| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 01/17/2001 | EP1069214A1 Epitaxial silicon wafer and its production method, and substrate for epitaxial silicon wafer |
| 01/17/2001 | EP1068375A1 Open-loop method and system for controlling growth of semiconductor crystal |
| 01/17/2001 | CN1280648A Turbine components with skin bonded to substrates |
| 01/17/2001 | CN1280634A Apparatus for use in crystal pulling |
| 01/16/2001 | US6174364 Method for producing silicon monocrystal and silicon monocrystal wafer |
| 01/16/2001 | US6174363 Method for producing silicon single crystal |
| 01/11/2001 | WO2001002628A1 Doped diamond |
| 01/10/2001 | CN1279733A Method for producing a gallium nitride epitaxial layer |
| 01/10/2001 | CN1279732A Charge for vertical boat growth process and use thereof |
| 01/10/2001 | CN1279306A Rhombic monohydrated dicalcium hexaborate as non-linear optical crystal and its growth process and application |
| 01/10/2001 | CN1279305A Simple synthesis process of raw lithium strontium aluminium fluoride (LiSAF) material |
| 01/10/2001 | CN1060542C Growth technology of thallium doped cesium iodide grystal by antivacuum fall |
| 01/09/2001 | US6172380 Semiconductor material |
| 01/09/2001 | US6172009 Controlled conversion of metal oxyfluorides into superconducting oxides |
| 01/09/2001 | US6172008 Process for preparing high crystallinity oxide thin film |
| 01/09/2001 | US6171871 Ferroelectric memory device and their manufacturing methods |
| 01/09/2001 | US6171394 Method for manufacturing compound semiconductor epitaxial wafer |
| 01/09/2001 | US6171391 Method and system for controlling growth of a silicon crystal |
| 01/04/2001 | WO2001000908A1 Heater arrangement for crystal growth furnace |
| 01/04/2001 | WO2001000907A1 Polishing of fluoride crystal optical lenses and preforms using cerium oxide for microlithography |
| 01/04/2001 | DE19929591A1 Process for producing an epitaxial gallium nitride layer on a substrate comprises applying a precursor compound containing gallium carbodiimide on the substrate, and converting into crystalline gallium nitride by pyrolysis |
| 01/04/2001 | DE10027780A1 Wafer defect measurement involves measuring depths of defects from wafer surface on basis of measured intensities of scattered laser radiation at two or more wafer temperatures |
| 01/03/2001 | CN1278565A Silicon mixed with structural oxygen, production method and use thereof |
| 01/03/2001 | CN1060233C Vapor growth apparatus and vapor growth method capable of growing a compound semicondcutor layer having an evenness and an interfacial sharpness in units of atomic layers with good productivity |
| 01/03/2001 | CN1060232C Method for growing gallium antimonide single crystal by straight pulling method and apparatus |
| 01/03/2001 | CN1060231C Apparatjus for pulling silicon single crystal |
| 01/03/2001 | CN1060224C Forming method for lead-lanthanum titanate film |
| 01/02/2001 | US6168659 Forming an amorphous silicon dioxide thin film on a silicon substrate, forming a single crystal silicon thin film on said silicon dioxide thin film and then forming gallium nitride directly on said silicon thin film. |
| 12/28/2000 | WO2000079603A1 Diamond semiconductor device and method of manufacture thereof |
| 12/28/2000 | WO2000079570A2 Silicon carbide epitaxial layers grown on substrates offcut towards <1100> |
| 12/28/2000 | WO2000078445A1 Methods and apparatus for performing array microcrystallizations |
| 12/28/2000 | DE10011697A1 Oxide superconductor film for switching element, has bi-crystal oxide superconductor film formed on bi-crystal board which has junction of predetermined length |
| 12/27/2000 | CN1278200A Method of bonding cast superalloys |
| 12/27/2000 | CN1278199A Turbine blades made from multiple signle crystasl cast superalloy segments |
| 12/26/2000 | US6165263 Method for growing single crystal |
| 12/21/2000 | WO2000077281A1 Encapsulation of crystals via multilayer coatings |
| 12/21/2000 | DE19927604A1 Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung Silicon with textured oxygen doping, its preparation and use |
| 12/20/2000 | EP1061564A2 MBE growth of group III-nitride semiconductor layers |
| 12/20/2000 | EP1061160A1 Silicon with structural oxygen doping, preparation and application thereof |
| 12/20/2000 | EP1061154A1 Method and apparatus for doping of CVD diamonds and diamonds so made |
| 12/20/2000 | EP1059976A1 Dynamically controlled crystallization method and apparatus and crystals obtained thereby |
| 12/19/2000 | US6162706 Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic |
| 12/19/2000 | US6162704 Method of making semiconductor device |
| 12/19/2000 | US6162293 Method for manufacturing ferroelectric thin film, substrate covered with ferroelectric thin film, and capacitor |
| 12/19/2000 | US6162292 Method of producing silicon monocrystal |
| 12/19/2000 | US6161499 Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma |
| 12/19/2000 | US6161311 System and method for reducing particles in epitaxial reactors |
| 12/17/2000 | CA2311618A1 Silicon with structured oxygen doping, its production and use |
| 12/16/2000 | CA2303713A1 Method and apparatus for in-situ solid state doping of cvd diamonds and diamonds so made |
| 12/14/2000 | WO2000075697A1 Fluoride lens crystal for optical microlithography systems |
| 12/14/2000 | WO2000075405A1 Crystal growth and annealing method and apparatus |
| 12/13/2000 | EP1059661A2 Crack-free epitaxial semiconductor layer formed by lateral growth |
| 12/13/2000 | CN1276340A Process for preparing silicon carbide crystal whisker from river sand |
| 12/12/2000 | US6160396 Optical magnetic field sensor probe |
| 12/12/2000 | US6159438 Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same |
| 12/12/2000 | US6158228 Method and apparatus for manufacturing single crystal method for controlling crystal orientation of single crystal ice |
| 12/07/2000 | WO2000074107A2 Tip structures, devices on their basis, and methods for their preparation |
| 12/07/2000 | WO2000034989A9 Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates |
| 12/07/2000 | DE19925044A1 Semiconductor disc with crystal matrix defects has upper and lower surface layers separated by upper and lower internal layers with central region between them having maximum nitrogen concentration |
| 12/07/2000 | DE10006589A1 Heat shield, for a Czochralski single crystal silicon ingot growth apparatus, comprises an internally insulated annular housing with a sloping bottom held within the crucible by a support element |
| 12/06/2000 | CN1276026A Process for preparing silicon melt from polysilicon charge |
| 12/06/2000 | CN1275639A Growth method for column type alpha-nickel sulfate hexahydrate crystal |
| 12/05/2000 | US6156916 Reacting an alkyl compound of group 13 element with an acyclic alcohol or with an aloxide of group 13 element to obtain dialkyl metal alkoxide, reacting it with alkali metal alkoxide, reacting product with divalent metal halide |
| 12/05/2000 | US6156706 Layer structure with an epitaxial, non-c-axis oriented HTSC thin film |
| 12/05/2000 | US6156119 Silicon single crystal and method for producing the same |
| 11/30/2000 | WO2000071787A2 Semi-insulating silicon carbide without vanadium domination |
| 11/30/2000 | WO2000071786A1 Method and apparatus for growing high quality single crystal |
| 11/30/2000 | DE19924649A1 Semiconductor wafer, for semiconductor device production, has a non-uniform lattice defect distribution or oxygen precipitate nucleation center concentration profile |
| 11/29/2000 | EP1055749A1 Process for producing a semiconductor wafer |
| 11/29/2000 | CN1274954A Film piezo-electric device |
| 11/28/2000 | US6153895 Semiconductor comprises a p-type impurity of a group 2a or group 5b element, and an n-type impurity of a group 4b or 7b element, or both, contained in a group 1b-3b-(6b)2 compound semiconductor; high conversion efficiency solar battery |
| 11/28/2000 | US6153166 Single crystal SIC and a method of producing the same |
| 11/28/2000 | US6153165 A complex in which a polycrystalline plate consisting of silicon and carbon atoms is stacked on the surface of a single crystal silicon carbide base and is subjected to heat treatment, which transforms polycrystals to single crystal |
| 11/28/2000 | US6153125 Useful for an optical field including a laser and wave changing devices |
| 11/28/2000 | US6153012 Device for treating a substrate |
| 11/28/2000 | US6153008 Device and method for pulling a single crystal |
| 11/28/2000 | US6152977 Surface functionalized diamond crystals and methods for producing same |
| 11/23/2000 | WO2000070129A1 Method and apparatus for epitaxially growing a material on a substrate |
| 11/22/2000 | EP1054460A2 Thin film piezoelectric device for acoustic resonators |
| 11/22/2000 | EP1054442A2 Method for growing epitaxial group III nitride compound semiconductors on silicon |
| 11/22/2000 | EP1054082A1 P-type group II-VI compound semiconductor crystals, growth method for such crystals, and semiconductor device made of such crystals |
| 11/21/2000 | US6149975 Potassium-containing thin film and process for producing the same |
| 11/16/2000 | WO2000068474A1 SiC WAFER, SiC SEMICONDUCTOR DEVICE AND SiC WAFER PRODUCTION METHOD |
| 11/16/2000 | WO2000068471A1 Sequential hydride vapor-phase epitaxy |
| 11/16/2000 | WO2000068470A1 Magnesium-doped iii-v nitrides & methods |
| 11/16/2000 | WO2000068148A1 ANISOTROPICALLY SHAPED SrTiO3 SINGLE CRYSTAL PARTICLES |
| 11/16/2000 | DE19922167A1 Verfahren zur Herstellung einer Halbleiterscheibe A process for producing a semiconductor wafer |
| 11/16/2000 | DE10009876A1 Single crystal thin film formation method for semiconductor industries, involves growing single crystal thin film on exposed surface of amorphous thin film by nuclear or molecular beam of specific incidence angle |
| 11/15/2000 | EP1052684A1 A method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor |
| 11/15/2000 | EP1052313A1 Silicon wafer and method of manufacture thereof |
| 11/15/2000 | EP1052222A1 SiGe CRYSTAL |
| 11/15/2000 | EP0976457B1 Method for treating semiconductor material |
| 11/15/2000 | CN1058534C Method for forming diamond film |
| 11/14/2000 | US6146761 Functional particle-dispersed thin film, granular magnetic thin film and production processes thereof |
| 11/14/2000 | US6146459 Czochralski pullers for manufacturing monocrystalline silicon ingots by controlling temperature at the center and edge of an ingot-melt interface |
| 11/14/2000 | US6146458 Growing a layer of group iii nitride material on a substrate |
| 11/14/2000 | US6146457 Thermal mismatch compensation to produce free standing substrates by epitaxial deposition |
| 11/14/2000 | US6146456 Method for annealing single crystal fluoride and method for manufacturing the same |
| 11/09/2000 | WO2000066818A1 Method and device for continuously pulling up crystal |
| 11/09/2000 | WO2000066817A1 Melt depth control for semiconductor materials grown from a melt |