| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 06/20/2000 | US6077342 Single crystal formed by the czochralski method and having a crystallographic axis as a pulling direction set within an angle range of 30 degrees from a b-axis (010) direction; substrate for uniform gallium nitride semiconductor thin film |
| 06/20/2000 | CA2204086C Production of diamond film |
| 06/15/2000 | WO2000034989A1 Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates |
| 06/15/2000 | WO2000034553A1 Silicon wafer and method of manufacture thereof |
| 06/15/2000 | WO2000034552A1 Single crystal processing by in-situ seed injection |
| 06/14/2000 | EP1008677A1 Method for the conversion of polycrystalline carbon |
| 06/14/2000 | EP1008553A1 Surface functionalized diamond crystals and methods for producing same |
| 06/14/2000 | EP1007771A1 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |
| 06/14/2000 | EP1007768A2 Elimination of thermal mismatch defects in epitaxially deposited films through the separation of the substrate from the film at the growth temperature |
| 06/14/2000 | CN2382726Y Crystallizing room of adjustable vapour phase diffusion for protein crystal growth |
| 06/14/2000 | CN1256724A Crucible and method of preparation thereof |
| 06/14/2000 | CN1256723A Low defect density, ideal oxygen precipitating silicon |
| 06/13/2000 | US6074768 Process for forming the oxide superconductor thin film and laminate of the oxide superconductor thin films |
| 06/13/2000 | US6074477 Process and an apparatus for producing a composite oxide single crystal body |
| 06/08/2000 | WO2000033388A1 METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES |
| 06/08/2000 | WO2000033365A1 Fabrication of gallium nitride layers by lateral growth |
| 06/08/2000 | WO2000032853A1 Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same |
| 06/08/2000 | WO2000007221A3 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots |
| 06/07/2000 | CN1255556A Single crystal transition control |
| 06/06/2000 | US6072164 Heat-treating method and radiant heating device |
| 06/06/2000 | US6072118 Process and apparatus for growing crystalline silicon plates by pulling the plate through a growth member |
| 06/06/2000 | US6071349 Gas supplying apparatus and vapor-phase growth plant |
| 06/06/2000 | US6071341 Apparatus for fabricating single-crystal silicon |
| 06/06/2000 | US6071338 Method for crystal growth of multi-element oxide thin film containing bismuth as constituent element |
| 06/02/2000 | WO2000031325A1 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer |
| 06/02/2000 | WO2000031324A1 Single-crystal silicon wafer having few crystal defects and method for manufacturing the same |
| 06/02/2000 | WO2000031322A1 Method for epitaxial growth on a substrate |
| 06/02/2000 | WO2000031317A1 Reactor and method for chemical vapour deposition |
| 06/02/2000 | WO2000030975A1 SiGe CRYSTAL |
| 05/31/2000 | EP1004899A1 Scintillating substance and scintillating wave-guide element |
| 05/31/2000 | EP1004690A1 Single crystal conversion control |
| 05/31/2000 | CN1255170A Process of diamond growth from C70 |
| 05/31/2000 | CN1255169A Low defect density, ideal oxygen precipitating silicon |
| 05/31/2000 | CN1053021C Aluminium tetraborate gadolinium crystal blended with rare earth and growth method thereof |
| 05/30/2000 | US6069682 Spherical shaped semiconductor integrated circuit |
| 05/30/2000 | US6069369 Superconducting device |
| 05/30/2000 | US6068699 Apparatus for fabricating semiconductor single crystal |
| 05/25/2000 | DE19854235A1 Continuous combustible metallurgical dust passivation, especially in Czochralski silicon single crystal growth units, comprises controlled dust oxidation in off-gas stream |
| 05/24/2000 | EP1002335A4 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| 05/24/2000 | EP1002335A1 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| 05/24/2000 | EP1002144A1 Method and system for controlling growth of a silicon crystal |
| 05/23/2000 | US6066306 Silicon single crystal wafer having few crystal defects, and method RFO producing the same |
| 05/17/2000 | EP1001055A1 Gas turbine component |
| 05/16/2000 | US6063736 Oxide superconductor of high critical current density |
| 05/16/2000 | US6063513 Silicon carbide(sic) top layer, surface processed to be a specular surface, and having a defect-free sic crystal layer at given depth from the specular surface; resistant to high energy beams for use such as reflecting mirrors |
| 05/16/2000 | US6063443 Vapor deposition |
| 05/16/2000 | US6063189 Mechanism for clamping a crystal body in a crystal-body lifting device |
| 05/16/2000 | US6063186 Growth of very uniform silicon carbide epitaxial layers |
| 05/16/2000 | US6063185 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy |
| 05/16/2000 | CA2057490C Laminated diamond substrate |
| 05/11/2000 | WO2000026446A1 Method and system for measuring polycrystalline chunk size and distribution in the charge of a czochralski process |
| 05/11/2000 | WO2000026422A1 High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same |
| 05/10/2000 | EP0830218A4 Structures having enhanced biaxial texture and method of fabricating same |
| 05/09/2000 | US6061174 Image-focusing optical system for ultraviolet laser |
| 05/09/2000 | US6059878 Liquid phase epitaxial; hydrogen reduction |
| 05/04/2000 | WO2000025354A1 Polycrystalline silicon thin film forming method and thin film forming apparatus |
| 05/03/2000 | EP0996967A2 Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method |
| 05/03/2000 | EP0745147B1 Method and apparatus for coating a substrate |
| 05/02/2000 | US6056931 Silicon wafer for hydrogen heat treatment and method for manufacturing the same |
| 05/02/2000 | US6056819 Method for pulling a single crystal |
| 05/02/2000 | US6056818 Method of manufacturing a silicon monocrystal, and method of holding the same |
| 05/02/2000 | CA2064232C Superconducting metal oxide compositions and processes for manufacture and use |
| 04/26/2000 | EP0995821A1 Method and apparatus for working semiconductor material |
| 04/26/2000 | EP0995820A1 Fluoride refining method and fluoride crystal manufacturing method, and optical part and aligner using same |
| 04/26/2000 | EP0994973A1 Apparatus and method for nucleation and deposition of diamond using hot-filament dc plasma |
| 04/26/2000 | CN1251625A Lanthanum gallium silicate disc and its preparation method |
| 04/25/2000 | US6053975 Crystal holding apparatus |
| 04/25/2000 | US6053974 Heat shield for crystal puller |
| 04/25/2000 | US6053973 Single crystal SiC and a method of producing the same |
| 04/20/2000 | WO2000022204A2 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride:silicon carbide alloys |
| 04/20/2000 | WO2000022203A2 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy |
| 04/20/2000 | WO2000022201A1 Method and apparatus for accurately pulling a crystal |
| 04/20/2000 | WO2000022200A1 Method and system for controlling growth of a silicon crystal |
| 04/20/2000 | WO2000022199A1 Electrode assembly for electrical resistance heater used in crystal growing apparatus |
| 04/20/2000 | WO2000022197A1 Epitaxial silicon wafers substantially free of grown-in defects |
| 04/20/2000 | WO2000022196A1 Process for preparing defect free silicon crystals which allows for variability in process conditions |
| 04/20/2000 | WO2000022195A2 Production of bulk single crystals of silicon carbide |
| 04/20/2000 | WO2000021905A1 Three dimensionally periodic structural assemblies on nanometer and longer scales |
| 04/20/2000 | DE19847695A1 Single crystal, especially silicon single crystal, is grown under neck growth conditions of high pulling speed relative to the phase boundary axial temperature gradient |
| 04/20/2000 | DE19847098A1 Verfahren und Vorrichtung zur Bearbeitung von Halbleitermaterial Method and apparatus for processing semiconductor material |
| 04/19/2000 | EP0994502A2 Dynamic blending gas delivery system and method |
| 04/19/2000 | CN1251206A Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| 04/19/2000 | CN1051554C Metalorganic compounds |
| 04/19/2000 | CN1051553C Preparation of metalorganic compounds for growing epitaxial semiconductor layers |
| 04/18/2000 | US6052042 Magnetostatic wave device |
| 04/18/2000 | US6051062 Producing an optical single crystal epitaxial film from a melt containing a transition metal on a single crystal substrate by a liquid phase epitaxial method |
| 04/18/2000 | CA2061302C Method of making synthetic diamond film |
| 04/13/2000 | WO2000020664A1 Continuous oxidation process for crystal pulling apparatus |
| 04/12/2000 | EP0993235A2 Thin film forming method, display, and color filter |
| 04/12/2000 | EP0992072A1 Controlled conversion of metal oxyfluorides into superconducting oxides |
| 04/12/2000 | EP0868753B1 Layer sequence with at least one epitaxial, non-c-axis oriented htsc thin film or with a layer of a structure crystallographically comparable to htsc |
| 04/12/2000 | CN2373459Y Filament frock for batch producing CVD diamond slice |
| 04/12/2000 | CN1250526A Scintillating substance and scintillating wave-guide element |
| 04/12/2000 | CN1250115A Self-frequency doubling laser crystal of Nd-doped low temperature phase lanthanum-scandium borate |
| 04/11/2000 | US6048813 Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys |
| 04/11/2000 | US6048737 Forming conductive oxide layer between a metal electrode and a ferroelectric layer, capable of enhancing the fatigue behavior in addition to reducing the leakage current |
| 04/11/2000 | US6048398 Device for epitaxially growing objects |
| 04/11/2000 | US6048396 Method for producing calcite-type calcium carbonate single crystal |
| 04/11/2000 | US6048395 Method for producing a silicon single crystal having few crystal defects |
| 04/05/2000 | EP0990717A1 GaAs single crystal substrate and epitaxial wafer using the same |