Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/1999
10/27/1999EP0828867A4 Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities
10/27/1999EP0728230B1 Method of depositing monomolecular layers
10/27/1999CN1046006C Growth process for large-size cerium fluoride crystal
10/27/1999CN1046004C Descent method for growing large size cesium iodide (CSI) crystal
10/26/1999US5974336 Oxide superconductor and method of manufacturing the same
10/26/1999US5972106 Comprising cylinder coaxially surrounding single crystal pulling rod having upper end airtightly connected to pulling chamber and lower end close to silicon melt crucible; for controlling temperature distribution and thermal history
10/20/1999EP0950132A1 CaTiO 3? INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR
10/20/1999EP0950125A1 Method for making a diamond-coated member
10/19/1999US5970337 Ferroelectric film capacitor with intergranular insulation
10/19/1999US5970314 Process for vapor phase epitaxy of compound semiconductor
10/19/1999US5968877 Article comprising substrate sequentially coated with epitaxial buffer layer(s) and high critical temperature (tc) yttrium-barium-copper oxide (ybco) layer
10/19/1999US5968266 Apparatus for manufacturing single crystal of silicon
10/19/1999US5968265 Method for producing silicon carbide monocrystals
10/19/1999US5968264 Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same
10/19/1999US5968263 Open-loop method and system for controlling growth of semiconductor crystal
10/19/1999US5968262 Method of fabricating silicon single crystals
10/19/1999US5968260 Method for fabricating a single-crystal semiconductor
10/14/1999WO1999033605A9 Turbine components with skin bonded to substrates
10/13/1999EP0949690A2 Mg-doped high-temperature superconductor
10/13/1999EP0949359A1 Process for producing a silicon single crystal by Czochralski method
10/13/1999EP0948672A1 Apparatus for growing silicon carbide crystals
10/13/1999EP0948671A1 Method for preparation of metal intercalated fullerene-like metal chalcogenides
10/12/1999US5964966 Formed by rolling and annealing a nickel alloy containing specific amounts of a group 5b element, group 6b element, tin, aluminum, copper, zinc and titanium; low curie point, enhanced mechanical properties; superconductor applications
10/12/1999US5964944 Method of producing silicon carbide single crystal
10/12/1999US5964943 Method of producing boron-doped monocrystalline silicon carbide
10/12/1999US5964941 Crystal pulling method and apparatus
10/07/1999WO1999050482A1 Open-loop method and system for controlling growth of semiconductor crystal
10/07/1999DE19913358A1 Single crystal growth process especially for a cerium substituted yttrium-iron garnet single crystal for optical applications
10/06/1999EP0947610A2 A single crystal-manufacturing equipment and a method for manufacturing the same
10/06/1999EP0947609A2 Method of preparing a compound semiconductor crystal and compound semiconductor crystal
10/06/1999EP0947466A1 Process for producing carbon nanotubes, process for producing carbon nanotube film, and structure provided with carbon nanotube film
10/06/1999EP0946974A1 Forming a crystalline semiconductor film on a glass substrate
10/06/1999EP0946959A1 Diamond surfaces
10/06/1999EP0946795A1 Gemstones formed of silicon carbide with diamond coating
10/06/1999EP0871803B1 PEROVSKITE WITH AO*(ABO3)n LAYER
10/06/1999CN2341998Y Porous push plate coal agglutinating kiln
10/06/1999CN1231003A Single crystal SiC and process for preparing the same
10/05/1999US5962875 Light emitting device, wafer for light emitting device, and method of preparing the same
10/05/1999US5961719 Nucleation of diamond films using an electrode
10/05/1999US5961717 Synthesis of phosphorus-doped diamond
10/05/1999US5961715 Method for pulling a single crystal
09/1999
09/30/1999WO1999049109A1 Method for growing crystals in domestic conditions
09/30/1999WO1999001593A3 Elimination of defects in epitaxial films
09/30/1999DE19913123A1 Vapor phase crystal growth of bismuth-strontium-calcium-copper oxide thin film useful as a superconductor material
09/30/1999DE19911755A1 Semiconductor crystal growth apparatus for manufacturing wafers used in integrated electronic device
09/30/1999DE19813453A1 Kristall-Ziehanlage Crystal-pulling system
09/29/1999EP0945528A1 Crystal pulling apparatus
09/29/1999EP0944916A1 Very long and highly stable atomic wires, method for making these wires, application in nano-electronics
09/28/1999US5959314 Polycrystalline silicon from the crystallization of microcrystalline silicon
09/28/1999US5958840 Oxide superconductor containing Ag and having substantially same crystal orientation, and method for manufacturing the same
09/28/1999US5958599 Structures having enhanced biaxial texture
09/28/1999CA2085807C Synthetic diamond wear component and method
09/23/1999WO1999048338A1 Thin film forming method, display, and color filter
09/22/1999EP0943703A2 Silicon single crystal and method for producing the same
09/22/1999EP0807191B1 Method and device for protecting the susceptor during epitaxial growth by cvd
09/22/1999CN1229445A Single crystal SiC and process for preparing the same
09/22/1999CN1045230C Method for producing super magnetostrictive rare-earth alloyed iron rod
09/21/1999US5955776 Spherical shaped semiconductor integrated circuit
09/21/1999US5955213 Single crystal substrates of silicon, with ferroelectric thin film with scandium and yttrium, manganese and oxygen for computers
09/21/1999US5955155 Forming a diamond coated layer on a substrate, with pretreatment, depositing and heat treatment
09/21/1999US5955146 Heating alkylmagnesium alkoxide; coating, evaporation, vapor deposition, sublimation, pyrolysis, decomposition
09/21/1999US5954875 Temperature keeping cylindrical body and/or a crucible
09/21/1999US5954873 Manufacturing method for a silicon single crystal wafer
09/16/1999WO1999046433A1 Auxiliary apparatus for melting single crystal raw material and method of melting single crystal raw material
09/16/1999WO1999029477A9 Fluorine-doped diamond-like coatings
09/16/1999WO1999021680A3 Turbine blades made from multiple single crystal cast superalloy segments
09/15/1999EP0942459A1 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device
09/15/1999EP0942078A1 Method for producing silicon single crystal wafer and silicon single crystal wafer
09/15/1999CN1045077C Tail gas recovery method and device in production of silicon carbide fibre
09/14/1999US5951771 Plasma jet system
09/14/1999US5951759 Multiple pairs of guide pipes; retaining wires; winding
09/14/1999US5951753 Forming a silicon single crystal
09/10/1999WO1999033605A3 Turbine components with skin bonded to substrates
09/07/1999US5948164 Seed crystal holder
09/07/1999US5948160 Method for detecting torsional oscillations and method for manufacturing a single crystal
09/01/1999EP0939447A1 Indium based alloy and infrared transducer using the same
09/01/1999EP0939146A1 Method for producing silicon ingot having directional solidification structure and apparatus for producing the same
09/01/1999EP0938599A1 Method and device for monitoring a melt for producing crystals
09/01/1999CN1227288A Tunable laser crystal sapphire and emerald and the preparation and use
09/01/1999CN1227287A Method for monocrystal growth and growth apparatus
09/01/1999CN1227286A Method for preparing relaxing ferroelectric single crystal lead magnoniobate
09/01/1999CN1044921C Apparatus and method for preparing single crystal
08/1999
08/31/1999US5945737 Thin film or solder ball including a metal and an oxide, nitride, or carbide precipitate of an expandable or contractible element
08/31/1999US5945725 Spherical shaped integrated circuit utilizing an inductor
08/31/1999US5944891 Method for the heat treatment of ZnSe crystal
08/26/1999WO1999042191A1 Dynamically controlled crystallization method and apparatus and crystals obtained thereby
08/25/1999EP0937790A2 Method of making GaN single crystal and apparatus for making GaN single crystal
08/24/1999US5942286 Method for manufacturing organic monomolecular film
08/23/1999CA2262239A1 Method for manufacturing single crystal, method for manufacturing single crystal ice, method for controlling crystal orientation of single crystal ice, apparatus for manufacturingsingle crystal ice, and technique for making ice for a skate-rink using single crystal ice
08/18/1999EP0936481A2 A method of processing a substrate made of a ferroelectric single crystalline material
08/18/1999EP0936289A1 A method for producing a silicon single crystal
08/18/1999CN1226291A Method and apparatus for making directional solidification castings
08/18/1999CN1225952A Non-linear optical crystal Ba2Be2B2O7
08/18/1999CN1225951A Low-temp.-phase barium metaborate large single crystal growing by air-cooled crystal growth method
08/17/1999US5940722 Method of manufacturing a semiconductor comprising an oxygen-containing silicon wafer
08/17/1999US5939361 Method of fabricating Tl or Hg-containing oxide superconductor film
08/17/1999US5939149 Method of forming hydrogen-free diamond like carbon (DLC) films
08/17/1999US5939140 Preheating mixed gases of hydrocarbon and hydrogen by heated metal body; carburization; high bonding strength
08/17/1999US5938843 Apparatus for pulling up crystal bodies
08/17/1999US5938841 Device for producing a single crystal
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