C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2001
11/28/2001	CN1323924A Potassium hexatitanate whisker making process
11/28/2001	CN1075568C Nd ion doped Gd-Y vanadate laser crystal
11/27/2001	US6322891 Thermally-diffused boron diamond and its production
11/22/2001	WO2001088958A2 Spontaneous pattern formation of functional materials
11/22/2001	WO2001087896A1 Method of forming thin film of organic ammonium/inorganic lamellar perovskite compound
11/22/2001	WO2001027972A3 Molecular scale electronic devices
11/22/2001	US20010044029 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device
11/22/2001	US20010043733 Device and method for the determination of diameters of crystals
11/21/2001	EP1156136A1 Method for manufacturing an array of indented diamond cylinders
11/21/2001	EP1155171A1 Method for growing an $g(a)-sic volume single crystal
11/21/2001	EP1155170A1 Method for producing nitride monocrystals
11/21/2001	EP0836654B1 Process for the preparation of magnesium oxide films using organomagnesium compounds
11/21/2001	CN1323364A Method and system for controlling growth of a silicon crystal
11/21/2001	CN1323363A Electrode assembly for electrical resistance heater used in crystal growing apparatus
11/20/2001	US6320700 Light-transmitting optical member, manufacturing method thereof, evaluation method therefor, and optical lithography apparatus using the optical member
11/20/2001	US6320296 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device
11/20/2001	US6319730 Method of fabricating a semiconductor structure including a metal oxide interface
11/20/2001	US6319430 Preconditioned crystals of lithium niobate and lithium tantalate and method of preparing the same
11/20/2001	US6319314 Method and device for manufacturing spherical semiconductor crystals
11/20/2001	US6319313 Charging polysilicon to crucible; melting the polysilicon to form a mass of molten silicon in crucible; forming a layer of devitrified silica on inside surface of crucible in contact with molten mass, layer being nucleated by the barium
11/15/2001	WO2001086710A1 Method of producing silicon epitaxial wafers
11/15/2001	WO2001086037A1 Crystal growth apparatus and crystal growth method
11/15/2001	WO2001086036A2 A multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
11/15/2001	WO2001086035A1 Epitaxial silicon wafer free from autodoping and backside halo
11/15/2001	WO2001086033A1 Method and device for feeding arsenic dopant into a silicon crystal growing process
11/15/2001	WO2001086032A1 Fluoride crystalline optical lithography lens element blank
11/15/2001	WO2000042243A9 Process of stacking and melting polycrystalline silicon for high quality single crystal production
11/15/2001	US20010040246 GaN field-effect transistor and method of manufacturing the same
11/15/2001	US20010039916 Epitaxial silicon wafers substantially free of grown-in defects
11/14/2001	EP1154049A1 Method of manufacturing single-crystal silicon carbide
11/14/2001	EP1154048A1 Silicon wafer for epitaxial wafer, epitaxial wafer, and method of manufacture thereof
11/14/2001	EP1154046A1 Fluoride crystalline optical lithography lens element blank
11/14/2001	EP1153161A1 Tungsten doped crucible and method for preparing same
11/14/2001	EP1153000A1 Method for making a bowl in thermostructural composite material in particular for a monocrystalline silicon producing installation
11/14/2001	CN1322260A Continuous oxidation process for crystal pulling apparatus
11/14/2001	CN1321798A Continuous production process of zinc oxide whiskers and its equipment
11/13/2001	US6315970 Strength
11/13/2001	US6315828 Continuous oxidation process for crystal pulling apparatus
11/08/2001	US20010039102 Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
11/08/2001	US20010037760 Epitaxial film produced by sequential hydride vapor phase epitaxy
11/08/2001	DE10106369A1 Verfahren zur Herstellung von versetzungsfreien Silicium-Einkristallen A process for producing dislocation-free silicon single crystals
11/07/2001	EP1152458A1 Production method for silicon epitaxial wafer and silicon epitaxial wafer
11/07/2001	EP1152074A1 Silicon single crystal wafer and production method therefor
11/07/2001	EP1151155A1 Cdv method of and reactor for silicon carbide monocrystal growth
11/07/2001	EP1151154A1 Process of stacking and melting polycrystalline silicon for high quality single crystal production
11/07/2001	EP0857224A4 Durable plasma treatment apparatus and method
11/07/2001	CN1320970A Method and apparatus for mfg. compound semiconductor device
11/07/2001	CN1320725A Non-linear optical crystal of large-size high-temp zinc borophosphate and its preparing process and use
11/07/2001	CN1320723A Technique for growing Nd-doped gadolinium calcium borate crystal by crucible lowering-down method
11/07/2001	CN1074471C Method for preparation of openside nanometer carbon tube
11/07/2001	CN1074470C Method for preparing NiAl single crystal
11/06/2001	US6313013 Method and device for processing semiconductor material
11/06/2001	US6312517 Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
11/01/2001	WO2001031659A3 THIN FILM Hg-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION THEREOF
11/01/2001	WO2000057980A9 Efg crystal growth apparatus
11/01/2001	US20010036434 Single crystal silicon layer, its epitaxial growth method and semiconductor device
11/01/2001	US20010035123 Mixed oxide
10/2001
10/31/2001	EP1150360A2 Method of fabricating compound semiconductor device and apparatus for fabricating compound semiconductor device
10/31/2001	EP1149937A1 Thermally-diffused boron diamond and its production
10/31/2001	EP1149191A1 Single crystal processing by in-situ seed injection
10/30/2001	US6309767 Superconductor structure with glass substrate and high-temperature superconductor deposited thereon, current limiter device having the superconductor structure and process for producing the structure
10/30/2001	US6309557 Magnetic garnet material and faraday rotator using the same
10/30/2001	US6309554 Method for producing needle diamond-type structure
10/30/2001	US6309461 Crystal growth and annealing method and apparatus
10/30/2001	US6309458 Method for fabricating silicon thin film
10/27/2001	CA2342560A1 Method of fabricating compound semiconductor device and apparatus for fabricating compound semiconductor device
10/25/2001	WO2001057293A9 Single crystal growing device and production method of single crystal using the device and single crystal
10/25/2001	US20010033936 Silicon carbide (SiC), a polycrystalline beta-SiC layer grown on the surface of an alpha-SiC sintered base material by thermal chemical vapor deposition is heat treated to convert it into the crystal structure of the base material; mirrors
10/25/2001	US20010032580 Barium doping of molten silicon for use in crystal growing process
10/24/2001	EP1148158A2 Process for controlling thermal history of czochralski-grown silicon
10/24/2001	EP1147248A1 Device for producing single crystals
10/24/2001	EP0950125B1 Method for making a diamond-coated member and product obtained thereby
10/23/2001	US6306735 Method for producing a semiconductor wafer
10/23/2001	US6306734 Method and apparatus for growing oriented whisker arrays
10/23/2001	US6306733 Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor
10/23/2001	CA2173709C Cristallyed bead made from a supercooled product, and process for obtaining same
10/18/2001	WO2001077421A1 Method for growing semiconductor crystalline materials containing nitrogen
10/18/2001	US20010031123 Method of processing a substrate made of a ferroelectric single crystalline material
10/18/2001	US20010030316 Nitride based semiconductor device and method of forming the same
10/18/2001	US20010030291 Organic film vapor deposition method and a scintillator panel
10/18/2001	US20010029884 Method for producing a single-crystalline film
10/17/2001	EP1146150A2 Low defect density, ideal oxygen precipitating silicon
10/17/2001	EP1145294A1 Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates
10/17/2001	EP1145252A2 Epitaxial thin films
10/17/2001	EP1144737A2 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy
10/17/2001	EP1144736A1 Agglomeration of silicon powders
10/17/2001	CN1318113A Method and system for stabilizing dendritic web crystal growth
10/17/2001	CN1317479A Crystallizing process of glutaminic acid monohydrate monosodium crystal
10/16/2001	US6303094 Wherein silicon atoms are removed from a sic crystal by heating said sic crystal in a vacuum at a temperature ranging from 1200 to 2200 degrees c.
10/16/2001	US6303048 Langasite-type crystals and a method for manufacturing the same
10/16/2001	US6302959 Mn2+ activated green emitting SrAl12O19 luminescent material
10/16/2001	US6302956 Can be used in acoustic electronic frequency-selective devices in surface acoustic waves and volumetric acoustic waves.
10/11/2001	WO2001075196A1 Method and device for making substrates
10/11/2001	US20010028096 Semiconductor devices which have analog and digital circuits integrated on a common substrate
10/10/2001	EP1143503A2 Method of producing P-type nitride based III-V compound semiconductor and method of fabricating semiconductor device using the same
10/10/2001	EP1143493A2 Sublimation growth of silicon carbide crystals
10/10/2001	EP1143047A1 Wafer, epitaxial filter, and method of manufacture thereof
10/10/2001	EP1143046A1 Silicon single crystal and production method for silicon single crystal wafer
10/10/2001	EP1143042A1 Magnetic garnet single-crystal film and method of producing the same, and faraday rotator comprising the same
10/10/2001	EP1143041A1 Process for producing a planar body of an oxide single crystal

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