| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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| 01/31/2008 | WO2008011897A1 Method for smoothing iii-n substrates |
| 01/31/2008 | US20080026234 Epitaxial oxide films via nitride conversion |
| 01/31/2008 | US20080023438 Method of manufacturing a liquid crystal display apparatus |
| 01/30/2008 | EP1882057A2 A high resistivity silicon structure and a process for the preparation thereof |
| 01/30/2008 | CN100365174C Process for treating a semiconductor wafer with a gaseous medium, and semiconductor wafer treated by this process |
| 01/29/2008 | US7323356 Growing a base thin film on a single-crystal substrate; depositing amorphous or polycrystalline LnCuOX thin film to form laminate; and annealing film at 500 degrees C. or more in a vacuum environment; light-emitting diodes, semiconductor leasers, filed-effect transistors, hetero-bipolar transistors |
| 01/29/2008 | US7323156 High pressure/high temperature production of colorless and fancy-colored diamonds |
| 01/29/2008 | US7323051 One hundred millimeter single crystal silicon carbide wafer |
| 01/29/2008 | US7323050 Method of producing lithium tantalate crystal |
| 01/24/2008 | WO2008010541A1 Method for reducing dislocation in group iii nitride crystal and substrate for epitaxial growth |
| 01/24/2008 | US20080017312 Method and apparatus for fabricating flat panel display |
| 01/23/2008 | EP1404902A4 High surface quality gan wafer and method of fabricating same |
| 01/23/2008 | CN101110362A Method for improving thin thermal oxidation film |
| 01/16/2008 | EP1877599A2 Method of producing nanocrystalline monolithic articles |
| 01/10/2008 | WO2008004657A1 p-TYPE ZINC OXIDE THIN FILM AND METHOD FOR FORMING THE SAME |
| 01/10/2008 | DE19503623B4 Drehratensensor Rotation rate sensor |
| 01/10/2008 | DE102006031253A1 Device for the electrochemical etching of silicon wafer, comprises chamber filled with electrolyte, current source and first- and second electrode connected to anode and cathode of the current source respectively |
| 01/09/2008 | CN100361026C Method and apparatus for fabricating flat panel display |
| 01/08/2008 | US7316969 Method and apparatus for thermally treating substrates |
| 01/08/2008 | US7316747 Seeded single crystal silicon carbide growth and resulting crystals |
| 01/08/2008 | US7316745 High-resistance silicon wafer and process for producing the same |
| 01/03/2008 | US20080003458 Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride |
| 01/03/2008 | DE10336110B4 Vorrichtung und Verfahren zum Behandeln eines Proteinkristalls Apparatus and methods for treating a protein crystal |
| 01/02/2008 | EP1873280A1 Oxygen-doped N-type gallium nitride single crystal substrate and method for producing the same |
| 01/02/2008 | EP1872388A1 A method of bonding two wafers made out of materials selected from semiconductor materials |
| 01/02/2008 | EP1871162A2 Nanowire dispersion compositions and uses thereof |
| 01/02/2008 | EP1435347B1 Method of joining oxide superconductor and oxide superconductor joiner |
| 12/27/2007 | US20070295265 Method for Producing Silicon Wafer and Silicon Wafer |
| 12/26/2007 | EP1868953A2 Composition and method for polishing a sapphire surface |
| 12/26/2007 | CN101094940A Magnesium oxide single crystal having controlled crystallinity and method for preparation thereof, and substrate using said single crystal |
| 12/26/2007 | CN101092752A Technique for cleaning silicon chip |
| 12/26/2007 | CN101092751A Method and device for treating a semi-conductor wafer |
| 12/26/2007 | CN101092750A Method for raising purity of gold Nano bar |
| 12/26/2007 | CN101092739A Method for preparing high water soluble Nano carbon tube grafted by super branched polymer |
| 12/26/2007 | CN100358194C Method for preparing composite Ti:Al2O3 laser rod |
| 12/25/2007 | US7311888 Annealed wafer and method for manufacturing the same |
| 12/25/2007 | US7311775 Method for heat-treating silicon wafer and silicon wafer |
| 12/25/2007 | US7311774 Shaped nanocrystal particles and methods for working the same |
| 12/21/2007 | WO2007144557A1 Friction welding of a single crystal component to a second component with minimisation of in plane friction and forge forces |
| 12/21/2007 | CA2653854A1 Friction welding of a single crystal component to a second component with minimisation of in plane friction and forge forces |
| 12/20/2007 | US20070292339 Iron Oxide Whisker of High Aspect Ratio, Titanium Oxide Whisker of High Aspect Ratio, Structure Containing These and Process for Producing Them |
| 12/20/2007 | US20070290408 Annealing single crystal chemical vapor deposition diamonds |
| 12/20/2007 | US20070289524 Lithium tantalate substrate and method of manufacturing same |
| 12/19/2007 | EP1868252A2 Method of storing GaN substrate, stored substrate and semiconductor device and method of its manufacture |
| 12/19/2007 | CN100356524C Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| 12/18/2007 | US7309477 Single crystal diamond grown by microwave plasma chemical vapor deposition and annealed at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa. |
| 12/18/2007 | US7309393 High resistivity aluminum antimonide radiation detector |
| 12/18/2007 | US7309392 Lithium niobate substrate and method of producing the same |
| 12/13/2007 | WO2007143072A2 Wet etch suitable for creating square cuts in si and resulting structures |
| 12/13/2007 | US20070284696 Nitride Semiconductor Substrate |
| 12/13/2007 | DE10066124B4 Silicon wafer used in the production of a single crystal silicon ingot consists of a perfect domain with a lower detection boundary of agglomerates |
| 12/13/2007 | DE10030887B4 Verfahren zum Herstellen eines gesinterten Körpers aus Material für ein thermoelektrisches Element A method for producing a sintered body of material for a thermoelectric element |
| 12/06/2007 | US20070282030 Multibeam interference; pyrolysis; chemical vapor deposition |
| 12/06/2007 | US20070277725 Process For Preparing Caf2 Lens Blanks Especially For 193 Nm And 157 Nm Lithography With Minimized Deffects |
| 12/05/2007 | EP1863074A2 Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device |
| 12/05/2007 | CN101084330A Low micropipe 100 mm silicon carbide wafer |
| 12/04/2007 | US7303628 Nanocrystals with linear and branched topology |
| 12/04/2007 | US7303627 Method for making low-stress large-volume not-(111)-oriented crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby |
| 11/29/2007 | US20070275333 Method for Controlling the Treatment of a Crystal with a Liquid |
| 11/28/2007 | CN101080515A Process for producing single crystal and process for producing annealed wafer |
| 11/28/2007 | CN100351436C Lithium tantalate substrate and method for producing same |
| 11/22/2007 | US20070266934 Method of forming a silicon dioxide film |
| 11/22/2007 | DE102006023497A1 Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe Method and apparatus for treating a semiconductor wafer |
| 11/22/2007 | DE102006022093A1 Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe durch Ätzen Method and apparatus for treating a semiconductor wafer by etching, |
| 11/21/2007 | EP1857576A2 Method and device for treating a semi-conductor wafer |
| 11/21/2007 | CN101075558A Method of silicon slices |
| 11/21/2007 | CN101074494A Method for processing diamond containing refraction flash band |
| 11/21/2007 | CN101074489A 硅晶片 Silicon wafer |
| 11/21/2007 | CN100350564C Semiconductor chip with asymmetric edge contour and manufacturing method thereof |
| 11/21/2007 | CN100350562C Method for preparation of ferroelectric single crystal film structure using deposition method |
| 11/21/2007 | CN100350554C Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
| 11/20/2007 | US7297989 Diboride single crystal substrate, semiconductor device using this and its manufacturing method |
| 11/20/2007 | US7297565 Liquid crystal display device and fabricating method thereof |
| 11/20/2007 | US7297209 Method and device for transferring anisotropic crystal film from donor to receptor, and the donor |
| 11/15/2007 | WO2007107757A3 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials |
| 11/15/2007 | US20070261633 GaN crystal substrate and method of manufacturing the same, and method of manufacturing semiconductor device |
| 11/14/2007 | EP1855312A1 PROCESS FOR PRODUCING SiC SINGLE-CRYSTAL SUBSTRATE |
| 11/14/2007 | EP1158076B1 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer |
| 11/14/2007 | CN101071835A Method for preparing low voltage light-emitting macro ZnO semiconductor single crystal material |
| 11/14/2007 | CN101070621A Low defect density, self-interstitial dominated silicon |
| 11/14/2007 | CN100348785C Lithium tantalate substrate and process for producing the same |
| 11/14/2007 | CN100348784C Lithium tantalate substrate and method for producing same |
| 11/14/2007 | CN100348782C Low defect density silicon substantially free of oxidution induced stacking faults having vacancy-dominated core |
| 11/13/2007 | US7294165 Method of forming nano-crystalline structures and product formed thereof |
| 11/08/2007 | DE102006020825A1 Verfahren zur Herstellung einer Schichtenstruktur A method for producing a layer structure |
| 11/07/2007 | EP1852905A1 Method of selective etching and silicon single crystal substrate |
| 11/07/2007 | EP1852480A1 Method of processing a surface of group III nitride crystal and group III nitride crystal substrate |
| 11/01/2007 | WO2007123735A1 Methods for controllable doping of aluminum nitride bulk crystals |
| 11/01/2007 | WO2007123093A1 Single crystal sapphire substrate |
| 11/01/2007 | US20070251443 Method for making low-stress large-volume not-(111)-oriented crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby |
| 10/30/2007 | US7288791 Epitaxial wafer and method for manufacturing method |
| 10/30/2007 | US7288468 Luminescent efficiency of semiconductor nanocrystals by surface treatment |
| 10/30/2007 | US7288430 Method of fabricating heteroepitaxial microstructures |
| 10/23/2007 | CA2291191C Eutectic bonding of single crystal components |
| 10/18/2007 | US20070243695 Method for Producing Semiconductor Wafers and a System for Determining a Cut Position in a Semiconductor Ingot |
| 10/18/2007 | US20070240633 One hundred millimeter single crystal silicon carbide wafer |
| 10/18/2007 | US20070240630 One hundred millimeter single crystal silicon carbide water |
| 10/17/2007 | EP1493214B1 Solid-state laser devices with radial dopant valence profile |
| 10/17/2007 | EP1466026B1 Superelastic element made of a copper alloy and method for imparting and preserving a curvature of a given geometry |
| 10/17/2007 | CN101055847A Method of revealing crystalline defects in a bulk substrate |