/05/2006 | CN1796621A Rapid thermal annealing for silicon wafers and silicon wafers fabricated thereby |
| 07/05/2006 | CN1262693C Parameter monitoring system and method for wafer processing capacity per hour of wafer processing furnace |
| 07/04/2006 | US7070702 selectively etching substrate, for example lithium niobate, by applying etchant such as hydrofluoric acid and nitric acid at surface of substrate and illuminating an area of the surface with light from a light source, whereby etching is partially inhibited in illuminated area of substrate |
| 06/29/2006 | US20060137601 Method of synthesis of 3d silicon colloidal photonic crystals by micromolding in inverse silica opal (miso) |
| 06/28/2006 | CN1795542A Method for producing single crystal ingot from which semiconductor wafer is sliced |
| 06/22/2006 | WO2006064882A1 Process for producing boric acid compound crystal and boric acid compound crystal produced by said process |
| 06/22/2006 | WO2006064610A1 Process for producing single crystal and process for producing annealed wafer |
| 06/22/2006 | US20060130738 Method for measuring point defect distribution of silicon single crystal ingot |