C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/1999
12/28/1999	US6007645 Advanced high strength, highly oxidation resistant single crystal superalloy compositions having low chromium content
12/28/1999	US6007625 Apparatus for manufacturing single crystal
12/28/1999	US6007622 Method of preparing group III-V compound semiconductor crystal
12/28/1999	CA2000626C Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same
12/23/1999	WO1999066351A1 Method of organic film deposition
12/23/1999	WO1999066108A1 Process and apparatus for preparation of silicon crystals with reduced metal content
12/23/1999	WO1999050482B1 Open-loop method and system for controlling growth of semiconductor crystal
12/23/1999	DE19922736A1 Compound semiconductor single crystal is produced by the vertical Bridgman method
12/22/1999	EP0966047A2 GaN single crystal substrate and method of producing same
12/22/1999	EP0965663A1 Composite crucible, and preparation method and regeneration method thereof
12/22/1999	EP0965662A1 Method for producing low defect silicon single crystal doped with nitrogen
12/22/1999	EP0964943A1 METHOD FOR GROWING MONOCRYSTALS OF HIGH-TEMPERATURE SUPRACONDUCTORS MADE OF RARE EARTH-CUPRATES OF FORM SE 1+x?Ba 2-x?Cu 3?O 7-$g(d)?
12/22/1999	CN1239543A Spherical shaped semiconductor integrated circuit
12/22/1999	CN1239519A Single crystal sic and process for preparing same
12/22/1999	CN1047576C Alpha-alumina macrocrystals and making process therefor
12/21/1999	US6004396 Spherical shaped semiconductor integrated circuit
12/16/1999	WO1999065068A1 Fabrication of gallium nitride semiconductor layers by lateral growth from trench sidewalls
12/16/1999	WO1999064369A1 Method and apparatus for preparing a crystal of cremated remains
12/16/1999	WO1999064353A1 Heterogeneous liquid-phase crystallisation of diamond
12/16/1999	CA2334763A1 Heterogeneous liquid-phase crystallisation of diamond
12/15/1999	EP0964084A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME
12/15/1999	EP0964083A2 Method and apparatus for growing a compound semiconductor layer
12/15/1999	EP0964082A1 Silicon single crystal wafer and a method for producing it
12/15/1999	EP0964081A2 Single crystal SiC and a method of producing the same
12/15/1999	CN1238813A Gemstones formed of silicon carbide with diamond coating
12/15/1999	CN1047413C Single crystal ingot and its producing method
12/15/1999	CN1047412C Solide state thermal conversion of polycrystalline alumina to sapphire
12/14/1999	US6001748 For use as heat sinks, electric and electronic components, such as semiconductors, optical components, components of electric equipment
12/14/1999	US6001744 Etching semiconductor crystal with aqueous solution of sulfuric acid, saturated with potassium dichromate to obtain mirror surface for epitaxial growth
12/14/1999	US6001175 Crystal producing method and apparatus therefor
12/14/1999	US6001173 Method of forming a compound semiconductor film
12/14/1999	US6001171 ST-cut and AT-cut oriented seed bodies for quartz crystal synthesis and method for making the same
12/14/1999	US6001170 Process and apparatus for the growth of single crystals
12/14/1999	CA2044543C Multi-layer superhard film structure
12/09/1999	WO1999063602A1 GaP-SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING THE SAME
12/09/1999	WO1999063133A1 Electrical resistance heater for crystal growing apparatus
12/09/1999	WO1999063132A1 Apparatus and method for manufacturing monocrystals, and monocrystal
12/08/1999	EP0962957A2 Light-emitting displays
12/08/1999	EP0962558A1 A method for producing a single-crystalline film
12/08/1999	EP0962555A1 Process for producing a single crystal
12/08/1999	CN1237771A Mg-doped high-temperature superconductor having low superconducting anisotropy and method for producing superconductor
12/08/1999	CN1237654A Preparation method of monocrystal titanium dioxide nanometer filament
12/07/1999	US5998910 Relaxor ferroelectric single crystals for ultrasound transducers
12/07/1999	US5998644 Volatile organometallic compound containing a divalent metal and a group 13 metal, process for preparing same, and process for preparing a heterometallic oxide film using same
12/07/1999	US5998338 Melting, cooling and solidifying a mixture of at least one rare rear element (including y), and ba, cu and o to crystallize a re oxide superconductor
12/07/1999	US5998313 Cesium-lithium borate crystal
12/07/1999	US5998050 Rare earth (or yttium) barium copper oxide
12/07/1999	US5997635 Method for fabricating a single-crystal semiconductor
12/07/1999	CA2177013C Spinning substrate holder for cutting tool inserts for improved arc-jet diamond deposition
12/02/1999	WO1999061685A1 Quartz glass crucible for pulling silicon monocrystal and method of manufacturing the same
12/02/1999	WO1999048338A8 Thin film forming method, display, and color filter
12/02/1999	DE19922784A1 Magnetic garnet single crystal film especially for a magnetostatic wave device e.g. a limiter or noise filter in microwave equipment
12/02/1999	DE19824566C1 GaP-Halbleiteranordnung und Verfahren zur Herstellung derselben GaP semiconductor device and method of manufacturing the same
12/02/1999	DE19823962A1 Verfahren zur Herstellung eines Einkristalls A process for producing a single crystal
12/01/1999	EP0960961A1 Method of making a quartz crystal having a particular resonant frequency
12/01/1999	EP0960957A2 Method of preparing the surface of a composite body
12/01/1999	CN1046972C Crochralski growing apparatus and device for suppressing growth striation of long large-diameter monocrystalline silicon
11/1999
11/30/1999	US5994761 Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
11/30/1999	US5993919 Method of synthesizing diamond
11/30/1999	US5993597 Single-crystal or polycrystalline silicon, which has an electric resistance of 0.0001-40 omega cm, whose crystal faces are (100), which is doped with boron or phosphorus, whose surface has been acid etched & vacuum heat treated
11/30/1999	US5993555 Apparatus and process for growing silicon epitaxial layer
11/30/1999	US5993545 Crucible for growing single crystals, process for making the same and use of the same
11/30/1999	US5993543 Method of producing plasma display panel with protective layer of an alkaline earth oxide
11/30/1999	US5993539 Method for pulling a single crystal
11/24/1999	EP0959148A2 Method for producing diamond films using a vapour-phase synthesis system
11/24/1999	EP0797688B1 Method for deposition of diamondlike carbon films
11/24/1999	CN1236481A Forming a crystalline semiconductor film on a glass substrate
11/24/1999	CN1236028A Nd ion doped Gd-Y vanadate laser crystal
11/23/1999	US5989021 Quartz crucible with large diameter for pulling single crystal and method of producing the same
11/23/1999	CA2177345C Method for the growth of industrial crystals
11/18/1999	WO1999058925A2 Cantilever with whisker-grown probe and method for producing thereof
11/17/1999	EP0956594A1 High resistivity silicon carbide substrates for high power microwave devices
11/17/1999	EP0956381A1 Apparatus for growing large silicon carbide single crystals
11/17/1999	EP0956376A1 A susceptor for a device for epitaxially growing objects and such a device
11/16/1999	US5987088 High temperature and high pressure treatment of nuclear reactor cores
11/16/1999	US5986301 Thin film capacitor with electrodes having a perovskite structure and a metallic conductivity
11/16/1999	US5985026 Seed crystal for producing monocrystals and method for producing SiC monocrystals or monocrystalline SiC layers
11/16/1999	US5985025 Semiconductor growth method
11/16/1999	US5985024 Placing seed crystal in furnace system, placing high purity silicon feedstock in receptacle, heating to melt and vaporize silicon, introducing high purity carbon-containing gas to react with vaporized silicon and deposit silicon carbide
11/16/1999	US5985023 Method for growth of a nitrogen-doped gallium phosphide epitaxial layer
11/16/1999	US5985022 Optoelectric articles and a process for producing the same
11/16/1999	US5984458 Piezoelectric thin-film element and ink-jet recording head using the same
11/10/1999	EP0955680A1 p-TYPE SEMICONDUCTOR, METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, PHOTOVOLTAIC ELEMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
11/10/1999	EP0954882A1 Product with a partially stabilized zirconium oxide substrate and a fully stabilized zirconium buffer layer and method for the production thereof
11/10/1999	EP0954623A1 Silicon carbide monocrystal growth
11/09/1999	US5982034 Multilayer; strontium, calcium, ruthenium oxide
11/09/1999	US5981443 A bicrystal substrate is formed by joining end faces of a first single crystal substrate and a second single crystal substrate, the end faces having different crystal orientation
11/09/1999	US5981057 Diamond
11/09/1999	US5980982 Coating fine diamond particles with at least one kind of solvent metal powder with organic bonding material, filling a moldings with the coated particles, compacting, heating to form thermodynamic stable diamond
11/09/1999	US5980978 Reacting a grignard reagent with a metal halide in an amine solvent
11/09/1999	US5980852 Diamond synthesis
11/09/1999	US5980631 Method for manufacturing III-V semiconductor layers containing nitrogen
11/09/1999	US5980630 Manufacturing method of single crystal and apparatus of manufacturing the same
11/09/1999	US5980629 Methods for improving zero dislocation yield of single crystals
11/03/1999	EP0954018A1 Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device
11/03/1999	EP0953658A1 Method of manufacturing semiconductor silicon single crystal wafer
11/02/1999	US5976946 Thin film formation method for ferroelectric materials
11/02/1999	US5976247 Surface-treated crucibles for improved zero dislocation performance
11/02/1999	US5976246 Process for producing silicon single crystal
10/1999
10/27/1999	EP0951631A1 Spherical shaped semiconductor integrated circuit

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