Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
06/2007
06/12/2007US7229926 Method of manufacturing nitride substrate for semiconductors, and nitride semiconductor substrate
06/12/2007US7229693 Low defect density, ideal oxygen precipitating silicon
06/12/2007US7229496 Process for producing silicon single crystal layer and silicon single crystal layer
06/06/2007CN1977064A Heat treatment method for monocrystalline or directionally solidified structural components
06/06/2007CN1975992A Semiconductor device fabrication method and electronic device fabrication method
06/06/2007CN1320176C Production method of magnetic modified nanometer zinc oxide whiskers
06/06/2007CN1319649C Device based on partially oxidized porous silicon and method for the production thereof
06/05/2007US7226504 Method to form thick relaxed SiGe layer with trench structure
05/2007
05/31/2007US20070122337 working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment; lithium tantalate having volume resistivity which has been controlled within the range of from 1010 to 1013 Omega cm.
05/30/2007EP1791015A1 Method for making an environmentally stable electro-optic device
05/30/2007EP1466199B1 Three-dimensional photonic crystal waveguide structure
05/30/2007CN1973064A One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
05/24/2007US20070114566 METHOD FOR MAKING FREE-STANDING AlGaN WAFER, WAFER PRODUCED THEREBY, AND ASSOCIATED METHODS AND DEVICES USING THE WAFER
05/23/2007CN1967776A Semiconductor processing system and vaporizer
05/22/2007US7220984 Influence of surface geometry on metal properties
05/17/2007US20070110901 Method for identifying weakly binding molecule fragments having ligand properties, whereby the molecule fragments are applied in the form of microdrops of a corresponding solution to the crystal
05/16/2007EP1786025A1 Process for forming relaxed layers
05/16/2007EP1784528A1 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
05/16/2007CN1316072C Low defect density, ideal oxygen precipitating silicon
05/15/2007US7217320 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
05/09/2007EP1783825A1 Silicon carbide single crystal and method of etching the same
05/09/2007CN1315163C Laser annealing device and its laser annealing method
05/03/2007WO2007049668A1 Method of forming scribe line on substrate of brittle material and scribe line forming apparatus
05/02/2007EP1780781A1 Process for producing silicon wafer and silicon wafer produced by the process
05/02/2007CN1956145A Semiconductor process chamber
05/01/2007US7211143 Sacrificial template method of fabricating a nanotube
05/01/2007US7211141 Method for producing a wafer
04/2007
04/26/2007WO2007046165A1 Process for producing diamond having structure of acicular projection array disposed on surface thereof, diamond material, electrode and electronic device
04/26/2007US20070093026 Method of Making Thin Silicon Sheets for Solar Cells
04/25/2007CN1312329C Method for reducing oxygen component and carbon component in fluoride
04/24/2007US7208428 Method and apparatus for treating article to be treated
04/24/2007US7208196 Oxidation of silicon nitride; overcoating metal substrate; high temperature superconductivity
04/24/2007US7208043 Silicon semiconductor substrate and preparation thereof
04/19/2007WO2007042395A1 Method of repairing a component with an oriented microstructure
04/18/2007EP1775355A2 Method of growing a gallium nitride single crystal
04/18/2007CN1950549A Charge restraining method and apparatus for piezoelectric oxide single crystal
04/12/2007US20070079752 Coloured diamond
04/11/2007EP1772228A1 Process for repairing a workpiece with an oriented microstructure
04/11/2007CN1947042A Solution to thermal budget
04/05/2007US20070077192 Tough diamonds and method of making thereof
04/05/2007DE102005045339A1 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
04/05/2007DE102005045338A1 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
04/05/2007DE102005045337A1 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
04/04/2007CN1942610A Ultrahard diamonds and method of making thereof
04/04/2007CN1941290A Unpolished semiconductor wafer and manufacture method thereof
04/04/2007CN1940150A Method of manufacturing silicon wafer
04/03/2007US7198673 Optical lithography fluoride crystal annealing furnace
04/03/2007US7198670 Method of fabricating board having periodically poled region
03/2007
03/28/2007EP1766676A1 Hybrid epitaxy support and method for making same
03/28/2007CN1936119A InP monocrystal ingot annealing treatment method
03/28/2007CN1936113A Low defect density, ideal oxygen precipitating silicon
03/28/2007CN1936112A 低缺陷浓度的硅 A low defect density silicon
03/22/2007US20070066033 Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and soi wafers (as amended)
03/21/2007EP1258029B1 Method for treating a diamond surface and corresponding diamond surface
03/21/2007CN1933326A Etching method, etched product formed by the same, and piezoelectric vibration device, method for producing the same
03/21/2007CN1305763C Process of producing multicrystalline silicon substrate and solar cell
03/20/2007US7192885 Etching with a solution consisting of water, concentrated hydrofluoric acid and concentrated nitric acid at a temperature between 0 and 15 degrees Celsius
03/20/2007US7192480 fabricating lithium niobate-ion exchange waveguides using a pressurized oxygen atmosphere anneal process to further diffuse ions in the exchange region
03/15/2007WO2007029269A1 Synthesis of large homoepitaxial monocrystalline diamond
03/15/2007WO2006135688A3 Polar surface preparation of nitride substrates
03/15/2007US20070056465 Rapid generation of nanoparticles from bulk solids at room temperature
03/15/2007DE19802131B4 Verfahren zur Herstellung einer monokristallinen Schicht aus einem leitenden oder halbleitenden Material A process for preparing a monocrystalline layer of a conductive or semi-conductive material
03/13/2007US7189430 Controlling adjustment; vapor deposition using xylene
03/13/2007US7189293 Method of producing annealed wafer and annealed wafer
03/08/2007US20070053823 Technique of production of fancy red diamonds
03/08/2007US20070051299 Non-contact etch annealing of strained layers
03/08/2007DE102006033919A1 Polierzusammensetzung und Polierverfahren Polishing composition and polishing method
03/08/2007DE102005038639B4 Verfahren und Vorrichtung zur Vermessung, Ausrichtung und Fixierung sowie Befestigung von Einkristallen auf einem gemeinsamen Träger Method and apparatus for measuring, aligning and fixing and mounting of single crystals on a common carrier
03/07/2007CN1924116A Process for producing silicon wafer
03/07/2007CN1303225C Method for monitoring low-temperature rapid thermal annealing process
03/06/2007US7186350 Providing a substrate with an alignment mark;forming a color resist layer over the substrate and the alignment mark;injecting a solvent to contact the color resist over the alignment mark and dissolve the color resist; removal of the dissolved color resist by vacuum suction to expose alignment mark
02/2007
02/28/2007EP1758154A1 Silicon wafer manufacturing method and silicon wafer
02/28/2007EP1757717A1 Method to deposit ZnO-based crystalline layer and substrate for it
02/28/2007CN1920124A Method for reducing defect concentrations in crystals
02/21/2007EP1754981A1 ZnO SINGLE CRYSTAL AS SUPER HIGH SPEED SCINTILLATOR AND METHOD FOR PREPARATION THEREOF
02/21/2007CN1918697A Process for producing monocrystal thin film and monocrystal thin film device
02/21/2007CN1301212C Method for adjusting unidimensional nano material direction and shape
02/20/2007US7179394 Method for manufacturing liquid crystal display
02/20/2007US7179393 Methods of manufacturing substrates
02/15/2007WO2006119359A3 Method of producing nanocrystalline monolithic articles
02/15/2007US20070036921 Diamond
02/15/2007US20070034147 Method of manufacturing diamond substrates
02/14/2007CN1914126A Method of incorporating a mark in CVD diamond
02/14/2007CN1912197A Method for changing color of discolored natural diamond
02/14/2007CN1912196A Method for removing quadric stress of semiconductor silicon chip
02/14/2007CN1300389C Apparatus for annealing of crystal with high temp. resistance
02/13/2007US7175706 Process of producing multicrystalline silicon substrate and solar cell
02/13/2007US7175704 Method for reducing defect concentrations in crystals
02/13/2007US7174620 Method of manufacturing thin quartz crystal wafer
02/08/2007DE19927527B4 Verfahren zur naßchemischen Behandlung einer Halbleiterscheibe A method for the wet chemical treatment of a semiconductor wafer
02/07/2007CN1908251A Method of growing single crystal gan, method of making single crystal gan substrate and single crystal gan substrate
02/06/2007US7172655 Providing single crystal chemical vapour deposition (CVD) diamond which is coloured and heat treating the diamond under conditions suitable to produce the desired colour
02/01/2007WO2007014032A1 s SEPARATION OF GROWN DIAMOND FROM DIAMOND SEEDS MOSAIC
02/01/2007WO2007013189A1 Silicon wafer and process for producing the same
02/01/2007US20070022940 Method for making a composite substrate and composite substrate according to the method
02/01/2007DE102005035255A1 Ätzmedien für oxidische, transparente, leitfähige Schichten Etching media for oxidic, transparent, conductive layers
01/2007
01/31/2007CN1903710A Method of treating carbon nano tube using electric arc discharging
01/30/2007US7170671 High efficiency wavelength converters
01/30/2007US7169714 Method and structure for graded gate oxides on vertical and non-planar surfaces
01/30/2007US7169669 Method of making thin silicon sheets for solar cells
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