| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 07/11/2002 | US20020088390 Protection for a carbon material, in particular C/C composite, bowl that is to receive a crucible, such as a silica crucible for drawing silicon |
| 07/11/2002 | DE10148885A1 Verfahren zur Wärmebehandlung eines Halbleiterwafers und ein Halbleiterwafer, der durch dasselbe hergestellt wird A method for heat treating a semiconductor wafer and a semiconductor wafer which is prepared by the same |
| 07/10/2002 | EP1221711A2 Plasma display panel suitable for high-quality display and production method |
| 07/10/2002 | EP1221709A2 Plasma display panel suitable for high-quality display and production method |
| 07/10/2002 | EP1221708A2 Plasma display panel suitable for high-quality display and production method |
| 07/10/2002 | EP1221178A1 Method for depositing nanolaminate thin films on sensitive surfaces |
| 07/10/2002 | EP1037704B1 Crystal growth |
| 07/10/2002 | CN1087362C Method for improving zero dislocation yield of single crystals |
| 07/09/2002 | US6417077 Edge growth heteroepitaxy processes with reduced lattice mismatch strain between a deposited semiconductor material and a semiconductor substrate |
| 07/09/2002 | US6417031 Method of manufacturing a semiconductor device |
| 07/09/2002 | US6416576 Method for producing single crystal |
| 07/09/2002 | CA2173273C Compositions for melt processing high temperature superconductor |
| 07/09/2002 | CA2160965C Hot corrosion resistant single crystal nickel-based superalloys |
| 07/04/2002 | WO2002052632A1 Method of heat treatment of silicon wafer doped with boron |
| 07/04/2002 | WO2001088958A3 Spontaneous pattern formation of functional materials |
| 07/04/2002 | US20020086799 Preparing method of oxide superconductor, raw material for oxide superconductor, and preparing method of raw material for oxide superconductor |
| 07/04/2002 | US20020086534 Providing template having epitaxial-initiating growth surface; sputtering Group III metal target to produce Group III metal source vapor; mixing with nigrogen-containing gas vapors; depositing to produce single-crystal Group III metal nitride |
| 07/04/2002 | US20020084461 Structure and method for fabricating III-V nitride devices utilizing the formation of a compliant substrate |
| 07/04/2002 | US20020083892 Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal |
| 07/04/2002 | US20020083885 Method for the sublimation growth of an SiC single crystal, involving heating under growth pressure |
| 07/04/2002 | US20020083858 Spontaneous pattern formation of functional materials |
| 07/04/2002 | DE10143231A1 Einkristalliner Siliziumwafer, Rohling und Herstellungsverfahren derselben Monocrystalline silicon wafer, blank and manufacturing method thereof |
| 07/03/2002 | EP1219731A1 FERROMAGNETIC p-TYPE SINGLE CRYSTAL ZINC OXIDE AND METHOD FOR PREPARATION THEREOF |
| 07/03/2002 | EP1219730A1 Method for protecting a carbon based, notably C/C composite, bowl used for holding a crucible such as a silica crucible used for pulling silicon single crystals |
| 07/03/2002 | EP1218573A1 Method and device for depositing materials with a large electronic energy gap and high binding energy |
| 07/03/2002 | EP1218572A1 Method and apparatus for growing silicon carbide crystals |
| 07/03/2002 | EP1218571A1 Process for preparing single crystal silicon having uniform thermal history |
| 07/03/2002 | EP1218095A1 Growth of diamond clusters |
| 07/03/2002 | EP0973962B1 Low defect density, ideal oxygen precipitating silicon |
| 07/03/2002 | EP0859879B1 A method for epitaxially growing objects and a device for such a growth |
| 07/03/2002 | CN1356543A Process for preparing film electrode of gold-monocrystal nano island array |
| 07/03/2002 | CN1356408A Equipment for growing raw monocrystal |
| 07/02/2002 | US6414373 Semiconductor device and method of fabricating the same |
| 07/02/2002 | US6414338 n-Type diamond and method for producing same |
| 07/02/2002 | US6413313 Apparatus for producing polycrystalline silicon sheets and production method using the same |
| 07/02/2002 | US6413312 P-type nitride iii-v, such as gallium nitride; metal organic chemical vapor deposition using an arylalkyl hydrazine nitrogen source which does not release hydrogen; high carrier concentration; no annealing; light emitting diodes; lasers |
| 07/02/2002 | US6413310 Czochralski method; slicing; heat treating; reduced grown-in defects; low haze and microroughness; semiconductor integrated circuits |
| 06/27/2002 | US20020081848 Fabrication method of nanocrystals using a focused-ion beam |
| 06/27/2002 | US20020081463 Aluminum-including III nitride film which is suitable for a light-emitting diode or a high speed integrated circuit chip |
| 06/27/2002 | US20020081440 Characterized in that laser scattering tomography defect occurrence region accounts for 80% of wafer surface area, that laser scattering tomography defects have mean size of 0.1 mu m; semiconductor, low surface defect density |
| 06/27/2002 | US20020081374 Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic |
| 06/27/2002 | US20020078992 Multicrystalline silicon having a low proportion of active grain borders |
| 06/27/2002 | US20020078881 Sputtering a group III metal in a nitrogen or ammonia environment and depositing it on a growth surface |
| 06/27/2002 | US20020078880 Vacancy, dominsated, defect-free silicon |
| 06/27/2002 | US20020078794 Ultra-coarse, monocrystalline tungsten carbide and a process for the preparation thereof, and hardmetal produced therefrom |
| 06/26/2002 | EP1216316A1 Polishing of fluoride crystal optical lenses and preforms using cerium oxide for microlithography |
| 06/26/2002 | EP1216106A1 Improved apparatus and method for growth of a thin film |
| 06/26/2002 | CN1355552A Application of YB2 monocrystal |
| 06/26/2002 | CN1355333A Method for growing titanium gem crystal |
| 06/26/2002 | CN1086742C Nickel-base superalloy |
| 06/25/2002 | US6409907 High density, substantially uniform photonic bandgap materials;electrochemically depositing a lattice material onto the colloidal crystal; high refractive index material |
| 06/25/2002 | US6409833 Insulating-containing ring-shaped heat shields and support members for Czochralski pullers |
| 06/25/2002 | US6409831 Apparatus for fabricating single crystal |
| 06/25/2002 | US6409827 Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface |
| 06/25/2002 | US6409826 Low defect density, self-interstitial dominated silicon |
| 06/20/2002 | WO2002049091A1 Anneal wafer manufacturing method and anneal wafer |
| 06/20/2002 | WO2002048434A2 Gallium nitride materials and methods for forming layers thereof |
| 06/20/2002 | US20020074552 Gallium nitride materials and methods |
| 06/20/2002 | US20020073919 Semiconductor single crystal pulling apparatus |
| 06/19/2002 | EP1215311A2 Manufacturing method of silicon carbide single crystals |
| 06/19/2002 | EP1215310A1 p-TYPE SINGLE CRYSTAL ZINC OXIDE HAVING LOW RESISTIVITY AND METHOD FOR PREPARATION THEREOF |
| 06/19/2002 | EP1215308A2 A method for fabricating a III-V nitride film and an apparatus for fabricating the same |
| 06/19/2002 | EP1215255A2 A method for producing bonded articles, bonded articles and bonding agents |
| 06/19/2002 | EP1214735A1 Method of producing relaxed silicon germanium layers |
| 06/19/2002 | EP1214190A2 Silicon carbide epitaxial layers grown on substrates offcut towards 1100 |
| 06/19/2002 | EP0973963B1 Low defect density silicon |
| 06/19/2002 | CN1086426C Prodn. method of potassium titanate whisker and fiber |
| 06/18/2002 | US6407405 Lamination structure of zno layers and znte layers alternately stacked on a substrate, wherein n is doped at least in the znte layer. |
| 06/18/2002 | US6406776 Surface functionalized diamond crystals and methods for producing same |
| 06/18/2002 | US6406589 Plasma etching in vacuum chamber using sulfur hexafluoride |
| 06/13/2002 | WO2002047147A1 Method for producing a positively doped semiconductor with large forbidden band |
| 06/13/2002 | WO2002047117A2 Preparation of nanocrystallites |
| 06/13/2002 | US20020072249 Vapor deposition of source gases of silicon and carbon under conditions to increase the growth rate of silicon carbide and reducing the defects; controlling the partial pressures and ratios; semiconductors; thin films; ingots |
| 06/13/2002 | US20020071952 Preparation of nanocrystallites |
| 06/13/2002 | US20020071949 Diamond-coated body including interface layer interposed between substrate and diamond coating, and method of manufacturing the same |
| 06/13/2002 | US20020070636 Substrate usable for an acoustic surface wave device, a method for fabricating the same substrate and an acoustic surface wave device having the same substrate |
| 06/13/2002 | US20020070427 Silicon wafer |
| 06/13/2002 | US20020069964 Interposing water-based bonding agent between first and second substrates, and forming the bonding layer by heating the water-based bonding agent which comprises alkali metal element and having a water-soluble compound dissolved |
| 06/13/2002 | US20020069818 Manufacturing method of silicon carbide single crystals |
| 06/13/2002 | DE10150413A1 Diamantbeschichteter Körper einschliesslich zwischen Substrat und Diamantbeschichtung eingefügter Grenzflächenschicht und Verfahren zu dessen Herstellung A diamond-coated body including an inserted between the substrate and diamond coating interface layer, and process for its preparation |
| 06/12/2002 | EP1038056B1 A method of growing a buffer layer using molecular beam epitaxy |
| 06/12/2002 | EP0931177B1 Post treated diamond coated body |
| 06/12/2002 | EP0829561B1 Process for producing silicon single crystal |
| 06/12/2002 | EP0673311B1 C-axis perovskite thin films grown on silicon dioxide |
| 06/12/2002 | CN1353215A Method for growing monocrystal of yttrium boride |
| 06/12/2002 | CN1086211C Process for preparing four-leg crystal whisker of zinc oxide |
| 06/11/2002 | US6404190 Optical magnetic field sensor probe |
| 06/11/2002 | US6404108 Piezoelectric actuator |
| 06/11/2002 | US6404027 High dielectric constant gate oxides for silicon-based devices |
| 06/11/2002 | US6403982 Semi-insulating silicon carbide without vanadium domination |
| 06/11/2002 | US6403219 Adhering or fixing fine particles onto core in non-peelable state; crystal growth into columnar or needle-shaped structures; calcium monohydrogen phosphate from pyrophosphoric acid and calcium hydroxide |
| 06/11/2002 | US6402850 Depositing polysilicon films having improved uniformity and apparatus therefor |
| 06/11/2002 | US6402839 System for stabilizing dendritic web crystal growth |
| 06/11/2002 | US6402838 Crystal growth vessel and crystal growth method |
| 06/11/2002 | US6402836 Method for epitaxial growth on a substrate |
| 06/11/2002 | US6402835 Process for producing a raw material powder to grow a single crystal and the single crystal |
| 06/11/2002 | US6402834 Apparatus and method for manufacturing monocrystals |
| 06/06/2002 | WO2002044444A1 Method and apparatus for producing miiin columns and miiin materials grown thereon |
| 06/06/2002 | WO2002044443A1 Methods and apparatus for producing m'n based materials |
| 06/06/2002 | WO2002022917A3 Single crystals of lead magnesium niobate-lead titanate |