Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
07/2010
07/13/2010CA2426105C Method of self-assembly and optical applications of crystalline colloidal patterns on substrates
07/07/2010EP2204479A2 AlGaInN and AlN substrates and method for cleaning them
07/07/2010EP2204478A2 AlGaInN and AlN substrates and method for cleaning them
07/07/2010EP2204476A2 Silicon wafer and method of manufacturing the same
07/07/2010CN101768777A Silicon wafer and method of manufacturing the same
07/07/2010CN101767778A BaCa4Se7 compound, BaCa4Se7 nonlinear optical crystal, preparation method and application
07/06/2010US7749865 Method for producing semiconductor wafers and a system for determining a cut position in a semiconductor ingot
07/01/2010US20100166636 Large diamond crystal substrates and methods for producing the same
07/01/2010US20100163751 Scintillator panel
06/2010
06/30/2010EP1817445B1 Method for making a dismountable substrate
06/30/2010EP1483782B1 Production method of sic monitor wafer
06/30/2010CN201517142U Gemstone enhancement bracket
06/30/2010CN101764054A Compound semiconductor epi-wafer and preparation method thereof
06/30/2010CN101760774A Post-heater for reduction of internal thermal stress of crystal grown in Czochralski method
06/30/2010CN101760741A Device for treating multiple chemicals in common cavity
06/30/2010CN101760138A Polishing solution for chemically mechanical polishing single-crystal magnesium oxide substrate
06/24/2010WO2010069784A1 Melting/solidification furnace with variable heat exchange via the side walls
06/24/2010CA2743543A1 Four de fusion-solidification comportant une modulation des echanges thermiques par les parois laterales
06/23/2010EP2199435A1 Annealed wafer and method for producing annealed wafer
06/23/2010CN1714459B Method for producing a semiconductor element
06/23/2010CN101748492A Apparatus and method for washing polycrystalline silicon
06/23/2010CN101748491A Annealed wafer and method for producing annealed wafer
06/23/2010CN101748490A Method for preparing Co3O4 composite film on surface of single crystal silicon
06/17/2010WO2010067794A1 Method for manufacturing piezoelectric composite substrate and method for manufacturing piezoelectric element
06/16/2010EP1327617B1 Method for joining
06/16/2010CN201506848U Polycrystalline silicon rod and connecting component
06/16/2010CN101736405A Method for improving key size evenness of polysilicon film
06/16/2010CN101016651B Annealed wafer and manufacturing method of annealed wafer
06/15/2010US7738071 Method of forming fine pattern, liquid crystal device having a fine pattern and fabricating method thereof
06/10/2010WO2010063636A1 Ingot formed from basic ingots, wafer made from said ingot, and associated method
06/09/2010CN1942610B Ultrahard diamonds and method of making thereof
06/09/2010CN101728249A Method for preparing single crystal transition layer of epitaxial compound semiconductor material on silicon chip
06/09/2010CN101724911A Surface heat treatment process used before measuring electrical resistivity of P-type silicon epitaxial slice
06/09/2010CN101724910A Method for eliminating surface defects of GaN thick film material
06/09/2010CN101140868B Epitaxial wafer and method of producing same
06/02/2010CN101312165B A1N substrate and cleaning method for the same
05/2010
05/27/2010WO2010059907A1 Laser assisted frit sealing of high cte glasses and the resulting sealed glass package
05/27/2010US20100126959 Ink composition for roll printing process and method of fabricating pattern on substrate using the same
05/26/2010EP1500722B1 Functional devices using single crystal material having high density dislocations arranged one-dimensionally in straight line form and method for their preparation
05/26/2010CN101713100A Method and device for reducing internal stress of single crystal rod
05/26/2010CN101713098A Silicon wafer and fabrication method thereof
05/26/2010CN101094940B Magnesium oxide single crystal having controlled crystallinity and method for preparation thereof, and substrate using said single crystal
05/19/2010EP2185480A1 Method of chemical treatment of porous silicon surfaces
05/19/2010EP2185298A2 Cleaning method for duv optical elements to extend their lifetime
05/19/2010CN101225550B Method for improving wafer defect
05/18/2010US7718469 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
05/14/2010WO2010014657A3 Passivation of aluminum nitride substrates
05/12/2010CN1967776B Semiconductor processing system and vaporizer
05/12/2010CN1950549B Charge restraining method and apparatus for piezoelectric oxide single crystal
05/12/2010CN101705518A Bi-doped solonetz borate crystal and preparation method and application thereof
05/11/2010US7713511 working in the state of a substrate a lithium tantalate crystal grown by the Czochralski method is buried in a mixed powder of Al and Al2O3, followed by heat treatment; lithium tantalate having volume resistivity which has been controlled within the range of from 1010 to 1013 Omega cm.
05/11/2010US7713507 Tough diamonds and method of making thereof
05/05/2010EP2182100A2 High purity semi-insulating single crystal silicon carbide wafer
05/05/2010CN101701360A Dislocation etching solution and etching method of (100) germanium monocrystal
05/05/2010CN101701348A Coarsening solution for electroplating pretreatment on surface of semiconductor N\P type cooling wafer and related electroplating pretreatment process
04/2010
04/29/2010US20100102330 Nitride semiconductor device having oxygen-doped n-type gallium nitride freestanding single crystal substrate
04/28/2010CN201442991U Dry etching apparatus for polysilicon
04/28/2010CN1662448B Process for manufacturing a gallium rich gallium nitride film
04/27/2010US7704769 Optical device manufacturing method
04/21/2010CN101696516A Surface processing method of washing-free solar germanium substrate
04/21/2010CN101298698B Method for surface in situ synthesis of conductive polyaniline PANi by using four acicular type zinc oxide crystal whisker T-ZnOw
04/15/2010DE102006010273B4 Verfahren zur Herstellung einer verspannten Schicht auf einem spannungskompensierten Schichtstapel mit geringer Defektdichte, Schichtstapel und dessen Verwendung A process for producing a strained layer on a voltage compensated layer stack having a low defect density, layer stack and the use thereof
04/14/2010EP2175480A1 Group iii nitride semiconductor substrate and method for cleaning the same
04/14/2010CN101694013A Corrosion method for increasing strength of solar sige substrate sheets
04/14/2010CN101694012A Wet etching method of barium-strontium titanate and bismuth zinc niobate composite films
04/08/2010DE102006022093B4 Verfahren und Vorrichtung zur Behandlung einer Halbleiterscheibe durch Ätzen Method and apparatus for treating a semiconductor wafer by etching,
04/07/2010EP2171134A1 Fabrication of sic substrates with low warp and bow
04/07/2010EP2171133A1 Use of acid washing to provide purified silicon crystals
04/07/2010CN1681976B 单晶金刚石 Single crystal diamond
04/07/2010CN101691660A Additive for preparing monocrystalline silicon suede
04/06/2010USRE41189 Method of making enhanced CVD diamond
04/03/2010CA2678910A1 Diamond bonded construction with thermally stable region
03/2010
03/31/2010EP2167709A1 Assemblies of anisotropic nanoparticles
03/31/2010CN101687277A Method for joining silicon base materials, liquid droplet delivery head, liquid droplet delivery apparatus, and electronic device
03/31/2010CN101687276A Method for joining silicon base materials, liquid droplet delivery head, liquid droplet delivery apparatus, and electronic device
03/25/2010WO2010033575A2 Abrasive particles having a unique morphology
03/25/2010CA2736805A1 Abrasive particles having a unique morphology
03/24/2010CN100595351C Interstitial atoms based silicon with low defect density
03/18/2010WO2010029277A1 Boron-doped diamond
03/18/2010US20100067087 Treatment of crystals for the prevention of optical damage
03/18/2010DE102008046854A1 Machining surfaces of substrates, which have first and second surface, comprises treating first surface of the substrate with etching medium, so that part of the first surface is removed, and applying leveling material on the first surface
03/17/2010CN101673785A Method for preparing reflection reduction film with surface embedded type porous silicon structure of silicon base solar battery
03/17/2010CN101671850A Mixed phosphate and caustic alkali solution for preparing monocrystal silicon textured surfaces
03/17/2010CN101671849A Preparation method of surface phosphate silane-CdSe composite film of monocrystalline silicon piece
03/17/2010CN101671843A Semiconductor wafer composed of monocrystalline silicon and method for producing
03/17/2010CN101671842A Method for growing Na-N co-doping p-type ZnO crystal film by annealing
03/16/2010US7678409 Deposition of layers on substrates
03/11/2010WO2010027044A1 Substrate, substrate provided with epitaxial layer and methods for manufacturing the substrates
03/11/2010DE102008046617A1 Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung Semiconductor wafer made of monocrystalline silicon and methods for their preparation
03/04/2010WO2010024285A1 Method for manufacturing nitride substrate, and nitride substrate
03/04/2010WO2009017634A3 Cleaning method for duv optical elements to extend their lifetime
03/03/2010EP1110237B1 Device and method for the high-frequency etching of a substrate using a plasma etching installation and device and method for igniting a plasma and for pulsing the plasma output or adjusting the same upwards
03/03/2010CN201417740Y Rectangular etching ion gun
03/03/2010CN101660210A Silicon core cleaning technique
03/03/2010CN101660209A Method and device for reducing polysilicon cast ingot stress
03/03/2010CN101660208A Method for reducing polysilicon cast ingot stress
02/2010
02/25/2010WO2010020216A1 Methods for joining a monocrystalline part to a polycrystalline part by means of an adapter piece made of polycrystalline material
02/25/2010US20100047519 Plasma etching of diamond surfaces
02/24/2010CN201414114Y Automatic temperature control corrosion machine for piezoelectric quartz crystal frequency pieces
02/24/2010CN101654810A Method for preparing reflection-resisting layer on silicon slice
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