Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
---|
03/07/2002 | US20020026899 Apparatus and method for coating substrates with vacuum depositable materials |
03/07/2002 | US20020026893 Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor |
03/06/2002 | EP1184897A1 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method |
03/06/2002 | EP1184488A2 An apparatus for fabricating a III-V nitride film and a method for fabricating the same |
03/06/2002 | EP1184425A1 Method for producing hydrophobic silica fine powder |
03/06/2002 | CN1339072A Tungsten doped crucible and method for preparing same |
03/06/2002 | CN1080453C Light emitting device, wafer for light emitting device, and method of preparing same |
03/05/2002 | US6352884 Method for growing crystals having impurities and crystals prepared thereby |
02/28/2002 | WO2002017369A1 Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device |
02/28/2002 | WO2001060945A3 Scintillator crystals, method for making same, use thereof |
02/28/2002 | US20020025660 Growth of epitaxial semiconductor material with improved crystallographic properties |
02/28/2002 | US20020025288 Pyrolyzing silane compound to form a silica fine powder and hydrophobizing silica fine powder hydrophobizing the silica fine powder with an organohalosilane in a fluidization vessel |
02/28/2002 | US20020024716 Optically functional device, single crystal substrate for the device and method for its use |
02/28/2002 | US20020024163 Adding suspension of monospheres to a flat moving bed filtration membrane; moving monospheres on moving bed filtration membrane over a vacuum filtration zone to apply vacuum filtration pressure; heating and/or chemically bonding |
02/28/2002 | US20020023581 Method for growing low defect density silicon carbide |
02/27/2002 | EP1182490A2 Optically functional device, single crystal substrate for the device and method for its use |
02/27/2002 | EP1182282A1 Method of crystal growth, method of forming fine semiconductor structure, semiconductor device, and system |
02/27/2002 | EP1182281A1 Single crystal growing device and production method of single crystal using the device and single crystal |
02/27/2002 | EP1182280A1 Device and method for producing single-crystal ingot |
02/27/2002 | EP1181401A2 Semi-insulating silicon carbide without vanadium domination |
02/27/2002 | EP1044290B1 Crystal growing apparatus with melt-doping facility |
02/27/2002 | EP0826796B1 Method and equipment for growing single crystals |
02/27/2002 | CN1079847C System and method for controlling growth of silicon crystal |
02/26/2002 | US6350644 Ferroelectric thin-film device and method for producing the same |
02/26/2002 | US6350389 Method for producing porous diamond |
02/26/2002 | US6350312 Strontium doping of molten silicon for use in crystal growing process |
02/21/2002 | WO2002015253A1 Method of producing silicon wafer |
02/21/2002 | US20020020851 Heterobipolar transistor and a method of forming a SiGeC mixed crystal layer |
02/21/2002 | US20020020342 Silicon carbide single-crystals |
02/21/2002 | US20020020340 Optimized silicon wafer strength for advanced semiconductor devices |
02/21/2002 | US20020020339 Process for preparing a silicon melt |
02/21/2002 | DE10129489A1 Bewertungsmethode für polykristallines Silizium Evaluation method for polycrystalline silicon |
02/20/2002 | EP1002144B1 Method and system for controlling growth of a silicon crystal |
02/20/2002 | EP0948671B1 Method for preparation of metal intercalated fullerene-like metal chalcogenides |
02/19/2002 | US6348261 Silicon wafer |
02/19/2002 | US6348180 Surface is formed of only a n2 region which is neutral and in which the amount of precipitated oxygen (.delta.oi) is large and therefore a high gettering capability is provided. |
02/19/2002 | US6348096 Method for manufacturing group III-V compound semiconductors |
02/19/2002 | US6348094 SAW or LSAW device piezoelectric single crystal wafer and method of making |
02/19/2002 | CA2198453C Metalorganic compounds |
02/14/2002 | WO2002013246A1 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide buffer layer |
02/14/2002 | WO2001060944A3 Scintillator crystals, method for making same, use thereof |
02/14/2002 | WO2000060145A9 Method and system of controlling taper growth in a semiconductor crystal growth process |
02/14/2002 | WO2000056956A9 Method and apparatus for controlling diameter of a silicon crystal in a growth process |
02/14/2002 | US20020019117 Forming silicon layer, doping, and carbonization after formation of doped silicon substance; use as semiconductor device |
02/14/2002 | US20020017835 High-sensitivity flexible ceramic sensor |
02/14/2002 | US20020017628 Controlling particle size, magnetism |
02/13/2002 | EP1179861A2 Piezoelectric element and process for producing the same |
02/13/2002 | EP1179620A1 Silicon carbide and method of manufacturing the same |
02/13/2002 | CN1335420A Method of preparing metastable nanometer crystal through pulse laser induced liquid-solid interface reaction |
02/13/2002 | CN1335283A Monocrystalline ferrite fines |
02/07/2002 | US20020016069 Method of forming substrate |
02/07/2002 | US20020015866 Method of growing a semiconductor layer |
02/07/2002 | US20020014612 Magnetic garnet material and magnetooptical device using the same |
02/07/2002 | US20020014199 Method for growing an alpha-SiC bulk single crystal |
02/07/2002 | US20020014013 Knife |
02/06/2002 | EP1178523A1 METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE |
02/06/2002 | EP1178494A1 Oxide superconductor, method of manufacture thereof, and base material of oxide superconductor |
02/06/2002 | EP1178129A1 Polycrystalline thin film and method for preparation thereof, and superconducting oxide and method for preparation thereof |
02/06/2002 | CN1334362A Self-spread high-temp synthesis process for preparing beta-silicon nitride whisker |
02/06/2002 | CN1334360A Method for mfg. microwave device |
02/05/2002 | US6344150 Etching method |
02/05/2002 | US6344085 Device and method for producing at least one SiC single crystal |
02/05/2002 | US6344083 Process for producing a silicon melt |
02/01/2002 | WO2001011116A1 Epitaxial growing method for growing aluminum nitride and growing chamber therefor |
02/01/2002 | CA2383400A1 Epitaxial growing method for growing aluminum nitride and growing chamber therefor |
01/31/2002 | WO2001070873A3 Nanocylinder arrays |
01/31/2002 | US20020013231 A superconductor according to claim 1, comprising a copper oxide superconductor having a formulation expressed by Cu1-xMx(Ba1-y-mSryRm)2(Ca1-zMgz)n-1CunO2n+4-w (in which R is at least one landthanide and M another metal |
01/31/2002 | US20020013053 Method of producing a microwave device |
01/31/2002 | US20020011564 Method for manufacturing high-quality manganese-doped semiconductor nanocrystals |
01/31/2002 | US20020011202 Crystal growth and annealing method and apparatus |
01/30/2002 | EP1176231A2 A boride-based substrate for growing semiconducting layers thereon and a semiconductor device using the same |
01/30/2002 | EP1175519A1 Barium doping of molten silicon for use in crystal growing process |
01/30/2002 | CN1333844A Process of stacking and melting polycrystalline silicon of high quality single crystal production |
01/30/2002 | CN1078632C Low-temp, -phase barium metaborate large single crystal growing by air-cooled crystal growth |
01/30/2002 | CN1078621C Nickel-base superalloy |
01/29/2002 | CA2205918C Epitaxial growth of silicon carbide and resulting silicon carbide structures |
01/24/2002 | WO2000033365A8 Fabrication of gallium nitride layers by lateral growth |
01/24/2002 | US20020009868 Method of growing a thin film in gaseous phase and apparatus for growing a thin film in gaseous phase for use in said method |
01/24/2002 | US20020009862 Method of treating a semiconductor wafer thermally and semiconductor wafer fabricated by the same |
01/24/2002 | US20020007780 Process and apparatus for producing an oxide single crystal |
01/24/2002 | US20020007779 Low defect density, self-interstitial dominated silicon |
01/23/2002 | EP1173885A1 Dual process semiconductor heterostructures and methods |
01/23/2002 | CN1332480A Single-crystal GaN base and its manufacture |
01/22/2002 | US6341173 Device and method for the determination of diameters of crystals |
01/22/2002 | US6340657 Placing a solid starting material for the oxide high-temperature superconductor on a substrate and heating it under pressure and in oxygen atmosphere |
01/22/2002 | US6340393 Method for synthesizing n-type diamond having low resistance |
01/22/2002 | US6340390 Method for manufacturing silicon single crystal |
01/22/2002 | CA2253136C Single crystal sic and a method of producing the same |
01/22/2002 | CA2252980C Single crystal sic and a method of producing the same |
01/17/2002 | WO2002005335A1 Single crystal wafer and solar battery cell |
01/17/2002 | US20020006733 Ferroelectric film on silicon substrate |
01/17/2002 | US20020005170 Method of forming diamond film and film-forming apparatus |
01/16/2002 | EP1172464A1 Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate |
01/16/2002 | EP1171653A1 Slicing of single-crystal films using ion implantation |
01/16/2002 | EP1171652A1 Method and apparatus for controlling diameter of a silicon crystal in a growth process |
01/16/2002 | EP1171211A1 Efg crystal growth apparatus |
01/16/2002 | EP1012357B1 Non-dash neck method for single crystal silicon growth |
01/15/2002 | US6338877 Pressing or friction treatment |
01/15/2002 | US6338757 Single crystal pull-up apparatus |
01/15/2002 | US6338755 Method for producing a single crystalline member |