| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 04/16/2003 | EP1302977A2 Method for producing group III nitride compound semiconductor |
| 04/16/2003 | EP1302976A1 Single crystal wafer and solar battery cell |
| 04/16/2003 | EP1302570A1 Langasite single crystal ingot, substrate for piezoelectric device and method for manufacture thereof, and surface acoustic wave device |
| 04/16/2003 | EP1302248A2 Method and appartus for plasma deposition |
| 04/16/2003 | EP1151155B1 Cdv method of and reactor for silicon carbide monocrystal growth |
| 04/16/2003 | CN1411035A Single crystal gallium nitride substrate, method for growing single crystal gallium nitride and method for mfg. substrate thereof |
| 04/16/2003 | CN1410604A Production method of hydroxy apatite crystal whisker |
| 04/16/2003 | CN1410603A Growth of high curie point lead niobate lead indate-lead titanate single crystal using crucible descending method |
| 04/15/2003 | US6548131 Quartz glass crucible and process for the manufacture of the crucible |
| 04/15/2003 | US6546754 Apparatus for silica crucible manufacture |
| 04/10/2003 | WO2003029431A2 Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus |
| 04/10/2003 | WO2003004734A9 Method for the production of low defect density silicon |
| 04/10/2003 | US20030068891 Method of manufacturing a wafer |
| 04/10/2003 | US20030068890 Argon/ammonia rapid thermal annealing for silicon wafers |
| 04/10/2003 | US20030068502 A surface treatment to form a quality, ultra-thin silicon wafer, first by smoothing the surface, setting annealing; high speed pulling a silicon ingot or rapidly cooling a pulled single crystal, slicing a silicon wafer off from ingot |
| 04/10/2003 | US20030068501 Single crystalline silicon wafer, ingot, and producing method thereof |
| 04/10/2003 | US20030066478 Crystal growth vessel and crystal growth method |
| 04/10/2003 | US20030066477 Preparation of 157nm transmitting barium fluoride crystals with permeable graphite |
| 04/10/2003 | CA2462766A1 Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus |
| 04/09/2003 | EP1300879A2 Ideal oxygen precipating silicon wafers and oxygen out-diffusion-less process therefor |
| 04/09/2003 | EP1300380A1 Adhesive composite coating for diamond and diamond-containing materials and method for producing said coating. |
| 04/09/2003 | EP1299900A2 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES |
| 04/09/2003 | EP1210472A4 Heater arrangement for crystal growth furnace |
| 04/09/2003 | EP1200650B1 Sic monocrystal sublimation growth device with a film-covered crucible |
| 04/09/2003 | EP1151154B1 Process of stacking and melting polycrystalline silicon for high quality single crystal production |
| 04/09/2003 | EP0959148B1 Method for producing diamond films using a vapour-phase synthesis system |
| 04/09/2003 | CN1409778A Magnesium-doped III-V nitrides & Methods |
| 04/09/2003 | CN1408904A Process for producing high purity magnesium oxide monocrystal using waste magnesite ore |
| 04/09/2003 | CA2670071A1 Gan substrate, method of growing gan and method of producing gan substrate |
| 04/08/2003 | US6544899 Process for manufacturing silicon epitaxial wafer |
| 04/08/2003 | US6544490 Silicon wafer and production method thereof and evaluation method for silicon wafer |
| 04/08/2003 | US6544332 Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer |
| 04/03/2003 | WO2003028120A1 Permanent current switch material and production method therefor |
| 04/03/2003 | WO2003027361A1 Mcraly-coating |
| 04/03/2003 | US20030064541 ZnO film, method for manufacturing the same, and luminescent element including the same |
| 04/03/2003 | US20030064225 Diamond-coated member |
| 04/02/2003 | EP1298709A2 III-nitride epitaxial substrate, epitaxial substrate for III-nitride element and III-nitride element |
| 04/02/2003 | EP1298234A2 Method of manufacturing a single crystal substrate |
| 04/02/2003 | CN1407143A Nickel ammonium sulfate hexahydrate crystal for ultraviolet filter |
| 04/01/2003 | US6542299 Material for bismuth substituted garnet thick film and a manufacturing method thereof |
| 03/27/2003 | WO2003025637A1 Photolithographic uv transmitting mixed fluoride crystal |
| 03/27/2003 | WO2003025636A1 Photolithographic method and uv transmitting fluoride crystals with minimized spatial dispersion |
| 03/27/2003 | WO2003025263A1 Nitride semiconductor substrate, its manufacturing method, and semiconductor optical device using the same |
| 03/27/2003 | WO2003025260A1 High yield method for preparing silicon nanocrystals with chemically accessible surfaces |
| 03/27/2003 | WO2002040417A9 Methods of obtaining photoactive coatings and/or anatase crystalline phase of titanium oxides and articles made thereby |
| 03/27/2003 | US20030056718 Method of manufacturing single crystal substrate |
| 03/27/2003 | US20030056715 Silicon semiconductor substrate and preparation thereof |
| 03/27/2003 | US20030056546 Photonic crystal materials and devices |
| 03/26/2003 | EP1296362A2 Single crystal GaN substrate, method of growing same and method of producing same |
| 03/26/2003 | EP1295970A1 MCrAlY type alloy coating |
| 03/26/2003 | EP1295969A1 Method of growing a MCrAIY-coating and an article coated with the MCrAIY-coating |
| 03/26/2003 | EP1295320A2 Process for etching silicon wafers |
| 03/26/2003 | EP1294962A1 Preparation of compounds based on phase equilibria of cu-in-se |
| 03/26/2003 | EP0944916B1 Very long and highly stable atomic wires and method for making these wires |
| 03/26/2003 | CN1406292A Silicon single crystal wafer and method for producing silicon single crystal |
| 03/26/2003 | CN1406291A Method and apparatus for growing single crystal |
| 03/26/2003 | CN1405903A Single Crystal gallium nitride base board and its growth method and manufacture method |
| 03/26/2003 | CN1405842A Silicon semiconductor base-plate and its making method |
| 03/26/2003 | CN1405841A Silicon-semiconductor lining and its producing method |
| 03/26/2003 | CN1405366A Method for preparing Titanium dioxide photon crystal for purple-light waveband air balloon |
| 03/26/2003 | CN1405083A Method of largely chiral separating single-wall tubelike fullerene |
| 03/25/2003 | US6538285 Silicon wafer |
| 03/25/2003 | US6537924 Method of chemically growing a thin film in a gas phase on a silicon semiconductor substrate |
| 03/25/2003 | US6537370 Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained |
| 03/25/2003 | US6537368 Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor |
| 03/20/2003 | WO2002075025A3 Process for preparing low defect density silicon using high growth rates |
| 03/20/2003 | WO2002066714A3 Process for preparing single crystal silicon having improved gate oxide integrity |
| 03/20/2003 | US20030052309 Nano-tube of multi-element system oxide |
| 03/20/2003 | US20030052080 Improving bone bonding; acid etch removal of native oxide layer from titanium device and roughening |
| 03/20/2003 | US20030051661 Crystal growth apparatus |
| 03/20/2003 | US20030051657 Vacancy, dominated, defect-free silicon |
| 03/19/2003 | EP1293592A2 Silicon semiconductor substrate and preparation thereof |
| 03/19/2003 | EP1293591A2 Silicon semiconductor substrate and method for production thereof |
| 03/19/2003 | EP1292727A2 A method for producing sphere-based crystals |
| 03/19/2003 | EP1292726A1 Single crystal diamond prepared by cvd |
| 03/19/2003 | EP1137826B1 Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same |
| 03/19/2003 | EP0909340B1 Multilayered material, process and device for producing a multilayered material |
| 03/19/2003 | CN1404523A Scintillator crystals, method for making same, use thereof |
| 03/19/2003 | CN1404522A Scintillator crystals, method for making same, use thereof |
| 03/19/2003 | CA2666671A1 Single crystal gan substrate, method of growing same and method of producing same |
| 03/18/2003 | US6534026 Density of defects of less than 104 per square centimeter, wherein said defects are comprised of micropipes and dislocations. |
| 03/18/2003 | US6533906 Method of manufacturing an oxide epitaxially strained lattice film |
| 03/18/2003 | US6533869 Apparatus and method for making free standing diamond |
| 03/18/2003 | US6533838 High purity gallium for preparation of compound semiconductor, and method and apparatus for purifying the same |
| 03/17/2003 | WO2002023604A1 Semiconductor base material and method of manufacturing the material |
| 03/17/2003 | CA2422624A1 Semiconductor base material and method of manufacturing the material |
| 03/13/2003 | WO2003021012A1 Semiconductor crystal producing method |
| 03/13/2003 | WO2003020497A1 Free-standing (al, ga, in)n and parting method for forming same |
| 03/13/2003 | WO2002035615A3 Precursor solutions and methods of using same |
| 03/13/2003 | US20030049642 Screening nucleation tendency of a molecule in a fluid or gas; obtain fluid or gas sample, transfer sample to detection apparatus, detect nucleation tendency, score nucleation tendency |
| 03/13/2003 | US20030047131 Method for pulling single crystal |
| 03/13/2003 | US20030047129 Method of manufacturing compound single crystal |
| 03/12/2003 | EP1291930A2 ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit |
| 03/12/2003 | EP1291456A1 Polycrystalline silicon rod and method for processing the same |
| 03/12/2003 | EP1290721A1 Preparation method of a coating of gallium nitride |
| 03/12/2003 | EP1290251A1 Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| 03/12/2003 | CN1402317A Semiconductor silicon wafer and mfg. method thereof |
| 03/12/2003 | CN1402306A Nitride semiconductor growing process |
| 03/12/2003 | CN1401828A Method for mfg. plate crystal of silicon carbide |
| 03/12/2003 | CN1103116C Process for making electronic devices having low-leakage current and low-polarization fatigue |