| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
|---|
| 06/06/2002 | US20020068201 Providing expitaxially compatible sacrificial template, depositing single crystal aluminum, gallium indium nitride material on template to form composite sacrificial template/nitride article, parting |
| 06/06/2002 | US20020066720 Fabrication method of erbium-doped silicon nano-size dots |
| 06/06/2002 | US20020066403 Growing areas using a mask patterned on a substrate surface and growing a nitride in the growing areas, while forming facet structures |
| 06/06/2002 | US20020066402 Method and device for producing optical fluoride crystals |
| 06/05/2002 | EP1211337A2 Method of making diamond product and diamond product |
| 06/05/2002 | EP1210472A1 Heater arrangement for crystal growth furnace |
| 06/05/2002 | EP1210171A1 High pressure/high temperature production of colored diamonds |
| 06/04/2002 | US6399500 Uniformity; removal defects |
| 06/04/2002 | US6398867 Crystalline gallium nitride and method for forming crystalline gallium nitride |
| 05/30/2002 | WO2002042527A1 Diamond substrate having piezoelectric thin film, and method for manufacturing it |
| 05/30/2002 | WO2001098563A3 Orientation independent oxidation of silicon |
| 05/30/2002 | US20020064675 Dual process semiconductor heterostructures |
| 05/30/2002 | US20020064496 Method of making diamond product and diamond product |
| 05/30/2002 | US20020063351 Jet system for spherical shape devices |
| 05/29/2002 | EP1209259A2 Low defect density, self-interstitial dominated silicon |
| 05/29/2002 | EP1209258A2 Low defect density silicon |
| 05/29/2002 | CN1351680A Semi-insulating silicon carbide without vandium dumination |
| 05/29/2002 | CN1351679A Method and apparatus for growing high quality single crystal |
| 05/29/2002 | CN1085746C Production of silicon carbide monocrystals |
| 05/28/2002 | US6396080 Single crystals containing dopes |
| 05/28/2002 | US6395657 Fluoride crystalline optical lithography lens element blank |
| 05/28/2002 | US6395653 Semiconductor wafer with crystal lattice defects, and process for producing this wafer |
| 05/23/2002 | WO2002040417A2 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 05/23/2002 | US20020061648 Selecting materials for forming substrate and epitaxial material; epitaxial layer is kept under compressive stress if lattice constant is greater that substrate, if lattice constant is less, it is subjected to tensile stress |
| 05/23/2002 | US20020060319 Crystal thin film and production method therefor |
| 05/23/2002 | US20020059898 An offcut angle of from about 6 to about 10 degrees; superior morphological and material properties. |
| 05/23/2002 | DE10056726A1 Directed solidified polycrystalline silicon used as material for solar cells has electrically active grain boundaries in part of the material volume |
| 05/22/2002 | EP1207215A2 A method for fabricating a III-V nitride film and an apparatus for fabricating the same |
| 05/22/2002 | CN1350603A Sequential hydride vapor-phase epitaxy |
| 05/22/2002 | CN1350602A Method and system of controlling taper growth in a semiconductor crystal growth process |
| 05/21/2002 | US6391229 Borate crystal, growth method of the same and laser equipment using the same |
| 05/21/2002 | CA2109962C Process for making superconducting t1-pb-sr-ca-cu oxide films and devices |
| 05/16/2002 | US20020058351 Method of manufacturing semiconductor device having ZnO based oxide semiconductor layer |
| 05/16/2002 | US20020058162 III nitride epitaxial wafer and usage of the same |
| 05/16/2002 | US20020056840 Epitaxial growth of nitride compound semiconductor |
| 05/16/2002 | US20020056474 Crystalline silicon particle, method of producing the same, and photoelectric conversion device |
| 05/16/2002 | US20020056412 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same |
| 05/16/2002 | US20020056411 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same |
| 05/16/2002 | US20020056401 Superconductor precursor solutions; salt of a rare earth metal including yttrium, a salt of an alkaline earth metal (such as barium) and a salt of a transition metal such as copper. |
| 05/15/2002 | EP1205584A1 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same |
| 05/15/2002 | EP1205583A1 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same |
| 05/15/2002 | EP1204788A1 Crystal growth and annealing method and apparatus |
| 05/15/2002 | EP1204467A1 Methods and apparatus for performing array microcrystallizations |
| 05/15/2002 | EP1040212A4 Charge for vertical boat growth process and use thereof |
| 05/15/2002 | CN1349569A Method and device for continuously pulling up crystal |
| 05/14/2002 | US6388366 An electronic device, comprising: a body defining a vacuum space; a cathode formed of carbon nitride, said carbon nitride being doped n-type and an electrode associated with said carbon nitride cathode; vacuum such that electrons are emitted |
| 05/14/2002 | US6387722 Methods for preparing an epitaxial wafer having a gallium nitride epitaxial layer deposited on a semiconductor substrate |
| 05/14/2002 | US6387712 Process for preparing ferroelectric thin films |
| 05/14/2002 | US6387466 Single-crystal silicon wafer |
| 05/09/2002 | US20020055239 Coupling the self-assembly of copolymers, in thin films with subsequent chemical modification to remove one component of the copolymer; magnetic storage media, magnetoresistance devices |
| 05/09/2002 | US20020054956 Integrated dynamic blending apparatus |
| 05/09/2002 | US20020053318 Slicing of single-crystal films using ion implantation |
| 05/09/2002 | US20020053315 Process for preparing low defect density silicon using high growth rates |
| 05/08/2002 | EP1203834A1 Method for forming multi-phase lead germanate film |
| 05/08/2002 | EP0954623B1 Silicon carbide monocrystal growth |
| 05/08/2002 | DE10052154A1 Verfahren und Vorrichtung zum Trennen von Einkristallen, Justiervorrichtung und Testverfahren zum Ermitteln einer Orientierung eines Einkristalls für ein derartiges Verfahren Method and apparatus for separating crystals, adjusting and testing method for determining an orientation of a single crystal for such a method |
| 05/08/2002 | CN1348603A Fabrication of gallium nitride layers by lateral growth |
| 05/08/2002 | CN1084400C Rhombic monohydrated dicalcium hexaborate as non-linear optical crystal and its growth method and application |
| 05/08/2002 | CN1084398C Equipment for growing high-temp. oxide crystal |
| 05/07/2002 | US6383288 Method of forming diamond film |
| 05/02/2002 | WO2002035615A2 Precursor solutions and methods of using same |
| 05/02/2002 | WO2002035599A1 Production method for silicon wafer and silicon wafer |
| 05/02/2002 | WO2002035580A2 Three-terminal field-controlled molecular devices |
| 05/02/2002 | WO2002034973A1 Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation |
| 05/02/2002 | US20020052060 Method for growing semiconductor layer and method for fabricating semiconductor light emitting elements |
| 05/02/2002 | US20020050288 Solar cell and process of manufacturing the same |
| 05/02/2002 | EP1202334A1 Method of producing silicon epitaxial wafers |
| 05/02/2002 | EP1201795A1 Semiconductor single crystal pulling apparatus |
| 05/02/2002 | EP1201794A1 Method and device for continuously pulling up crystal |
| 05/02/2002 | EP1201793A1 Method and apparatus for growing high quality single crystal |
| 05/02/2002 | EP1200854A1 Fluoride lens crystal for optical microlithography systems |
| 05/02/2002 | EP1200652A1 Magnesium-doped iii-v nitrides & methods |
| 05/02/2002 | EP1200651A1 Seed crystal holder with a lateral border for an sic seed crystal |
| 05/02/2002 | EP1200650A1 Sic monocrystal sublimation growth device with a film-covered crucible |
| 05/02/2002 | EP1200649A1 Method of manufacturing crystal of silicon using an electric potential |
| 05/01/2002 | CN1346803A Process for preparing crystal wisker of potassium hexatitanate |
| 04/30/2002 | US6380050 Method of epitaxially growing a GaN semiconductor layer |
| 04/30/2002 | US6379642 Vacancy dominated, defect-free silicon |
| 04/30/2002 | US6378835 Method for producing silicon ingot having directional solidification structure and apparatus for producing the same |
| 04/25/2002 | WO2001096635A3 A method for producing sphere-based crystals |
| 04/25/2002 | US20020049129 Density of defects of less than 104 per square centimeter, wherein said defects are comprised of micropipes and dislocations. |
| 04/25/2002 | US20020048909 Process of vapor phase growth of nitride semiconductor |
| 04/25/2002 | US20020048836 Low temperature buffer layer is stably grown at high rate on a sapphire substrate |
| 04/25/2002 | US20020048670 Single crystalline silicon wafer, ingot and producing method thereof |
| 04/25/2002 | US20020046694 Single crystalline silicon wafer, ingot, and producing method thereof |
| 04/24/2002 | EP1199388A1 Group III nitride film containing aluminum with hexagonal system crystal structure |
| 04/24/2002 | EP1198626A2 Edge meniscus control of crystalline ribbon growth |
| 04/24/2002 | EP1105555B1 METHOD FOR GROWING SiC MONOCRYSTALS |
| 04/24/2002 | EP0852575B1 Silicon nitride nanowhiskers and method of making same |
| 04/24/2002 | CN1346512A Dual process semiconductor heterostructure and methods |
| 04/24/2002 | CN1346413A Compound gas injection system and methods |
| 04/24/2002 | CN1083498C Oxide single crystal and method of manufacturing thereof |
| 04/23/2002 | US6376900 Single crystal SiC |
| 04/23/2002 | US6376339 Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride semiconductor structures fabricated thereby |
| 04/23/2002 | US6376276 Method of preparing diamond semiconductor |
| 04/23/2002 | US6375551 Angstrom polishing of calcium fluoride optical VUV microlithography lens elements and preforms |
| 04/18/2002 | WO2002031893A1 Epitaxial oxide films via nitride conversion |
| 04/18/2002 | WO2002031234A1 Crystal growth apparatus |
| 04/18/2002 | WO2002031233A1 Heat shield assembly for crystal pulling apparatus |
| 04/18/2002 | WO2002031232A1 Method and device for producing optical fluoride crystals |