| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 03/15/2001 | WO2001018285A1 Silicon wafer and method for manufacturing the same |
| 03/14/2001 | EP1083161A1 Organometallic compounds for vapor-phase epitaxy of organometal |
| 03/14/2001 | CN1287575A High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same |
| 03/13/2001 | US6200917 Colorless silicon carbide gemstones |
| 03/13/2001 | US6200652 Method for nucleation and deposition of diamond using hot-filament DC plasma |
| 03/13/2001 | US6200384 Method for production of silicon single crystal |
| 03/13/2001 | US6200383 Melt depth control for semiconductor materials grown from a melt |
| 03/08/2001 | WO2001017024A1 Fabrication method for pasted soi wafer and pasted soi wafer |
| 03/08/2001 | WO2001016412A1 Floating/melting using dummy micro-gravitational field by magnetic force |
| 03/08/2001 | WO2001016411A1 FERROMAGNETIC p-TYPE SINGLE CRYSTAL ZINC OXIDE AND METHOD FOR PREPARATION THEREOF |
| 03/08/2001 | WO2001016410A1 Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer |
| 03/08/2001 | WO2001016408A1 Epitaxial silicon wafer |
| 03/08/2001 | WO2001016406A1 Process for preparing single crystal silicon having uniform thermal history |
| 03/07/2001 | EP1081207A1 Single-crystalline film and process for production thereof |
| 03/06/2001 | US6198208 Thin film piezoelectric device |
| 03/06/2001 | US6198119 Ferroelectric element and method of producing the same |
| 03/06/2001 | US6197109 Method for producing low defect silicon single crystal doped with nitrogen |
| 03/06/2001 | CA2225620C Process for the preparation of magnesium oxide films using organomagnesium compounds |
| 03/01/2001 | WO2001014619A1 Method and device for depositing materials with a large electronic energy gap and high binding energy |
| 03/01/2001 | WO2001014050A1 High pressure/high temperature production of colored diamonds |
| 03/01/2001 | CA2382785A1 High pressure/high temperature production of colored diamonds |
| 02/28/2001 | EP1079007A2 Single crystal SiC composite material for producing a semiconductor device and a method of producing the same |
| 02/28/2001 | EP1059976A4 Dynamically controlled crystallization method and apparatus and crystals obtained thereby |
| 02/28/2001 | CN1285422A Method for removing heavy metal impurity from monocrystal silicon |
| 02/27/2001 | US6194753 Method of forming a perovskite structure semiconductor capacitor |
| 02/22/2001 | WO2001012884A1 p-TYPE SINGLE CRYSTAL ZINC OXIDE HAVING LOW RESISTIVITY AND METHOD FOR PREPARATION THEREOF |
| 02/22/2001 | DE19939715A1 Claw for pulling single crystals has arms with holding jaws arranged on the side of the crystal block opposite the tilting bearings |
| 02/22/2001 | DE10039397A1 Production of a piezoelectric ceramic used e.g. for ceramic filters and resonators comprises heating a ceramic mixture to a temperature lying above the melting point of the mixture, and cooling and solidifying the molten mixture |
| 02/21/2001 | CN1285009A Crystal growing apparatus with melt-doping facility |
| 02/21/2001 | CN1284573A Crystal growth container and method |
| 02/21/2001 | CN1062320C Self-modulating laser crystal Cr(4+). Yb(3+) Y3A15012 |
| 02/21/2001 | CN1062318C Alumoberyl family decorative jewel growth method and device |
| 02/20/2001 | US6191073 High temperature superconductive layer bonded to nonsuperconducting layer of mixed oxide containing barium, strontium and terbium |
| 02/20/2001 | US6191009 Method for producing silicon single crystal wafer and silicon single crystal wafer |
| 02/20/2001 | US6190925 Epitaxially grown lead germanate film and deposition method |
| 02/20/2001 | US6190631 Low defect density, ideal oxygen precipitating silicon |
| 02/20/2001 | US6190453 Growth of epitaxial semiconductor material with improved crystallographic properties |
| 02/20/2001 | US6190452 Silicon single crystal wafer and method for producing it |
| 02/20/2001 | CA2127832C Cvd diamond radiation detector |
| 02/15/2001 | WO2000063961B1 Dual process semiconductor heterostructures and methods |
| 02/15/2001 | DE19938340C1 Production of semiconductor wafer comprises simultaneously polishing the front and rear sides of wafer between rotating polishing plates using an alkaline polishing sol and then an alcohol, cleaning, drying and applying an epitaxial layer |
| 02/15/2001 | DE19936838A1 Production of a single crystal doped with nitrogen comprises using a dopant in powdered form containing nitride-bound silicon |
| 02/15/2001 | DE10036672A1 Gallium arsenide single crystal wafer has surfaces formed as a substrate for growing an n-type layer and a p-type layer by means of liquid phase epitaxy using silicon as amphoteric dopant |
| 02/14/2001 | EP1076120A1 Method for producing silicon single crystal |
| 02/14/2001 | CN1284146A Flushable fiber structure |
| 02/14/2001 | CN1284008A Crystal growth |
| 02/14/2001 | CN1283712A High-pressure sinter process for synthosizing large-size polymer crystal |
| 02/14/2001 | CN1062034C Prodn. of semiconductor grade silicon sphere from metallurgical silicon particles using air ambient |
| 02/14/2001 | CN1062033C Sulfo cyanic-acid-matches type crystal material, its prepn. method and use thereof |
| 02/13/2001 | US6187279 Used as a semiconductor substrate wafer for a light-emitting diode, an x-ray optical element such as a monochromatic sorter, a high-temperature semiconductor electronic element, and a power device. |
| 02/13/2001 | US6187213 Marking diamond |
| 02/13/2001 | US6187091 Apparatus and process for growing silicon epitaxial layer |
| 02/13/2001 | US6187089 Depositing tungsten on the inside surface of the crucible and diffusing the tungsten into the inside surface and depositing tungsten on the outside surface of the crucible and diffusing the tungsten into the outside surface |
| 02/13/2001 | CA2230262C Silicon carbide gemstones |
| 02/08/2001 | WO2001009411A1 Method of manufacturing crystal of silicon using an electric potential |
| 02/08/2001 | WO2000055394A8 Barium doping of molten silicon for use in crystal growing process |
| 02/07/2001 | EP1074872A2 Magnetic garnet single crystal and faraday rotator using the same |
| 02/07/2001 | EP1074643A1 Single-crystal silicon wafer having few crystal defects and method for manufacturing the same |
| 02/07/2001 | EP1074641A1 Crystal growth vessel and crystal growth method |
| 02/07/2001 | CN1282967A Magnetic garnet monocrystal and Farady rotor using said monocrystal |
| 02/07/2001 | CN1282801A Chemical vapour phase deposition equipment and method of synthesizing nanometer pipe using said equipment |
| 02/07/2001 | CN1061705C Precision control oxygen precipitation in silicone |
| 02/07/2001 | CN1061704C Method for preparing monocrystal of nickel-aluminium based metal material |
| 02/07/2001 | CN1061702C Oxide coated cutting tool |
| 02/06/2001 | US6184059 Process of making diamond-metal ohmic junction semiconductor device |
| 02/06/2001 | US6183555 Surface acoustic wave device, substrate therefor, and method of manufacturing the substrate |
| 02/06/2001 | US6183554 Cleaned surface adsorbs polar compound |
| 02/06/2001 | US6183553 Process and apparatus for preparation of silicon crystals with reduced metal content |
| 02/06/2001 | US6183552 Vapor deposition |
| 01/31/2001 | EP1073089A1 Mn2+ activated green emitting SrAl12O19 luminescent material |
| 01/31/2001 | EP1072693A1 Chemical vapor deposition apparatus and method of synthesizing carbon nanotubes using the apparatus |
| 01/31/2001 | CN1282386A Growth of very uniform silicon carbide external layers |
| 01/31/2001 | CN1282111A Semiconductor laminated substrate, crystal substrate and semiconductor device and manufacturing method thereof |
| 01/31/2001 | CN1281910A Preparation method of nanometer silicon carbide whiskers |
| 01/31/2001 | CN1061387C Method for forming diamond-like carbon film (DLC), DLC film formed thereby, use of the same, field emitter array and field emitter cattodes |
| 01/30/2001 | US6180872 Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member |
| 01/30/2001 | US6180269 GaAs single crystal substrate and epitaxial wafer using the same |
| 01/30/2001 | US6180220 Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| 01/30/2001 | US6179913 Compound gas injection system and methods |
| 01/30/2001 | US6179911 Method for manufacturing single crystal |
| 01/30/2001 | US6179910 Pulling |
| 01/30/2001 | CA2202026C Method of making a diamond-coated composite body |
| 01/25/2001 | WO2001006545A2 ENHANCED n TYPE SILICON MATERIAL FOR EPITAXIAL WAFER SUBSTRATE AND METHOD OF MAKING SAME |
| 01/25/2001 | WO2001006044A1 Growth of epitaxial semiconductor material with improved crystallographic properties |
| 01/25/2001 | WO2001006042A1 Method for single crystal growth of barium titanate and barium titanate solid solution |
| 01/24/2001 | EP1071141A2 Diamond semiconductor and method for the fabrication thereof. |
| 01/24/2001 | EP1070161A1 A method and a device for epitaxial growth of objects by chemical vapour deposition |
| 01/24/2001 | CN1281247A Epitaxial growth method of semiconductor on substrate with high mismatched lattices |
| 01/24/2001 | CN1281245A Method of making semiconductor structure containing metal oxide interface of silicone |
| 01/23/2001 | US6177856 Process for producing a current limiter having a high-temperature superconductor, and current limiter |
| 01/23/2001 | US6177688 Low defect densities |
| 01/23/2001 | US6177358 Photo-stimulated etching of CaF2 |
| 01/23/2001 | US6177292 Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate |
| 01/18/2001 | WO2001004391A1 Sublimation growth method for an sic monocrystal with growth-pressure heating |
| 01/18/2001 | WO2001004390A1 Seed crystal holder with a lateral border for an sic seed crystal |
| 01/18/2001 | WO2001004389A1 Sic monocrystal sublimation growth device with a film-covered crucible |
| 01/18/2001 | WO2001004388A2 Edge meniscus control of crystalline ribbon growth |
| 01/18/2001 | DE19932541A1 Production of a membrane used in sensors comprises applying an n-doped epitaxial layer on the front side of a p-doped silicon substrate, and etching a recess in the rear side of the substrate |
| 01/18/2001 | DE10026319A1 Single crystalline body production comprises preparing substrate, forming seed crystal part on surface of substrate and contacting seed crystal part with solution containing chemical element in saturation |
| 01/17/2001 | EP1069605A2 Method for fabricating a semiconductor structure including a metal oxide interface with silicon |