| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
|---|
| 04/05/2000 | CN1249533A Epitaxial wafer, its mfg method and method for surficial cleaning of compound semiconductor substrate |
| 04/05/2000 | CN1249368A Single crystal substrate of gallium arsenide, and epitaxial wafer using same |
| 04/04/2000 | US6046096 Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure |
| 04/04/2000 | US6045916 Coating film and preparation method thereof |
| 04/04/2000 | US6045767 Charge for vertical boat growth process and use thereof |
| 04/04/2000 | US6045613 Production of bulk single crystals of silicon carbide |
| 04/04/2000 | US6045611 Inserting a lithium gallium oxide (ligao2) seed crystal cut in a direction of an angle range of 30 degrees from a b-axis direction into a ligao2 melt, pulling seed crystal by the czochralski method, cutting the c-plane to obtain substrate |
| 03/30/2000 | WO2000000675A9 Crystal puller for growing low defect density, self-interstitial dominated silicon |
| 03/30/2000 | WO2000000674A9 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 03/29/2000 | EP0989600A2 Surface cleaning method for manufacturing II-VI compound semiconductor epitaxial wafers |
| 03/29/2000 | EP0989212A1 Lanthanum gallium silicate disc and its preparation method |
| 03/29/2000 | EP0989211A1 Process for obtaining diamond layers by gaseous-phase synthesis |
| 03/29/2000 | EP0988407A1 Method for producing coated workpieces, uses and installation for the method |
| 03/28/2000 | US6043140 Method for growing a nitride compound semiconductor |
| 03/25/2000 | CA2283532A1 An epitaxial wafer, a manufacturing method of the epitaxial wafer, and a surface cleaning method for a compound semiconductor substrate used in the epitaxial wafer |
| 03/23/2000 | WO2000015885A1 Method for obtaining a monocrystalline germanium layer on a monocrystalline silicon substrate, and resulting products |
| 03/22/2000 | EP0987538A1 Light-transmitting optical element for optical lithography apparatus |
| 03/22/2000 | EP0986655A1 THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS |
| 03/21/2000 | US6040070 Perovskite type ABO3 with surface layer |
| 03/21/2000 | US6039804 Crystallization tray |
| 03/21/2000 | US6039802 Single crystal growth method |
| 03/21/2000 | US6039801 During growth of a semiconductor crystal an oxygen gas is continuously injected into the crystal pulling apparatus in an exhaust tunnel to continuously oxidize silicon monooxide, silicon vapor and hypostoichiometric silicon dioxide |
| 03/16/2000 | WO2000014311A1 Crystallization tray |
| 03/14/2000 | US6037770 Optical magnetic field sensor probe having drum lenses |
| 03/14/2000 | US6036776 Method and device for manufacturing single crystals |
| 03/14/2000 | US6036774 Method of producing metal oxide nanorods |
| 03/09/2000 | WO2000012786A1 Method for producing silicon single crystal wafer and silicon single crystal wafer |
| 03/07/2000 | US6034036 Mixed oxide |
| 03/07/2000 | US6033490 Growth of GaN layers on quartz substrates |
| 03/07/2000 | US6033472 Semiconductor single crystal manufacturing apparatus |
| 02/29/2000 | US6031654 Suitable for a faraday rotator used for an optical isolator; contains mixed oxides of terbium, bismuth, iron, gallium and aluminum |
| 02/29/2000 | US6031252 Epitaxial wafer and method of preparing the same |
| 02/29/2000 | US6030450 Method of fabricating a silicon single crystal |
| 02/29/2000 | US6030449 Garnet single crystal for substrate of magneto-optic element and method of manufacturing thereof |
| 02/24/2000 | WO2000009786A1 Crystal growing method and crystal growing apparatus |
| 02/24/2000 | WO2000009785A1 Crystal growing method and crystal growing apparatus |
| 02/24/2000 | WO2000009784A1 Method and system for stabilizing dendritic web crystal growth |
| 02/24/2000 | CA2344518A1 Crystal growing method and crystal growing apparatus |
| 02/24/2000 | CA2340628A1 Crystal growing method and crystal growing apparatus |
| 02/24/2000 | CA2340404A1 Method and system for stabilizing dendritic web crystal growth |
| 02/23/2000 | CN1245540A Method for preparation of metal intercalated fullerene-like metal chalcogenides |
| 02/22/2000 | US6028877 Gallium nitride based semiconductor laser with an improved aluminum gallium nitride cladding layer disposed between an active region and a substrate |
| 02/22/2000 | US6027563 Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber |
| 02/22/2000 | US6027562 Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method |
| 02/17/2000 | WO2000008239A1 Seed crystal and method for preparing single crystal |
| 02/17/2000 | WO1999058925A3 Cantilever with whisker-grown probe and method for producing thereof |
| 02/16/2000 | CN1244724A Crystal growth technology and semiconductor device and its producing method |
| 02/15/2000 | US6025289 Single crystals doped with nitrogen and aluminum; synthetic gemstones having extraordinary toughness and hardness, and brilliance meeting or exceeding that of diamond |
| 02/10/2000 | WO2000007221A2 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots |
| 02/10/2000 | WO2000006812A1 Control of crystal anisotropy for perovskite oxides on semiconductor-based substrates |
| 02/10/2000 | DE19834447A1 Verfahren zum Behandeln von Halbleitermaterial A process for treating semiconductor material |
| 02/10/2000 | CA2337029A1 Control of crystal anisotropy for perovskite oxides on semiconductor-based substrates |
| 02/09/2000 | EP0978146A1 Columnar-grained polycrystalline solar cell substrate and improved method of manufacture |
| 02/08/2000 | US6022410 Molecular beam epitaxy chamber |
| 02/03/2000 | WO2000005754A1 Semiconductor thin film and thin film device |
| 02/03/2000 | DE19935184A1 Czochralski production of heavy silicon single crystals, for making large diameter silicon wafers, uses a relatively low maximum cusp magnetic field intensity at the crucible inner wall |
| 02/02/2000 | EP0976457A1 Method for treating semiconductor material |
| 02/02/2000 | EP0975828A1 Etching method |
| 02/02/2000 | CN1049023C Method for preparation of nitride nanometre whisker by using carbon nanometre tube |
| 02/02/2000 | CN1049018C Diamond-phase carbon tubes and CVD process for their production |
| 02/01/2000 | US6019842 Method and apparatus for loading raw material into a quartz crucible |
| 02/01/2000 | US6019838 Crystal growing apparatus with melt-doping facility |
| 02/01/2000 | US6019837 Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal |
| 01/27/2000 | WO2000004212A1 Method and device for producing at least one silicon carbide monocrystal |
| 01/27/2000 | WO2000004211A1 METHOD FOR GROWING SiC MONOCRYSTALS |
| 01/26/2000 | EP0973964A1 Low defect density, self-interstitial dominated silicon |
| 01/26/2000 | EP0973963A1 Low defect density silicon |
| 01/26/2000 | EP0973962A1 Low defect density, ideal oxygen precipitating silicon |
| 01/26/2000 | CN1242440A Method for heat treatment of monomorph of fluoride, and method for mfg. same |
| 01/20/2000 | WO2000003056A1 System and method for reducing particles in epitaxial reactors |
| 01/20/2000 | DE19917601A1 Silicon carbide single crystal production apparatus comprises a crucible with one or more heat flux control inserts of non-reactive vitreous carbon |
| 01/19/2000 | EP0972863A1 Method for annealing single crystal fluoride and method for manufacturing the same |
| 01/19/2000 | EP0972097A1 MECHANO-CHEMICAL POLISHING OF CRYSTALS AND EPITAXIAL LAYERS OF GaN AND Ga 1-x-y?Al x?In y?N |
| 01/19/2000 | EP0972095A1 Crucible and method of preparation thereof |
| 01/19/2000 | EP0972094A1 Low defect density, vacancy dominated silicon |
| 01/18/2000 | US6015590 Surface with thin films on substrate of multilayer element with vapor deposition |
| 01/18/2000 | US6015460 Method and apparatus for pulling a monocrystal |
| 01/18/2000 | CA2053180C Method and apparatus for producing synthetic diamond structures |
| 01/13/2000 | WO2000002240A1 METHOD FOR SYNTHESIZING SINGLE CRYSTAL AlN THIN FILMS OF LOW RESISTANT n-TYPE AND LOW RESISTANT p-TYPE |
| 01/13/2000 | WO2000001867A1 Method for synthesizing n-type diamond having low resistance |
| 01/13/2000 | WO2000001727A1 Seeding crystals for the preparation of peptides or proteins |
| 01/13/2000 | DE19830785A1 Stütztiegel zur Stützung von Schmelztiegeln Support crucible in support of crucibles |
| 01/13/2000 | CA2336112A1 Seeding crystals for the preparation of peptides or proteins |
| 01/12/2000 | EP0971054A1 Support crucible for supporting melt crucibles |
| 01/11/2000 | US6013872 High purity |
| 01/11/2000 | US6013191 Bombarding the surface of the film with ions from oxygen plasma and fluorinated gas mixture at first power density to form reaction sites; reacting film's surface with the ions at second lower power density to smooth surface of diamond film |
| 01/11/2000 | US6013129 Production of heavily-doped silicon |
| 01/06/2000 | WO2000000676A1 Electrical resistance heater for crystal growing apparatus and its method of use |
| 01/06/2000 | WO2000000675A1 Crystal puller for growing low defect density, self-interstitial dominated silicon |
| 01/06/2000 | WO2000000674A2 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 01/05/2000 | EP0969527A1 Oxide superconductor of high critical current density |
| 01/05/2000 | EP0969499A2 Crystal growth process for a semiconductor device |
| 01/05/2000 | EP0969120A2 Method and apparatus for plasma deposition |
| 01/05/2000 | EP0968054A1 Catalysts with modified molybdenum oxycarbide base prepared from oriented molybdenum and method for producing same |
| 01/05/2000 | EP0515682B1 Thin film of lithium niobate single crystal |
| 01/05/2000 | CN1048044C Improved method for growing silicon crystal |
| 12/30/1999 | DE19929184A1 Radio frequency plasma enhanced chemical vapor deposition of diamond like films onto medical devices such as catheter wires |
| 12/30/1999 | DE19828310A1 Single crystal semiconductor powder, for making monograin membranes useful in photovoltaic devices |
| 12/29/1999 | WO1999067449A1 Monocrystalline powder and monograin membrane production |
| 12/29/1999 | EP0787363B1 Multilayered composites and process of manufacture |