| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 04/18/2002 | WO2002030814A1 A process for the synthesis of nanotubes of transition metal dichalcogenides |
| 04/18/2002 | WO2002001608A3 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 04/18/2002 | WO2001068954A3 Axial gradient transport apparatus and process |
| 04/18/2002 | US20020045340 Method of manufacturing group iii-v compound semiconductor |
| 04/18/2002 | US20020045073 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 04/18/2002 | US20020045009 Method of chemically growing a thin film in a gas phase on a silicon semiconductor substrate |
| 04/18/2002 | US20020043208 Crystal growth method |
| 04/18/2002 | US20020043206 Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations |
| 04/18/2002 | CA2425757A1 Epitaxial oxide films via nitride conversion |
| 04/17/2002 | EP1197996A2 A III nitride epitaxial wafer and usage of the same |
| 04/17/2002 | EP1197995A2 A method for fabricating a III nitride film |
| 04/17/2002 | EP1196646A2 Dendrite thickness control system for growing silicon ribbon |
| 04/17/2002 | CN1345096A Method and device for manufacture of gallium phosphide luminous component |
| 04/17/2002 | CN1083077C Crucible fixing method and support base and base assembly equipment |
| 04/16/2002 | US6372981 Semiconductor substrate, solar cell using same, and fabrication methods thereof |
| 04/16/2002 | US6372040 Single crystal growth apparatus and single crystal growth method |
| 04/16/2002 | CA2258388C Surface processing of thin film cvd diamond coatings for improved resistive properties and integrated circuit packages incorporating processed coatings |
| 04/11/2002 | WO2001064975A8 Method and device for growing large-volume oriented monocrystals |
| 04/11/2002 | US20020041931 Method for growing thin films |
| 04/11/2002 | US20020040848 Method of smoothing diamond coating, and method of manufacturing diamond-coated body |
| 04/11/2002 | DE10064941A1 Gaseinlassorgan Gas inlet element |
| 04/11/2002 | DE10047929A1 Production of semiconductor and metal wafers used in the production of solar cells comprises solidifying a melt of a semiconductor, metal or a mixture of several semiconductors and/or metals on a moving substrate |
| 04/10/2002 | EP1195455A1 Silicon wafer, method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer |
| 04/10/2002 | EP1194619A1 Doped diamond |
| 04/10/2002 | EP1194618A1 Sublimation growth method for an sic monocrystal with growth-pressure heating |
| 04/10/2002 | CN1344336A Prodn. of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
| 04/10/2002 | CN1344335A Method and appts. for controlling diameter of silicon crystal in growth process |
| 04/10/2002 | CN1082572C Method for preparing molten silcon melt from polycrystalline silicon charge |
| 04/09/2002 | US6370288 Optical magnetic field sensor probe |
| 04/09/2002 | US6368407 Single crystal-manufacturing equipment and a method for manufacturing the same |
| 04/04/2002 | WO2002027778A1 Method of heat-treating silicon wafer |
| 04/04/2002 | WO2002027079A1 Crystal growth method |
| 04/04/2002 | WO2002027077A1 Method of manufacturing silicon monocrystal and device for manufacturing semiconductor monocrystal |
| 04/04/2002 | US20020039462 Optical magnetic field sensor probe |
| 04/04/2002 | US20020038892 Boride-based substrate for growing semiconducting layers thereon and a semiconductor devise using the same |
| 04/04/2002 | US20020038627 Apparatus for growing low defect density silicon carbide |
| 04/04/2002 | DE10044163A1 Elektrophoretisch nachverdichtete SiO2-Formkörper, Verfahren zu ihrer Herstellung und Verwendung Electrophoretically recompressed SiO2-shaped bodies, processes for their preparation and use |
| 04/03/2002 | EP1193332A1 Method for producing silicon single crystal |
| 04/03/2002 | EP1090167B1 Process and apparatus for preparation of silicon crystals with reduced metal content |
| 04/03/2002 | EP0972095B1 Crucible and method of preparation thereof |
| 04/03/2002 | CN1343265A Barium doping of molten silicon for use in crystal growing process |
| 04/03/2002 | CN1343264A Strontium doping of molten silicon for use in crystal growing process |
| 04/03/2002 | CN1342986A Manufacturing method for oxide superconductor material used for oxide superconductor and preparation method thereof |
| 04/02/2002 | US6365461 Method of manufacturing epitaxial wafer |
| 04/02/2002 | US6364947 Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same |
| 04/02/2002 | US6364946 Methods for growing large-volume single crystals from calcium fluoride and their uses |
| 03/28/2002 | WO2002025716A1 Method of producing silicon wafer and silicon wafer |
| 03/28/2002 | WO2002024985A1 Gas inlet mechanism for cvd-method and device |
| 03/28/2002 | US20020037249 Method of producing oxide whiskers, oxide whiskers, and photoelectric conversion apparatus |
| 03/28/2002 | US20020036281 Spin electronic material and fabrication method thereof |
| 03/28/2002 | DE10143761A1 Wafer used in the production of semiconductor devices comprises a region with a central axis, a region having no flow structure defect, a region with an oxidation-induced stacking fault region |
| 03/27/2002 | EP1191130A1 Saucer for escaped melt in apparatus for pulling up single crystal |
| 03/27/2002 | EP1190206A2 Tip structures, devices on their basis, and methods for their preparation |
| 03/27/2002 | EP1190123A1 Encapsulation of crystals via multilayer coatings |
| 03/27/2002 | EP1190122A1 Method and apparatus for epitaxially growing a material on a substrate |
| 03/27/2002 | EP1190120A1 Compound gas injection system and methods |
| 03/27/2002 | EP1099014B1 Method and device for producing at least one silicon carbide monocrystal |
| 03/27/2002 | EP1090166B1 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 03/27/2002 | EP0778838B1 Formation of a metalorganic compound for growing epitaxial metal or semiconductor layers |
| 03/26/2002 | US6360755 Method for processing semiconductor material |
| 03/21/2002 | WO2002022919A2 Forming a single crystal semiconductor film on a non-crystalline surface |
| 03/21/2002 | WO2002022917A2 Single crystals of lead magnesium niobate-lead titanate |
| 03/21/2002 | US20020034881 Selecting surface quality for surface of etched wafer and quantity of silicon to be removed from surface of wafer during the etching process; determining concentration of hydrofluoric acid in an aqueous etching solution; etching |
| 03/21/2002 | DE10045264A1 Verfahren zum Aufheizen eines Werkstückes, insbesondere eines optischen Elementes A method of heating a workpiece, in particular an optical element |
| 03/21/2002 | CA2421753A1 Single crystals of lead magnesium niobate-lead titanate |
| 03/20/2002 | EP1189285A1 Production method for bonding wafer and bonding wafer produced by this method |
| 03/20/2002 | EP1188545A2 Method for heating a work piece, in particular an optical element |
| 03/20/2002 | EP0950132A4 CaTiO 3? INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR |
| 03/20/2002 | EP0665981B1 Process for fabricating layered superlattice materials and electronic devices including same |
| 03/20/2002 | CN1340637A Method for using quasi-diamond to modify artificial crystal |
| 03/19/2002 | US6358867 Orientation independent oxidation of silicon |
| 03/14/2002 | WO2002021576A2 Organic nanoelectric conductors |
| 03/14/2002 | WO2002020882A1 Silicon sheet producing apparatus and solar cell comprising silicon sheet produced by the same |
| 03/14/2002 | WO2002020880A1 Production of low defect epitaxial films |
| 03/14/2002 | WO2002020879A1 Production method for composite oxide thin film and device therefor and composite oxide film produced thereby |
| 03/14/2002 | WO2002020424A1 Electrophoretically redensified sio2 moulded body, method for the production and use thereof |
| 03/14/2002 | WO2002020403A1 Ultracoarse, monorystalline tungsten carbide and method for producing the same, and hard metal produced therefrom |
| 03/14/2002 | US20020030042 Method for heating a workpiece |
| 03/14/2002 | US20020029738 Apparatus for pulling a single crystal |
| 03/14/2002 | US20020029737 Quartz glass crucible for pulling up silicon single crystal and production method therefor |
| 03/14/2002 | US20020029735 Method of and apparatus for growing ribbon of crystal |
| 03/14/2002 | US20020029734 Method for producing single |
| 03/14/2002 | DE10043792A1 Ultragrobes, einkristallines Wolframkarbid und Verfahren zu dessen Herstellung; Ultra-coarse, single-crystalline tungsten carbide, and process for its production; und daraus hergestelltes Hartmetall and it produced carbide |
| 03/14/2002 | DE10043601A1 Vorrichtung und Verfahren zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten Apparatus and method for depositing in particular crystalline layers on in particular crystalline substrates |
| 03/13/2002 | EP1187231A2 Method of preparing oxide superconductor |
| 03/13/2002 | EP1186687A2 Method of and apparatus for growing ribbon of crystal |
| 03/13/2002 | EP1185727A1 Sequential hydride vapor-phase epitaxy |
| 03/13/2002 | EP1185726A1 Melt depth control for semiconductor materials grown from a melt |
| 03/13/2002 | EP1185725A1 Continuous melt replenishment for crystal growth |
| 03/13/2002 | CN1080777C Method for preparing relaxing ferroelectric single crystal lead magnoniobate |
| 03/12/2002 | US6356006 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device |
| 03/12/2002 | US6355107 Compound gas injection system |
| 03/10/2002 | WO2002077331A1 Method for flattening surface of oxide crystal to ultra high degree |
| 03/07/2002 | WO2002019414A1 Methods of inspecting and manufacturing silicon wafer, method of manufacturing semiconductor device, and silicon wafer |
| 03/07/2002 | WO2002018680A1 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates |
| 03/07/2002 | WO2002018678A1 Method for preparing single crystal oxide thin film |
| 03/07/2002 | WO2002018668A1 Titanium dioxide cobalt magnetic film and its manufacturing method |
| 03/07/2002 | WO2001086036A3 A multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
| 03/07/2002 | US20020028564 Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate |
| 03/07/2002 | US20020028291 Apparatus for fabricating a III-V nitride film and a method for fabricating the same |