| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 10/17/2007 | CN100343961C Production method for anneal wafer and anneal wafer |
| 10/16/2007 | US7282457 Apparatus for stabilizing high pressure oxidation of a semiconductor device |
| 10/11/2007 | WO2007112719A1 Treatment of crystals for the prevention of optical damage |
| 10/11/2007 | DE102006016201A1 Behandlung von Kristallen zur Vermeidung optischen Schadens Treatment of crystals to avoid optical damage |
| 10/11/2007 | DE102006015781A1 Semiconductor wafer useful for the production of electronic components, comprises inner area arranged in the middle of the wafer, outer area, and a first surface, which is formed of a semiconductor element in the inner area |
| 10/10/2007 | EP1842942A2 GaN crystal substrate |
| 10/10/2007 | CN101052754A Method of surface reconstruction for silicon carbide substrate |
| 10/10/2007 | CN100342503C Annealed wafer and annealed wafer manufacturing method |
| 10/10/2007 | CN100342065C Method of reducing crystal defect density |
| 10/09/2007 | US7279435 Apparatus for stabilizing high pressure oxidation of a semiconductor device |
| 10/04/2007 | US20070228049 Integrated crystal mounting and alignment system for high-throughput biological crystallography |
| 10/04/2007 | DE102006015539A1 Coolant, useful for preparing and/or treating ingots and/or wafers used in semiconductor industry and micro mechanical- and electronic devices, comprises at least a surfactant e.g. organosilicon compounds |
| 10/03/2007 | EP1840560A2 Method of revealing crystalline faults in a massive substrate |
| 09/27/2007 | WO2007107757A2 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials |
| 09/27/2007 | US20070224821 Method for Manufacturing Silicon Wafers |
| 09/27/2007 | US20070224783 Process for forming low defect density, ideal oxygen precipitating silicon |
| 09/27/2007 | US20070221120 Level Realignment Following an Epitaxy Step |
| 09/26/2007 | EP1299900A4 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 09/25/2007 | US7274769 Integrated crystal mounting and alignment system for high-throughput biological crystallography |
| 09/25/2007 | US7273647 Silicon annealed wafer and silicon epitaxial wafer |
| 09/25/2007 | US7273564 Method and apparatus for fabricating flat panel display |
| 09/20/2007 | US20070218202 Directed assembly of highly-organized carbon nanotube architectures |
| 09/19/2007 | EP1835054A2 Gallium nitride substrate and methods for testing and manufacturing it |
| 09/19/2007 | CN101037807A Gan crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device |
| 09/19/2007 | CN101037801A Hf:Er:LiNbO3 crystal and preparation method thereof |
| 09/19/2007 | CN100338270C Monocrystalline silicon buffing sheet heat treatment process |
| 09/18/2007 | US7270720 Obtainable by bending while heating a rod or band-like unfinished workpiece of a single crystal alloy to provide a predetermined curve, cooling followed by reheating; quenching; eyeglass frames; medical equipment; dielectric coatings; tension and compression springs, prevention spiral, arterial stoppers |
| 09/13/2007 | DE102006010273A1 Production of strained layer on strain-compensated layer stacks with small defect density, comprises arranging relaxed silicon-germanium buffer layer on silicon substrate and arranging intermediate layer on relaxed buffer layer |
| 09/12/2007 | EP1660702B1 A method of fabricating an epitaxially grown layer |
| 09/12/2007 | CN100336945C Inner gettering process of heavily boron-doped Czochralski silicon wafer based on quick heat process |
| 09/07/2007 | WO2006041660A8 100 mm silicon carbide wafer with low micropipe density |
| 09/06/2007 | US20070204788 Lithium tantalate substrate and method of manufacturing same |
| 09/05/2007 | EP1829992A1 Process for producing single crystal and process for producing annealed wafer |
| 09/05/2007 | EP1828445A1 Process for producing silicon carbide crystals having increased minority carrier lifetimes |
| 09/04/2007 | US7264750 Single crystal ingot doped with Cerium, Europium, Terbium or Ytterbium; crystal face is composed of a plurality of smooth partial region surfaces |
| 08/29/2007 | CN101024579A Method for surface fit metn of inorganic nano particles on carbon nano tube |
| 08/23/2007 | WO2007094231A1 Method for manufacturing semiconductor substrate |
| 08/23/2007 | WO2007094126A1 Method of recovering sodium metal from flux |
| 08/23/2007 | US20070193499 Zno single crystal as super high speed scintillator... |
| 08/23/2007 | DE60123592T2 Hochtemperatur/hochdruck-farbeveränderung von diamanten High-temperature / high-pressure change color of diamonds |
| 08/23/2007 | DE60123591T2 Hochtemperatur/hochdruck-farbeveränderng von diamanten High-temperature / high-pressure farbeveränderng of diamonds |
| 08/22/2007 | EP1821339A1 GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device |
| 08/22/2007 | EP1122342B1 Method for removing defects of single crystal material |
| 08/21/2007 | US7258931 Configured to reduce the volume of thin film residues on a top surface adjacent an edge, and to inhibit redeposition of residue particulates on the top surfaces during processing |
| 08/21/2007 | US7258743 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure |
| 08/21/2007 | US7258739 Process for producing epitaxial silicon wafer and silicon wafer produced by process thereof |
| 08/15/2007 | EP1818429A2 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate |
| 08/15/2007 | EP1817445A1 Method for making a dismountable substrate |
| 08/15/2007 | EP1537258B1 Method of fabricating substrates, in particular for optics, electronics or optoelectronics---------------------------------------- |
| 08/15/2007 | EP1402089B1 Synthesis of stable colloidal nanocrystals using organic dendrons |
| 08/15/2007 | EP1347852B1 Method of forming nano-crystalline structures |
| 08/15/2007 | CN1332078C Polarization method for lithium niobate |
| 08/15/2007 | CN1332077C Lithium niobate substrate and manufacturing method thereof |
| 08/15/2007 | CN101019212A Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution |
| 08/15/2007 | CN101016651A Annealed wafer and manufacturing method of annealed wafer |
| 08/14/2007 | US7256478 Notched compound semiconductor wafer |
| 08/14/2007 | US7256477 Notched compound semiconductor wafer |
| 08/14/2007 | US7256476 Notched compound semiconductor wafer |
| 08/14/2007 | US7255740 Method of growing hexagonal single crystals and use of same as substrates for semiconductor elements |
| 08/08/2007 | EP1816238A1 Preferential hardening of signle crystal blades |
| 08/02/2007 | WO2007056745A3 Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
| 08/02/2007 | DE102006002903A1 Treatment of oxygen-containing semiconductor wafer, comprises irradiating second side of wafer with high-energy particles to produce crystal defects in second semiconductor region of wafer, and heating wafer |
| 08/01/2007 | EP1814149A1 METHOD FOR ABRASING GaN SUBSTRATE |
| 08/01/2007 | CN101008105A Repair method of crystalline structures by epitaxy |
| 07/31/2007 | US7250081 Methods for repair of single crystal superalloys by laser welding and products thereof |
| 07/26/2007 | WO2007083477A1 Method for manufacturing silicon single crystal wafer |
| 07/26/2007 | WO2007083476A1 Process for producing silicon single crystal wafer |
| 07/26/2007 | WO2007083155A1 A method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| 07/26/2007 | US20070169688 Method for manufacturing silicon wafer |
| 07/26/2007 | CA2636471A1 A method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| 07/25/2007 | EP1811065A1 Single crystal silicon wafer for insulated gate bipolar transistors and process for producing the same |
| 07/19/2007 | US20070167021 Method of Manufacturing Nitride Substrate for Semiconductors |
| 07/18/2007 | EP1658519A4 Solution to thermal budget |
| 07/18/2007 | CN1327048C Method for flattening surface of oxide crystal to ultra high degree |
| 07/18/2007 | CN1327047C N-type heat treatment process for HgCdTe materials grown from melting method |
| 07/17/2007 | US7244306 Method for measuring point defect distribution of silicon single crystal ingot |
| 07/12/2007 | US20070160872 Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride |
| 07/12/2007 | US20070160501 Device and method for treating a crystal by applying microdrops thereto |
| 07/12/2007 | DE10047346B4 Verfahren zur Herstellung eines Siliciumwafers zur Abscheidung einer Epitaxieschicht und Epitaxiewafer A process for producing a silicon wafer for the deposition of an epitaxial layer and epitaxial wafer |
| 07/11/2007 | EP1806775A1 Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution |
| 07/11/2007 | EP1806438A1 Method of surface reconstruction for silicon carbide substrate |
| 07/11/2007 | EP1806199A2 System and Method for Blind Laser Brazing |
| 07/05/2007 | WO2007074242A1 Method for making a plate-like detachable structure, in particular made of silicon, and use of said method |
| 07/05/2007 | WO2007074027A1 Simplified method of producing an epitaxially grown structure |
| 07/05/2007 | US20070155004 Treatment of crystals in order to avoid light-induced modifications of the refractive index |
| 07/04/2007 | CN1992168A Fabrication method and fabrication apparatus of group III nitride crystal substance |
| 07/04/2007 | CN1324660C Rectangular nitride semiconductor substrate capable of identifying outside and inside |
| 07/04/2007 | CN1324167C Lithium tantanate substrate and its prepn. process |
| 07/03/2007 | US7238425 Outer cylindrical shell and a telescoped segment partially housed within its interior cavity and partially extending from the outermost shell; use as a linear or rotational bearing in microelectromechanical systems or a constant force nanospring |
| 06/28/2007 | WO2007071772A1 Method for the manufacture of substrates, in particular for the optical, electronic or optoelectronic areas, and the substrate obtained in accordance with the said method |
| 06/28/2007 | WO2007071771A1 Method for making a composite substrate and composite substrate according to said method |
| 06/28/2007 | US20070148374 Method of incorporating a mark in cvd diamond |
| 06/28/2007 | US20070145003 Method of etching semiconductor device |
| 06/27/2007 | EP1543181B1 Single crystal diamond |
| 06/27/2007 | CN1986912A Process of preparing monocrystalline InP with nano square pore array |
| 06/20/2007 | CN1985368A Support for hybrid epitaxy and method of fabrication |
| 06/20/2007 | CN1985362A Silicon carbide single crystal and method of etching the same |
| 06/20/2007 | CN1322562C Monitoring low-temp quick thermal annealing process by ion implanted chip |
| 06/14/2007 | DE102005059531A1 Preparation of highly pure, preferably radiation-stable large volume single crystals, useful in e.g. lenses, comprises producing a melt obtained from crystal raw material and controlled cooling under solidification |
| 06/14/2007 | DE102004017142B4 Lithiumtantalat-Substrat und Verfahren zu seiner Herstellung Lithium tantalate substrate and process for its preparation |