| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 05/28/2003 | EP1313897A1 Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates |
| 05/28/2003 | CN1420819A Beads of polycrystalline alkali-metal or alkali-earth metal fluoride, their preparation and their use |
| 05/28/2003 | CN1420213A Method for producing silica glass crucible with crystallizing zone from porous silica glass parison |
| 05/28/2003 | CN1109775C Hard carbon coating |
| 05/27/2003 | US6569693 Method for fabricating epitaxial substrate |
| 05/27/2003 | US6569535 Silicon wafer and epitaxial silicon wafer utilizing same |
| 05/27/2003 | US6569237 Method of pulling up silicon single crystal and method of manufacturing epitaxial wafer |
| 05/27/2003 | US6569236 Device and method for producing single-crystal ingot |
| 05/22/2003 | WO2003043150A1 Light emitting element structure using nitride bulk single crystal layer |
| 05/22/2003 | WO2003008674A3 Method of making high purity optical fluoride crystals |
| 05/22/2003 | US20030096294 Automated method for setting up crystallization experiments employing a crystallization device identification code reader |
| 05/22/2003 | US20030096293 Automated crystallization experiment setup apparatus comprising crystallization device identification code reader |
| 05/22/2003 | US20030094618 Method for manufacturing gallium nitride compound semiconductor and light emitting element |
| 05/22/2003 | US20030094129 Below 160NM optical lithography crystal materials and methods of making |
| 05/22/2003 | US20030094128 Dispersion management optical lithography crystals for below 160nm optical lithography method thereof |
| 05/21/2003 | CN1419612A Silicon ribbon growth dendrite thickness control system |
| 05/21/2003 | CN1109135C Device and method for pulling single crystal |
| 05/20/2003 | US6566595 Solar cell and process of manufacturing the same |
| 05/20/2003 | US6566490 Geenration of preferential microcrystals; obtain peptide solutions, homogenize under pressure, recover protein crystal |
| 05/20/2003 | US6566279 Method for fabricating a SiC film and a method for fabricating a SiC multi-layered film structure |
| 05/20/2003 | US6566256 Dual process semiconductor heterostructures and methods |
| 05/20/2003 | US6566218 Boride-based substrate for growing semiconducting layers thereon and a semiconductor device using the same |
| 05/20/2003 | US6565826 Method of preparing zeolite single crystals |
| 05/20/2003 | US6565822 Epitaxial silicon wafer, method for producing the same and subtrate for epitaxial silicon wafer |
| 05/20/2003 | US6565651 Optimized silicon wafer strength for advanced semiconductor devices |
| 05/20/2003 | US6565649 Epitaxial wafer substantially free of grown-in defects |
| 05/20/2003 | US6565648 Production method of ferro-electric crystals having periodically-poled structure |
| 05/15/2003 | WO2003040440A2 Apparatus and method for diamond production |
| 05/15/2003 | US20030092263 Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device |
| 05/15/2003 | US20030091934 Fluorides of alkaline earth cations having different optical polarizabilities to produce an overall isotropic polarizability |
| 05/15/2003 | US20030091865 Manufacturing method for high-density magnetic data storage media |
| 05/15/2003 | US20030091500 Magnetic recording media |
| 05/15/2003 | US20030089967 Silicon wafer and fabricating method therefor |
| 05/15/2003 | US20030089307 Method and device for growing large-volume oriented monocrystals |
| 05/15/2003 | US20030089306 Method for producing crystal and/or crystal materials containing fluorine |
| 05/15/2003 | US20030089304 Method of making high purity optical fluoride crystals |
| 05/15/2003 | US20030089301 Single crystal production method |
| 05/14/2003 | EP1310458A2 Method of assaying fluorite sample and method of producing fluorite crystal |
| 05/14/2003 | CN1417387A Surface modifying method for quartz glass crucible and surface modified crucible |
| 05/14/2003 | CN1108400C Method for removing heavy metal impurity from monocrystal silicon |
| 05/13/2003 | US6562720 Apparatus and method for surface finishing a silicon film |
| 05/13/2003 | US6562646 Method for manufacturing light-emitting device using a group III nitride compound semiconductor |
| 05/13/2003 | US6562132 EFG crystal growth apparatus and method |
| 05/13/2003 | US6562129 Formation method for semiconductor layer |
| 05/13/2003 | US6562126 Method and device for producing optical fluoride crystals |
| 05/13/2003 | US6562125 Heater arrangement for crystal growth furnace |
| 05/13/2003 | US6562123 Process for growing defect-free silicon wherein the grown silicon is cooled in a separate chamber |
| 05/08/2003 | WO2003038868A2 High resistivity silicon carbide single crystal and method of producing it |
| 05/08/2003 | US20030087509 Method of making semiconductor device |
| 05/08/2003 | US20030085426 Semiconductor device, method of forming epitaxial film, and laser ablation device |
| 05/08/2003 | US20030084840 Crystal-pulling apparatus for pullig and growing a monocrystalline silicon ingot, and method therefor |
| 05/08/2003 | US20030084839 Apparatus and method for diamond production |
| 05/07/2003 | EP1308544A1 SILICON SINGLE CRYSTAL WAFER HAVING VOID DENUDED ZONE ON THE SUFRACE AND DIAMETER OF ABOVE 300 mm AND ITS PRODUCTION METHOD |
| 05/07/2003 | EP1308543A1 Single crystal production method |
| 05/07/2003 | EP1155171B1 Method for growing an $g(a)-sic volume single crystal |
| 05/07/2003 | CN1415788A Monocrystal mfg process |
| 05/07/2003 | CN1107877C Specular surface body |
| 05/07/2003 | CN1107747C High-pressure sinter process for synthosizing large-size polymer crystal |
| 05/07/2003 | CN1107746C Process and appts. for prodn. of polycrystalline semiconductor crystal ingot |
| 05/06/2003 | US6558995 Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots |
| 05/06/2003 | CA2263352C Single crystal sic and a method of producing the same |
| 05/02/2003 | EP1305823A1 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide buffer layer |
| 05/02/2003 | EP1305161A1 Electronic and optical materials |
| 05/02/2003 | EP0989212B1 Lanthanum gallium silicate disc and its preparation method |
| 05/01/2003 | WO2003036771A1 Nitride semiconductor laser element, and production method therefor |
| 05/01/2003 | WO2003036698A2 Method of depositing high-quality sige on sige substrates |
| 05/01/2003 | WO2003035946A1 Method of growing a mcraly-coating and an article coated with the mcraly-coating |
| 05/01/2003 | WO2003035945A2 Substrate for epitaxy |
| 05/01/2003 | WO2003035915A1 Method for producing monocrystalline metallic wire |
| 05/01/2003 | US20030080345 Single crystal GaN substrate, method of growing same and method of producing same |
| 05/01/2003 | US20030079677 Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer |
| 05/01/2003 | US20030079676 High resistivity silicon carbide single crystal |
| 05/01/2003 | US20030079674 Silicon semiconductor substrate and process for producing the same |
| 04/30/2003 | CN1414149A Method of building crystal to grow lead zirconate titanate film |
| 04/30/2003 | CN1414146A Using induction heating molybdenium crucible in hydrogen atmosphere to make Czochralski grown sapphire crystal |
| 04/30/2003 | CN1414145A Growing technology of optical grade low corrusion tunnel density quartz crystal |
| 04/29/2003 | US6555845 Method for manufacturing group III-V compound semiconductors |
| 04/29/2003 | US6555194 Process for producing low defect density, ideal oxygen precipitating silicon |
| 04/24/2003 | WO2003033781A1 Low temperature epitaxial growth of quaternary wide bandgap semiconductors |
| 04/24/2003 | WO2002057519A9 Process for monitoring the gaseous environment of a crystal puller for semiconductor growth |
| 04/24/2003 | US20030076608 Thin film formation method, display, and color filter |
| 04/24/2003 | US20030075706 Terbium- or lutetium - containing garnet phosphors and scintillators for detection of high-energy radiation |
| 04/23/2003 | EP1304749A1 Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate |
| 04/23/2003 | EP1304399A1 Surface modification process of quartz glass crucible |
| 04/23/2003 | EP0807839B1 Optical window and method of manufacturing the same |
| 04/23/2003 | CN1413357A Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device |
| 04/22/2003 | US6551652 Applying a first sol for forming the piezoelectric film on a substrate having the lower electrode, to form a lower film, applying second sol having greater lead content than first sol to form upper film, heat treating the films |
| 04/22/2003 | US6550158 Substrate handling chamber |
| 04/17/2003 | WO2003031694A1 Preparation of feedstock of alkaline earth and alkali metal fluorides |
| 04/17/2003 | WO2002097173A3 Semi-insulating silicon carbide without vanadium domination |
| 04/17/2003 | WO2002057518A3 Apparatus and process for the preparation of low-iron_contamination single crystal silicon |
| 04/17/2003 | US20030073293 In situ growth of oxide and silicon layers |
| 04/17/2003 | US20030073104 Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus |
| 04/17/2003 | US20030072882 Method of depositing rare earth oxide thin films |
| 04/17/2003 | US20030072877 Apparatus and method for making free standing diamond |
| 04/17/2003 | US20030071276 Epitaxial growth of nitride semiconductor device |
| 04/17/2003 | US20030070607 Method for producing group III nitride compound semiconductor |
| 04/17/2003 | US20030070606 Loading a fluoride raw material into a chamber, exposing to a gas flow of fluoride at a predetermined temperature and storing in dry atmosphere |
| 04/17/2003 | US20030070605 Apparatas For Growing Jingle Crystal, Method For Producing Jingle Crystal Utilizing The Apparatas And Jingle Crystal |
| 04/17/2003 | US20030070585 Coating material for absorbing radiant heat, manufacturing method thereof |