C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2002
11/19/2002	US6483645 Garnet crystal for Faraday rotator and optical isolator having the same
11/19/2002	US6482263 Heat shield assembly for crystal pulling apparatus
11/19/2002	US6482262 Deposition of transition metal carbides
11/19/2002	US6482261 Magnetic field furnace
11/19/2002	US6482260 Silicon single crystal wafer and a method for producing it
11/19/2002	US6482259 Method for single crystal growth of barium titanate and barium titanate solid solution
11/14/2002	WO2002090625A1 A method to produce germanium layers
11/14/2002	WO2002090262A1 Method for preparing single crystalline zns powder for phosphor
11/14/2002	WO2001027972A9 Molecular scale electronic devices
11/14/2002	US20020168836 After film (dopant layer) containing doping elements is formed on surface of substrate a vapor phase synthetic diamond film is formed on dopant layer and dopant layer contains diamond particles which become sources of diamond nuclei
11/14/2002	US20020167010 High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
11/14/2002	US20020166340 Silica crucibles and methods for making the same
11/14/2002	CA2445772A1 A method to produce germanium layers
11/13/2002	EP1255796A2 Scintillator crystals, method for making same, use thereof
11/13/2002	CN1379128A Ultra-amphosphobic film and its preparing process
11/13/2002	CN1379127A Process for preparing chemical-specific Mg-doped lithium niobate crystal with periodic polarizing microstructure
11/13/2002	CN1379126A Sosoloid of magnesium zinc bromophosphate and its preparing process
11/13/2002	CN1379125A Non-linear optical crystal of magnesium zinc bromophosphate and its preparing process and application
11/07/2002	WO2001061081A9 Process for producing a silicon melt
11/07/2002	WO2001025001A9 Beads of polycrystalline alkali-metal or alkaline-earth metal fluoride, their preparation and their use
11/07/2002	US20020165155 Crystallization of IGF-1
11/07/2002	US20020162501 As material for an optical element to be used in a lithographic exposure apparatus
11/07/2002	US20020162419 Progressively solidifying a raw gallium material provided in liquid state inside a vessel while stirring, such that diameter of tubular solidification boundary gradually advances from inner wall plane of vessel towards center; separating
11/07/2002	DE10120730A1 Verfahren und Vorrichtung zur Messung der Phasengrenze Method and apparatus for measuring the phase boundary
11/06/2002	EP1254861A1 Silicon continuous casting method
11/06/2002	EP0737258B1 Process for deposition of diamondlike, electrically conductive and electron-emissive carbon-based films
11/06/2002	CN1378238A Method for growing GaN crystal chip and GaN crystal chip
11/06/2002	CN1377832A Process for synthesizing different crystal form one-dimensional single crystal mangnesium dioxide nano wire
11/05/2002	US6476988 Thin film forming method, display, and color filter
11/05/2002	US6476706 Current limiter having a high-temperature superconductor
11/05/2002	US6475886 Fabrication method of nanocrystals using a focused-ion beam
11/05/2002	US6475820 Method for growing semiconductor layer and method for fabricating semiconductor light emitting elements
11/05/2002	US6475276 Production of elemental thin films using a boron-containing reducing agent
10/2002
10/31/2002	US20020160426 Using drops; storage; crystallization; detection of images
10/31/2002	US20020157790 First wafer doped with hydrogen ions or rare gas ions is bonded to a second wafer and then delaminated by heat treatment to produce bonded wafer
10/31/2002	US20020157602 Catch pan for melt leakage in apparatus for pulling single crystal
10/31/2002	US20020157599 Method and apparatus for measuring the position of a phase interface during crystal growth
10/31/2002	US20020157598 Silicon wafer and method for producing silicon single crystal
10/30/2002	EP1252375A1 Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
10/30/2002	CN1377311A Silicon carbide epitaxial layers grown on substrates offcut towards
10/30/2002	CN1377296A Growth of diamond clusters
10/29/2002	US6472040 Semi-pure and pure monocrystalline silicon ingots and wafers
10/29/2002	US6471768 Method of and apparatus for growing ribbon of crystal
10/24/2002	WO2002083998A1 Multicompartment container for growing calcium fluoride monocrystals
10/24/2002	WO2002083997A1 Process for growing calcium fluoride monocrystals
10/24/2002	WO2002059399A3 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates
10/24/2002	US20020155713 Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE
10/24/2002	US20020155683 Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE
10/24/2002	US20020155630 Cutting thin film of silicon wafer; cleaning; heat treatment; detecting defects using scanning optical microscopes
10/24/2002	US20020155504 Method for diffracting crystals formed by submicroliter crystallization experiments
10/24/2002	US20020152952 Process for producing an epitaxial layer of gallium nitride
10/24/2002	US20020152951 Method of epitaxially growing device structures with submicron group III nitride layers utilizing HVPE
10/23/2002	CN1093182C Decarbonizatino colour-removing annealing method for sapphire crystal
10/23/2002	CN1093085C Silicon carbide gemstones
10/22/2002	US6469314 Thin multi-well active layer LED with controlled oxygen doping
10/22/2002	US6468884 Method of forming silicon-contained crystal thin film
10/22/2002	US6468882 Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate
10/22/2002	US6468881 Method for producing a single crystal silicon
10/22/2002	US6468642 Fluorine-doped diamond-like coatings
10/17/2002	WO2002082047A2 High throughput screening of crystallization of materials
10/17/2002	WO2002081789A1 METHOD FOR MANUFACTURING ZnTe COMPOUND SEMICONDUCTOR SINGLE CRYSTAL ZNTE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL, AND SEMICONDUCTOR DEVICE
10/17/2002	WO2002081786A1 Method and apparatus for preparing molten silicon melt from polycrystalline silicon charge
10/17/2002	WO2002081044A2 Efg crystal growth apparatus and method
10/17/2002	US20020149023 Structure and method for fabricating III-V nitride devices utilizing the formation of a compliant substrate
10/17/2002	CA2442914A1 High throughput screening of crystallization of materials
10/16/2002	EP1249522A2 Oxygen doping method for a gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
10/16/2002	EP1249521A1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME
10/16/2002	EP1249519A1 Protein crystallization apparatus and protein crystallization method
10/16/2002	EP1190123B1 Encapsulation of crystals via multilayer coatings
10/16/2002	EP1042544B1 Growth of very uniform silicon carbide epitaxial layers
10/16/2002	CN1374416A Method of preparing silicon carbide fiber or fabric
10/16/2002	CN1092602C Process and apparatus for producing polycrystalline silicon
10/15/2002	US6465825 Single crystal si substrate; a mgo buffer layer epitaxially grown on said single crystal si substrate; and a metallic thin film made of ir or rh epitaxially grown on said mgo buffer layer.
10/15/2002	US6465669 Organometallic compounds for use in metal-organic vapor-phase epitaxy
10/15/2002	US6464781 Method of suppressing convection in a fluid in a cylindrical vessel
10/11/2002	CA2343915A1 Three dimensionally periodic structural assemblies on nanometer and longer scales
10/10/2002	WO2002080225A2 Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques
10/10/2002	WO2002079550A1 Process for preparing fluoride monocrystals
10/10/2002	WO2002079549A2 Preparation of 157nm transmitting barium fluoride crystals with permeable graphite
10/10/2002	WO2002079533A1 Aluminum alloy sheet excellent in formability and hardenability during baking of coating and method for production thereof
10/10/2002	WO2002078922A1 Jet system for spherical shaped devices
10/10/2002	WO2000000674A3 Process for growth of defect free silicon crystals of arbitrarily large diameters
10/10/2002	US20020146895 Providing silicon substrate having surface; forming by atomic layer deposition seed layer on surface of silicon substrate; forming by atomic layer deposition of layers of high dielectric constant oxide on seed layer
10/10/2002	US20020145488 Surface acoustic wave device with KNb03 piezoelectric thin film, frequency filter, oscillator, electronic circuit, and electronic apparatus
10/10/2002	US20020144649 EFG crystal growth apparatus and method
10/10/2002	US20020144645 Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates
10/10/2002	US20020144643 Method for forming a single crystalline film
10/10/2002	US20020144642 Apparatus and process for the preparation of low-iron single crystal silicon substantially free of agglomerated intrinsic point defects
10/10/2002	CA2712316A1 Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof
10/09/2002	EP1169497B1 Method and system of controlling taper growth in a semiconductor crystal growth process
10/09/2002	EP0922307B1 Series of layers and component containing such
10/09/2002	CN2515067Y Motor vehicle license tag fixing device having crystal plate
10/09/2002	CN1373820A Crystal growth and annealing method and apparatus
10/09/2002	CN1092253C Preparing of rare-earth iron doped LN, LT optical super lattice material and its use
10/09/2002	CN1092148C Single crystals of lead tungstate
10/08/2002	US6462357 Epitaxial growth of nitride compound semiconductor
10/08/2002	US6462355 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
10/08/2002	US6461943 Method of making semiconductor device
10/08/2002	US6461889 Method of fabricating semiconductor device with diamond substrate
10/08/2002	US6461737 Epitaxial compound structure and device comprising same

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