Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
03/2002
03/07/2002US20020026899 Apparatus and method for coating substrates with vacuum depositable materials
03/07/2002US20020026893 Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor
03/06/2002EP1184897A1 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
03/06/2002EP1184488A2 An apparatus for fabricating a III-V nitride film and a method for fabricating the same
03/06/2002EP1184425A1 Method for producing hydrophobic silica fine powder
03/06/2002CN1339072A Tungsten doped crucible and method for preparing same
03/06/2002CN1080453C Light emitting device, wafer for light emitting device, and method of preparing same
03/05/2002US6352884 Method for growing crystals having impurities and crystals prepared thereby
02/2002
02/28/2002WO2002017369A1 Method of fabricating group-iii nitride semiconductor crystal, metho of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
02/28/2002WO2001060945A3 Scintillator crystals, method for making same, use thereof
02/28/2002US20020025660 Growth of epitaxial semiconductor material with improved crystallographic properties
02/28/2002US20020025288 Pyrolyzing silane compound to form a silica fine powder and hydrophobizing silica fine powder hydrophobizing the silica fine powder with an organohalosilane in a fluidization vessel
02/28/2002US20020024716 Optically functional device, single crystal substrate for the device and method for its use
02/28/2002US20020024163 Adding suspension of monospheres to a flat moving bed filtration membrane; moving monospheres on moving bed filtration membrane over a vacuum filtration zone to apply vacuum filtration pressure; heating and/or chemically bonding
02/28/2002US20020023581 Method for growing low defect density silicon carbide
02/27/2002EP1182490A2 Optically functional device, single crystal substrate for the device and method for its use
02/27/2002EP1182282A1 Method of crystal growth, method of forming fine semiconductor structure, semiconductor device, and system
02/27/2002EP1182281A1 Single crystal growing device and production method of single crystal using the device and single crystal
02/27/2002EP1182280A1 Device and method for producing single-crystal ingot
02/27/2002EP1181401A2 Semi-insulating silicon carbide without vanadium domination
02/27/2002EP1044290B1 Crystal growing apparatus with melt-doping facility
02/27/2002EP0826796B1 Method and equipment for growing single crystals
02/27/2002CN1079847C System and method for controlling growth of silicon crystal
02/26/2002US6350644 Ferroelectric thin-film device and method for producing the same
02/26/2002US6350389 Method for producing porous diamond
02/26/2002US6350312 Strontium doping of molten silicon for use in crystal growing process
02/21/2002WO2002015253A1 Method of producing silicon wafer
02/21/2002US20020020851 Heterobipolar transistor and a method of forming a SiGeC mixed crystal layer
02/21/2002US20020020342 Silicon carbide single-crystals
02/21/2002US20020020340 Optimized silicon wafer strength for advanced semiconductor devices
02/21/2002US20020020339 Process for preparing a silicon melt
02/21/2002DE10129489A1 Bewertungsmethode für polykristallines Silizium Evaluation method for polycrystalline silicon
02/20/2002EP1002144B1 Method and system for controlling growth of a silicon crystal
02/20/2002EP0948671B1 Method for preparation of metal intercalated fullerene-like metal chalcogenides
02/19/2002US6348261 Silicon wafer
02/19/2002US6348180 Surface is formed of only a n2 region which is neutral and in which the amount of precipitated oxygen (.delta.oi) is large and therefore a high gettering capability is provided.
02/19/2002US6348096 Method for manufacturing group III-V compound semiconductors
02/19/2002US6348094 SAW or LSAW device piezoelectric single crystal wafer and method of making
02/19/2002CA2198453C Metalorganic compounds
02/14/2002WO2002013246A1 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide buffer layer
02/14/2002WO2001060944A3 Scintillator crystals, method for making same, use thereof
02/14/2002WO2000060145A9 Method and system of controlling taper growth in a semiconductor crystal growth process
02/14/2002WO2000056956A9 Method and apparatus for controlling diameter of a silicon crystal in a growth process
02/14/2002US20020019117 Forming silicon layer, doping, and carbonization after formation of doped silicon substance; use as semiconductor device
02/14/2002US20020017835 High-sensitivity flexible ceramic sensor
02/14/2002US20020017628 Controlling particle size, magnetism
02/13/2002EP1179861A2 Piezoelectric element and process for producing the same
02/13/2002EP1179620A1 Silicon carbide and method of manufacturing the same
02/13/2002CN1335420A Method of preparing metastable nanometer crystal through pulse laser induced liquid-solid interface reaction
02/13/2002CN1335283A Monocrystalline ferrite fines
02/07/2002US20020016069 Method of forming substrate
02/07/2002US20020015866 Method of growing a semiconductor layer
02/07/2002US20020014612 Magnetic garnet material and magnetooptical device using the same
02/07/2002US20020014199 Method for growing an alpha-SiC bulk single crystal
02/07/2002US20020014013 Knife
02/06/2002EP1178523A1 METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE
02/06/2002EP1178494A1 Oxide superconductor, method of manufacture thereof, and base material of oxide superconductor
02/06/2002EP1178129A1 Polycrystalline thin film and method for preparation thereof, and superconducting oxide and method for preparation thereof
02/06/2002CN1334362A Self-spread high-temp synthesis process for preparing beta-silicon nitride whisker
02/06/2002CN1334360A Method for mfg. microwave device
02/05/2002US6344150 Etching method
02/05/2002US6344085 Device and method for producing at least one SiC single crystal
02/05/2002US6344083 Process for producing a silicon melt
02/01/2002WO2001011116A1 Epitaxial growing method for growing aluminum nitride and growing chamber therefor
02/01/2002CA2383400A1 Epitaxial growing method for growing aluminum nitride and growing chamber therefor
01/2002
01/31/2002WO2001070873A3 Nanocylinder arrays
01/31/2002US20020013231 A superconductor according to claim 1, comprising a copper oxide superconductor having a formulation expressed by Cu1-xMx(Ba1-y-mSryRm)2(Ca1-zMgz)n-1CunO2n+4-w (in which R is at least one landthanide and M another metal
01/31/2002US20020013053 Method of producing a microwave device
01/31/2002US20020011564 Method for manufacturing high-quality manganese-doped semiconductor nanocrystals
01/31/2002US20020011202 Crystal growth and annealing method and apparatus
01/30/2002EP1176231A2 A boride-based substrate for growing semiconducting layers thereon and a semiconductor device using the same
01/30/2002EP1175519A1 Barium doping of molten silicon for use in crystal growing process
01/30/2002CN1333844A Process of stacking and melting polycrystalline silicon of high quality single crystal production
01/30/2002CN1078632C Low-temp, -phase barium metaborate large single crystal growing by air-cooled crystal growth
01/30/2002CN1078621C Nickel-base superalloy
01/29/2002CA2205918C Epitaxial growth of silicon carbide and resulting silicon carbide structures
01/24/2002WO2000033365A8 Fabrication of gallium nitride layers by lateral growth
01/24/2002US20020009868 Method of growing a thin film in gaseous phase and apparatus for growing a thin film in gaseous phase for use in said method
01/24/2002US20020009862 Method of treating a semiconductor wafer thermally and semiconductor wafer fabricated by the same
01/24/2002US20020007780 Process and apparatus for producing an oxide single crystal
01/24/2002US20020007779 Low defect density, self-interstitial dominated silicon
01/23/2002EP1173885A1 Dual process semiconductor heterostructures and methods
01/23/2002CN1332480A Single-crystal GaN base and its manufacture
01/22/2002US6341173 Device and method for the determination of diameters of crystals
01/22/2002US6340657 Placing a solid starting material for the oxide high-temperature superconductor on a substrate and heating it under pressure and in oxygen atmosphere
01/22/2002US6340393 Method for synthesizing n-type diamond having low resistance
01/22/2002US6340390 Method for manufacturing silicon single crystal
01/22/2002CA2253136C Single crystal sic and a method of producing the same
01/22/2002CA2252980C Single crystal sic and a method of producing the same
01/17/2002WO2002005335A1 Single crystal wafer and solar battery cell
01/17/2002US20020006733 Ferroelectric film on silicon substrate
01/17/2002US20020005170 Method of forming diamond film and film-forming apparatus
01/16/2002EP1172464A1 Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate
01/16/2002EP1171653A1 Slicing of single-crystal films using ion implantation
01/16/2002EP1171652A1 Method and apparatus for controlling diameter of a silicon crystal in a growth process
01/16/2002EP1171211A1 Efg crystal growth apparatus
01/16/2002EP1012357B1 Non-dash neck method for single crystal silicon growth
01/15/2002US6338877 Pressing or friction treatment
01/15/2002US6338757 Single crystal pull-up apparatus
01/15/2002US6338755 Method for producing a single crystalline member