C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/2002
12/19/2002	US20020191667 Apparatus for growing a silicon ingot
12/19/2002	US20020190275 III nitride film and a III nitride multilayer
12/19/2002	US20020190223 Organic film vapor deposition method and a scintillator panel
12/19/2002	US20020190064 Multicompartment container for growing calcium fluoride monocrystals
12/19/2002	US20020189532 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
12/19/2002	US20020189531 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
12/19/2002	US20020189527 Preparation of crystals
12/19/2002	DE10219387A1 Aus Kohlenfaser-verstärktem Kohlenstoffkompositmaterial hergestellter Schmelztiegel für ein Einkristallziehgerät Made of carbon fiber-reinforced carbon composite crucible for a Einkristallziehgerät
12/18/2002	EP1267393A2 Group III nitride semiconductor substrate for epitaxial lateral overgrowth (ELO)
12/18/2002	EP1266982A2 Method for production of zinc oxide single crystal
12/18/2002	EP1266053A1 PROCESS AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY OF CaF 2?
12/18/2002	EP1125009B1 Method for accurately pulling a crystal
12/18/2002	CN1385558A Preparation of nano grade Sic/SiO2 by high silicon coal and whisker/fibre thereof
12/18/2002	CN1096795C Electronic program guide schedule localization system and method
12/18/2002	CN1096506C Surface treated crucible for improving undisclocation performance
12/12/2002	WO2002099169A1 Single crystal silicon carbide and method for producing the same
12/12/2002	WO2002058163A3 Method for producing semiconductor components
12/12/2002	US20020187356 Reducing stresses; noncracking; semiconductor
12/12/2002	US20020187256 Atomic Layer Deposition using a boron compound as a reducing agent.
12/12/2002	US20020185669 Epitaxial ferroelectric thin-film device and method of manufacturing the same
12/12/2002	US20020185660 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
12/12/2002	US20020185061 Crucible made of carbon fiber-reinforced carbon composite material for single crystal pulling apparatus
12/12/2002	US20020185058 Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same
12/12/2002	US20020185057 Process for growing calcium fluoride monocrystals
12/12/2002	US20020185055 Method for production of zinc oxide single crystal
12/12/2002	US20020185054 High surface quality gan wafer and method of fabricating same
12/11/2002	EP1265274A2 Single crystal silicon carbide thin film fabrication method and fabrication apparatus for the same
12/11/2002	EP1264012A1 Method for producing crystals and/or crystal materials containing fluorine
12/11/2002	EP1264011A1 Iii-v nitride substrate boule and method of making and using the same
12/11/2002	EP1155170B1 Method for producing nitride monocrystals
12/11/2002	CN1384892A Method and apparatus for growing silicon carbice crystals
12/11/2002	CN1384056A Process and apapratus of producing four-needle zine oxide whisker
12/10/2002	US6492682 Soi (silicon on insulator) has a buried oxide film as a insulator film right below a silicon layer, and is expected to be a silicon material for high speed device with electric power saving performance
12/10/2002	US6491889 Mixed oxide
12/10/2002	US6491753 Method for the growing of single crystals
12/10/2002	US6491752 Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
12/10/2002	CA2220354C Method and apparatus using organic vapor phase deposition for the growth of organic thin films
12/05/2002	WO2002097173A2 Semi-insulating silicon carbide without vanadium domination
12/05/2002	US20020183487 Protein crystallization apparatus and protein crystallization method
12/05/2002	US20020182875 Method of manufacturing a mono-crystalline silicon ball
12/05/2002	US20020182863 Method of heat treating fluoride crystal
12/05/2002	US20020182637 Analysis of crystals; form solid suport, obtain mother liquor, crystalize, image drops from mother liquor
12/05/2002	US20020182451 Controlled conversion of metal oxyfluorides into superconducting oxides
12/05/2002	US20020179911 Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
12/05/2002	US20020179005 Method for manufacturing group III nitride compound semiconductor and a light-emitting device using group III nitride compound semiconductor
12/05/2002	US20020179001 Method of crystallizing amorphous silicon using a mask
12/05/2002	US20020179000 Method for single crystal growth of perovskite oxides
12/05/2002	CA2446818A1 Semi-insulating silicon carbide without vanadium domination
12/04/2002	EP1261760A1 Crystal growth device and method
12/04/2002	CN1382849A Expansion carbon cellolose and composite material using same
12/04/2002	CN1382842A Method and equipment for growing monocrystal of cadmium selenide by gas-phase vertical pulling
12/04/2002	CN1382841A Melt method for growing sosoloid monocrystal of lead lead-titanate niobium-zincate
12/04/2002	CN1382840A Method and appts. for pulling crystal
12/04/2002	CN1382839A Non-linear optical infrared crystal and its preparing process
12/04/2002	CN1382838A Process for preparing monocrystal membrane of Gallium nitride
12/04/2002	CN1382622A BCN crystal with orthogonal structure and its preparing process
12/03/2002	US6489587 Fabrication method of erbium-doped silicon nano-size dots
12/03/2002	US6489241 Apparatus and method for surface finishing a silicon film
12/03/2002	US6489027 High purity carbon fiber reinforced carbon composites and manufacturing apparatus for use thereof
12/03/2002	US6488770 Monocrystalline powder and monograin membrane production
12/03/2002	US6488769 Fluoride refining method and fluoride crystal manufacturing method, and optical part and aligner using same
12/03/2002	US6488767 High surface quality GaN wafer and method of fabricating same
11/2002
11/28/2002	WO2002095084A1 Process and apparatus for producing crystalline thin film buffer layers and structures having biaxial texture
11/28/2002	WO2002094773A2 Process for the isolation of crystalline imipenem
11/28/2002	WO2002094714A1 Method for producing highly pure, granular silicon in a fluidised bed
11/28/2002	US20020177312 Method of epitaxially growing submicron group III nitride layers utilizing HVPE
11/28/2002	US20020175340 Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrate
11/28/2002	US20020174833 Apparatus for epitaxially for growing semiconductor device structures with submicron group III nitride layer utilizing HVPE
11/28/2002	US20020174825 Method of growing oriented single crystals with reuseable crystal seeds or crystal nuclei
11/28/2002	DE10124848A1 Production of high-purity granular silicon by thermal decomposition of silanes or halosilanes in a fluidized-bed reactor comprises separating particles of the desired size in an external classifier
11/28/2002	CA2447673A1 Process for the isolation of crystalline imipenem
11/27/2002	EP1260616A1 Polycrystalline diamond thin film, photocathode and electron tube using it
11/27/2002	EP1259664A2 Controlled neck growth process for single crystal silicon
11/27/2002	EP1259663A2 Method and device for growing large-volume oriented monocrystals
11/27/2002	EP1259662A1 Method and apparatus for growing low defect density silicon carbide and resulting material
11/27/2002	CN1382069A High pressure/high temperature production of colored diamonds
11/27/2002	CN1381869A Preparation method of semiconductor substrate
11/27/2002	CN1381618A Protein crystallization equipment and protein crystallization method
11/26/2002	US6486071 Spherical shaped semiconductor integrated circuit
11/26/2002	US6485573 Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus
11/26/2002	US6485563 Sealing carbon dioxide gas (carbon souce for doping) of prefered partial pressure and gallium arsenide semiconductor material in gas impervious airtight vessel, melting the material, cooling to solidify and grow carbon doped crystals
11/21/2002	WO2002092886A1 High-resistivity silicon carbide substrate for semiconductor devices with high breakdown voltage
11/21/2002	WO2002092525A1 Quartz glass component and method for the production thereof
11/21/2002	WO2002071555A3 High repetition rate excimer laser system
11/21/2002	WO2002068398A9 New crystal forms of lamotrigine and processes for their preparations
11/21/2002	WO2002059400A3 Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core
11/21/2002	US20020173052 Method for performing submicroliter crystallization experiments with high experiment to experiment precision
11/21/2002	US20020170492 Single crystal pulling apparatus
11/21/2002	US20020170490 Method and apparatus for growing aluminum nitride monocrystals
11/21/2002	US20020170485 Low defect density epitaxial wafer and a process for the preparation thereof
11/21/2002	US20020170484 Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor
11/21/2002	CA2443512A1 High-resistivity silicon carbide substrate for semiconductor devices with high breakdown voltage
11/20/2002	EP1258544A1 Compound crystal and method of manufacturing same
11/20/2002	EP1258029A1 Method for treating a diamond surface and corresponding diamond surface
11/20/2002	EP1257697A1 Process for producing a silicon melt
11/20/2002	EP1257684A1 Method and apparatus for chemical vapor deposition of polysilicon
11/20/2002	EP1257612A2 Scintillator crystals, method for making same, use thereof
11/20/2002	CN1380449A Process for mixing oxygen into gallium nitride crystal and oxygen-mixed n-type gallium nitride single crystal plate
11/20/2002	CN1380448A Process for preparing zinc oxide whiskers with different forms by using gasification and oxidation method
11/20/2002	CN1094652C Method of manufacturing semiconductor device with crystallizing semiconductor film

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