Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/2001
10/10/2001EP1034323B1 Apparatus for use in crystal pulling
10/10/2001CN1317058A Electrical resistance heater for crystal growing apparatus and its method of use
10/10/2001CN1316427A Laminated organic-inorganic perofskite with metal defect inorganic frame
10/09/2001US6299815 Process for producing piezoelectric ceramics
10/09/2001US6299684 Grip arranged on a pull shaft of a crystal pulling system
10/09/2001US6299683 Method and apparatus for the production of SiC by means of CVD with improved gas utilization
10/09/2001US6299682 Method for producing silicon ingot having directional solidification structure and apparatus for producing the same
10/09/2001US6299681 Single crystal conversion control
10/04/2001WO2001073848A1 Production method for bonding wafer and bonding wafer produced by this method
10/04/2001WO2001073829A1 Iii nitride compound semiconductor element and electrode forming method
10/04/2001WO2001073169A1 Silicon wafer and method for producing silicon single crystal
10/04/2001WO2001073168A1 PROCESS AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY OF CaF¿2?
10/04/2001WO2001073160A1 Method for preparing zinc oxide semi-conductor material
10/04/2001WO2001072406A1 High temperature/high pressure colour change of diamond
10/04/2001WO2001072404A1 High temperature/high pressure colour change of diamond
10/04/2001US20010027167 By applying RF power to a substrate holder and irradiating positive ions having a moderate energy while preventing damage to the strained lattice film to be stacked by oxygen negative ions; good crystalline property
10/04/2001US20010026873 Used in electronics and optoelectronics;
10/04/2001US20010025955 Diamond semiconductor and diamond semiconductor light-emitting device that uses the semiconductor
10/04/2001US20010025599 Process for producing a planar body of an oxide single crystal
10/04/2001US20010025598 Methods for growing large-volume single crystals from calcium fluoride and their uses
10/04/2001US20010025597 Low defect density, self-interstitial dominated silicon
10/04/2001EP1139437A2 Diamond semiconductor and diamond semiconductor light-emitting device
10/04/2001EP1138809A1 Silicon wafer and method for manufacturing the same
10/04/2001EP1138808A1 Process for producing a planar body of an oxide single crystal
10/04/2001EP1138063A1 Fabrication of gallium nitride layers by lateral growth
10/04/2001EP1137826A1 Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same
10/04/2001EP0972094B1 Low defect density, vacancy dominated silicon
10/04/2001DE10111778A1 Large superconductor-intermediate product comprises a structure with a finely divided phase with different peritectic temperatures, seed crystals arranged on an oxidic superconductor layer, and excluded phases
10/04/2001DE10014650A1 Silicon semiconductor wafer used as a substrate wafer is doped with specified concentration of hydrogen
10/03/2001CN1072282C Growth of silicon carbide monocrystal using silicon substrate beta-silicon carbide crystal
10/02/2001US6297522 Highly uniform silicon carbide epitaxial layers
10/02/2001US6296784 Optical parametric oscillators
10/02/2001US6296673 Methods and apparatus for performing array microcrystallizations
09/2001
09/27/2001WO2001071814A1 METHOD FOR PREPARING LOW-RESISTANT p-TYPE SrTiO¿3?
09/27/2001WO2001071069A1 Method for producing silicon single crystal having no flaw
09/27/2001WO2001070873A2 Nanocylinder arrays
09/27/2001WO2000022203A3 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy
09/27/2001US20010023945 Semi-insulating silicon carbide without vanadium domination
09/27/2001US20010023942 Semiconductor device of heterojunction structure having quantum dot buffer layer
09/27/2001US20010023941 Semiconductor wafer made from silicon and method for producing the semiconductor wafer
09/27/2001US20010023932 Bismuth-substituted rare earth-iron; minimal cracking while growing, cooling or polishing and worked; controlled liquid-phase epitaxial growth
09/27/2001EP1144737A3 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy
09/27/2001CA2404296A1 Nanocylinder arrays
09/26/2001EP1137069A1 Fabrication method for pasted soi wafer and pasted soi wafer
09/26/2001EP1136596A1 Silicon wafer and its method of fabrication
09/26/2001EP0708983B1 Chemical vapor deposition process for fabricating layered superlattice materials
09/26/2001CN1314506A Magnetic garnet monocrystal film and its preparation, and Faraday rotor using said monocrystal film
09/25/2001US6294726 Silicon with structured oxygen doping, its production and use
09/20/2001WO2001068957A1 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals
09/20/2001WO2001068956A1 Crystal growth device and method
09/20/2001WO2001068955A1 Iii-v nitride substrate boule and method of making and using the same
09/20/2001WO2001068954A2 Axial gradient transport apparatus and process
09/20/2001WO2001068559A1 Adhesive composite coating for diamond and diamond-containing materials and method for producing said coating.
09/20/2001US20010023092 Method of manufacturing a semiconductor device
09/20/2001US20010023022 Group III-V compound semiconductor wafers and manufacturing method thereof
09/19/2001EP1134794A1 Semiconductor thin film and thin film device
09/19/2001EP1133592A1 Method and system for controlling growth of a silicon crystal
09/19/2001EP1133591A1 Electrode assembly for electrical resistance heater used in crystal growing apparatus
09/19/2001EP1133590A1 Epitaxial silicon wafers substantially free of grown-in defects
09/19/2001EP0781355B1 Epitaxially layered structure
09/19/2001CN1313413A Process for growing shaped sapphire
09/18/2001US6291028 Forming plasma from inert gas introduced into processing chamber, bringing radio frequency energy used in plasma formation to full power, introducing remaining reactant gases to effect plasma deposition
09/18/2001US6290774 Sequential hydride vapor phase epitaxy
09/18/2001US6290773 Method and apparatus for fabricating single crystal
09/18/2001US6289843 Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface
09/13/2001US20010021574 Method of manufacturing silicon epitaxial wafer
09/13/2001US20010020696 Mn2+ activated green emitting SrAl12 O19 luminescent material
09/13/2001US20010020441 Single crystal-manufacturing equipment and a method for manufacturing the same
09/13/2001US20010020438 Method for manufacturing dislocation-free silicon single crystal
09/13/2001US20010020437 Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface
09/13/2001US20010020436 Process for producing a planar body of an oxide single crystal
09/13/2001DE10010485A1 Verfahren zur Herstellung von hochhomogenen, grossformatigen Einkristallen aus Calciumfluorid sowie deren Verwendung A process for preparing highly homogeneous, large-sized single crystals of calcium fluoride, and their use
09/13/2001DE10010484A1 Device for growing large volume single crystals has heating element arranged on side walls of melt crucible to prevent lateral radial heat flow
09/12/2001EP1132505A2 Single-crystal silicon carbide
09/12/2001EP1131477A1 Method and system for measuring polycrystalline chunk size and distribution in the charge of a czochralski process
09/12/2001CN1070822C Preparation of aluminosilicate zeolites
09/11/2001US6287889 Diamond thin film or the like, method for forming and modifying the thin film, and method for processing the thin film
09/11/2001US6287528 Method for removing dust
09/11/2001US6287382 Electrode assembly for electrical resistance heater used in crystal growing apparatus
09/11/2001US6287380 Low defect density silicon
09/07/2001WO2001064977A1 Method for producing crystals and/or crystal materials containing fluorine
09/07/2001WO2001064975A2 Method and device for growing large-volume oriented monocrystals
09/07/2001WO2001064600A1 Method for fabrication of lead based perovskite materials
09/06/2001US20010019877 Method of forming silicon-contained crystal thin film
09/06/2001US20010019453 Light-transmitting optical member, manufacturing method thereof, evaluation method therefor, and optical lithography apparatus using the optical member
09/06/2001US20010019241 Mn2+ activated green emitting SrAI12O19 luminescent material
09/06/2001US20010019132 Semi-insulating silicon carbide without vanadium domination
09/06/2001US20010019037 Three dimensionally periodic structural assemblies on nanometer and longer scales
09/06/2001US20010018892 Apparatus for fabricating single crystal
09/06/2001US20010018889 Apparatus for growing a semiconductor crystal and method of growing the same
09/06/2001US20010018887 Dissolving lithium carbonate and potassium carbonate powders in solvent and spray drying around niobium pentoxide powder, then heat treating the granulated powder to produce lithium potassium niobate raw material powder
09/06/2001DE10007179A1 Method of doping melt used for production of single crystals from semiconductor material involves immersing vessel having dopant into melt in crucible, and transferring dopant into melt through first opening that forms in the vessel
09/05/2001EP1130419A2 Optical member for vacuum ultraviolet, and aligner and device manufacture method using same
09/05/2001EP1130138A1 Crystal growing method and crystal growing apparatus
09/05/2001EP1130136A1 Process for manufacturing large single crystals of calcium fluoride and the use of the crystals in Photolithography
09/05/2001EP1129239A1 Method and system for stabilizing dendritic web crystal growth
09/05/2001EP1129238A2 Production of bulk single crystals of silicon carbide
09/05/2001EP0845055B1 SEED CRYSTAL FOR GROWING MONOCRYSTALS, USE OF THE SEED CRYSTAL AND PROCESS FOR PRODUCING SiC MONOCRYSTALS OR MONOCRYSTALLINE SiC LAYERS
09/05/2001CN1311356A Method and equipment for producing single crystal of oxides
09/05/2001CN1311355A Method for single-crystal growth