| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 01/30/2007 | US7169242 Method of removing casting defects |
| 01/30/2007 | US7169227 Method for making free-standing AIGaN wafer, wafer produced thereby, and associated methods and devices using the wafer |
| 01/25/2007 | WO2007010890A1 HEAT TREATMENT METHOD FOR ZnTe SINGLE CRYSTAL SUBSTRATE AND ZnTe SINGLE CRYSTAL SUBSTRATE |
| 01/25/2007 | US20070020933 Method of cleaning treatment and method for manufacturing semiconductor device |
| 01/24/2007 | CN1901172A Semiconductor wafer and process for producing a semiconductor wafer |
| 01/24/2007 | CN1901152A Etching method and apparatus |
| 01/24/2007 | CN1296526C Annealed low defect density single crystal silicon |
| 01/24/2007 | CN1296525C Process for preparing defect free silicon crystal which allows for variability in process conditions |
| 01/18/2007 | WO2006125069A3 A high resistivity silicon structure and a process for the preparation thereof |
| 01/18/2007 | WO2005108635A3 Single crystal shape memory alloy devices and methods |
| 01/18/2007 | US20070013859 Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same |
| 01/18/2007 | US20070012657 Plasma spraying liquid crystalline polymer on surface of component by feeding liquid crystalline polymer powder into plasma flame to form molten or heat-softened particles, where liquid crystalline polymer particles form plasma sprayed coating on outermost surface of component; minimizes contamination |
| 01/17/2007 | EP1437328B1 Method for creating silicon dioxide film |
| 01/17/2007 | CN1896344A Method for doping oxygen to gallium nitride crystal and oxygen-doped n-type gallium nitride single crystal substrate |
| 01/17/2007 | CN1295745C Method and device for thermally treating substrates |
| 01/17/2007 | CN1295170C Method for inducing functional crystalline material from glass and crystalline using femtosecond laser |
| 01/16/2007 | US7163638 Forming an insulating film on a substrate material, forming a contact hole in the insulating film, and coating a region where a transparent conductive film is to be formed with a liquid containing a precursor of the transparent conductive film liquid coats any unnecessary insulating film formed, annealin |
| 01/11/2007 | WO2006041660A3 100 mm silicon carbide wafer with low micropipe density |
| 01/11/2007 | US20070006797 Lithium tantalate substrate and method for producing same |
| 01/10/2007 | EP1741809A1 Electrostatic charge controlling process for piezoelectric oxide single crystal and apparatus for electrostatic charge controlling process |
| 01/10/2007 | EP1740735A1 Heat treatment method for monocrystalline or directionally solidified structural components |
| 01/10/2007 | EP1606103A4 Rapid generation of nanoparticles from bulk solids at room temperature |
| 01/10/2007 | CN1894611A Method for producing photon crystal and controllable defect therein |
| 01/10/2007 | CN1294630C Apparatus and method for heat treating semiconductor |
| 01/10/2007 | CN1294629C Silicon semiconductor crystal wafers and manufacturing method for multiple semiconductor crystal wafers |
| 01/04/2007 | WO2007000704A1 Apparatus and method for maintaining a near-atmospheric pressure inside a process chamber |
| 01/04/2007 | WO2007000271A1 Reinforced micromechanical part |
| 01/04/2007 | DE102005030851A1 Device for heat-treating III-V semiconductor wafers comprises a wafer carrier with dimensions such that a cover is formed close to the wafer surface |
| 01/03/2007 | EP1739213A1 Apparatus and method for annealing of III-V wafers and annealed III-V semiconductor single crystal wafers |
| 01/02/2007 | US7157354 Method for gettering transition metal impurities in silicon crystal |
| 01/02/2007 | US7157067 Crystallization of a single crystal diamond grown by microwave plasma chemical vapor deposition; heat treatment; noncracking, nonfracturing; hardness |
| 12/28/2006 | WO2006137192A1 Method of surface reconstruction for silicon carbide substrate |
| 12/28/2006 | US20060292728 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same |
| 12/28/2006 | US20060291834 Method and apparatus for thermally treating substrates |
| 12/28/2006 | US20060289383 dielectrics, semiconductors; liquid crystal displays; photoresists |
| 12/27/2006 | EP1736574A1 Nitride crystal, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same |
| 12/27/2006 | CN1884639A Heat treatment method after silicon carbide monocrystal growth |
| 12/27/2006 | CN1884638A Inner gettering process of heavily boron-doped Czochralski silicon wafer based on quick heat process |
| 12/26/2006 | US7153785 Method of producing annealed wafer and annealed wafer |
| 12/26/2006 | US7153703 Synthesis of stable colloidal nanocrystals using organic dendrons |
| 12/21/2006 | WO2006135688A2 Polar surface preparation of nitride substrates |
| 12/21/2006 | US20060283833 Wiring for display device and thin film transistor array panel with the same, and manufacturing method thereof |
| 12/21/2006 | US20060283375 Lithium tantalate substrate and method of manufacturing same |
| 12/21/2006 | US20060283372 Lithium tantalate substrate and method of manufacturing same |
| 12/20/2006 | CN1883031A Method of producing a plate-shaped structure, in particular, from silicon, use of said method and plate-shaped structure thus produced, in particular from silicon |
| 12/20/2006 | CN1881547A Silicon wafer for igbt and method for producing same |
| 12/20/2006 | CN1880522A Polarization method for lithium niobate |
| 12/19/2006 | US7151059 MOS transistor and method of manufacture |
| 12/19/2006 | US7150911 Electrical insulating vapor grown carbon fiber and method for producing the same, and use thereof |
| 12/19/2006 | US7150788 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate |
| 12/14/2006 | WO2006051186A3 Particle network and method for realizing such a network |
| 12/14/2006 | US20060281317 A first conductive layer of a high-melting point metal is in contact with an insulating layer by droplet discharge; a second conductive layer of silver, gold, copper, or indium tin oxide in contact with the first conductive layer,has improved adhesiveness with the insulating layer; antipeeling agents |
| 12/13/2006 | EP1357582B1 Heat-treating device |
| 12/12/2006 | US7147711 Method of producing silicon wafer and silicon wafer |
| 12/12/2006 | US7147710 Method of manufacturing epitaxial silicon wafer |
| 12/12/2006 | US7147709 Non-contact etch annealing of strained layers |
| 12/06/2006 | CN1288713C Heating system and method of reactor for heating atmosphere |
| 12/05/2006 | US7145714 Segmented electrodes for poling of ferroelectric crystal materials |
| 11/30/2006 | DE102005024073A1 Halbleiter-Schichtstruktur und Verfahren zur Herstellung einer Halbleiter-Schichtstruktur Semiconductor layer structure and process for producing a semiconductor layer structure |
| 11/30/2006 | DE10054038B4 Verfahren zum Trennen eines plattenförmigen Körpers, insbesondere eines Halbleiterwafers, in Einzelstücke A method of separating a plate-shaped body, in particular a semiconductor wafer, into individual pieces |
| 11/29/2006 | CN1871698A Process for producing high resistance silicon wafer, and process for producing epitaxial wafer and soi wafer |
| 11/29/2006 | CN1870223A Crystal growing method for single-crystal gan, and single-crystal gan substrate and manufacturing method thereof |
| 11/29/2006 | CN1870217A Method for controlling and removing fog-shaped micro-defect of silicon gas-phase epitaxial layer |
| 11/28/2006 | US7141113 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer |
| 11/26/2006 | CA2851894A1 Thermally stable ultra-hard material compact constructions |
| 11/23/2006 | WO2006125069A2 A high resistivity silicon structure and a process for the preparation thereof |
| 11/23/2006 | US20060260535 Single crystal calcium fluoride for photolithography |
| 11/22/2006 | EP1724378A2 Epitaxial substrate, semiconductor element, manufacturing method for epitaxial substrate and method for unevenly distributing dislocations in group III nitride crystal |
| 11/22/2006 | EP1723455A1 Process for producing photonic crystals and controlled defects therein |
| 11/22/2006 | EP1723086A1 Method of incoporating a mark in cvd diamond |
| 11/22/2006 | CN1868030A Method of fabrication and device comprising elongated nanosize elements |
| 11/22/2006 | CN1865542A Surface treatment method for n-type single crystal silicon wafer |
| 11/22/2006 | CN1865541A Surface treatment method for p-type single crystal silicon wafer |
| 11/21/2006 | US7137865 Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation |
| 11/16/2006 | DE102005021642A1 Process for preparation of single crystal profiled body useful in production of turbine blades gives high quality turbine blades without use of expensive laser beams for profiling turbine blade cooling channels |
| 11/14/2006 | US7135351 Method for controlling of thermal donor formation in high resistivity CZ silicon |
| 11/14/2006 | US7135057 Gas storage medium and methods |
| 11/09/2006 | WO2006119359A2 Method of producing nanocrystalline monolithic articles |
| 11/09/2006 | US20060252164 Process for producing gan substrate |
| 11/09/2006 | US20060250559 Glass product for use in ultra-thin glass display applications |
| 11/09/2006 | US20060249796 Influence of surface geometry on metal properties |
| 11/09/2006 | US20060249694 Marking of diamond |
| 11/08/2006 | EP1718956A1 PROCESS FOR PREPARING CAF sb 2 /sb LENS BLANKS ESPECIALLY FOR 193 NM AND 157 NM LITHOGRAPHY WITH MINIMIZED DEFECTS |
| 11/02/2006 | EP1717872A2 Method of producing nitride layer and method of fabricating vertical semiconductor light emitting device |
| 11/02/2006 | EP1717286A1 Method of surface treatment of group III nitride crystal film, group III nitride crystal substrate, group III nitride crystal substrate with epitaxial layer, and semiconductor device |
| 11/02/2006 | DE10337757B4 Halbleiterwafer mit asymmetrischem Kantenprofil und Herstellungsverfahren hierfür A semiconductor wafer with an asymmetric edge profile and manufacturing method thereof |
| 11/01/2006 | CN1856599A Lithium tantalate substrate and method for producing same |
| 11/01/2006 | CN1856598A Lithium tantalate substrate and process for producing the same |
| 11/01/2006 | CN1856597A Lithium tantalate substrate and method for producing same |
| 11/01/2006 | CN1854353A Low defect density epitaxial wafer and a process for the preparation thereof |
| 10/31/2006 | US7129123 SOI wafer and a method for producing an SOI wafer |
| 10/26/2006 | WO2006111533A1 A method of bonding two wafers made out of materials selected from semiconductor materials |
| 10/25/2006 | EP1715086A1 Method for reducing defect concentrations in crystals |
| 10/25/2006 | EP1505375A4 Method for producing the sensing element of an ultra-violet indicator |
| 10/25/2006 | CN1853006A Method of forming carbon nanotubes |
| 10/25/2006 | CN1853001A Annealing single crystal chemical vapor depositon diamonds |
| 10/19/2006 | WO2006064882A9 Process for producing boric acid compound crystal and boric acid compound crystal produced by said process |
| 10/19/2006 | US20060234032 Deposition of layers on substrates |
| 10/18/2006 | EP1713118A1 Method for manufacturing semiconductor wafer and system for determining cut position of semiconductor ingot |
| 10/18/2006 | CN1848005A Gas path controlling method for chip etching equipment |