| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 08/27/2002 | US6440214 Method of growing a semiconductor layer |
| 08/27/2002 | CA2275088C Gaas single crystal substrate and epitaxial wafer using the same |
| 08/22/2002 | WO2002064866A1 Method for fabricating silicon single crystal |
| 08/22/2002 | WO2002064865A1 Semiconductor crystal growing method and semiconductor light-emitting device |
| 08/22/2002 | WO2002064863A1 Method of forming single crystals of a ceramic, semiconductive or magnetic material |
| 08/22/2002 | WO2002064627A2 Crystallization of igf-1 |
| 08/22/2002 | US20020112659 Single crystal and method of manufacturing same |
| 08/22/2002 | US20020112658 Process for monitoring the gaseous environment of a crystal puller for semiconductor growth |
| 08/22/2002 | DE10102126A1 Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium Method and apparatus for producing a single crystal of silicon |
| 08/22/2002 | CA2431033A1 Crystallization of igf-1 |
| 08/21/2002 | EP1233085A1 SiC SINGLE CRYSTAL AND METHOD FOR GROWING THE SAME |
| 08/21/2002 | EP1232521A2 Silicon layer highly sensitive to oxygen and method for obtaining same |
| 08/21/2002 | EP1097262B1 Monocrystalline powder and monograin membrane production |
| 08/21/2002 | CN1365403A Silicom wafer and method for producing silicon wafer crystal |
| 08/15/2002 | WO2002063656A2 Chemical monolayer and micro-electronic junctions and devices containing same |
| 08/15/2002 | WO2002063076A1 Method for reducing oxygen component and carbon component in fluoride |
| 08/15/2002 | US20020110816 Method for screening microcrystallizations for crystal formation |
| 08/15/2002 | US20020108560 Method for manufacturing a diamond cylinder array having dents therein |
| 08/15/2002 | US20020108559 Liquid phase growth methods and liquid phase growth apparatus |
| 08/15/2002 | US20020108398 Diamond etching |
| 08/14/2002 | EP1231301A1 Epitaxial silicon wafer |
| 08/14/2002 | EP1230447A1 Method of controlling growth of a semiconductor crystal |
| 08/14/2002 | EP1230421A1 Method of modifying source chemicals in an ald process |
| 08/14/2002 | EP1230005A1 Crystalline gallium nitride and method for forming crystalline gallium nitride |
| 08/14/2002 | EP1127175B1 Process for preparing defect free silicon crystals which allows for variability in process conditions |
| 08/14/2002 | CN1364203A Method and apparatus for chemical vapor deposition of polysilicon |
| 08/13/2002 | US6432330 Jet system for spherical shape devices |
| 08/13/2002 | US6432198 Method for growing a semiconductor crystal from a semiconductor melt |
| 08/13/2002 | CA2097839C Process for depositing high temperature superconducting oxide thin films |
| 08/12/2002 | CA2335260A1 Method of forming single crystals of a ceramic, semiconductive or magnetic material |
| 08/08/2002 | WO2002061896A1 Double, optionally doped, potassium-ytterbium tungstate single crystal, production method therefor and applications |
| 08/08/2002 | WO2002060827A2 Method for quartz crucible fabrication |
| 08/08/2002 | WO2001022482A9 Method of producing relaxed silicon germanium layers |
| 08/08/2002 | US20020106874 Crystal growth process, semiconductor device, and its production process |
| 08/08/2002 | US20020105897 Chemical monolayer and micro-electronic junctions and devices containing same |
| 08/08/2002 | US20020104478 Silicon carbide single crystal and process for producing the same |
| 08/08/2002 | US20020104477 Method of growing a polycrystalline silicon layer. method of growing a single crystal silicon layer and catalytic CVD apparatus |
| 08/08/2002 | CA2437101A1 Potasium ytterbium double wolframate single crystal, optionally doped, procedure for its production and applications |
| 08/07/2002 | CN1362546A Lithium niobate crystal chip with near stoichiometric ratio and its prepn process |
| 08/07/2002 | CN1362545A Lithium niobate crysal with near stoichiometric ratio and its growth process |
| 08/07/2002 | CN1362543A Growth process of magnesium silicate crystal with doped quadrivalent chromium |
| 08/06/2002 | US6429318 Metal halide layer and hydrogen halide salt of organic diamine are contacted; salt formation, supersaturation, precipitation |
| 08/06/2002 | US6429035 Method of growing silicon crystal in liquid phase and method of producing solar cell |
| 08/06/2002 | US6428635 Substrates for superconductors |
| 08/06/2002 | US6428621 Method for growing low defect density silicon carbide |
| 08/01/2002 | WO2002059401A2 Energy pathway arrangement |
| 08/01/2002 | WO2002059400A2 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core |
| 08/01/2002 | WO2002059399A2 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates |
| 08/01/2002 | WO2001099147A3 Flat cable connector for ultrasound soldering |
| 08/01/2002 | US20020102862 Method for fabricating a SiC film and a method for fabricating a SiC multi-layered film structure |
| 08/01/2002 | US20020102761 Formation method for semiconductor layer |
| 08/01/2002 | US20020102497 Barium fluoride crystalline material for use in dispersion management of below 160 nm optical lithography processes |
| 08/01/2002 | US20020100410 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults |
| 08/01/2002 | CA2432396A1 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates |
| 07/31/2002 | EP1226028A1 Beads of polycrystalline alkali-metal or alkaline-earth metal fluoride, their preparation and their use |
| 07/31/2002 | CN1361551A Method for producing semi-conductor device |
| 07/30/2002 | US6426264 Method of manufacturing a semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device |
| 07/30/2002 | US6426156 Magnetostatic wave device |
| 07/25/2002 | WO2002058163A2 Method for producing semiconductor components |
| 07/25/2002 | WO2002057520A1 System and method for screening of nucleation tendency of a molecule in a levitated droplet |
| 07/25/2002 | WO2002057519A1 Process for monitoring the gaseous environment of a crystal puller for semiconductor growth |
| 07/25/2002 | WO2002057518A2 Apparatus and process for the preparation of low-iron_contamination single crystal silicon |
| 07/25/2002 | WO2001063022A3 Controlled neck growth process for single crystal silicon |
| 07/25/2002 | US20020098418 Storage medium comprising strontium barium niobate single crystal containing europium and cerium as impurities; for use in holography, phase conjugate mirror, and optical amplifier |
| 07/25/2002 | US20020096109 Apparatus for growing a single crystalline ingot |
| 07/25/2002 | US20020096108 Device having a foil-lined crucible for the sublimation growth of an SiC single crystal |
| 07/25/2002 | US20020096104 Single crystal SiCand method of producing the same as well as SiC semiconductor device and SiC composite material |
| 07/25/2002 | DE10102315A1 Production of small crystalline semiconductor components, e.g. LEDs, comprises depositing crystalline layers on a prestructured crystalline substrate, separating the layers from the substrate and dividing into partial pieces |
| 07/25/2002 | CA2434886A1 System and method for screening of nucleation tendency of a molecule in a levitated droplet |
| 07/24/2002 | EP1225257A2 Single crystal SiC and method of producing the same as well as SiC semiconductor device and SiC composite material |
| 07/24/2002 | EP1225255A1 Process and apparatus for producing silicon single crystal |
| 07/24/2002 | CN1360091A Process for synthesizing yellow cubic borium nitride monocrystal with Mg as catalyst |
| 07/23/2002 | US6423615 Silicon wafers for CMOS and other integrated circuits |
| 07/23/2002 | US6423137 Single crystal material supplying apparatus and single crystal material supplying method |
| 07/23/2002 | CA2263339C Single crystal sic and process for preparing the same |
| 07/18/2002 | WO2002055766A1 Semiconducting oxide nanostructures |
| 07/18/2002 | WO2002055765A2 Crystal puller and method for growing single crystal semiconductor material |
| 07/18/2002 | WO2002055443A2 Apparatus for silica crucible manufacture |
| 07/18/2002 | WO2002040417A3 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 07/18/2002 | US20020094682 Reactor and a susceptorr is coated with an aluminum gallium indium nitride, which is heated to >/= 1000 degress C to generate chemical vapor deposition between a III and a V raw material gases |
| 07/18/2002 | US20020094450 Semiconducting oxide nanostructures |
| 07/18/2002 | US20020094372 Applying a first sol for forming the piezoelectric film on a substrate having the lower electrode, to form a lower film, applying second sol having greater lead content than first sol to form upper film, heat treating the films |
| 07/18/2002 | US20020093055 Epitaxial base substrate and epitaxial substrate |
| 07/18/2002 | US20020092464 Liquid phase growth process, liquid phase growth system and substrate member production method |
| 07/18/2002 | US20020092461 Process and apparatus for producing a silicon single crystal |
| 07/18/2002 | US20020092460 Process for growth of defect free silicon crystals of arbitrarily large diameters |
| 07/18/2002 | DE10164603A1 Production of an iron nitride thin layer used in the production of magnetic heads comprises forming an iron nitride epitaxial layer on a substrate by reacting a vaporized iron |
| 07/17/2002 | EP1223234A2 Epitaxial base substrate and epitaxial substrate |
| 07/17/2002 | EP1222325A1 Method for producing czochralski silicon free of agglomerated self-interstitial defects |
| 07/17/2002 | EP1222324A1 Czochralski process for growing single crystal silicon by controlling the cooling rate |
| 07/17/2002 | CN1359194A Surface sound wave device and used piezoelectric base unit |
| 07/17/2002 | CN1358885A Technology for preparing Tobemolai stone crystal whisker by water heating of chelate method |
| 07/17/2002 | CN1358884A Apparatus and method for making single crystal |
| 07/11/2002 | WO2002054468A2 Iii-v nitride devices having a compliant substrate |
| 07/11/2002 | WO2002053813A1 Silicon carbide single crystal, and method and apparatus for producing the same |
| 07/11/2002 | WO2002053812A1 Silicon single crystal wafer and method for producing silicon single crystal |
| 07/11/2002 | WO2002053811A1 Method and apparatus for growing single crystal |
| 07/11/2002 | US20020090818 Apparatus and method for surface finishing a silicon film |
| 07/11/2002 | US20020088979 Semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device and method of manufacturing the same |
| 07/11/2002 | US20020088391 Seed crystal holder with lateral mount for an SiC seed crystal |