Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2000
11/09/2000WO2000066816A1 Continuous melt replenishment for crystal growth
11/08/2000EP1049820A1 Method for epitaxial growth on a substrate
11/08/2000EP1049813A1 T proced
11/08/2000EP1049562A2 Turbine blades made from multiple single crystal cast superalloy segments
11/08/2000EP1049561A2 Turbine components comprising thin skins bonded to superalloy substrates
11/08/2000EP0946974A4 Forming a crystalline semiconductor film on a glass substrate
11/07/2000US6143633 In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
11/07/2000US6143267 Plate-like single crystal silicon carbide pieces are stacked while crystal orientation faces are arranged in same plane and crystal orientations are directionally unified and plate of silicon and carbon atoms is stacked on faces
11/07/2000CA2204394C Silicon-germanium-carbon compositions and processes thereof
11/02/2000EP1049149A2 Multi-phase lead germanate film and deposition method
11/02/2000EP1049147A2 Epitaxially grown lead germanate film
11/01/2000CN1272146A Heat shield for crystal puller
11/01/2000CN1272145A Apparatus and method for manufacturing monocrystals, and monocrystal
11/01/2000CN1271786A Process for preparing four-leg crystal whisker of zinc oxide
10/2000
10/31/2000USRE36936 Production of high-purity polycrystalline silicon rod for semiconductor applications
10/31/2000US6139811 Crucible including an improved die/susceptor assembly for use in edge-defined film-fed growth (efg) of hollow crystals
10/31/2000US6139643 Effusion cell for Si and molecular beam epitaxy system
10/31/2000US6139631 Crystal growth method and apparatus
10/31/2000US6139628 Method of forming gallium nitride crystal
10/26/2000WO2000063961A1 Dual process semiconductor heterostructures and methods
10/26/2000WO2000063926A1 Oxide superconductor, method of manufacture thereof, and base material of oxide superconductor
10/26/2000WO2000063466A1 Compound gas injection system and methods
10/26/2000WO2000022197A9 Epitaxial silicon wafers substantially free of grown-in defects
10/25/2000CN1271465A Method and device for producing a wafer from semiconducting material
10/25/2000CN1271463A Process for preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers
10/24/2000US6136457 Can be used as a switching device or as a memory device or the like; formed of manganese-based oxide material; exhibits insulator-to-metal transitions induced by irradiating the material with laser light
10/24/2000US6136093 Method of making GaN single crystal and apparatus for making GaN single crystal
10/24/2000US6136092 Depositing silicon dioxide powder on the inner surface of the substrate, heating to melt and form the transparent inner layer
10/24/2000US6136091 Process and apparatus for producing polycrystalline semiconductor ingot
10/24/2000US6136090 Method for producing a silicon single crystal
10/19/2000WO2000061841A1 Slicing of single-crystal films using ion implantation
10/19/2000DE19917288A1 Quarzglas-Tiegel und Herstellungsverfahren dafür Quartz glass crucible and the production method thereof
10/19/2000CA2365992A1 Slicing of single-crystal films using ion implantation
10/18/2000EP1045432A2 Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon
10/18/2000EP1045046A2 Quartz glass crucible and process for its manufacture
10/18/2000EP1044290A1 Crystal growing apparatus with melt-doping facility
10/18/2000CN1057616C Increasing the birefringence of ktp and its isomorophs for type II phase matching
10/17/2000US6133050 Coating with a liquid precursor containing a plurality of metal moieties, drying by heating and exposing to an ultraviolet radiation to increase the c-axis orientation in metal oxide layered superlattice material thin film
10/17/2000US6132816 Effecting plasma assisted chemical vapor deposition with carbon source and hydrogen gas concentration of mixed gas at first level for depositing high-quality homoepitaxial diamond thin film; depositing with concentration at second level
10/17/2000US6132506 Method for the heat treatment of ZnSe crystal
10/17/2000CA2281972C Cvd diamond radiation detector
10/17/2000CA2177012C Segmented substrate for improved arc-jet diamond deposition
10/12/2000WO2000060145A1 Method and system of controlling taper growth in a semiconductor crystal growth process
10/12/2000WO2000060144A1 Device and method for producing single-crystal ingot
10/11/2000EP1043762A1 Polycrystalline silicon thin film forming method and thin film forming apparatus
10/11/2000EP1042544A1 Growth of very uniform silicon carbide epitaxial layers
10/11/2000EP1042095A1 Substrates for superconductors
10/05/2000WO2000058245A1 Organometallic compounds for vapor-phase epitaxy of organometal
10/05/2000WO2000057980A1 Efg crystal growth apparatus
10/04/2000EP1040212A1 Charge for vertical boat growth process and use thereof
10/04/2000EP1039990A1 Fluorine-doped diamond-like coatings
10/03/2000US6127218 Methods for forming ferroelectric films using dual deposition steps
10/03/2000US6126741 Polycrystalline carbon conversion
10/03/2000CA2177645C Apparatus and method for depositing a substance with temperature control
09/2000
09/28/2000WO2000057460A1 METHOD FOR GROWING GaN COMPOUND SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR SUBSTRATE
09/28/2000WO2000056956A1 Method and apparatus for controlling diameter of a silicon crystal in a growth process
09/28/2000WO2000056954A1 Device for producing single crystals
09/28/2000WO2000022199A9 Electrode assembly for electrical resistance heater used in crystal growing apparatus
09/28/2000DE19963941A1 New borate single crystal, used especially as a wavelength converter for an UV laser, comprises an orthorhombic double alkali metal borate crystal with no central symmetry
09/28/2000DE19912484A1 Vorrichtung zur Herstellung von Einkristallen An apparatus for producing single crystals
09/27/2000EP1038056A1 A method of growing a buffer layer using molecular beam epitaxy
09/27/2000EP1038055A1 Method and apparatus for growing high purity single crystal silicon carbide
09/27/2000EP1037704A1 Crystal growth
09/27/2000CN1268194A Method and system for controlling growth of a silicon crystal
09/26/2000US6123768 Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
09/26/2000US6123765 Continuously fed single bubbler for epitaxial deposition of silicon
09/26/2000US6123764 Degassing calcium fluoride powder particles to desorb impurities from surfaces; preprocessing degassed calcium fluoride powder particles by fusing degassed calcium fluoride powder particles in crucible; refusing to grow single crystals
09/26/2000CA2182245C Process for depositing adherent diamond thin films
09/21/2000WO2000055893A1 Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
09/21/2000WO2000055396A1 Method and apparatus for detecting melt level
09/21/2000WO2000055395A1 Strontium doping of molten silicon for use in crystal growing process
09/21/2000WO2000055394A1 Barium doping of molten silicon for use in crystal growing process
09/21/2000WO2000022195A3 Production of bulk single crystals of silicon carbide
09/20/2000EP1037268A1 METHOD FOR SYNTHESIZING SINGLE CRYSTAL AlN THIN FILMS OF LOW RESISTANT n-TYPE AND LOW RESISTANT p-TYPE
09/20/2000EP1036863A1 Method for synthesizing n-type diamond having low resistance
09/20/2000CN1267398A Controlled conversion of metal oxyfluorides into superconducting oxides
09/20/2000CN1267343A Non-dash neck method for single crystal silicon growth
09/20/2000CN1266912A Super-lattice BaTiO3 material with new structure and multiple performance
09/19/2000US6121647 A perovskite crystalline lead, titanium and a rare earth oxide used in a semiconductor device, e.g., nonvolatile memories; infrared sensors; optical modulators, switches, integrated circuits; reduced leakage; reverse polarity
09/19/2000US6121178 Sintered ITO and an ITO sputtering target
09/19/2000US6121163 Forming a layer on substrates by vapor deposition
09/19/2000US6120749 Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same
09/19/2000US6120602 Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced
09/19/2000US6120599 Silicon single crystal wafer having few crystal defects, and method for producing the same
09/19/2000US6120598 Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method
09/13/2000EP1035576A2 A processing method of silicon epitaxial growth wafer and a processing apparatus thereof
09/13/2000EP1035235A1 Method for producing silicon single crystal wafer and silicon single crystal wafer
09/13/2000EP1034325A1 Method for producing a gallium nitride epitaxial layer
09/13/2000EP1034323A1 Apparatus for use in crystal pulling
09/13/2000CN1266112A Decarbonization colour-removing annealing method for sapphire crystal
09/12/2000US6117346 Process for forming a microstructure in a substrate of a ferroelectric single crystal
09/12/2000US6117231 Method of manufacturing semiconductor silicon single crystal wafer
09/12/2000US6117230 Process for producing a silicon single crystal, and heater for carrying out the process
09/12/2000CA2030483C Method for the accelerated making of super conductive ceramic strips or wires
09/08/2000WO2000052236A1 Silicon wafer
09/08/2000WO2000052235A1 Method for producing silicon single crystal
09/08/2000WO2000020664A9 Continuous oxidation process for crystal pulling apparatus
09/06/2000EP1033421A1 Oxidation apparatus and process for the passivation of dusts
09/06/2000EP0875607B1 Silicon single crystal with no crystal defects in peripheral part of wafer
09/05/2000US6113692 Apparatus and process for the formation of monocrystalline silicon carbide (SiC) on a nucleus
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