Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/2002
10/08/2002US6461582 Single-crystal rod and process for its production
10/08/2002US6461447 Substrate for epitaxial growth
10/08/2002US6461427 Barium doping of molten silicon for use in crystal growing process
10/08/2002US6461426 Method of supplying silicon raw material, method of producing silicon single crystal, and poly-silicon
10/03/2002WO2002077330A1 Heat shield assembly for crystal puller
10/03/2002WO2002060827A3 Method for quartz crucible fabrication
10/03/2002WO2001024921A9 Crystalline gallium nitride and method for forming crystalline gallium nitride
10/03/2002US20020143153 Monitoring crystalization on microarray; generate microarray, incubate with sample of mother liquor, detect crystal formation in the drops, take images of drops
10/03/2002US20020142566 Silicon wafers for CMOS and other integrated circuits
10/03/2002US20020142171 Silicon single crystal, silicon wafer, and epitaxial wafer
10/03/2002US20020141934 Graphitic polyhedral crystals in the form of nanotubes, whiskers and nanorods, methods for their production and uses thereof
10/03/2002US20020139960 Superconductive film may be obtained by applying organic solvent solution of above metal complex composition to substrate and heat treating coating
10/03/2002US20020139688 Zinc oxide with acicular structure, process for its production, and photoelectric conversion device
10/03/2002US20020139298 production device for high-quality silicon single crystals
10/03/2002US20020139296 Method for growing single crystal of compound semiconductor and substrate cut out therefrom
10/03/2002US20020139294 Low defect density regions of self-interstitial dominated silicon
10/02/2002EP1245702A2 Process for producing a gallium nitride crystal substrate
10/02/2002CN1372604A Process for preparing single crystal silicon having uniform thermal history
10/01/2002US6459134 Semiconductor devices which have analog and digital circuits integrated on a common substrate
10/01/2002US6458415 Method of forming diamond film and film-forming apparatus
10/01/2002US6458207 Silicon carbide single-crystals
10/01/2002US6458206 Cantilever with whisker-grown probe and method for producing thereof
10/01/2002US6458204 Method of producing high-quality silicon single crystals
10/01/2002US6458203 System for manufacturing a single-crystal ingot employing czochralski technique, and method of controlling the system
10/01/2002US6458202 Process for preparing single crystal silicon having uniform thermal history
09/2002
09/26/2002WO2002075025A2 Process for preparing low defect density silicon using high growth rates
09/26/2002WO2002059401A8 Energy pathway arrangement
09/26/2002US20020136881 Expanded carbon fiber product and composite using the same
09/26/2002US20020134302 Heat shield assembly for crystal puller
09/26/2002DE10114698A1 Component made from quartz glass e.g. crucible having high thermal stability comprises a mold, part of which is provided with a stabilizing layer having a higher softening temperature than quartz glass
09/25/2002EP1243676A2 Expanded carbon fiber product and composite using the same
09/25/2002EP1242647A1 Method of depositing transition metal nitride thin films
09/25/2002EP1242304A1 Nanostructures, their applications and method for making them
09/25/2002EP0835336B1 A device and a method for epitaxially growing objects by cvd
09/25/2002EP0654169B1 Cubic metal oxide thin film epitaxially grown on silicon
09/25/2002CN1371434A Slicing of single-crystal films using ion implantation
09/25/2002CN1371433A Epitaxial growing method for aluminium nitride and growing chamber therefor
09/24/2002US6454855 Method for producing coated workpieces, uses and installation for the method
09/24/2002US6454851 Method for preparing molten silicon melt from polycrystalline silicon charge
09/19/2002WO2002073244A2 Method of making high repetition rate excimer laser crystal optics and uv<200nm transmitting optical floride crystal
09/19/2002WO2002072909A1 Laminated film and method of forming film
09/19/2002WO2002072903A1 Intermetallic compound superconducting material comprising magnesium and beryllium and alloy superconducting material containing the intermetallic compound and method for preparing them
09/19/2002US20020132719 Fluoride crystalline optical lithography lens element blank
09/19/2002US20020130337 Ferroelectric, memory device and their manufacturing methods
09/19/2002US20020129761 Nanofiber and method of manufacturing nanofiber
09/19/2002US20020129760 Method of and apparatus for pulling up crystal
09/19/2002US20020129759 Method for producing silicon single crystal
09/18/2002EP1241702A1 Method for producing group iii nitride compound semiconductor and group iii nitride compound semiconductor device
09/18/2002EP1241282A1 Method of and apparatus for pulling up crystal
09/18/2002EP1241141A2 Silica crucibles and methods for making the same
09/18/2002EP1147248B1 Device for producing single crystals
09/18/2002CN1369578A Alkaline rare earth-carbonate crystical film and its hydrothermal preparing process
09/17/2002US6452140 Floating/melting using dummy micro-gravitational field by magnetic force
09/17/2002US6451113 Method and apparatus for growing oriented whisker arrays
09/17/2002US6451110 Process for producing a planar body of an oxide single crystal
09/17/2002US6451108 Method for manufacturing dislocation-free silicon single crystal
09/17/2002US6451106 Beads of polycrystalline alkali-metal or alkaline-earth metal fluoride, their preparation, and their use for preparing optical single crystals
09/14/2002CA2375384A1 Method of and apparatus for pulling up crystal
09/12/2002WO2002071609A1 Piezoelectric substrate for surface acoustic wave device and surface acoustic wave device
09/12/2002WO2002071558A1 High repetition rate uv excimer laser
09/12/2002WO2002071555A2 High repetition rate excimer laser system
09/12/2002US20020127405 Diamond semiconductor and method for the fabrication thereof
09/12/2002US20020124965 Method for fabricating a III-V nitride film and an apparatus for fabricating the same
09/12/2002US20020124792 Crystal puller and method for growing single crystal semiconductor material
09/12/2002US20020124791 Silicon wafer and method for producing the same
09/12/2002US20020124790 Organic ammonium molecule contains a functional chromophore; semiconductive, ferromagnetic properties
09/11/2002EP1090168B1 Electrical resistance heater for crystal growing apparatus and its method of use
09/11/2002CN1090552C Abrasive material for precision surface treatment and manufacturing method thereof
09/10/2002US6447850 Polycrystalline silicon thin film forming method
09/10/2002US6447606 Method for producing a single-crystalline film of KLN or KLNT
09/10/2002US6447604 Depositing nitride homoepitaxial layer by vapor phase epitaxy (vpe)
09/06/2002WO2002068709A1 A chemical vapor deposition process and apparatus thereof
09/06/2002WO2002068398A1 New crystal forms of lamotrigine and processes for their preparations
09/06/2002WO2002047117A3 Preparation of nanocrystallites
09/06/2002CA2439468A1 New crystal forms of lamotrigine and processes for their preparations
09/05/2002US20020123157 Method for fabricating group III-V compound semiconductor substrate
09/05/2002US20020122450 High repetition rate UV excimer laser
09/05/2002US20020122286 Energy pathway arrangement
09/05/2002US20020121238 Process for preparing single crystal silicon having improved gate oxide integrity
09/05/2002US20020121237 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates
09/04/2002EP1084286B1 Electrical resistance heater for crystal growing apparatus
09/04/2002EP0973964B1 Low defect density, self-interstitial dominated silicon
09/04/2002EP0964943B1 METHOD FOR GROWING MONOCRYSTALS OF HIGH-TEMPERATURE SUPRACONDUCTORS MADE OF RARE EARTH-CUPRATES OF FORM SE1+xBa2-xCu3O7-delta
09/04/2002CN1367878A Fluoride lens crystal for optical microlithography systems
09/04/2002CN1367275A Preparation method of block silicone carbide monocrystal growth
09/03/2002US6444620 High temperature superconductor having low superconducting anisotropy and method for producing the superconductor
09/03/2002US6444028 Charging material and holding system for the charging material
08/2002
08/29/2002WO2002066714A2 Process for preparing single crystal silicon having improved gate oxide integrity
08/29/2002US20020119659 Crystal growth method of an oxide and multi-layered structure of oxides
08/29/2002US20020117661 Silicon-based film and photovoltaic element
08/29/2002US20020117467 Evaporating drops of transition metal intermetallic forming ultrafine three-dimensional structure on substrate surface; electroconductivity; semiconductors
08/29/2002US20020117105 Method of heat-treating fluoride crystal, method of producing optical part, and optical apparatus
08/29/2002US20020117103 Method of growing a semiconductor multi-layer structure
08/29/2002US20020117102 Iron nitride thin film and methods for production thereof
08/28/2002EP1235268A1 Methods of inspecting and manufacturing silicon wafer, method of manufacturing semiconductor device, and silicon wafer
08/28/2002EP1235256A2 A method of growing a semiconductor multi-layer structure
08/28/2002EP1234899A2 A single crystal and method of manufacturing same
08/28/2002EP1234898A1 Calcium fluoride crystal and method and apparatus for producing the same
08/28/2002CN1366098A Vanadate for measuring dislocation density and etching process of doped monocrystal
08/27/2002US6440242 Method of joining synthetic corundum, method of manufacturing synthetic corundum cell, and synthetic corundum cell