Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
10/2008
10/29/2008CN101296787A Method of forming scribe line on substrate of brittle material and scribe line forming apparatus
10/29/2008CN100429753C Plasma processing method, semiconductor substrate and plasma processing apparatus
10/28/2008US7442253 Process for forming low defect density, ideal oxygen precipitating silicon
10/28/2008US7442250 Lithium tantalate substrate and method for producing same
10/23/2008DE10344986B4 Verfahren zur Erzeugung verbesserter heteroepitaktischer gewachsener Siliziumkarbidschichten auf Siliziumsubstraten A method for generating improved heteroepitaxial grown on silicon substrates Siliziumkarbidschichten
10/22/2008EP1982370A1 A method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
10/16/2008WO2008123801A1 Diamond cleaning method
10/16/2008WO2007127191A3 Porous processing carrier for flexible substrates
10/16/2008DE10205084B4 Verfahren zur thermischen Behandlung einer Siliciumscheibe sowie dadurch hergestellte Siliciumscheibe Method for the thermal treatment of a silicon wafer and silicon wafer produced thereby
10/16/2008DE102005013831B4 Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe Silicon wafer and method for heat treating a silicon wafer
10/16/2008DE10066120B4 Verfahren zur Wärmebehandlung eines Siliciumwafers und der wärmebehandelte Siliciumwafer A method for heat treating a silicon wafer and the heat-treated silicon wafer
10/15/2008EP1980652A2 Multilayer nanocrystal structure and method for producing the same
10/15/2008EP1979933A1 Method for the manufacture of substrates, in particular for the optical, electronic or optoelectronic areas, and the substrate obtained in accordance with the said method
10/15/2008EP1654405B1 Method for treating a crystal by applying microdrops thereto
10/15/2008EP1495163B1 Selectively aligning nanparticles using ac fields
10/09/2008DE10066121B4 Verfahren zur Wärmebehandlung eines Siliciumwafers und der wärmebehandelte Siliciumwafer A method for heat treating a silicon wafer and the heat-treated silicon wafer
10/08/2008EP1620881B1 Method for texturing surfaces of silicon wafers
10/08/2008EP1052313B1 Silicon wafer and method of manufacture thereof
10/08/2008CN100424817C Method of manufacturing nitride substrate for semiconductors, and nitride semiconductor substrate
10/08/2008CN100424235C Process for producing lithium tantalate crystal
10/07/2008US7431765 Process for preparing single crystal silicon having improved gate oxide integrity
10/02/2008US20080241049 A single crystal diamond grown by microwave plasma chemical vapor deposition, annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa; enhanced optical characteristics
10/02/2008DE102007015351A1 Procedure and device for accurate positioning of ion beam during simultaneous determination of its abrasion profile, comprise an arrangement of optically transparent carrier material, which is covered with optically opaque thin layer
10/02/2008DE10066123B4 Process for heat treating a silicon wafer used in the production of semiconductor circuits comprises forming a silicon wafer having a specified oxygen concentration
10/01/2008EP1975990A1 Method for manufacturing silicon single crystal wafer
10/01/2008EP1975283A1 Process for producing silicon single crystal wafer
10/01/2008EP1641964B1 Process for preparing a stabilized ideal oxygen precipitating silicon wafer
10/01/2008CN201125281Y Germanium single crystal heat pressing deformation apparatus
10/01/2008CN101277782A Method of repairing a component with an oriented microstructure
10/01/2008CN101275287A Whirl etching system and method for large area silicon chips
10/01/2008CN101275286A Wafer support pin for preventing slip dislocation during annealing of wafer and wafer annealing method using the same
10/01/2008CN101275285A Tetrapod zinc oxide whisker coated with functional layer and preparation thereof
10/01/2008CN101275281A Method for growth and anneal of zincum-cadmium-tellurium single-crystal, special copple for anneal
10/01/2008CN100423215C Shaped nanocrystal particles and methods for working the same
09/2008
09/25/2008WO2008114466A1 Silicon of prismatic shape and process for producing the same
09/25/2008US20080229999 Method Of Manufacturing A Calcium Fluoride Single Crystal
09/24/2008EP1972002A1 Simplified method of producing an epitaxially grown structure
09/24/2008CN100420569C Free-standing (Al, Ga, In)N and parting method for forming same
09/23/2008US7427329 Temperature control for single substrate semiconductor processing reactor
09/18/2008US20080223285 Methods for transferring a layer onto a substrate
09/18/2008DE10343522B4 Verfahren und Speichermedium zur Steuerung der Behandlung eines Kristalls mit einer Flüssigkeit A method and storage medium for controlling the treatment of a crystal with a liquid
09/17/2008EP1459372A4 Shaped nanocrystal particles and methods for making the same
09/17/2008CN100419135C Method for fabricating low-defect-density changed orientation Si
09/16/2008US7425276 Method for etching microchannel networks within liquid crystal polymer substrates
09/11/2008US20080216892 Shaped nanocrystal particles and methods for making the same
09/11/2008DE202008008720U1 Drahtsägevorrichtung A wire saw
09/10/2008CN101260567A Modified four-feet needle-shaped zinc oxide crystal whisker and preparation method thereof
09/04/2008US20080210975 Method of fabricating heteroepitaxial microstructures
09/04/2008US20080210164 Heat treatment apparatus and heat treatment method
09/03/2008EP1723086B1 Method of incoporating a mark in cvd diamond
09/03/2008CN101255544A Method for preparing nano metal or metal oxide/carbon nano-tube composite material
09/03/2008CN100415953C Process of preparing monocrystalline InP with nano square pore array
09/03/2008CN100415948C Diboride single crystal substrate, semiconductor device using this and its manufacturing method
09/03/2008CN100415947C Method of fabricating an epitaxially grown layer
08/2008
08/28/2008US20080202650 Heat Treatment Method For Monocrystalline or Directionally Solidified Structural Components
08/28/2008US20080202582 Process for Producing Monocrystal Thin Film and Monocrystal Thin Film Device
08/28/2008DE102007009281A1 Procedure for the production of material deposition for semiconductor material wafer, comprises creating damage in a semiconductor material and subsequently treating the semiconductor material by heat for ten hours
08/27/2008EP1962348A2 Nanowires-based transparent conductors
08/27/2008EP1961843A2 Method for producing BaLiF3 single crystal
08/27/2008EP1961702A1 METALLIC ELECTROCONDUCTIVE 12Cao·7Al2O3 COMPOUND AND PROCESS FOR PRODUCING THE SAME
08/27/2008EP1740735B1 Heat treatment method for monocrystalline or directionally solidified structural components
08/21/2008DE102005045337B4 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
08/20/2008EP1264011A4 Iii-v nitride substrate boule and method of making and using the same
08/20/2008EP1197992B1 Production method for a semiconductor wafer
08/19/2008US7413430 Crystal base plate and pressing device
08/19/2008CA2405362C High temperature/high pressure colour change of diamond
08/14/2008US20080190355 Low-Doped Semi-Insulating Sic Crystals and Method
08/13/2008EP1192646B1 Cyclic thermal anneal for dislocation reduction
08/13/2008CN101240447A 硅晶片及其制造方法 A silicon wafer and manufacturing method thereof
08/12/2008US7411273 Nitride semiconductor substrate
08/12/2008US7410911 Method for stabilizing high pressure oxidation of a semiconductor device
08/12/2008US7410794 Flat macroporous support material with pores extending the length of surface; silicon dioxide walls; DNA, proteins, oligonucleotide probes captured by covalent binding
08/12/2008CA2405420C High temperature/high pressure colour change of diamond
08/07/2008WO2008092421A2 Optical cleaning of crystals
08/06/2008EP1953273A2 Method of incorporating a mark in CVD diamond
08/06/2008CN101238557A Silicon wafer and method for producing same
07/2008
07/31/2008DE102007004400A1 rystal preparation, particularly lithium niobate or lithium tantalate crystal for use in optical component, involves heating of crystal to temperature at which ions in crystal are movable and result in conductivity
07/31/2008DE10052411B4 Wärmebehandlungsverfahren eines Siliciumwafers und der wärmebehandelte Siliciumwafer Heat treatment method of a silicon wafer and the heat-treated silicon wafer
07/30/2008EP1950800A2 III-V compound semiconductor substrate manufacturing method
07/30/2008CN101230482A Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
07/24/2008WO2008088848A1 Enhanced diamond polishing
07/24/2008US20080173615 Etch resist solution, method of fabricating thin film pattern using the same and method of fabricating an LCD device using the same
07/23/2008EP1947220A1 Process for producing diamond having structure of acicular projection array disposed on surface thereof, diamond material, electrode and electronic device
07/23/2008EP1945838A2 Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
07/23/2008CN101228301A High resistivity silicon structure and a process for the preparation thereof
07/23/2008CN101228300A Heat treatment method for ZnTe single crystal substrate and ZnTe single crystal substrate
07/23/2008CN101225550A Method for improving wafer defect
07/23/2008CN101225549A Method for preparing p-type zinc oxide thin film by using n-type zinc oxide
07/23/2008CN100405628C Piezoelectric single crystal device and fabrication method thereof
07/17/2008US20080171133 Method For the Production of C-Plane Oriented Gan Substrates or AlxGa1-xN Substrates
07/17/2008DE102007063039A1 Method for production of silicon wafer, involves cutting silicon monocrystal block to manufacture wafer, and edge of wafer is bended cut from block
07/16/2008CN101221906A Method of fabricating semiconductor device and method for fabricating electronic device
07/16/2008CN101220520A Germanium monocrystal hot pressing deforming technique
07/16/2008CN101220519A Germanium monocrystal hot pressing deforming device
07/16/2008CN101220513A Thermal treatment method for improving type N polycrystal Bi2Te3thermoelectricity capability
07/16/2008CN101220244A High surface quality GaN wafer and method of fabricating same
07/16/2008CN100402421C Tough diamonds and method of making thereof
07/09/2008EP1941981A1 Method of forming scribe line on substrate of brittle material and scribe line forming apparatus
07/09/2008CN100401470C Method for controlling and removing fog-shaped micro-defect of silicon gas-phase epitaxial layer
07/09/2008CN100400723C Heat treatment method after silicon carbide monocrystal growth
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