Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
01/2002
01/10/2002WO2002003432A2 Process for etching silicon wafers
01/10/2002WO2002002851A1 Preparation of compounds based on phase equilibria of cu-in-se
01/10/2002US20020004252 Method for manufacturing light-emitting device using a group III nitride compound semiconductor
01/10/2002CA2667783A1 A laser diode and method of manufacture of the diode using a surface gallium nitride seed
01/10/2002CA2632737A1 A laser diode and method of manufacture of the diode using a surface gallium nitride seed
01/09/2002EP1170757A2 Single-crystal ferrite fine powder
01/09/2002EP1170405A1 Silicon single crystal wafer and production method thereof and soi wafer
01/09/2002EP1170404A1 Silicon wafer and production method thereof and evaluation method for silicon wafer
01/09/2002EP1169497A1 Method and system of controlling taper growth in a semiconductor crystal growth process
01/09/2002EP1169496A1 Strontium doping of molten silicon for use in crystal growing process
01/09/2002EP0956376B1 A susceptor for a device for epitaxially growing objects and such a device
01/09/2002CN1330262A Microtome
01/09/2002CN1330173A Evaluation method for polysilicon
01/09/2002CN1077613C Continuous zinc oxide crystal whisker producing technology and equipment
01/09/2002CN1077612C Preparation method of monocrystal titanium dioxide nanometer filament
01/09/2002CN1077611C Process for preparing zinc oxide crystal whisker
01/03/2002WO2002001608A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES
01/03/2002WO2002000971A1 Silicon epitaxial wafer manufacturing method and silicon epitaxial wafer
01/03/2002WO2002000967A1 Crucible supporting device, and method and device for filling material
01/03/2002WO2000046430A3 Dendrite thickness control system for growing silicon ribbon
01/03/2002US20020000541 Optical parametric oscillator which is provided with the crystal; chemical formula CsLiB6O10, and alkali or alkaline earth metal substituted cesium lithium borate crystals
01/03/2002US20020000189 Method of pulling up silicon single crystal and method of manufacturing epitaxial wafer
01/03/2002US20020000188 Cryogenic distillation
01/03/2002US20020000187 Method of producing a silicon monocrystal
01/03/2002US20020000186 Evaluation method for polycrystalline silicon
01/02/2002EP1168428A2 High resistivity semiconductor substrate and formation method
01/02/2002EP1167587A1 Preparation of compounds based on phase equilibria of Cu-In-Se
01/02/2002EP1167485A1 CVD titanium-boron or chromium-boron coating of diamond
01/02/2002EP1049562A4 Turbine blades made from multiple single crystal cast superalloy segments
01/02/2002EP1049561A4 Turbine components comprising thin skins bonded to superalloy substrates
01/02/2002CN1329683A Simulated diamond gemstones formed of aluminum nitride and aluminium nitride silicon carbide alloys
01/02/2002CN1329682A Method and apparatus for accurately pulling crystal
01/02/2002CN1329184A Bismuth-substituted garnets thick film material and producing method thereof
01/01/2002US6334896 Single-crystal silicon wafer having few crystal defects and method for manufacturing the same
12/2001
12/27/2001WO2001099147A2 Flat cable connector for ultrasound soldering
12/27/2001WO2001098563A2 Orientation independent oxidation of silicon
12/27/2001US20010055887 Method of fabricating compound semiconductor device and apparatus for fabricating compound semiconductor device
12/27/2001US20010055871 Method of producing p-type nitride based III-V compound semiconductor and method of fabricating semiconductor device using the same
12/27/2001US20010055859 Semiconductor device and method of fabricating the same
12/27/2001US20010055689 Extruded thermoplastic barrier coating carpet backing materials used to provide a durable, highly flexible carpet backing capable of being thermoformed
12/27/2001US20010054375 Method of suppressing convection in a fluid in a cylindrical vessel
12/26/2001CN1328634A Cantilever with whisker-grown probe and method for producing thereof
12/25/2001US6333279 Method for producing silicon wafer and silicon wafer
12/20/2001WO2001096635A2 A method for producing sphere-based crystals
12/20/2001WO2001096634A1 Thick single crystal diamond layer method for making it and gemstones produced from the layer
12/20/2001WO2001096633A1 Single crystal diamond prepared by cvd
12/20/2001WO2001096238A1 SiGe CRYSTAL AND METHOD FOR PRODUCING THE SAME
12/20/2001US20010053748 Non-superconductive phases finely dispersed in rare earth, barium and copper oxide phases of different peritectic temperatures are laminated three-dimensionally, seed crystals
12/20/2001US20010053017 Optical member for vacuum ultraviolet, and aligner and device manufacture method using same
12/20/2001US20010052828 Material for bismuth substituted garnet thick film and a manufacturing method thereof
12/20/2001US20010052316 Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus
12/20/2001DE10028792A1 Messer Knife
12/19/2001EP1164620A2 Plasma display panel suitable for high-quality display and production method
12/19/2001EP1164210A2 A method of growing a semiconductor layer
12/19/2001EP0986655B1 THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS
12/19/2001EP0839098B1 Marking diamond
12/19/2001CN1327092A Device for producing high temperature silicon carbide semiconductor material
12/18/2001US6331217 Turbine blades made from multiple single crystal cast superalloy segments
12/13/2001WO2001094669A1 Polycrystalline silicon rod and method for processing the same
12/13/2001WO2001039257A3 Silicon layer highly sensitive to oxygen and method for obtaining same
12/13/2001WO2000034552A9 Single crystal processing by in-situ seed injection
12/13/2001US20010051387 Method of growing silicon crystal in liquid phase and method of producing solar cell
12/13/2001US20010051382 Method for fabricating epitaxial substrate
12/13/2001US20010050355 Strontium, ruthenium oxide
12/12/2001EP1162635A1 Material for bismuth substituted garnet thick film and a manufacturing method thereof
12/12/2001EP1162291A1 Method and apparatus for detecting melt level
12/12/2001EP1162285A2 Method and apparatus for forming diamond film
12/12/2001EP1119654A4 Crystallization tray
12/12/2001EP0947466B1 Process for producing carbon nanotubes, process for producing carbon nanotube film, and structure provided with carbon nanotube film
12/12/2001CN1326518A Process for growth of defect free silicon crystals of arbitrarily large diameters
12/12/2001CN1076055C Tunable laser crystal sapphire and emerald and the preparation and use
12/12/2001CN1076054C Non-linear optical crystal Ba2Be2B207
12/11/2001US6329674 Composite structure with a growth substrate having a diamond layer and a plurality of microelectronic components, and process for producing such a composite structure
12/11/2001US6329088 Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00>
12/11/2001US6329063 Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates
12/11/2001US6328795 Process for growth of defect free silicon crystals of arbitrarily large diameters
12/11/2001CA2223162C Electronic program guide schedule localization system and method
12/06/2001WO2001064975A3 Method and device for growing large-volume oriented monocrystals
12/06/2001US20010048114 Semiconductor substrate and semiconductor device
12/06/2001US20010047751 Method of producing device quality (a1) ingap alloys on lattice-mismatched substrates
12/06/2001US20010047749 Apparatus and method of growing single crystal of semiconductor
12/06/2001US20010047748 Charging material and holding system for the charging material
12/06/2001DE10025870A1 Einkristallstab und Verfahren zur Herstellung desselben Single crystal and method of manufacturing the same
12/06/2001DE10025863A1 Chargiergut und Halterungssystem für das Chargiergut Charging material and holder system for the charging material
12/06/2001CA2349871A1 Material for bismuth substituted garnet thick film and a manufacturing method thereof
12/05/2001EP1160851A2 Method for fabricating a multilayer semiconductor device
12/05/2001EP1160361A1 Method of manufacturing silicon carbide, silicon carbide, composite material, and semiconductor element
12/05/2001EP1160359A1 Process and appparatus for producing an oxide single crystal
12/05/2001EP0975828B1 Etching method
12/05/2001CN1075845C Non-linear optic crystal aluminium-oxygen-barium borate
12/04/2001US6325850 Method for producing a gallium nitride epitaxial layer
12/04/2001CA2073613C Diamond synthesis
11/2001
11/29/2001US20010046091 Fluoride crystalline optical lithography lens element blank
11/29/2001US20010045184 Crystal puller for growing low defect density, self-interstitial dominated silicon
11/29/2001DE10110697A1 Vorrichtung und Verfahren zum Züchten von Halbleitereinkristallen An apparatus and method for growing semiconductor single crystals
11/28/2001EP1158076A1 Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
11/28/2001EP1158075A1 Single crystal ingot and its method of production
11/28/2001EP1157428A1 Thin multi-well active layer led with controlled o doping
11/28/2001EP1021598B1 Heat shield for crystal puller
11/28/2001CN1324414A Method and system for measuring polycrystalline chunk size and distribution in the charge of a czochralski process