Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
09/2000
09/05/2000US6113691 Subjecting substrate to organometallic and hydride precursor compounds in epitaxy reactor at ultra low pressure, whereby organometallic and hydride precursor compounds react at substrate surface without substantial reaction in gas phase
09/05/2000US6113688 Process for producing single crystals
09/05/2000US6113687 Method for making a silicon single crystal wafer
09/05/2000US6113686 Single crystal growing method and apparatus
08/2000
08/31/2000WO2000050672A1 Single crystal growth apparatus and single crystal growth method
08/30/2000EP1032055A2 Method for producing thin films of ribbon-like oxide high-temperature superconductor
08/30/2000EP0914484B1 Nickel-base superalloy
08/29/2000US6111284 Ferroelectric thin-film device
08/29/2000US6111191 Sheet is made from silicon on a setter material which supports the silicon material; setter material and silicon are subjected to a thermal profile all of which promote columnar growth
08/29/2000US6110839 Dissolving metallic silicon and/or silicon compounds in an alkaline solution and neutralizing metallic ions in the alkaline solution by reaction products of hydrogen and silicates generated by reacting silicon and alkali
08/29/2000US6110759 Composite structure with a growth substrate having a diamond layer and a plurality of microelectronic components, and process for producing such a composite structure
08/29/2000US6110274 Process and apparatus for producing polycrystalline semiconductor
08/29/2000US6110272 Method for producing silicon single crystal
08/29/2000US6110240 Superhard article with diamond coat and method of manufacturing same
08/29/2000CA2138095C Thermal management of electronic components using synthetic diamond
08/24/2000WO2000049207A1 Method for growing an $g(a)-sic volume single crystal
08/24/2000WO2000022201A9 Method and apparatus for accurately pulling a crystal
08/23/2000EP1030196A1 Electrochemical process for fabricating article exhibiting substantial three-dimensional order and resultant article
08/23/2000EP1029956A1 Seed crystal and method for preparing single crystal
08/23/2000EP0914483B1 Nickel-base superalloy
08/22/2000US6107197 Carbon-contaminated layer on the silicon substrate is exposed to a chlorine radical to cause a chemical reaction of the chlorine radical with carbon atoms of the carbon contaminated layer to generate chlorine carbide
08/22/2000US6106739 Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced
08/22/2000US6106615 Method of forming biaxially textured alloy substrates and devices thereon
08/22/2000US6106614 Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced
08/22/2000US6105518 Durable plasma treatment apparatus and method
08/16/2000EP1028328A2 Process for fabricating article exhibiting substantial three-dimensional order and resultant article
08/16/2000EP1027737A1 Supraconductor structure with a glass substrate and a high temperature supraconductor deposited thereon in addition to a method for producing said structure
08/16/2000EP1027483A1 Method of polishing cvd diamond films by oxygen plasma
08/15/2000US6103670 Method of manufacturing oxide superconductor containing Ag and having substantially same crystal orientation
08/15/2000US6103402 The power density is reduced and the interaction time is increased, which allows for a significant increase in temperature of the substrate immediately adjacent the molten pool at the time that solidifiction occurs, reduces cracking
08/15/2000US6103401 Window for an optical use and a process for the production of the same
08/15/2000US6103023 Thin films of quasicrystalline alloys, their preparation and their uses
08/15/2000CA2112308C Method of making white diamond film
08/11/2000CA2296819A1 Process for fabricating article exhibiting substantial three-dimensional micron-scale order and resultant article
08/10/2000WO2000046433A1 Epitaxial silicon wafer and its production method, and substrate for epitaxial silicon wafer
08/10/2000WO2000046432A1 Tungsten doped crucible and method for preparing same
08/10/2000WO2000046431A1 Method for producing nitride monocrystals
08/10/2000WO2000046430A2 Dendrite thickness control system for growing silicon ribbon
08/10/2000DE19904378A1 Verfahren zur Herstellung von Nitrid-Einkristallen A process for producing nitride crystals
08/09/2000EP1025288A1 Process for preparing a silicon melt from a polysilicon charge
08/09/2000EP0978146A4 Columnar-grained polycrystalline solar cell substrate and improved method of manufacture
08/09/2000CN1055324C Amorphous in-situ synthesized nm silicon nitride crystal whisker
08/08/2000US6099748 Silicon wafer etching method and silicon wafer etchant
08/08/2000US6099652 Apparatus and method for depositing a substance with temperature control
08/08/2000US6099641 Apparatus for pulling a single crystal
08/08/2000US6099640 Molecular beam epitaxial growth method
08/02/2000EP1023744A1 Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers
08/02/2000EP1023246A1 Diamond core with a diamond coating
08/02/2000CN1261928A Low defect density silicon
08/02/2000CN1261927A Apparatus and method for nucleotion and deposition of diamond using hot-filament DC plasma
08/02/2000CN1055142C Process for preparing nickel-aluminium base alloy single crystal
08/01/2000US6096607 Method for manufacturing silicon carbide semiconductor device
08/01/2000US6096434 The conductive oxide thin film is an epitaxial film composed of strontium ruthenate formed on silicon substrate
08/01/2000US6096130 Method of crystal growth of a GaN layer over a GaAs substrate
08/01/2000US6096129 Method of and apparatus for producing single-crystalline diamond of large size
07/2000
07/27/2000WO2000043577A1 Cdv method of and reactor for silicon carbide monocrystal growth
07/26/2000EP1021838A1 Method and device for producing a wafer from a semiconducting material
07/26/2000EP1021598A1 Heat shield for crystal puller
07/26/2000EP0583374B1 Method and apparatus for plasma deposition
07/25/2000US6093913 Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections
07/25/2000US6093244 Silicon ribbon growth dendrite thickness control system
07/20/2000WO2000042621A2 Epitaxial thin films
07/20/2000WO2000042243A1 Process of stacking and melting polycrystalline silicon for high quality single crystal production
07/19/2000EP1020937A1 Parallel plate structure provided with pzt thin-film bimorph and method of fabrication thereof
07/19/2000EP1020546A1 Quartz glass crucible for pulling silicon monocrystal and method of manufacturing the same
07/18/2000US6090440 Fixing fine particles on core
07/18/2000US6090199 Continuous melt replenishment for crystal growth
07/13/2000WO2000022204A3 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys
07/12/2000EP1018172A1 Relaxor ferroelectric single crystals for ultrasound transducers
07/12/2000CN1260009A Method for producing coated workpieces, uses and installation for the method
07/12/2000CN1259593A Prodn. method of potassium titanate whisker and fiber
07/11/2000US6086671 Method for growing a silicon single crystal
07/11/2000US6086670 Silicon wafer and method for producing the same
07/11/2000CA2190231C Method and apparatus for coating a substance with diamond film
07/06/2000WO2000039371A1 Method of manufacturing single-crystal silicon carbide
07/05/2000EP1017091A2 A processing method of silicon wafer and a processing apparatus
07/05/2000EP0989211A4 Process for obtaining diamond layers by gaseous-phase synthesis
07/05/2000CN1258764A Tetragonal conical compound as non-linear optical material and crystal growth
07/04/2000US6083886 Method of preparing oxide superconducting bulk body
07/04/2000US6083884 A-axis high temperature superconducting films with preferential in-plane alignment
07/04/2000US6083319 Non-linear crystals and their applications
07/04/2000US6082294 Method and apparatus for depositing diamond film
06/2000
06/29/2000WO2000037720A1 Bonding method of synthetic corundum, production method of synthetic corundum cell, and the synthetic corundum cell
06/29/2000WO2000037719A1 Agglomeration of silicon powders
06/29/2000DE19859288A1 Agglomeration von Siliciumpulvern Agglomeration of silicon powders
06/29/2000CA2355862A1 Agglomeration of silicon powders
06/28/2000EP1013802A1 Method of joining synthetic corundum, method of manufacturing synthetic corundumcell, and corundum cell
06/28/2000EP1012357A1 Non-dash neck method for single crystal silicon growth
06/28/2000EP0819187B1 Process for growing an epitaxial film on an oxide surface and product
06/28/2000CN1257944A Process for preparing nm-class silicon carbonite whisker/fibre
06/28/2000CN1257943A Equipment for growing high-temp oxide crystal
06/27/2000US6080378 High quality diamond films characterized by their intensity ratio of cathodoluminescence measured at room temperature; chemical vapor deposition on substrates comprising platinum, iridium, nickel, their alloys, silicon or silicides
06/27/2000US6080237 Method for production of dislocation-free silicon single crystal
06/22/2000WO2000036192A1 Method for producing silicon single crystal, and silicon single crystal and silicon wafer produced by the method
06/21/2000EP0989212A4 Lanthanum gallium silicate disc and its preparation method
06/21/2000CN1257556A Low defect density ideal oxygen precipitating silicon
06/21/2000CA2292853A1 Process and apparatus for synthesizing and growing crystals
06/20/2000US6077348 Single crystal pulling apparatus, single crystal support mechanism, and single crystal pulling method
06/20/2000US6077347 Single crystal pulling apparatus and droppage preventing device
06/20/2000US6077346 Semiconductor single crystal growing apparatus and crystal growing method