| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 03/11/2003 | US6531235 Silicon, a buffer layer, template layer comprises a perovskite oxide |
| 03/06/2003 | WO2003018882A1 Improved polycrystalline tft uniformity through microstructure mis-alignment |
| 03/06/2003 | WO2002058163A8 Method for producing semiconductor components |
| 03/06/2003 | US20030045103 Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device |
| 03/06/2003 | US20030045102 Method of manufacturing compound single crystal |
| 03/06/2003 | US20030044651 Method of making a <250 nm wavelength optical fluoride crystal and device |
| 03/06/2003 | US20030044622 Having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. |
| 03/06/2003 | US20030042851 ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit |
| 03/06/2003 | US20030042578 Crystal growth process, semiconductor device, and its production process |
| 03/06/2003 | US20030041797 Comprises yttrium/iron oxide; for use in miniaturization of high-frequency devices such as isolators, circulators, and magnetostatic wave devices |
| 03/06/2003 | US20030041796 Method for producing silicon single crystal having no flaw |
| 03/06/2003 | US20030041795 Method for supplying CZ material |
| 03/05/2003 | EP1288348A2 Method to produce fracture resistant calcium fluoride single crystals and applications thereof |
| 03/05/2003 | EP1288347A2 Method of manufacturing compund single crystal |
| 03/05/2003 | EP1288346A2 Method of manufacturing compound single crystal |
| 03/05/2003 | EP1288342A2 Method of preparing group III-V compound semiconductor crystal |
| 03/05/2003 | EP1287188A1 Epitaxial silicon wafer free from autodoping and backside halo |
| 03/05/2003 | EP1129238B1 Production of bulk single crystals of silicon carbide |
| 03/05/2003 | EP0931187B1 A METHOD FOR PRODUCING A REGION DOPED WITH BORON IN A SiC-LAYER |
| 03/04/2003 | US6528395 Method of fabricating compound semiconductor device and apparatus for fabricating compound semiconductor device |
| 03/04/2003 | US6528394 Growth method of gallium nitride film |
| 03/04/2003 | US6527973 Less likely to crack during the growth and lapping of the single crystal film |
| 03/04/2003 | US6527859 Apparatus for growing a single crystalline ingot |
| 03/04/2003 | US6527853 Method for producing nitride monocrystals |
| 03/04/2003 | US6527851 Process for producing a planar body of an oxide single crystal |
| 02/27/2003 | WO2003016600A1 Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate |
| 02/27/2003 | WO2003016597A1 Method for producing a monocrystalline component, having a complex moulded structure |
| 02/27/2003 | WO2003016240A2 Components with bearing or wear-resistant surfaces |
| 02/27/2003 | WO2002080225A3 Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques |
| 02/27/2003 | WO2002054468A3 Iii-v nitride devices having a compliant substrate |
| 02/27/2003 | US20030040167 Compound crystal and method of manufacturing same |
| 02/27/2003 | US20030038302 Nitride semiconductor growing process |
| 02/27/2003 | US20030037724 Axial gradient transport appatatus and process for producing large size, single crystals of silicon carbide |
| 02/27/2003 | US20030037721 Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control |
| 02/26/2003 | EP1131477B1 Method for measuring polycrystalline chunk size and distribution in the charge of a czochralski process |
| 02/26/2003 | CN1399332A ZnO/saphire substrate and its making process |
| 02/26/2003 | CN1398790A Rod-like polycrystal GaN and its two-step prepn process |
| 02/25/2003 | US6525447 Method for manufacturing a langasite single crystal substrate, a langasite single crystal substrate, and a piezoelectric device |
| 02/25/2003 | US6524882 Method of producing p-type nitride based III-V compound semiconductor and method of fabricating semiconductor device using the same |
| 02/25/2003 | US6524668 Composite crucible, and preparation method and regeneration method thereof |
| 02/25/2003 | US6524385 Single crystal SiC composite material for producing a semiconductor device, and a method of producing the same |
| 02/20/2003 | WO2003015184A1 Diamond high brightness ultraviolet ray emitting element |
| 02/20/2003 | WO2003015144A1 Method and apparatus for doping semiconductors |
| 02/20/2003 | WO2003014427A1 System and method for producing synthetic diamond |
| 02/20/2003 | US20030033974 Layered substrates for epitaxial processing, and device |
| 02/20/2003 | CA2456847A1 System and method for producing synthetic diamond |
| 02/19/2003 | EP1284311A2 Silicon semiconductor substrate and process for producing the same |
| 02/19/2003 | EP1284310A1 Process for producing single crystal parts with a complicated shape |
| 02/19/2003 | EP1284236A1 Method for bulk separation of single-walled tubular fullerenes based on chirality |
| 02/19/2003 | EP0946959B1 Diamond fim deposition method |
| 02/18/2003 | US6521504 Semiconductor device and method of fabricating the same |
| 02/18/2003 | US6521316 single crystalline silicon wafer, ingot, and producing method thereof |
| 02/18/2003 | US6521042 Semiconductor growth method |
| 02/13/2003 | WO2002079549A3 Preparation of 157nm transmitting barium fluoride crystals with permeable graphite |
| 02/13/2003 | WO2002073244A9 Method of making high repetition rate excimer laser crystal optics and uv<200nm transmitting optical floride crystal |
| 02/13/2003 | WO2002055443A3 Apparatus for silica crucible manufacture |
| 02/13/2003 | US20030031807 Deposition of transition metal carbides |
| 02/13/2003 | US20030031619 Method for bulk separation of single-walled tubular fullerenes based on chirality |
| 02/13/2003 | US20030030039 Cesium-lithium-borate crystal and its application to frequency conversion of laser light |
| 02/13/2003 | US20030029376 High quality, semiconductor-grade, single crystals of silicon carbide; optics, electronics; minimization of gapping between tiles |
| 02/13/2003 | US20030029375 Silicon single crystal wafer fabricating method and silicon single crystal wafer |
| 02/13/2003 | US20030029195 Method for producing a quartz glass crucible for pulling up silicon single crystal and apparatus |
| 02/12/2003 | EP1282733A1 Method and device for feeding arsenic dopant into a silicon crystal growing process |
| 02/12/2003 | CN1396965A Method for controlling growth of silicon crystal to minimize growth rate and diameter deviations |
| 02/12/2003 | CN1396318A Non-linear infrared inorganic optical crystal and its preparing process |
| 02/12/2003 | CN1396114A Process for preparing magnesium crystal material |
| 02/12/2003 | CN1101484C Process for preparing lithium gallium oxide crystal |
| 02/11/2003 | US6517763 Scale of optical wavelengths; by the self-assembly of spheres, followed by one or more structure modification, infiltration, and extraction processes; eliminating the coloration; heating above the melting point |
| 02/11/2003 | US6517688 Using electric arc plating device; applying negative bias voltage |
| 02/07/2003 | CA2385276A1 Method for bulk separation of single-walled tubular fullerenes based on chirality |
| 02/06/2003 | WO2003010369A1 Oxide high-critical temperature superconductor acicular crystal and its production method |
| 02/06/2003 | US20030027407 Method for producing group III nitride compound semiconductor |
| 02/06/2003 | US20030027349 Analysis of fluorite sample; obtain sample containing calcium fluoride, screen sample by way of spectrum analysis, monitor crystal formation |
| 02/06/2003 | US20030024469 Silicon single crystal produced by crucible-free float zone pulling |
| 02/06/2003 | US20030024468 Method and device for the production of a single crystal |
| 02/05/2003 | EP1281196A1 Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam |
| 02/05/2003 | EP1280945A2 A multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
| 02/05/2003 | CN1395744A Anneal wafer manufacturing method and anneal wafer |
| 02/05/2003 | CN1394990A Molten salt growth method of barium borophosphate monocrystal |
| 02/05/2003 | CN1394989A Method for growing rutile crystal |
| 02/04/2003 | US6514564 Dynamic blending gas delivery system and method |
| 02/04/2003 | US6514476 Anisotropically shaped SrTiO3 single crystal particles |
| 01/30/2003 | WO2003008676A1 Method for preparing tungstate single crystal |
| 01/30/2003 | WO2003008674A2 Method of making high purity optical fluoride crystals |
| 01/30/2003 | WO2003008084A1 Method for making synthetic gems comprising elements recovered from complete or partial human or animal remains and the product thereof |
| 01/30/2003 | WO2002081044A3 Efg crystal growth apparatus and method |
| 01/30/2003 | WO2002055765A3 Crystal puller and method for growing single crystal semiconductor material |
| 01/30/2003 | US20030021732 Multilayer semiconductor laser analyzer; vertical cavities |
| 01/30/2003 | US20030020096 Method of producing a bonded wafer and the bonded wafer |
| 01/30/2003 | US20030019421 Crystal growing device and method |
| 01/29/2003 | EP1279644A2 Method for producing a quartz glass crucible for pulling up silicon single crystal and apparatus |
| 01/29/2003 | EP1133592B1 Method for controlling growth of a silicon crystal |
| 01/29/2003 | EP1115920B1 Method for obtaining a monocrystalline germanium layer on a monocrystalline silicon substrate, and resulting products |
| 01/29/2003 | CN1393914A Quick annealing, silicon wafer produced by annealing and equipment for pulling crystal using direct pulling |
| 01/29/2003 | CN1393907A Method and apparatus for mfg. single crystal silicon carbide |
| 01/29/2003 | CN1393580A Artificially synthetic luminous jewel and its synthesizing process |
| 01/29/2003 | CN1393579A Process for preparing yttrium vanadate crystal |
| 01/29/2003 | CN1100020C Method and apparatus for preparing crystal of cremated remains |
| 01/28/2003 | US6511913 Method for manufacturing a membrane |
| 01/28/2003 | US6510707 Methods for making silica crucibles |