Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
07/2008
07/09/2008CN100400722C Method for removing quadric stress of semiconductor silicon chip
07/03/2008US20080158655 Method for Preparing a Periodically Poled Structure
07/03/2008US20080156254 Nitride Single Crystal Seeded Growth in Supercritical Ammonia with Alkali Metal Ion
07/02/2008EP1641965A4 Single-crystal-like materials
07/02/2008EP1537263A4 Semiconductor nanocrystal heterostructures
07/02/2008CN100399600C Rapid circulating crystallizing device and method for preparing nanometer crystal material
06/2008
06/25/2008CN101208463A Apparatus and method for maintaining a near-atmospheric pressure inside a process chamber
06/25/2008CN100397595C Method for manufacturing silicon wafer
06/24/2008US7390568 Semiconductor nanocrystal heterostructures having specific charge carrier confinement
06/19/2008US20080142475 Method of creating solid object from a material and apparatus thereof
06/19/2008DE10022649B4 Polierflüssigkeit und Verfahren zur Strukturierung von Metalloxiden Polishing liquid and method for patterning metal oxides
06/18/2008EP1931498A1 Method of repairing a component with an oriented microstructure
06/12/2008DE102007044924A1 Verfahren des Identifizierens von Kristalldefektbereichen in monokristallinem Silizium unter Verwendung von Metalldotierung und Wärmebehandlung Method of identifying crystal defect regions in monocrystalline silicon using metal doping and heat treatment
06/11/2008CN201071404Y High-temperature constant-temperature heating mechanism for nonlinear optical crystal of laser
06/11/2008CN100393922C Method of fabricating an epitaxially grown layer
06/05/2008US20080131818 Method for fabrication liquid crystal display device and diffraction mask therefor
06/05/2008US20080128708 GaN single crystal substrate and method for processing surface of GaN single crystal substrate
06/05/2008US20080127884 Bulk single crystal gallium nitride and method of making same
06/05/2008DE102005021642B4 Verfahren zur Herstellung eines einkristallinen Formkörpers A process for preparing a single crystalline form body
06/04/2008CN101194055A Method of producing nanocrystalline monolithic articles
06/04/2008CN100392444C Method for producing photon crystal and controllable defect therein
05/2008
05/29/2008US20080121612 Method for fabricating an LCD device
05/29/2008DE102006023497B4 Verfahren zur Behandlung einer Halbleiterscheibe A process for treating a semiconductor wafer
05/28/2008EP1926134A1 Method for manufacturing silicon epitaxial wafers
05/28/2008EP1556901B1 Layer arrangement of hetero-connected semiconductor layers, comprising at least one intermediate separation layer, and method for the production thereof
05/28/2008CN101187065A Method of identifying crystal defect region in monocrystalline silicon using metal contamination and heat treatment
05/28/2008CN101187059A Silicon wafer having good intrinsic getterability and method for its production
05/28/2008CN101187058A Silicon wafer for semiconductor and manufacturing method thereof
05/28/2008CN101185913A Method for separating metallicity and semiconductivity nano-tube from single wall carbon nano-tube
05/28/2008CN100390331C Method and apparatus for polishing large-scale diamond membrane
05/22/2008US20080118767 Material for Vapor Sources of Alkali and Alkaline Earth Metals and a Method of its Production
05/22/2008US20080115721 Methods for forming alkali halide ingots into rectangular plates
05/21/2008EP1922759A2 Nanowires-based transparent conductors
05/21/2008EP1922746A2 Stably passivated group iv semiconductor nanoparticles and methods and compositions thereof
05/21/2008EP1483782A4 Production method of sic monitor wafer
05/21/2008DE10261362B4 Substrat-Halter Substrate holder
05/20/2008US7374613 Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation
05/20/2008US7374612 Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal
05/14/2008EP1551768A4 Process for manufacturing a gallium rich gallium nitride film
05/14/2008CN101177336A Aluminium-manganese glass powder and its application in a-Al2O3 single crystal wafer
05/14/2008CN100387761C InP monocrystal ingot annealing treatment method
05/08/2008WO2008055067A2 Method and apparatus for forming a silicon wafer
05/08/2008WO2007098215A3 Method for growth of semipolar (al,in,ga,b)n optoelectronic devices
05/08/2008CA2661324A1 Method and apparatus for forming a silicon wafer
05/07/2008EP1216316B1 Polishing of fluoride crystal optical lenses and preforms using cerium oxide for microlithography
05/07/2008CN101174597A GaN single crystal substrate and method for processing surface of GaN single crystal substrate
05/02/2008WO2008051413A1 Reverse oxidation post-growth process for tailored gain profile in solid-state devices
04/2008
04/30/2008EP1563122A4 Method for forming carbon nanotubes
04/30/2008DE102004054566B4 Verfahren und Vorrichtung zum Einebnen einer Halbleiterscheibe sowie Halbleiterscheibe mit verbesserter Ebenheit Method and apparatus for planarizing a semiconductor wafer and semiconductor wafer with improved flatness
04/23/2008EP1914795A1 Silicon wafer for semiconductor and manufacturing method thereof
04/23/2008EP1912894A1 Separation of grown diamond from diamond seeds mosaic
04/23/2008CN101165224A Germanium doping silicon wafer with internal purity absorbing function and preparation method thereof
04/22/2008US7361219 Method for producing silicon wafer and silicon wafer
04/16/2008CN100381616C Selectively aligning nanometer-scale components using AC fields
04/15/2008US7357877 Dispersion of nanowires of semiconductor material
04/10/2008WO2007143072B1 Wet etch suitable for creating square cuts in si and resulting structures
04/10/2008US20080085233 Single crystal diamond
04/10/2008DE102007027111A1 Silicon disk, for use in electronic components, has a zone of rotational symmetry with a low bulk micro defect density
04/09/2008EP1909315A1 Silicon wafer and process for producing the same
04/09/2008CN101158052A Alkaline etching solution for semiconductor wafer and alkaline etching method
04/09/2008CN100379901C III-V nitride substrate boule and its manufacturing method and use
04/08/2008US7355216 Fluidic nanotubes and devices
04/08/2008US7354619 Protection of the SiC surface by a GaN layer
04/03/2008WO2008038786A1 Silicon wafer heat treatment method
04/03/2008US20080081767 Magnesium Oxide Single Crystal Having Controlled Crystallinity and Method for Producing the Same, and Substrate Using the Single Crystal
04/03/2008DE102006044366A1 Simultaneous cutting of disks from a cylindrical workpiece by saw wires measures the density of the abrasive suspension in the tank, for replacement when at a threshold level
04/02/2008EP1905873A1 HEAT TREATMENT METHOD FOR ZnTe SINGLE CRYSTAL SUBSTRATE AND ZnTe SINGLE CRYSTAL SUBSTRATE
04/02/2008EP1904901A1 Reinforced micromechanical part
04/01/2008US7351286 One hundred millimeter single crystal silicon carbide wafer
04/01/2008CA2352985C Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same
03/2008
03/26/2008EP1105920B1 Pattern formation method using light-induced suppression of etching
03/21/2008CA2603693A1 Polycrystalline diamond composites
03/19/2008EP1900858A1 Epitaxial wafer and method of producing same
03/19/2008EP1899509A1 Apparatus and method for maintaining a near-atmospheric pressure inside a process chamber
03/18/2008US7344595 Method and apparatus for purification of crystal material and for making crystals therefrom and use of crystals obtained thereby
03/18/2008CA2446878C Synthesis of stable colloidal nanocrystals using organic dendrons
03/12/2008EP1897965A1 A process for eliminating precipitates from a semiconductor II-VI material by annealing.
03/12/2008EP1897853A1 Process for producing conductive mayenite compound
03/12/2008EP1614166A4 Fluidic nanotubes and devices
03/12/2008CN101140868A Epitaxial wafer and method of producing same
03/12/2008CN101139733A Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it
03/12/2008CN100374369C Method of treating carbon nano tube using electric arc discharging
03/11/2008US7341628 Method to reduce crystal defects particularly in group III-nitride layers and substrates
03/05/2008EP1894900A2 Catalyst-aided chemical processing method and apparatus
03/05/2008CN101138071A A method of bonding two wafers made out of materials selected from semiconductor materials
03/04/2008US7338555 Highly crystalline aluminum nitride multi-layered substrate and production process thereof
02/2008
02/27/2008CN100372076C Treatment method and apparatus of substrate
02/21/2008DE102006037267A1 Halbleiterscheiben mit hochpräzisem Kantenprofil und Verfahren zu ihrer Herstellung Semiconductor wafers with high precision edge profile and process for their preparation
02/20/2008EP1888821A1 Low basal plane dislocation bulk grown sic wafers
02/19/2008US7332031 Bulk single crystal gallium nitride and method of making same
02/19/2008US7331306 Plasma processing method and apparatus
02/14/2008WO2007143072A3 Wet etch suitable for creating square cuts in si and resulting structures
02/14/2008US20080038564 Method of Producing a Plate-Shaped Structure, in Particular, From Silicon, Use of Said Method and Plate-Shaped Structure Thus Produced, in Particular From Silicon
02/13/2008CN101122026A Polysilicon planarization solution for planarizing low temperature polysilicon film panel
02/12/2008US7329364 Method for manufacturing bonded wafer with ultra-thin single crystal ferroelectric film
02/07/2008WO2007107757B1 Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials
02/07/2008DE102006034786A1 Monokristalline Halbleiterscheibe mit defektreduzierten Bereichen und Verfahren zu ihrer Herstellung Monocrystalline semiconductor wafer with reduced defect areas, and methods for their preparation
02/06/2008CN100366802C Coloured diamond
02/06/2008CN100366349C Method for preparing phospho silane-rare earth nanometer membrane on single crystal silicon sheet surface
02/05/2008US7326477 Optoelectronic devices, light emitting diodes (LEDs) and lasers; specific crystallographic orientation, and the flats are provided to extend along desired plane sets. The flats may advantageously identify orientation of cleavage planes, and direction of cleavage of cleavage planes
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