Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009) |
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02/24/2010 | CN101654809A Tank-type crystalline silicon wet-method etching equipment |
02/23/2010 | US7667298 Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
02/23/2010 | CA2361397C Process for drying protein crystals |
02/18/2010 | WO2010019173A1 Wavelength conversion devices and fabrication methods for the same |
02/17/2010 | CN101649492A Silicon wafer with impurity capture zone and method for manufacturing same |
02/16/2010 | US7662427 organic films can be chemical vapor deposited on all surfaces of the substrate provided with the scintillator, and the substrate can easily be taken up from the turntable after the organic films of polyxylene are deposited; waterproof coating |
02/11/2010 | WO2010016586A1 Method for manufacturing semiconductor wafer |
02/11/2010 | WO2010016257A1 Sharpened diamond needle, cantilever using the same for scanning-probe microscope, photomask-correcting probe, and electron beam source |
02/11/2010 | US20100033806 Wavelength Converter Manufacturing Method and Wavelength Converter |
02/10/2010 | CN101643940A Manufacturing method of hexagonal silicon slice |
02/04/2010 | WO2010014657A2 Passivation of aluminum nitride substrates |
02/03/2010 | CN201395649Y Quartz wafer glue melting machine |
02/03/2010 | CN101638807A Silicon wafer, method for manufacturing the same and method for heat-treating the same |
02/03/2010 | CN101638806A Method for manufacturing silicon wafer |
02/03/2010 | CN100587132C Method for doping oxygen to gallium nitride crystal and oxygen-doped n-type gallium nitride single crystal substrate |
02/02/2010 | US7655376 Multibeam interference; pyrolysis; chemical vapor deposition |
02/02/2010 | US7655197 III-V nitride substrate boule and method of making and using the same |
01/28/2010 | US20100021373 Lithium tantalate substrate and process for its manufacture |
01/27/2010 | CN101634046A Method for preparing single crystal silicon velvet surface |
01/21/2010 | DE102008033548A1 Optimizing division of crystalline starting body in defect-poor region, comprises determining position of crystal axes and three-dimensional shape of the body, and fixing useful volume by determining location of crystal defects in the body |
01/20/2010 | CN201386145Y Monocrystalline silicon rod splicing device |
01/14/2010 | DE10147761B4 Verfahren zum Herstellen von Siliciumwafern A method for producing silicon wafers |
01/12/2010 | US7646038 Method of fabricating heteroepitaxial microstructures |
01/07/2010 | WO2010001518A1 Silicon single crystal wafer, process for producing silicon single crystal wafer, and method for evaluating silicon single crystal wafer |
01/07/2010 | DE60123591T3 Hochtemperatur/hochdruck-farbeveränderng von diamanten High-temperature / high-pressure farbeveränderng of diamonds |
01/07/2010 | DE102008061519A1 Method for producing semiconductor disc made silicon with internal getter, comprises heating the disc by rapid thermal annealing at a target temperature, holding the disc at the target temperature for five seconds and cooling the disc |
12/31/2009 | US20090321884 Method of fabricating an epitaxially grown layer |
12/31/2009 | DE102008030826A1 Drahtsägevorrichtung A wire saw |
12/30/2009 | EP2137761A1 Method of depositing materials on a non-planar surface |
12/30/2009 | CN101613885A ZnGeP2 crystal corrosive and corrosion method |
12/30/2009 | CN101613884A Polycrystalline silicon fuzzing process by acid method |
12/23/2009 | EP2135977A2 Diamond composite substrate and a method for manufacturing same |
12/23/2009 | CN101609794A Apparatus and method of temperature conrol during cleaving processes of thick film materials |
12/23/2009 | CN101608342A Method for processing lithium niobate or lithium tantalate wafer |
12/17/2009 | WO2009151160A1 Method for manufacturing the color controlled sappire |
12/17/2009 | WO2009118353A3 Metallic nanocrystal encapsulation |
12/17/2009 | US20090311847 Method for producing a semiconductor component |
12/17/2009 | DE102009025178A1 Halbleiterbearbeitungsvorrichtung mit verbesserten thermischen Eigenschaften und Verfahren, um diese bereitzustellen Semiconductor processing apparatus with improved thermal properties and methods to provide these |
12/16/2009 | EP2133450A1 Substrate for epitaxial growth and method for producing nitride compound semiconductor single crystal |
12/16/2009 | CN100570019C Method for preparing high water soluble nano carbon tube grafted by super branched polymer |
12/15/2009 | US7632349 Silicon wafer surface defect evaluation method |
12/10/2009 | US20090301564 Upon excitation, one carrier confined to core and other carrier confined to overcoating; band gaps; photovoltaic devices, photoconductors |
12/10/2009 | DE102008026784A1 Epitaxierte Siliciumscheibe mit <110>-Kristallorientierung und Verfahren zu ihrer Herstellung Epitaxial silicon wafer with <110> crystal orientation and process for their preparation |
12/09/2009 | CN201358323Y Device used for wafer frequency etching |
12/09/2009 | CN100567598C Germanium monocrystal hot pressing deforming device |
12/09/2009 | CN100567592C Diamond composite substrate and process for producing the same |
12/08/2009 | US7628853 Lithium tantalate substrate and process for its manufacture |
12/03/2009 | CA2666237A1 Apparatus for converting electrical energy for conductively heating semiconductor material in rod form |
12/02/2009 | CN101591812A Production technology for brazing diamond polycrystal and used mold thereof |
12/02/2009 | CN101591804A Method and equipment for high-temperature liquid phase heating crystallization |
12/02/2009 | CN100565820C Silicon wafer and method for producing same |
11/26/2009 | WO2009142284A1 Method for production of molded fluoride crystal article, optical member produced by the method, and optical device and ultraviolet ray washing device each comprising the optical member |
11/26/2009 | US20090291287 Coloured diamond |
11/18/2009 | CN201347468Y Driving system of quartz crystal wafer corrosion machine |
11/18/2009 | CN101580965A Rapid-annealing method for growing large-size sapphire single-crystal with SAPMAC method |
11/18/2009 | CN100561677C Wafer surface planarization method |
11/17/2009 | US7618830 Rapid thermal processing apparatus and methods |
11/12/2009 | WO2009136100A1 Method for transferring a thin layer by proton exchange |
11/12/2009 | US20090277376 Method for producing an epitaxially coated semiconductor wafer |
11/11/2009 | EP2114583A2 Optical cleaning of crystals |
11/05/2009 | DE102008021643A1 Detecting defects on surface of semiconductor wafer, comprises mechanically processing the surface of the wafer, and removing a damaged layer, which occurs during mechanical processing, by etching the wafer to produce reflecting surface |
11/04/2009 | EP2113938A2 Group III nitride crystal and method for surface treatment thereof, Group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereof |
11/03/2009 | CA2376564C Semi-insulating silicon carbide without vanadium domination |
10/28/2009 | CN101565857A Method of thermally bonding single-end growing type composite crystal into double-end growing type composite crystal |
10/28/2009 | CN101565856A Method for preparing organic silicon dampproof protection film on surface of borate crystal |
10/27/2009 | CA2436001C Method of forming a silicon dioxide film |
10/22/2009 | WO2009128224A1 Process for producing crystalline silicon carbide substrate |
10/22/2009 | US20090261815 Stimulus Responsive Nanoparticles |
10/21/2009 | CN100552892C Method for improving thin thermal oxidation film |
10/20/2009 | CA2412855C Thick single crystal diamond layer method for making it and gemstones produced from the layer |
10/15/2009 | US20090258255 Method for Producing Diamond Having Acicular Projection Array Structure on Surface thereof, Diamond Material, Electrode and Electronic Device |
10/15/2009 | US20090256162 Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals |
10/14/2009 | CN201326035Y Silicon rod glue jointing machine |
10/14/2009 | CN101555629A Preparation method of self-assembled sulfonic acid group silane-titanium dioxide composite film on monocrystalline silicon substrate surface |
10/14/2009 | CN101555627A Laser peeling method of gallium nitride-based epitaxial film |
10/14/2009 | CN101555619A Preparation method of controllable yttrium silicate nano-rod |
10/13/2009 | US7601441 single polytype single crystal silicon carbide wafer, diameter greater than 3 inches and less than 5 inches, resistivity greater than 10,000 ohm-cm, a micropipe density less than 200 cm-2, combined concentration of shallow level dopants less than 5E16 cm-3 |
10/13/2009 | US7601217 Method of fabricating an epitaxially grown layer |
10/08/2009 | WO2009122648A1 Silicon single crystal wafer, method for fabricating silicon single crystal or method for fabricating silicon single crystal wafer, and semiconductor device |
10/07/2009 | CN101550604A Rod sticky device of silicon single crystal rod |
10/07/2009 | CN101550603A Rod spelling device of silicon single crystal rod |
10/07/2009 | CN100547122C Vacancy-dominated, defect-free silicon |
10/01/2009 | WO2009119411A1 Process for producing zno single crystal, self-supporting zno single-crystal wafer obtained by the same, self-supporting wafer of mg-containing zno mixed single crystal, and process for producing mg-containing zno mixed single crystal for use in the same |
10/01/2009 | WO2009118353A2 Metallic nanocrystal encapsulation |
09/30/2009 | CN101546791A Method for preparing CuInS* ultrathin membrane and prepared CuInS* ultrathin membrane |
09/30/2009 | CN101545143A Annealing method for improving luminous efficiency of cerium-doped yttrium aluminum garnet crystal |
09/30/2009 | CN101545142A Method for preparing Si3N4 composite film on surface of monocrystalline silicon chip |
09/17/2009 | US20090233419 Optical device manufacturing method |
09/16/2009 | EP2100989A1 Method for preparing substrate having monocrystalline film |
09/16/2009 | EP2100325A1 Water-based polishing slurry for polishing silicon carbide single crystal substrate, and polishing method for the same |
09/16/2009 | CN101533801A Optical device manufacturing method |
09/16/2009 | CN101532180A Method for frequency corrosion of wafers and equipment thereof |
09/16/2009 | CN101532179A Method for manufacturing silicon wafer on insulator |
09/16/2009 | CN101532175A Method for the annealing preparation of tantalum scandium acid plumbum-based ferroelectric film by two step method |
09/15/2009 | US7588998 Method for producing a semiconductor element |
09/10/2009 | DE102008012333A1 Vorrichtung zum thermischen Behandeln von scheibenförmigen Substraten An apparatus for the thermal treatment of disk-shaped substrates |
09/10/2009 | DE102007050483A1 Mischung aus einem thixotropen Dispersionsmedium sowie abrasiv wirkenden Körnern als Schleifmittel Mixture of a thixotropic dispersion medium and abrasive grains as an abrasive |
09/09/2009 | EP2098620A1 Method of manufacturing silicon substrate |
09/03/2009 | WO2009108700A1 Method for producing group iii nitride wafers and group iii nitride wafers |
08/26/2009 | EP2093312A1 Method of manufacturing group III nitride crystal |