Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
02/2010
02/24/2010CN101654809A Tank-type crystalline silicon wet-method etching equipment
02/23/2010US7667298 Oxygen-doped n-type gallium nitride freestanding single crystal substrate
02/23/2010CA2361397C Process for drying protein crystals
02/18/2010WO2010019173A1 Wavelength conversion devices and fabrication methods for the same
02/17/2010CN101649492A Silicon wafer with impurity capture zone and method for manufacturing same
02/16/2010US7662427 organic films can be chemical vapor deposited on all surfaces of the substrate provided with the scintillator, and the substrate can easily be taken up from the turntable after the organic films of polyxylene are deposited; waterproof coating
02/11/2010WO2010016586A1 Method for manufacturing semiconductor wafer
02/11/2010WO2010016257A1 Sharpened diamond needle, cantilever using the same for scanning-probe microscope, photomask-correcting probe, and electron beam source
02/11/2010US20100033806 Wavelength Converter Manufacturing Method and Wavelength Converter
02/10/2010CN101643940A Manufacturing method of hexagonal silicon slice
02/04/2010WO2010014657A2 Passivation of aluminum nitride substrates
02/03/2010CN201395649Y Quartz wafer glue melting machine
02/03/2010CN101638807A Silicon wafer, method for manufacturing the same and method for heat-treating the same
02/03/2010CN101638806A Method for manufacturing silicon wafer
02/03/2010CN100587132C Method for doping oxygen to gallium nitride crystal and oxygen-doped n-type gallium nitride single crystal substrate
02/02/2010US7655376 Multibeam interference; pyrolysis; chemical vapor deposition
02/02/2010US7655197 III-V nitride substrate boule and method of making and using the same
01/2010
01/28/2010US20100021373 Lithium tantalate substrate and process for its manufacture
01/27/2010CN101634046A Method for preparing single crystal silicon velvet surface
01/21/2010DE102008033548A1 Optimizing division of crystalline starting body in defect-poor region, comprises determining position of crystal axes and three-dimensional shape of the body, and fixing useful volume by determining location of crystal defects in the body
01/20/2010CN201386145Y Monocrystalline silicon rod splicing device
01/14/2010DE10147761B4 Verfahren zum Herstellen von Siliciumwafern A method for producing silicon wafers
01/12/2010US7646038 Method of fabricating heteroepitaxial microstructures
01/07/2010WO2010001518A1 Silicon single crystal wafer, process for producing silicon single crystal wafer, and method for evaluating silicon single crystal wafer
01/07/2010DE60123591T3 Hochtemperatur/hochdruck-farbeveränderng von diamanten High-temperature / high-pressure farbeveränderng of diamonds
01/07/2010DE102008061519A1 Method for producing semiconductor disc made silicon with internal getter, comprises heating the disc by rapid thermal annealing at a target temperature, holding the disc at the target temperature for five seconds and cooling the disc
12/2009
12/31/2009US20090321884 Method of fabricating an epitaxially grown layer
12/31/2009DE102008030826A1 Drahtsägevorrichtung A wire saw
12/30/2009EP2137761A1 Method of depositing materials on a non-planar surface
12/30/2009CN101613885A ZnGeP2 crystal corrosive and corrosion method
12/30/2009CN101613884A Polycrystalline silicon fuzzing process by acid method
12/23/2009EP2135977A2 Diamond composite substrate and a method for manufacturing same
12/23/2009CN101609794A Apparatus and method of temperature conrol during cleaving processes of thick film materials
12/23/2009CN101608342A Method for processing lithium niobate or lithium tantalate wafer
12/17/2009WO2009151160A1 Method for manufacturing the color controlled sappire
12/17/2009WO2009118353A3 Metallic nanocrystal encapsulation
12/17/2009US20090311847 Method for producing a semiconductor component
12/17/2009DE102009025178A1 Halbleiterbearbeitungsvorrichtung mit verbesserten thermischen Eigenschaften und Verfahren, um diese bereitzustellen Semiconductor processing apparatus with improved thermal properties and methods to provide these
12/16/2009EP2133450A1 Substrate for epitaxial growth and method for producing nitride compound semiconductor single crystal
12/16/2009CN100570019C Method for preparing high water soluble nano carbon tube grafted by super branched polymer
12/15/2009US7632349 Silicon wafer surface defect evaluation method
12/10/2009US20090301564 Upon excitation, one carrier confined to core and other carrier confined to overcoating; band gaps; photovoltaic devices, photoconductors
12/10/2009DE102008026784A1 Epitaxierte Siliciumscheibe mit <110>-Kristallorientierung und Verfahren zu ihrer Herstellung Epitaxial silicon wafer with <110> crystal orientation and process for their preparation
12/09/2009CN201358323Y Device used for wafer frequency etching
12/09/2009CN100567598C Germanium monocrystal hot pressing deforming device
12/09/2009CN100567592C Diamond composite substrate and process for producing the same
12/08/2009US7628853 Lithium tantalate substrate and process for its manufacture
12/03/2009CA2666237A1 Apparatus for converting electrical energy for conductively heating semiconductor material in rod form
12/02/2009CN101591812A Production technology for brazing diamond polycrystal and used mold thereof
12/02/2009CN101591804A Method and equipment for high-temperature liquid phase heating crystallization
12/02/2009CN100565820C Silicon wafer and method for producing same
11/2009
11/26/2009WO2009142284A1 Method for production of molded fluoride crystal article, optical member produced by the method, and optical device and ultraviolet ray washing device each comprising the optical member
11/26/2009US20090291287 Coloured diamond
11/18/2009CN201347468Y Driving system of quartz crystal wafer corrosion machine
11/18/2009CN101580965A Rapid-annealing method for growing large-size sapphire single-crystal with SAPMAC method
11/18/2009CN100561677C Wafer surface planarization method
11/17/2009US7618830 Rapid thermal processing apparatus and methods
11/12/2009WO2009136100A1 Method for transferring a thin layer by proton exchange
11/12/2009US20090277376 Method for producing an epitaxially coated semiconductor wafer
11/11/2009EP2114583A2 Optical cleaning of crystals
11/05/2009DE102008021643A1 Detecting defects on surface of semiconductor wafer, comprises mechanically processing the surface of the wafer, and removing a damaged layer, which occurs during mechanical processing, by etching the wafer to produce reflecting surface
11/04/2009EP2113938A2 Group III nitride crystal and method for surface treatment thereof, Group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereof
11/03/2009CA2376564C Semi-insulating silicon carbide without vanadium domination
10/2009
10/28/2009CN101565857A Method of thermally bonding single-end growing type composite crystal into double-end growing type composite crystal
10/28/2009CN101565856A Method for preparing organic silicon dampproof protection film on surface of borate crystal
10/27/2009CA2436001C Method of forming a silicon dioxide film
10/22/2009WO2009128224A1 Process for producing crystalline silicon carbide substrate
10/22/2009US20090261815 Stimulus Responsive Nanoparticles
10/21/2009CN100552892C Method for improving thin thermal oxidation film
10/20/2009CA2412855C Thick single crystal diamond layer method for making it and gemstones produced from the layer
10/15/2009US20090258255 Method for Producing Diamond Having Acicular Projection Array Structure on Surface thereof, Diamond Material, Electrode and Electronic Device
10/15/2009US20090256162 Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals
10/14/2009CN201326035Y Silicon rod glue jointing machine
10/14/2009CN101555629A Preparation method of self-assembled sulfonic acid group silane-titanium dioxide composite film on monocrystalline silicon substrate surface
10/14/2009CN101555627A Laser peeling method of gallium nitride-based epitaxial film
10/14/2009CN101555619A Preparation method of controllable yttrium silicate nano-rod
10/13/2009US7601441 single polytype single crystal silicon carbide wafer, diameter greater than 3 inches and less than 5 inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm-2, combined concentration of shallow level dopants less than 5E16 cm-3
10/13/2009US7601217 Method of fabricating an epitaxially grown layer
10/08/2009WO2009122648A1 Silicon single crystal wafer, method for fabricating silicon single crystal or method for fabricating silicon single crystal wafer, and semiconductor device
10/07/2009CN101550604A Rod sticky device of silicon single crystal rod
10/07/2009CN101550603A Rod spelling device of silicon single crystal rod
10/07/2009CN100547122C Vacancy-dominated, defect-free silicon
10/01/2009WO2009119411A1 Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same
10/01/2009WO2009118353A2 Metallic nanocrystal encapsulation
09/2009
09/30/2009CN101546791A Method for preparing CuInS* ultrathin membrane and prepared CuInS* ultrathin membrane
09/30/2009CN101545143A Annealing method for improving luminous efficiency of cerium-doped yttrium aluminum garnet crystal
09/30/2009CN101545142A Method for preparing Si3N4 composite film on surface of monocrystalline silicon chip
09/17/2009US20090233419 Optical device manufacturing method
09/16/2009EP2100989A1 Method for preparing substrate having monocrystalline film
09/16/2009EP2100325A1 Water-based polishing slurry for polishing silicon carbide single crystal substrate, and polishing method for the same
09/16/2009CN101533801A Optical device manufacturing method
09/16/2009CN101532180A Method for frequency corrosion of wafers and equipment thereof
09/16/2009CN101532179A Method for manufacturing silicon wafer on insulator
09/16/2009CN101532175A Method for the annealing preparation of tantalum scandium acid plumbum-based ferroelectric film by two step method
09/15/2009US7588998 Method for producing a semiconductor element
09/10/2009DE102008012333A1 Vorrichtung zum thermischen Behandeln von scheibenförmigen Substraten An apparatus for the thermal treatment of disk-shaped substrates
09/10/2009DE102007050483A1 Mischung aus einem thixotropen Dispersionsmedium sowie abrasiv wirkenden Körnern als Schleifmittel Mixture of a thixotropic dispersion medium and abrasive grains as an abrasive
09/09/2009EP2098620A1 Method of manufacturing silicon substrate
09/03/2009WO2009108700A1 Method for producing group iii nitride wafers and group iii nitride wafers
08/2009
08/26/2009EP2093312A1 Method of manufacturing group III nitride crystal
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