| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 07/19/2001 | US20010008299 Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts |
| 07/19/2001 | US20010008117 Insulating-containing ring-shaped heat shields and support members for Czochralski pullers |
| 07/19/2001 | US20010008114 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 07/19/2001 | DE10060575A1 Verfahren zum Züchten von Einkristallen A method for growing single crystals |
| 07/18/2001 | EP1115920A1 Method for obtaining a monocrystalline germanium layer on a monocrystalline silicon substrate, and resulting products |
| 07/18/2001 | EP1115918A2 ENHANCED i n /i TYPE SILICON MATERIAL FOR EPITAXIAL WAFER SUBSTRATE AND METHOD OF MAKING SAME |
| 07/18/2001 | CN1304460A Electrical resistance heater for crystal growing apparatus |
| 07/18/2001 | CN1304459A Process for preparing defect free silicon crystal which allows for variability in process conditions |
| 07/18/2001 | CN1303959A Indium-doped barium-titanate material and its preparation method |
| 07/18/2001 | CN1303958A Indium-doped strontium titanate material and its preparation method |
| 07/17/2001 | US6262516 Parallel plate structure provided with PZT thin-film bimorph and method of fabrication thereof |
| 07/17/2001 | US6261469 Three dimensionally periodic structural assemblies on nanometer and longer scales |
| 07/17/2001 | US6261362 Silicon epitaxial wafer manufacturing method |
| 07/12/2001 | US20010007707 Laminates having a buffer layer and cover layer |
| 07/12/2001 | US20010007238 Method for the growing of single crystals |
| 07/12/2001 | DE10100424A1 Korrosions- und abnutzungsbeständige, dünne Diamantfilmbeschichtung, Herstellungsverfahren und Anwendungen dafür Corrosion and wear-resistant, thin diamond film coating, manufacturing methods and applications for |
| 07/11/2001 | EP1114886A1 Crystal growing method and crystal growing apparatus |
| 07/11/2001 | EP1114793A1 Heterogeneous liquid-phase crystallisation of diamond |
| 07/11/2001 | CN1303131A Basis substrate for crystal growth and method for making substrate using same |
| 07/10/2001 | US6258608 Method for forming a crystalline perovskite ferroelectric material in a semiconductor device |
| 07/10/2001 | US6258472 Product having a substrate of a partially stabilized zirconium oxide and a buffer layer of a fully stabilized zirconium oxide, and process for its production |
| 07/10/2001 | US6258331 Apparatus for growing crystals |
| 07/10/2001 | US6258163 Method for producing silicon single crystal |
| 07/10/2001 | US6257224 Process for working a preform made of an oxide single crystal, and a process for producing functional devices |
| 07/09/2001 | WO2001064976A1 Saucer for escaped melt in apparatus for pulling up single crystal |
| 07/06/2001 | CA2328266A1 Corrosion and erosion resistant thin film diamond coating and applications therefor |
| 07/05/2001 | WO2001048798A1 Method for producing group iii nitride compound semiconductor and group iii nitride compound semiconductor device |
| 07/05/2001 | WO2001006545B1 ENHANCED n TYPE SILICON MATERIAL FOR EPITAXIAL WAFER SUBSTRATE AND METHOD OF MAKING SAME |
| 07/05/2001 | US20010006840 Method for growing a compound semiconductor, quantum well structure using the same, and compound semiconductor device including the same |
| 07/05/2001 | US20010006254 Thin film multilayered structure, ferroelectric thin film element, and manufacturing method of the same |
| 07/05/2001 | US20010006040 Method of preparing a compound semiconductor crystal |
| 07/05/2001 | US20010006039 A silicon wafer substrate is hydrogen-annealed to remove impurities and defects, then, an impurity buried layer is formed in an upper surface of silicon wafer substrate, which increases the number of contaminant attractor in upper surface |
| 07/05/2001 | US20010006038 Growing a magnetic garnet single crystal film by liquid phase epitaxy and employing a lead oxide-based flux either at a temperature higher than 940 degree C., or having a lead compound content less than 70 % or a combination of both |
| 07/05/2001 | DE10060886A1 Vorrichtung und Verfahren zum Beschichten nicht ebener Flächen von Gegenständen mit einem Diamantfilm Apparatus and method for coating non-planar surfaces of objects with a diamond film |
| 07/05/2001 | DE10055694A1 Strip-like nickel metal substrate used in the production of a high temperature superconductor consists of very pure nickel which is textured |
| 07/04/2001 | EP1113096A1 Method of producing a crystal sheet, apparatus for use in producing the same, and solar cell |
| 07/04/2001 | EP0956381B1 Apparatus for growing large silicon carbide single crystals |
| 07/04/2001 | CN1302080A Method for producing semiconductor structure with metal oxide interface between silicons |
| 07/03/2001 | US6254677 Semiconductor crystal, and method and apparatus of production thereof |
| 07/03/2001 | US6254675 Production of epitactic GaN layers on substrates |
| 07/03/2001 | US6254672 Low defect density self-interstitial dominated silicon |
| 06/28/2001 | WO2001047035A1 Thin multi-well active layer led with controlled o doping |
| 06/28/2001 | WO2001046500A1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME |
| 06/28/2001 | WO2000079570A3 Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
| 06/28/2001 | US20010004875 Device and method for producing at least one SiC single crystal |
| 06/28/2001 | US20010004874 Method of producing a crystal sheet, apparatus for use in producing the same, and solar cell |
| 06/27/2001 | EP0948672B1 Apparatus for growing silicon carbide crystals |
| 06/27/2001 | EP0581875B1 Process for growing crystals |
| 06/27/2001 | CN1301236A heterogeneous liquid-phase crystallisation of diamond |
| 06/26/2001 | US6251530 Thin-film of a high-temperature superconductor compound and method |
| 06/26/2001 | US6251184 Insulating-containing ring-shaped heat shields for czochralski pullers |
| 06/26/2001 | US6251182 Susceptor for float-zone apparatus |
| 06/21/2001 | WO2001044543A1 Polycrystalline material, method for the production thereof and articles made therefrom |
| 06/21/2001 | WO1998005807A8 CaTiO3 INTERFACIAL TEMPLATE STRUCTURE ON SUPERCONDUCTOR |
| 06/20/2001 | CN1067423C High-lightness high-distinguishability single-crystal colour projection display bube |
| 06/19/2001 | US6248400 Vapor phase diamond synthesis method |
| 06/19/2001 | US6248167 Method for single crystal growth and growth apparatus |
| 06/19/2001 | CA2152769C Synthesizing diamond film |
| 06/13/2001 | EP1106575A2 Method of preparing zeolite single crystals |
| 06/13/2001 | EP1105555A1 METHOD FOR GROWING SiC MONOCRYSTALS |
| 06/13/2001 | DE10051632A1 Substrate for crystal growth, has base on which crystal system containing separate crystals which are different from epitaxial crystal layer, and epitaxial crystal layer having island-like crystals, are formed |
| 06/13/2001 | CN1067022C Marking diamond |
| 06/12/2001 | US6245630 Spherical shaped semiconductor integrated circuit |
| 06/10/2001 | CA2323824A1 System and method for coating non-planar surfaces of objects with diamond film |
| 06/07/2001 | WO2001040536A1 Polycrystalline thin film and method for preparation thereof, and superconducting oxide and method for preparation thereof |
| 06/07/2001 | US20010003117 Method of preparing zeolite single crystals |
| 06/07/2001 | US20010003019 Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device |
| 06/07/2001 | DE10057413A1 Verfahren zur direkten Synthese von Indiumphosphid A process for the direct synthesis of indium phosphide |
| 06/06/2001 | EP1104494A1 Control of crystal anisotropy for perovskite oxides on semiconductor-based substrates |
| 06/06/2001 | CN1298039A Zinc oxide whisker coated with metal layer |
| 06/05/2001 | US6243598 Method of preparing rare earth-barium cuprates superconductors |
| 06/05/2001 | US6241820 Single crystal-manufacturing equipment and a method for manufacturing the same |
| 06/05/2001 | US6241818 Method and system of controlling taper growth in a semiconductor crystal growth process |
| 06/05/2001 | US6241184 Vehicle having a ceramic radome joined thereto by an actively brazed compliant metallic transition element |
| 05/31/2001 | WO2001039257A2 Silicon layer highly sensitive to oxygen and method for obtaining same |
| 05/31/2001 | WO2001038611A1 Silicon wafer for epitaxial wafer, epitaxial wafer, and method of manufacture thereof |
| 05/31/2001 | WO2001038255A1 Method for making a bowl in thermostructural composite material in particular for a monocrystalline silicon producing installation |
| 05/30/2001 | EP1102961A2 Cantilever with whisker-grown probe and method for producing thereof |
| 05/29/2001 | US6238478 Silicon single crystal and process for producing single-crystal silicon thin film |
| 05/25/2001 | WO2001036719A1 Silicon single crystal wafer and production method thereof and soi wafer |
| 05/25/2001 | WO2001036718A1 Silicon wafer and production method thereof and evaluation method for silicon wafer |
| 05/24/2001 | US20010001415 Method and apparatus for making directional solidification castings |
| 05/24/2001 | US20010001383 Producing fluoride crystal via adding scavenger to calcium fluoride raw material and refining, then growing a crystal by using a crucible lowering method; excimer lasers |
| 05/23/2001 | EP1101841A2 Substrate for epitaxy of III-V compounds and a method for producing the same |
| 05/23/2001 | EP0865514B1 Process for the preparation of aluminum oxide film using dialkylaluminum alkoxide |
| 05/22/2001 | US6236559 Capacitor |
| 05/22/2001 | US6235110 Method of producing recrystallized-material-member, and apparatus and heating method therefor |
| 05/22/2001 | US6235109 Method of preparing crystalline or amorphose material from melt |
| 05/17/2001 | WO2001035452A1 Production method for silicon epitaxial wafer and silicon epitaxial wafer |
| 05/17/2001 | WO2001034882A1 Silicon single crystal wafer and production method therefor |
| 05/17/2001 | WO2001006545A3 ENHANCED n TYPE SILICON MATERIAL FOR EPITAXIAL WAFER SUBSTRATE AND METHOD OF MAKING SAME |
| 05/17/2001 | DE19940033A1 Verfahren und Vorrichtung zum Abscheiden von Schichten auf rotierenden Substraten in einem allseits beheizten Strömungskanal Method and apparatus for depositing layers on rotating substrates in a well-heated flow channel |
| 05/16/2001 | EP1099770A1 High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same |
| 05/16/2001 | EP1099014A1 Method and device for producing at least one silicon carbide monocrystal |
| 05/16/2001 | CN1295632A Open-loop method and system for controlling growth of semiconductor crystal |
| 05/15/2001 | US6232167 Method of producing a ferroelectric thin film coated substrate |
| 05/15/2001 | US6232156 Method of manufacturing a semiconductor device |
| 05/15/2001 | US6231673 Manufacturing method of semiconductor wafer, semiconductor manufacturing apparatus, and semiconductor device |
| 05/10/2001 | WO2001033260A1 Preconditioned crystals of lithium niobate and lithium tantalate and methods of preparing the same |
| 05/10/2001 | WO2001032966A1 Method for producing an initial polycrystalline silicon in the form of plates having a large surface and chamber for the precipitation of silicon |