| Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
|---|
| 08/20/2009 | US20090210166 Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal |
| 08/19/2009 | EP2089562A1 Reverse oxidation post-growth process for tailored gain profile in solid-state devices |
| 08/19/2009 | CN101509146A Method of manufacturing group III nitride crystal |
| 08/19/2009 | CN100528410C Method of removing casting defects |
| 08/18/2009 | US7576372 Method for making free-standing AlGaN wafer, wafer produced thereby, and associated methods and devices using the wafer |
| 08/13/2009 | DE102009006397A1 Polysiliziumschicht-Entfernverfahren und Speichermedium Polysilicon layer Removal and storage medium |
| 08/12/2009 | EP1723455B1 Process for producing photonic crystals |
| 08/12/2009 | EP1485956A4 Process of producing multicrystalline silicon substrate and solar cell |
| 08/05/2009 | CN101499435A Semiconductor chip lifting apparatus |
| 08/05/2009 | CN101498055A Polishing treatment method for solar grade monocrystal silicon bar |
| 08/05/2009 | CN101498054A Method for preparing large size yttrium system block material with YbBCO as solder by brazing method |
| 08/05/2009 | CN101498053A Electrochemical modification method for silicon face biology performance |
| 08/05/2009 | CN101498052A Grammite raphioid fibre crystal-nano calcium carbonate micro-nano composite powder material and production method |
| 08/05/2009 | CN100523314C Germanium monocrystal hot pressing deforming technique |
| 08/05/2009 | CN100523313C Silicon wafer and its heat treatment method |
| 08/04/2009 | US7569153 Fabrication method of liquid crystal display device |
| 07/30/2009 | WO2009092926A1 Method and related equipment for making thin poly- or mono-crystalline semiconductor substrates |
| 07/29/2009 | EP1268884B1 Method and device for making substrates |
| 07/29/2009 | CN100519831C Annealing single crystal chemical vapor depositon diamonds |
| 07/22/2009 | EP2080823A1 Group iii element nitride substrate, substrate with epitaxial layer, processes for producing these, and process for producing semiconductor element |
| 07/22/2009 | EP1538243B1 Diboride single crystal substrate, semiconductor device using this and its manufacturing method |
| 07/21/2009 | US7563319 Manufacturing method of silicon wafer |
| 07/16/2009 | US20090180948 making optical components or elements from CaF2 with parallel (100)- or (110)-oriented optic axes (principle direction) by tempering at elevated temperatures and suitably adapted cooling |
| 07/15/2009 | EP1272264B2 High temperature/high pressure colour change of diamond |
| 07/15/2009 | CN101481824A Method for cleaning polycrystal carbon head material |
| 07/15/2009 | CN100514560C Method of producing a plate-shaped structure, use of the method and plate-shaped structure thus produced |
| 07/09/2009 | WO2009086382A1 Cryogenic treatment process for diamond abrasive tools |
| 07/09/2009 | CA2646374A1 Polycrystalline ultra-hard compact constructions |
| 07/09/2009 | CA2646370A1 Polycrystalline ultra-hard constructions with multiple support members |
| 07/08/2009 | EP2077346A2 Method for measuring point defect distribution of silicon single crystal lingot |
| 07/08/2009 | CN100510200C Equipment for pulling crystal using direct pulling |
| 07/01/2009 | CN101471246A Method for manufacturing compound substrate of semiconductor |
| 06/30/2009 | US7553368 Process for manufacturing a gallium rich gallium nitride film |
| 06/30/2009 | CA2279786C A composition and method for selectively etching a silicon nitride film |
| 06/25/2009 | DE102007063202A1 Verfahren und Vorrichtung zur Behandlung von Silizium-Wafern Method and apparatus for treatment of silicon wafers |
| 06/25/2009 | DE102007063169A1 Verfahren und Anlage zum Bearbeiten bzw. Reinigen von Si-Blöcken Method and apparatus for processing or cleaning of Si-blocks |
| 06/18/2009 | DE112007001605T5 Zinkoxiddünnfilm vom p-Typ und Verfahren zur Ausbildung desselben The same p-type zinc oxide thin film and method of forming |
| 06/17/2009 | EP1668356B1 Method for controlling the treatment of a crystal by means of a liquid |
| 06/16/2009 | US7547359 Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride |
| 06/11/2009 | WO2008055067A3 Method and apparatus for forming a silicon wafer |
| 06/10/2009 | EP2068358A1 Process for transferring films |
| 06/10/2009 | DE10247017B4 SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist SiC single crystal, methods for producing an SiC single crystal, SiC wafer with an epitaxial film and method for manufacturing a SiC wafer having an epitaxial film |
| 06/10/2009 | DE102007058503A1 Verfahren zur nasschemischen Behandlung einer Halbleiterscheibe Process for wet-chemical treatment of a semiconductor wafer |
| 06/10/2009 | DE10048374B4 Verfahren zum großflächigen Verbinden von Verbindungshalbleitermaterialien Method for large-area bonding compound semiconductor materials |
| 06/10/2009 | CN101452894A Gaas semiconductor substrate , group III-v compound semiconductor device and method of manufacturing the same |
| 06/10/2009 | CN101451273A Electrochemical treatment method of single wall carbon nanotube, single wall carbon nanotube and device |
| 06/10/2009 | CN100499364C Piezoelectric vibration device |
| 06/10/2009 | CN100497764C Surface treatment method for n-type single crystal silicon wafer |
| 06/10/2009 | CN100497763C Surface treatment method for p-type single crystal silicon wafer |
| 06/09/2009 | US7544345 Magnesium oxide single crystal having controlled crystallinity and method for producing the same |
| 06/09/2009 | US7544248 Lithium tantalate substrate and method of manufacturing same |
| 06/09/2009 | US7544247 Lithium tantalate substrate and method of manufacturing same |
| 06/09/2009 | US7544246 Lithium tantalate substrate and method of manufacturing same |
| 06/04/2009 | US20090140390 GaAs SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND GROUP III-V COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 06/04/2009 | DE102007058002A1 Vorrichtung zum thermischen Behandeln von Halbleitersubstraten Apparatus for the thermal treatment of semiconductor substrates |
| 06/03/2009 | EP2065906A1 Process for moderating deformation |
| 06/02/2009 | CA2320218C Crystal ion-slicing of single-crystal films |
| 05/28/2009 | DE102008056195A1 Manufacturing epitaxial film of semiconductor component, by melting near-surface region of semiconductor substrate using laser radiation, and epitaxially depositing semiconductor layer on single-crystal recrystallized surface of substrate |
| 05/27/2009 | CN101440524A Plasma chemical reactor |
| 05/27/2009 | CN100492587C Substrate processing apparatus and substrate processing method |
| 05/26/2009 | US7537980 Method of manufacturing a stacked semiconductor device |
| 05/20/2009 | EP2061082A1 Semiconductor substrate for solid state imaging device, solid state imaging device, and method for manufacturing them |
| 05/20/2009 | EP2060663A1 Oxygen-doped N-type gallium nitride single crystal substrate |
| 05/20/2009 | DE102007056115A1 Verfahren zum Trennen von Einkristallen A method for separating single crystals |
| 05/20/2009 | CN100490126C Semiconductor wafer and process for producing a semiconductor wafer |
| 05/20/2009 | CN100489163C Method for raising purity of gold Nano bar |
| 05/19/2009 | US7534360 Method of making diamond product and diamond product |
| 05/14/2009 | DE102007054527A1 Neue Aufheizblöcke New Aufheizblöcke |
| 05/14/2009 | DE102007054526A1 Wärmetransferelement und Anlage zur thermischen Behandlung von Substraten Heat transfer element and plant for the thermal treatment of substrates |
| 05/13/2009 | EP2058419A1 Method for separating surface layer or growth layer of diamond |
| 05/13/2009 | EP2057304A2 Method and apparatus for forming a silicon wafer |
| 05/13/2009 | CN201236222Y Quick accurate pointing apparatus for sapphire wafer stick |
| 05/07/2009 | US20090114146 Method for Manufacturing Semiconductor Device and Substrate Processing Apparatus |
| 05/07/2009 | DE102005024118B4 Vorrichtung und Verfahren zur Reduktion von Partikeln bei der thermischen Behandlung rotierender Substrate Device and method for reduction of particles in the thermal treatment rotating substrates |
| 05/06/2009 | EP2055814A1 Semiconductor substrate for epitaxial growth and process for producing the same |
| 05/06/2009 | CN101423978A Ge doped vertical pulling silicon chip with high mechanical strength and preparation method thereof |
| 05/06/2009 | CN101423761A Silicon wafer reclamation process |
| 05/05/2009 | US7527704 Forming a SiO2 layer on a silicon substrate; applying a heat-curable conductive adhesive layer; laminating the single crystal plate on the adhesive; heat curing; and polishing, polarizing and etching the crystal plate; fabrication of many electric or electronic devices including a microactuator |
| 04/30/2009 | US20090108407 Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 04/29/2009 | CN100483739C Semi-insulating silicon carbide without vanadium domination |
| 04/28/2009 | US7524745 Method and device for doping, diffusion and oxidation of silicon wafers under reduced pressure |
| 04/28/2009 | CA2398632C Photonic bandgap materials based on silicon |
| 04/22/2009 | CN101413142A Annealing method for lithium aluminate crystal |
| 04/22/2009 | CN100481326C Method for manufacturing compound substrate of semiconductor |
| 04/16/2009 | WO2009048494A1 Method of chemical treatment of porous silicon surfaces |
| 04/16/2009 | WO2009047894A1 Method for producing group iii nitride crystal substrate, group iii nitride crystal substrate, and semiconductor device using group iii nitride crystal substrate |
| 04/15/2009 | EP2048267A1 Process for producing single-crystal substrate with off angle |
| 04/15/2009 | CN101410950A Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
| 04/14/2009 | US7517464 Making a thin film transistor panel of liquid crystal display by wet etching a multilayer metallic structure including a high melting metal film and an Al or alloy film using side etching technique with a photoresist mask; hot water washing to form a protective oxide film and dry etching using the mask |
| 04/14/2009 | CA2374337C Tellurium-containing nanocrystalline materials |
| 04/08/2009 | EP2045835A1 Method for reducing dislocation in group iii nitride crystal and substrate for epitaxial growth |
| 04/08/2009 | EP1972002B1 Simplified method of producing an epitaxially grown structure |
| 04/08/2009 | CN100477089C Crystal growing method for single-crystal gallium nitride |
| 04/02/2009 | DE102007044787A1 Verfahren zum Reinigen einer Halbleiterscheibe A method for cleaning a semiconductor wafer |
| 04/02/2009 | DE102005045339B4 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 04/02/2009 | DE102005045338B4 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 04/01/2009 | CN100474523C Method for etching silicon carbide single crystal |
| 04/01/2009 | CN100473749C Heat treatment method for monocrystalline or directionally solidified structural components |
| 03/26/2009 | WO2008092421A3 Optical cleaning of crystals |
| 03/25/2009 | EP2039733A1 Method of surface treatment of group III nitride crystal film, group III nitride crystal substrate, group III nitride crystal substrate with epitaxial layer, and semiconductor device |