| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 05/09/2001 | EP1097982A1 Process for producing crystalline film |
| 05/09/2001 | EP1097262A1 Monocrystalline powder and monograin membrane production |
| 05/09/2001 | EP1097251A1 System and method for reducing particles in epitaxial reactors |
| 05/09/2001 | EP0802988B1 Method of forming diamond-like carbon film (dlc) |
| 05/09/2001 | CN1294542A Diamond cutting tool |
| 05/09/2001 | CN1065571C Method and appts. for orientation growth of lithium ferrous niobate by electric field induction |
| 05/08/2001 | US6228165 Method of manufacturing crystal of silicon using an electric potential |
| 05/08/2001 | US6228164 Process for producing a single crystal |
| 05/08/2001 | US6226858 Method of manufacturing an oxide superconductor wire |
| 05/03/2001 | WO2001031659A2 THIN FILM Hg-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION THEREOF |
| 05/03/2001 | WO2001030689A1 Nanostructures, their applications and method for making them |
| 05/03/2001 | US20010000759 Substrate handling chamber |
| 05/03/2001 | CA2389454A1 Thin film hg-based superconductors, thermoelectric materials and methods of fabrication thereof |
| 05/02/2001 | EP1096042A1 Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| 05/02/2001 | CN1293152A Process and equipment for purifying silver halide as raw material of optical fibre in reaction chlorine gas |
| 05/02/2001 | CN1065289C Water heating growth method for preparing adulterated vanadate single crystal |
| 05/02/2001 | CN1065288C Scintillation material on base of cesium iodide and method for its preparation |
| 05/01/2001 | US6226128 Light-transmitting optical member, manufacturing method thereof, evaluation method therefor, and optical lithography apparatus using the optical member |
| 05/01/2001 | US6225182 Simplified high Q inductor substrate |
| 05/01/2001 | CA2210033C A method of suppressing convection in a fluid in a cylindrical vessel |
| 04/26/2001 | WO2001029893A1 Method for depositing nanolaminate thin films on sensitive surfaces |
| 04/26/2001 | WO2001029293A1 Polycrystalline thin film and its production, and oxide superconductor and method for its production |
| 04/26/2001 | WO2001029292A1 Method of controlling growth of a semiconductor crystal |
| 04/26/2001 | WO2001029280A1 Deposition of transition metal carbides |
| 04/24/2001 | US6221493 Post treated diamond coated body |
| 04/24/2001 | US6221156 Apparatus for growing a semiconductor crystal |
| 04/24/2001 | US6221155 Chemical vapor deposition system for polycrystalline silicon rod production |
| 04/24/2001 | CA2207235C Large-scale, low pressure plasma-ion deposition of diamondlike carbon films |
| 04/19/2001 | WO2001027972A2 Molecular scale electronic devices |
| 04/19/2001 | WO2001027361A1 Method and apparatus for growing silicon carbide crystals |
| 04/19/2001 | WO2001027347A1 Method of depositing transition metal nitride thin films |
| 04/19/2001 | WO2001027346A1 Method of modifying source chemicals in an ald process |
| 04/19/2001 | CA2404832A1 Molecular scale electronic devices |
| 04/18/2001 | EP1091979A1 Seeding crystals for the preparation of peptides or proteins |
| 04/18/2001 | CN1291965A Method and apparatus for preparing crystal of cremated remains |
| 04/18/2001 | CN1064723C Method for preparing neodymium barium copper oxygen superconductive monocrystal |
| 04/17/2001 | US6218702 Microcrystal silicon film and its manufacturing method, and photoelectric conversion device and its manufacturing method |
| 04/17/2001 | US6218680 Semi-insulating silicon carbide without vanadium domination |
| 04/17/2001 | US6218212 Apparatus for growing mixed compound semiconductor and growth method using the same |
| 04/17/2001 | US6217843 Heating metal compound with water in vacuum |
| 04/17/2001 | US6217842 Single crystal SIC and method of producing the same |
| 04/17/2001 | US6217659 Dynamic blending gas delivery system and method |
| 04/17/2001 | US6217649 Continuous melt replenishment for crystal growth |
| 04/17/2001 | US6217648 Single crystal pull-up apparatus and single crystal pull-up method |
| 04/17/2001 | US6217647 Method for producing a monocrystalline layer of a conducting or semiconducting material |
| 04/12/2001 | WO2001025001A1 Beads of polycrystalline alkali-metal or alkaline-earth metal fluoride, their preparation and their use |
| 04/12/2001 | WO2001024921A1 Crystalline gallium nitride and method for forming crystalline gallium nitride |
| 04/12/2001 | WO2001024920A1 Growth of diamond clusters |
| 04/12/2001 | CA2385713A1 Crystalline gallium nitride and method for forming crystalline gallium nitride |
| 04/11/2001 | EP1090169A1 Crystal puller for growing low defect density, self-interstitial dominated silicon |
| 04/11/2001 | EP1090168A1 Electrical resistance heater for crystal growing apparatus and its method of use |
| 04/11/2001 | EP1090167A1 Process and apparatus for preparation of silicon crystals with reduced metal content |
| 04/11/2001 | EP1090166A1 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 04/11/2001 | EP1004899A4 Scintillating substance and scintillating wave-guide element |
| 04/11/2001 | EP0832310A4 Electrically tunable coatings |
| 04/11/2001 | CN1290982A Method for preparing super lattice quasi-period structure dielectric material and equipment |
| 04/10/2001 | US6214109 Apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic |
| 04/05/2001 | WO2001023648A1 Apparatus and method for forming single crystalline nitride substrate using hydride vapor phase epitaxy and laser beam |
| 04/05/2001 | WO2001023647A1 Growth in solution in a float zone of crystals of a compound or of an alloy |
| 04/05/2001 | WO2000022204A9 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 04/05/2001 | US20010000093 Silicon single crystal wafer and a method for producing it |
| 04/04/2001 | EP1088912A1 Growth in solution of compound or alloy crystals in a floating zone |
| 04/04/2001 | EP1088340A1 Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls |
| 04/04/2001 | EP1087857A1 Diamond cutting tool |
| 04/04/2001 | EP0879305B1 Growth of colorless silicon carbide crystals |
| 04/04/2001 | CN1289867A Hot liquid method for growing monocrystal of gallium nitride |
| 04/03/2001 | US6210780 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device |
| 04/03/2001 | US6210605 May be used as a display device or lamp phosphor or as an x-ray diagnostic or laser scintillator |
| 04/03/2001 | US6210477 Methods for pulling a single crystal |
| 03/29/2001 | WO2001022482A1 Method of producing relaxed silicon germanium layers |
| 03/29/2001 | WO2001021865A1 Method for producing czochralski silicon free of agglomerated self-interstitial defects |
| 03/29/2001 | WO2001021861A1 Czochralski process for growing single crystal silicon by controlling the cooling rate |
| 03/29/2001 | WO2000033388A9 METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES |
| 03/29/2001 | WO1999058925A8 Cantilever with whisker-grown probe and method for producing thereof |
| 03/29/2001 | DE10027176A1 Quarzglas-Schmelztiegel und Verfahren zu seiner Herstellung Quartz glass crucible and a process for its preparation |
| 03/28/2001 | EP1087427A2 Selective growth process for group III-nitride-based semiconductors |
| 03/28/2001 | EP1087042A1 Silicon wafer |
| 03/27/2001 | US6207891 Columnar-grained polycrystalline solar cell substrate |
| 03/27/2001 | US6207082 Layer-structured oxide and process of producing the same |
| 03/27/2001 | US6206969 Method and apparatus for fabricating semiconductor |
| 03/27/2001 | US6206961 Method of determining oxygen precipitation behavior in a silicon monocrystal |
| 03/22/2001 | WO2000074107A3 Tip structures, devices on their basis, and methods for their preparation |
| 03/22/2001 | WO2000056956A8 Method and apparatus for controlling diameter of a silicon crystal in a growth process |
| 03/21/2001 | EP1085562A2 Apparatus and method for surface finishing a silicon film |
| 03/21/2001 | EP1085559A2 Apparatus for producing polycrystalline silicon sheets and production method using the same |
| 03/21/2001 | EP1084514A1 GaP-SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING THE SAME |
| 03/21/2001 | EP1084286A1 Electrical resistance heater for crystal growing apparatus |
| 03/21/2001 | EP0931184B1 Process for actively controlling defects during gaas crystal growth |
| 03/21/2001 | CN1288443A Si Ge crystal |
| 03/21/2001 | CN1288079A Method for growth of gallium nitride monomorph using fused salt method |
| 03/21/2001 | CN1288078A Method for synthesis of well-dispersed and super fine anion laminated material |
| 03/21/2001 | CN1287988A Method for mfg. piezoelectric ceramics |
| 03/20/2001 | US6204188 Heat treatment method for a silicon wafer and a silicon wafer heat-treated by the method |
| 03/20/2001 | US6204152 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| 03/20/2001 | US6203772 Heat treatment, crystallization, complexing; semiconductors |
| 03/20/2001 | US6203728 To decrease an absorption coefficient for a light in a blue light range; optics |
| 03/20/2001 | US6203658 Processing system and method for making spherical shaped semiconductor integrated circuits |
| 03/20/2001 | US6203611 Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth |
| 03/20/2001 | US6203610 Device and a process for monitoring a melt for the production of crystals |
| 03/15/2001 | WO2001018287A1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME |