Patents for C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
12/2010
12/08/2010CN101906662A Preparation method of TiO2 nanotubes modified by silver nanoparticles with different particle diameters
12/08/2010CN101220513B Thermal treatment method for improving type N polycrystal Bi2Te3thermoelectricity capability
12/08/2010CN101019212B Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution
12/01/2010EP2256786A1 Process for producing monocrystal thin film and monocrystal thin film device
12/01/2010CN101899715A Plasma processing device and thimble lifting device thereof
12/01/2010CN101899714A Copper conjugating solution and using method thereof
12/01/2010CN101899708A Tetrapod-like zinc oxide/ferrite film material and preparation method thereof
12/01/2010CN101392409B Pulsed processing semiconductor heating methods using combinations of heating sources
11/2010
11/24/2010EP2253746A2 Coloured diamond
11/24/2010EP2252726A2 Method and system for improving surgical blades by the application of gas cluster ion beam technology and improved surgical blades
11/24/2010EP1537259B1 Method for altering the colour of a single crystal cvd diamond and diamond layer produced thereby
11/24/2010CN101892524A Process for deep-cold processing on crystalline silicon material
11/24/2010CN101213497B Reinforced micromechanical part
11/23/2010US7837969 making optical components or elements from CaF2 with parallel (100)- or (110)-oriented optic axes (principle direction) by tempering at elevated temperatures and suitably adapted cooling
11/23/2010US7837793 Method of manufacturing diamond substrates
11/18/2010US20100291769 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys
11/18/2010US20100289122 Iii-v nitride substrate boule and method of making and using the same
11/17/2010EP2251389A1 Nanowire ink
11/17/2010EP1537263B1 Semiconductor nanocrystal heterostructures
11/17/2010CN101886263A Blowing corrosion machine and method for corrosion and cleaning
11/17/2010CN101312164B Alxgayin1-x-yn substrate and cleaning method for the same, and AIN substrate and cleaning method for the same
11/17/2010CN101277782B Method of repairing a component with an oriented microstructure
11/16/2010US7833345 Treatment of crystals in order to avoid light-induced modifications of the refractive index
11/10/2010EP2248931A2 Free-standing and parting method for forming same
11/10/2010CN101880914A Method for preparing black silicon by plasma immersion ion implantation
11/10/2010CN101880913A Method for preparing lithium niobate thin-film materials
11/10/2010CN101498054B Method for preparing large size yttrium system block material with YbBCO as solder by brazing method
11/04/2010US20100275846 Plasma processing method, plasma processing apparatus, and computer recording medium
11/03/2010EP2245218A1 Method for producing group iii nitride wafers and group iii nitride wafers
11/03/2010CN101876088A Polycrystalline silicon texturing method
11/02/2010US7825405 Upon excitation, one carrier confined to core and other carrier confined to overcoating; band gaps; photovoltaic devices, photoconductors
10/2010
10/28/2010WO2010122821A1 Process for producing indium-phosphorus substrate, process for producing epitaxial wafer, indium-phosphorus substrate, and epitaxial wafer
10/27/2010CN101871126A Gadolinium gallate crystal and growth method thereof
10/20/2010EP1192647B1 Oxidation of silicon on germanium
10/20/2010CN101864599A Preparation method of suede of silicon wafer
10/20/2010CN101864595A Erbium-doped gadolinium lithium fluoride crystal and growth method thereof
10/20/2010CN101864594A Ingot casting method for quasi-monocrystalline silicon
10/20/2010CN101864592A Ferroelectric metal hetero-junction based memristor and preparation method thereof
10/20/2010CN101863679A Method for preparing lanthanum nickel oxide thin-film material
10/13/2010CN201605354U 一种用于硅片快速冷却过程的平行风流装置 Merry parallel device for a rapid cooling process silicon wafers
10/13/2010CN101858836A Chemical corrosion method of manganese doped gallium antimonide monocrystalline
10/07/2010US20100252914 Optical semiconductor device with a concentration of residual silicon
10/06/2010CN1973064B One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
10/06/2010CN101851776A Treatment method of silicon chip edge
10/05/2010US7807234 Applying plasma processing to a semiconductor silicon substrate by microwaving in the presence of a mixture of inert gas and oxygen and nitrogen free radicals; oxynitriding to produce an insulation film where nitrogen has a higher concentration near the surface than at the interface with silicon
09/2010
09/30/2010WO2010109873A1 Silicon wafer and method for manufacturing same
09/30/2010WO2010109853A1 Silicon wafer and method of manufacturing same
09/30/2010WO2010109750A1 Method for manufacturing sapphire substrate, and semiconductor device
09/29/2010EP2233615A2 Metal nano-objects, formed on semiconductor surfaces, and methods for making said nano-objects
09/29/2010CN201593076U Wafer rack
09/29/2010CN1914126B Method of incorporating a mark in CVD diamond
09/29/2010CN101381893B CdGeAs2 crystal etching agent and etching method
09/29/2010CN101158052B Alkaline etching solution for semiconductor wafer and alkaline etching method
09/28/2010US7803228 Process for producing high-resistance silicon wafers and process for producing epitaxial wafers and SOI wafers
09/22/2010EP2230334A1 MULTILAYER SUBSTRATE INCLUDING GaN LAYER, METHOD FOR MANUFACTURING THE MULTILAYER SUBSTRATE INCLUDING GAN LAYER, AND DEVICE
09/22/2010CN201586488U Five-speed-stage automatic integral mixing system
09/22/2010CN101838852A Method for preparing nano-silicon with high luminous performance by steam corrosion
09/22/2010CN101838851A Acid washing process of monocrystalline or polycrystalline silicon wafer
09/16/2010WO2010104403A1 Prevention of crack propagation in brittle materials
09/16/2010WO2010103869A1 Method for manufacturing single crystal optical lens
09/15/2010CN201579005U Automatic stepless speed regulating overall stirring system
09/15/2010CN1732557B Method for treating semiconductor material
09/15/2010CN101831713A Silicon chip cleaning and texturing slot
09/15/2010CN101831712A Crystal annealing device in growth furnace
09/15/2010CN101471246B Method for manufacturing compound substrate of semiconductor
09/15/2010CN101319347B Method for crystal surface self-organizing growth of fine-nano-structure with femtosecond laser
09/14/2010US7794542 Bulk single crystal gallium nitride and method of making same
09/08/2010EP2226412A1 Method for growing silicon single crystal and method for producing silicon wafer
09/08/2010CN101824654A Method for manufacturing black silicon material
09/08/2010CN101824653A Method for manufacturing black silicon material by scanning and irradiation of light source of broad-pulse laser
09/02/2010WO2010052704A3 Tubular nanostructures, processes of preparing same and devices made therefrom
09/02/2010DE102009010555A1 Verfahren zum Erkennen einer Fehllage einer Halbleiterscheibe während einer thermischen Behandlung A method for detecting an incorrect position of a semiconductor wafer during a thermal treatment
09/01/2010CN201567390U High-speed non-plasma silicon etching system
09/01/2010CN101818378A Velvet manufacturing solution of monocrystalline silicon additive
09/01/2010CN101341580B Method for the manufacture of substrates, in particular for the optical, electronic or optoelectronic areas, and the substrate obtained in accordance with the said method
08/2010
08/25/2010CN101369029B Method for producing photon crystal film for improving mechanical strength and solvent resistance
08/18/2010EP2218805A1 Crystallisation method with control of the grain's direction in the crystal
08/18/2010CN201553805U Cutting-torch preparing device for graphite single chips
08/18/2010CN101805929A Polycrystalline silicon surface wool manufacturing method
08/11/2010CN201545936U Groove-type crystalline silicon wet-method velvet manufacturing equipment
08/11/2010CN101802271A Use of acid washing to provide purified silicon crystals
08/10/2010US7771693 etching away by reactive ion etching using O2 and CF4, prior to single crystal growth, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing the work-affected layers caused by mechanical polishing, then growing a single crystal
08/05/2010DE102009044660A1 Lampe für schnelle thermische Bearbeitung Lamp for rapid thermal processing
08/04/2010EP1423259B1 parting method for forming free-standing (al,ga,in)n article
08/04/2010CN201538818U Water tank device of wet oxidation film etching equipment
08/04/2010CN101792927A Wafer heat treating method
08/04/2010CN101311344B Polysilicon film preparation with controllable crystal particle dimension and detection device
07/2010
07/29/2010WO2010084878A1 Electrically conductive gaas crystal, electrically conductive gaas crystal substrate, and processes for producing those materials
07/28/2010CN1908251B Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate
07/28/2010CN101787568A Preparation process of intrinsic gettering structure of germanium-doped and heavy phosphorus-doped straight pulling monocrystalline silicon wafer
07/28/2010CN101787567A New biological modification method of surface of crystalline silicon
07/22/2010WO2010082267A1 Inside reforming substrate for epitaxial growth; crystal film forming element, device, and bulk substrate produced using the same; and method for producing the same
07/22/2010US20100180814 Fabrication of sic substrates with low warp and bow
07/21/2010CN101368294B Surface finished zinc oxide nanometer stick array and preparation method thereof
07/21/2010CN101055847B Method of revealing crystalline defects in a bulk substrate
07/14/2010CN101775662A Etch-cleaning method for high purity polycrystalline silicon briquette
07/14/2010CN101775644A Manganese oxide epitaxial film with anisotropic magnetoresistivity and preparation method and application thereof
07/13/2010US7754286 Depositing any one of polysilicon, epitaxial silicon or amorphous silicon; silicon dioxide film is formed by a wet and thermal oxidation treatment; repeated process until it has a thickness for an optical waveguide
07/13/2010US7754180 Ultrahard diamonds and method of making thereof
07/13/2010US7754011 Method of manufacturing a calcium fluoride single crystal
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