| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 09/04/2001 | US6284556 Diamond surfaces |
| 09/04/2001 | US6284041 Process for growing a silicon single crystal |
| 09/04/2001 | US6284040 Process of stacking and melting polycrystalline silicon for high quality single crystal production |
| 09/04/2001 | US6284039 Epitaxial silicon wafers substantially free of grown-in defects |
| 08/30/2001 | WO2001063026A1 Method for producing silicon single crystal |
| 08/30/2001 | WO2001063025A1 Polycrystalline diamond thin film, photocathode and electron tube using it |
| 08/30/2001 | WO2001063022A2 Controlled neck growth process for single crystal silicon |
| 08/30/2001 | WO2001063021A1 Method for single crystal growth of perovskite oxides |
| 08/30/2001 | WO2001063020A1 Method and apparatus for growing low defect density silicon carbide and resulting material |
| 08/30/2001 | US20010017374 Semi-insulating silicon carbide without vanadium domination |
| 08/30/2001 | US20010017100 Method for stabilizing dendritic web crystal growth |
| 08/29/2001 | EP1128399A1 Magnetic garnet material and magnetooptical device using the same |
| 08/29/2001 | EP1127964A1 Floating/melting using dummy micro-gravitational field by magnetic force |
| 08/29/2001 | EP1127963A2 Process for producing a raw material powder to grow a single crystal and the single crystal |
| 08/29/2001 | EP1127962A1 Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer |
| 08/29/2001 | EP1127175A1 Process for preparing defect free silicon crystals which allows for variability in process conditions |
| 08/29/2001 | EP0852097B1 Electronic program guide schedule localization system and method |
| 08/29/2001 | CN1310861A Semiconductor thin film and thin film device |
| 08/29/2001 | CN1310349A Magnetic garnet material and photomagnetic device using the same material |
| 08/28/2001 | US6281171 MG-doped high-temperature superconductor having the superconducting anisotropy and method for producing the superconductor |
| 08/28/2001 | US6281099 Method for synthesizing single crystal AIN thin films of low resistivity n-type and low resistivity p-type |
| 08/28/2001 | US6281022 Multi-phase lead germanate film deposition method |
| 08/23/2001 | WO2001061081A1 Process for producing a silicon melt |
| 08/23/2001 | WO2001061070A1 Method and apparatus for chemical vapor deposition of polysilicon |
| 08/23/2001 | WO2001060945A2 Scintillator crystals, method for making same, use thereof |
| 08/23/2001 | WO2001060944A2 Scintillator crystals, method for making same, use thereof |
| 08/23/2001 | US20010015169 Method for growing SiC single crystals |
| 08/23/2001 | US20010015167 Method and apparatus for doping a melt with a dopant |
| 08/23/2001 | CA2398952A1 Scintillator crystals, method for making same, use thereof |
| 08/23/2001 | CA2398849A1 Scintillator crystals, method for making same, use thereof |
| 08/23/2001 | CA2386382A1 Method and apparatus for chemical vapor deposition of polysilicon |
| 08/22/2001 | EP1125009A1 Method and apparatus for accurately pulling a crystal |
| 08/22/2001 | CN1309776A Method of organic film deposition |
| 08/22/2001 | CN1309729A Method for growing SiC monocrystals |
| 08/22/2001 | CN1069935C Method for reducing formation of microtransistor defect in epitaxial growth of silicon carbide, and resulting silicon carbide structure |
| 08/21/2001 | US6278832 Scintillating substance and scintillating wave-guide element |
| 08/21/2001 | US6277500 Superalloy |
| 08/21/2001 | US6277193 Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device |
| 08/21/2001 | US6277192 Crystal pulling unit |
| 08/21/2001 | CA2198588C Formation of a metalorganic compound for growing epitaxial semiconductor layers |
| 08/16/2001 | WO2001059817A1 Method for treating a diamond surface and corresponding diamond surface |
| 08/16/2001 | WO2001059187A1 Production device for high-quality silicon single crystal |
| 08/16/2001 | US20010013311 Epitaxial compound structure and device comprising same |
| 08/16/2001 | EP1123993A2 Single crystal SiC and method of growing the same |
| 08/16/2001 | EP1123426A1 Continuous oxidation process for crystal pulling apparatus |
| 08/16/2001 | DE10055648A1 Siliziumwafer mit gesteuerter Störstellenverteilung, Verfahren zur Herstellung desselben und Czochralski-Ziehapparate zur Herstellung von Einkristall-Siliziumrohlingen Silicon wafer with a controlled impurity, method for producing the same and Czochralski pulling apparatus for producing single crystal silicon ingots |
| 08/16/2001 | CA2399588A1 Method for treating a diamond surface and corresponding diamond surface |
| 08/15/2001 | CN1308690A Method and device for producing at least one silicon carbide monocrystal |
| 08/14/2001 | US6274837 Method and apparatus for in-situ solid state doping of CVD diamonds and diamonds so made |
| 08/14/2001 | US6274234 Very long and highly stable atomic wires, method for making these wires, application in nano-electronics |
| 08/14/2001 | US6273948 Method of fabrication of highly resistive GaN bulk crystals |
| 08/14/2001 | US6273947 Method of preparing a compound semiconductor crystal |
| 08/14/2001 | US6273944 Silicon wafer for hydrogen heat treatment and method for manufacturing the same |
| 08/11/2001 | WO2001084608A1 Production method of iii nitride compound semiconductor substrate and semiconductor device |
| 08/09/2001 | WO2001057294A1 Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations |
| 08/09/2001 | WO2001057293A1 Single crystal growing device and production method of single crystal using the device and single crystal |
| 08/09/2001 | WO2000071787A3 Semi-insulating silicon carbide without vanadium domination |
| 08/09/2001 | US20010012547 Raw material for production of GaAs crystals |
| 08/09/2001 | US20010011748 Semiconductor thin film and thin film device |
| 08/09/2001 | US20010011519 Single crystal SiC and a method of growing the same |
| 08/08/2001 | EP1122795A2 High dielectric constant gate oxides for silicon-based devices |
| 08/08/2001 | EP1122341A1 Single crystal SiC |
| 08/08/2001 | EP1122291A2 Layered organic-inorganic perovskites having metal-deficient inorganic frameworks |
| 08/08/2001 | EP1121334A1 Three dimensionally periodic structural assemblies on nanometer and longer scales |
| 08/08/2001 | EP0972097B1 MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga1-x-yAlxInyN |
| 08/08/2001 | EP0763144B1 Production of carbon-coated barrier films with increased concentration of carbon with tetrahedral coordination |
| 08/08/2001 | CN1307654A Crystal puller for growing low defect density, self-interstitial dominated silicon |
| 08/08/2001 | CN1307653A Epitaxial silicon wafers substantially free of grown-in defects |
| 08/08/2001 | CN1307589A Seeding crystals for the preparation of peptides or proteins |
| 08/07/2001 | US6270587 Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same |
| 08/07/2001 | US6270574 Method of growing a buffer layer using molecular beam epitaxy |
| 08/07/2001 | US6270571 By depositing a material other than titanium on the surface of a base containing titanium and thermally treating in titanium-oxidation atmosphere; high crystallinity; whiskers; use in photoelectric transducers, photocatalytic devices |
| 08/07/2001 | US6270570 Fluoride crystal, optical article, and production method |
| 08/02/2001 | WO2001055485A1 Silicon wafer, method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer |
| 08/02/2001 | WO2001004388A3 Edge meniscus control of crystalline ribbon growth |
| 08/02/2001 | WO2000042621A3 Epitaxial thin films |
| 08/02/2001 | US20010010375 Gallium phosphide semiconductor configuration and production method |
| 08/02/2001 | US20010010202 Method of supplying silicon raw material, method of producing silicon single crystal, and poly-silicon |
| 08/02/2001 | US20010010112 Manufacturing method of semiconductor wafer, semiconductor manufacturing apparatus, and semiconductor device |
| 08/02/2001 | EP1145252A3 Epitaxial thin films |
| 08/01/2001 | EP1119654A1 Crystallization tray |
| 08/01/2001 | EP1119653A2 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 08/01/2001 | CN1306105A Process for preparing lithium gallate crystal |
| 08/01/2001 | CN1305952A Method for removing templat agent from synthetic zeolite |
| 07/31/2001 | US6267867 Coating a tungsten carbide base material substrate. |
| 07/31/2001 | US6267816 Method for single crystal growth |
| 07/31/2001 | US6267815 Method for pulling a single crystal |
| 07/26/2001 | US20010009341 Method for manufacturing a langasite single crystal substrate, a langasite single crystal substrate, and a piezoelectric device |
| 07/26/2001 | US20010009138 Used in chemical vapor deposition tools for making semiconductors |
| 07/26/2001 | DE10064002A1 Vielschicht-Dünnschichtstruktur, ferroelektrisches Dünnschichtelement und Verfahren zur Herstellung derselben Multilayer thin film structure, the ferroelectric thin-film element and process for producing same |
| 07/25/2001 | EP1118880A1 Method of organic film deposition |
| 07/25/2001 | EP1118697A2 Low defect density, vacancy dominated silicon |
| 07/25/2001 | CN1305639A Fabrication of gallium nitride semiconductor layers by lateral growth from treach sidewalls |
| 07/25/2001 | CN1305540A Process and apparatus for preparation of silicon crystals with preduced metal content |
| 07/25/2001 | CN1305024A Process for preparing monocrystal filament of zinc oxide directly from zinc sulfide |
| 07/24/2001 | US6265353 Device and method for producing a multilayered material |
| 07/24/2001 | US6265322 Differential growth between single crystal group iii-nitride material and polycrystalline group iii-nitride material; epitaxial process |
| 07/24/2001 | US6265289 The defect density of the lateral gallium nitride semiconductor layer may be further decreased by growing a second gallium nitride semiconductor layer from the lateral gallium nitride layer. |
| 07/24/2001 | US6265019 Segment variations |
| 07/24/2001 | US6264742 Single crystal processing by in-situ seed injection |