| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 01/23/2003 | WO2003006719A1 METHOD FOR ACHIEVING LOW DEFECT DENSITY AIGaN SINGLE CRYSTAL BOULES |
| 01/23/2003 | US20030018030 Antiepileptic agents |
| 01/23/2003 | US20030017932 Cremeting; filtering carbon particles; sublimation; polishing |
| 01/23/2003 | US20030017712 Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method |
| 01/23/2003 | US20030016526 Gallium nitride-based light emitting device and method for manufacturing the same |
| 01/23/2003 | US20030015715 Gallium nitride-based light emitting device |
| 01/23/2003 | US20030015709 Structure and method for fabricating semiconductor structures, devices, and packaging utilizing the formation of a compliant substrates for materials used to form the same |
| 01/23/2003 | US20030015131 Silicon Wafer, Method for Determining Production Conditions of Silicon Single Crystal and Method for Producing Silicon Wafer |
| 01/23/2003 | US20030015130 Method for single crystal growth of barium titanate and barium titanate solid solution |
| 01/22/2003 | EP1278233A1 Production method of iii nitride compound semiconductor substrate and semiconductor device |
| 01/22/2003 | EP1171652B1 Method and apparatus for controlling diameter of a silicon crystal in a growth process |
| 01/22/2003 | CN1392296A Silicon ingot growing device |
| 01/22/2003 | CN1099718C Magnetostatic wave device and its raw material |
| 01/22/2003 | CN1099694C Sapphire pipe for gas discharge lamp and preparation method thereof |
| 01/22/2003 | CN1099476C Process and apparatus for controlling oxygen content in silicon wafers heavily doped with antimony or arsenic |
| 01/21/2003 | US6508960 Telluride quaternary nonlinear optic materials |
| 01/21/2003 | US6508880 Apparatus for growing low defect density silicon carbide |
| 01/16/2003 | WO2003005417A2 Method and apparatus for growing semiconductor crystals with a rigid support |
| 01/16/2003 | WO2003004734A1 Method for the production of low defect density silicon |
| 01/16/2003 | WO2002048434A3 Gallium nitride materials and methods for forming layers thereof |
| 01/16/2003 | WO2001068957A9 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
| 01/16/2003 | US20030013321 Anneal wafer manufacturing mehtod and anneal wafer |
| 01/16/2003 | US20030012984 Buffer layer and growth method for subsequent epitaxial growth of III-V nitride semiconductors |
| 01/16/2003 | US20030012899 Doped silica glass crucible for making a silicon ingot |
| 01/16/2003 | US20030010770 Heater arrangement for crystal growth furnace |
| 01/16/2003 | US20030010282 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates |
| 01/16/2003 | US20030010276 Method and apparatus for growing single crystal |
| 01/15/2003 | EP1275755A1 Silicon wafer and method for producing silicon single crystal |
| 01/15/2003 | EP1144737B1 Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy |
| 01/15/2003 | CN1390988A Process for preparing polycrystal doped by three-valence Ce ions, yttrium aluminate, lutetium aluminate and lutetium yttrium aluminate |
| 01/15/2003 | CN1390987A Composite flash crystal doped by lutetium cerialuminate and yttrium aluminate and its preparing process |
| 01/15/2003 | CN1098938C Single crystal drawing device |
| 01/15/2003 | CN1098760C Manufacture of vibrating sheets |
| 01/14/2003 | US6507046 High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage |
| 01/14/2003 | US6506667 Growth of epitaxial semiconductor material with improved crystallographic properties |
| 01/14/2003 | US6506251 Method for producing silicon single crystal |
| 01/09/2003 | WO2003003072A2 Optical element and manufacturing method therefor |
| 01/09/2003 | WO2003002457A1 Thin sheet producing method, and solar cell |
| 01/09/2003 | US20030008480 Process for manufacturing silicon epitaxial wafer |
| 01/09/2003 | US20030008179 Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon |
| 01/09/2003 | US20030006678 High-sensitivity flexible ceramic sensor |
| 01/09/2003 | US20030005879 Method for producing coated workpieces, uses and installation for the method |
| 01/09/2003 | US20030005878 ZnO/sapphire substrate and method for manufacturing the same |
| 01/08/2003 | EP1273684A2 Low defect density, vacancy dominated silicon |
| 01/08/2003 | EP1272693A1 Method for growing semiconductor crystalline materials containing nitrogen |
| 01/08/2003 | EP1272265A1 High temperature/high pressure colour change of diamond |
| 01/08/2003 | EP1272264A1 High temperature/high pressure colour change of diamond |
| 01/08/2003 | EP1068375B1 Open-loop method and system for controlling growth of semiconductor crystal |
| 01/08/2003 | EP0828867B1 Method and apparatus using organic vapor phase deposition for the growth of organic thin films with large optical non-linearities |
| 01/08/2003 | CN1389599A Gallium-lanthanum silicate crystal growth technology of crucible descending process |
| 01/07/2003 | US6504183 Reducing dislocation density, AlGaInN |
| 01/07/2003 | US6503594 Silicon wafers having controlled distribution of defects and slip |
| 01/07/2003 | US6503322 Electrical resistance heater and method for crystal growing apparatus |
| 01/07/2003 | US6503321 To form a damage layer at an implantation depth below a top surface of said crystal structure, and chemically etching the damage layer to detach a single crystal film from the crystal structure; optoelectronic devices |
| 01/07/2003 | US6502422 Method for quartz crucible fabrication |
| 01/03/2003 | WO2003000965A1 3c-sic nanowhisker synthesizing method and 3c-sic nanowhisker |
| 01/03/2003 | WO2003000962A1 Silicon single crystal substrate, epitaxial wafer, and method for manufacturing them |
| 01/03/2003 | WO2002022919A3 Forming a single crystal semiconductor film on a non-crystalline surface |
| 01/03/2003 | WO2002021576A3 Organic nanoelectric conductors |
| 01/02/2003 | US20030001498 Polycrystal diamond thin film and photocathode and electron tube using the same |
| 01/02/2003 | US20030000467 Microwave plasma film-forming apparatus for forming diamond film |
| 01/02/2003 | US20030000456 Beads of a polycrystalline alkali-metal or alkaline-earth metal fluoride, their preparation, and their use for preparing optical single crystals |
| 01/02/2003 | US20030000453 Optical element and manufacturing method thereof |
| 01/02/2003 | EP1271663A2 A III nitride film and III nitride multilayer |
| 01/02/2003 | EP1270769A1 Method for producing silicon single crystal having no flaw |
| 01/02/2003 | EP1270768A1 Epitaxial growing method for growing aluminum nitride and growing chamber therefor |
| 01/02/2003 | EP1270761A1 Method for preparing zinc oxide semi-conductor material |
| 01/02/2003 | EP1268884A1 Method and device for making substrates |
| 01/02/2003 | EP1268883A1 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
| 01/02/2003 | EP1268882A2 Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide |
| 01/02/2003 | EP1268087A2 Nanocylinder arrays |
| 01/01/2003 | CN1388838A Titanium dioxide cobalt magnetic film and its manufacturing method |
| 01/01/2003 | CN1388564A Method for making amorphous silicon crystalize using mask |
| 01/01/2003 | CN1097847C Vapar phase epitaxial technology of compound semiconductor |
| 12/31/2002 | US6501154 Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure |
| 12/31/2002 | US6500747 Method of manufacturing GaN semiconductor substrate |
| 12/31/2002 | US6500258 Method of growing a semiconductor layer |
| 12/31/2002 | US6500256 Single crystal silicon layer, its epitaxial growth method and semiconductor device |
| 12/31/2002 | US6499426 System and method for coating non-planar surfaces of objects with diamond film |
| 12/27/2002 | WO2002103753A2 Nanoelectronic interconnection and addressing |
| 12/27/2002 | WO2002103413A1 Optical member, process for producing the same, and projection aligner |
| 12/27/2002 | WO2002103091A1 SILICON SINGLE CRYSTAL WAFER HAVING VOID DENUDED ZONE ON THE SUFRACE AND DIAMETER OF AVOBE 300 mm AND ITS PRODUCTION METHOD |
| 12/27/2002 | WO2002103090A2 A method of growing a semiconductor layer |
| 12/27/2002 | WO2002102503A1 Reaction vessel for producing samples |
| 12/26/2002 | US20020197489 Silicon, a buffer layer, template layer comprises a perovskite oxide |
| 12/25/2002 | CN1387233A Method and system for mfg. group III-V compound semiconductor, and group III-V compound semiconductor |
| 12/25/2002 | CN1386707A Process for preparing high-purity silver nitrate crystal |
| 12/24/2002 | US6498288 Thermoelectric element; stability, noncracking |
| 12/24/2002 | US6497764 Method for growing SiC single crystals |
| 12/24/2002 | US6497762 Method of fabricating crystal thin plate under micro-gravity environment |
| 12/24/2002 | US6497761 Apparatus and method of growing single crystal of semiconductor |
| 12/19/2002 | WO2002101126A1 Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrate |
| 12/19/2002 | WO2002101121A1 High surface quality gan wafer and method of fabricating same |
| 12/19/2002 | WO2002101120A2 Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride |
| 12/19/2002 | WO2002082047A3 High throughput screening of crystallization of materials |
| 12/19/2002 | US20020193237 Method for fabrication of lead-based perovskite materials |
| 12/19/2002 | US20020192959 III nitride semiconductor substrate for ELO |
| 12/19/2002 | US20020192507 Bulk monocrystalline gallium nitride |
| 12/19/2002 | US20020192394 Thin polycrystalline silicon film forming method and thin film forming apparatus |
| 12/19/2002 | US20020192372 Organic film vapor deposition method and a scintillator panel |