| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 08/25/2004 | EP1144736B1 Agglomeration of silicon powders |
| 08/25/2004 | CN1524323A High repetition rate excimer laser system |
| 08/25/2004 | CN1523132A A method and system for producing thin films |
| 08/25/2004 | CN1522951A Method and apparatus for preparing pure silver single crystal nanometer thread |
| 08/25/2004 | CN1163982C Film piezoelectric device |
| 08/25/2004 | CN1163640C Single crystal SiC and process for preparing the same |
| 08/24/2004 | US6780242 Method for manufacturing high-quality manganese-doped semiconductor nanocrystals |
| 08/24/2004 | US6780238 Argon/ammonia rapid thermal annealing for silicon wafers |
| 08/24/2004 | US6780219 Method of spheridizing silicon metal powders |
| 08/19/2004 | WO2004071067A2 Data communication in a laboratory environment |
| 08/19/2004 | WO2004070798A1 Silicon semiconductor substrate and its manufacturing method |
| 08/19/2004 | WO2004070784A2 Microporous crystals and methods of making thereof |
| 08/19/2004 | WO2004070653A2 Image analysis system and method |
| 08/19/2004 | WO2004069409A2 Automated sample analysis system and method |
| 08/19/2004 | WO2002082047A8 High throughput screening of crystallization of materials |
| 08/19/2004 | US20040159854 Thin film device and its fabrication method |
| 08/19/2004 | DE10156137B4 Verfahren zur Herstellung eines Kieselglastiegels mit kristallinen Bereichen aus einem porösen Kieselglasgrünkörper A method for producing a silica glass crucible with the crystalline areas of a porous silica glass green body |
| 08/19/2004 | DE10007179B4 Verfahren und Vorrichtung zum Dotieren einer Schmelze mit einem Dotierstoff Method and apparatus for doping a melt with a dopant |
| 08/18/2004 | EP1447464A1 CRYSTAL PRODUCTION METHOD FOR GALLIUM OXIDE−IRON MIXED CRYSTAL |
| 08/18/2004 | EP1447459A2 A method and system for producing thin films |
| 08/18/2004 | EP1447457A1 Process for strengthen grain boundaries of an article made from a Ni based superalloy |
| 08/18/2004 | EP1446695A2 Semiconductor liquid crystal composition and methods for making the same |
| 08/18/2004 | EP1446517A1 Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
| 08/18/2004 | CN1522255A Process for the isolation of crystalline imipenem |
| 08/17/2004 | US6777690 Organic film vapor deposition method and a scintillator panel |
| 08/17/2004 | US6777315 Method of controlling the resistivity of Gallium Nitride |
| 08/17/2004 | US6776842 First thin epitaxial deposition, then an anneal; the conditions and duration such that arsenic diffusion length is lower than thickness of the layer, then second epitaxial deposition to desired thickness; avoids autodoping of arsenic |
| 08/17/2004 | US6776841 Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer |
| 08/17/2004 | US6776840 Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process |
| 08/12/2004 | WO2004068556A2 Semiconductor structures with structural homogeneity |
| 08/12/2004 | WO2004067812A1 Diamond composite substrate and process for producing the same |
| 08/12/2004 | WO2004066894A1 Marking of diamond |
| 08/12/2004 | US20040157412 Method to produce germanium layers |
| 08/12/2004 | US20040155573 Diamond high brightness ultraviolet ray emitting element |
| 08/12/2004 | US20040155310 CdTe-base compound semiconductor single crystal for electro-optic element |
| 08/12/2004 | US20040155305 Piezoelectric crystal material and piezoelectric resonator |
| 08/12/2004 | US20040155255 the ratio of activation of the dopants can be increased by the method of co-doping two dopants (co-doping method) into the crystal by using a doping amount smaller than that in the earlier technology; improved crystallinity |
| 08/12/2004 | US20040154527 Crystal growth methods |
| 08/11/2004 | EP1445858A1 Piezoelectric crystal material and piezoelectric resonator |
| 08/11/2004 | EP1445340A2 Method for producing monocrystalline metallic wire |
| 08/11/2004 | EP1444390A2 Apparatus and method for diamond production |
| 08/11/2004 | EP1444388A1 Mcraly-coating |
| 08/11/2004 | EP1444387A1 Preparation of feedstock of alkaline earth and alkali metal fluorides |
| 08/11/2004 | EP1185726B1 Melt depth control for semiconductor materials grown from a melt |
| 08/11/2004 | EP0989211B1 Process for obtaining diamond layers by gaseous-phase synthesis |
| 08/11/2004 | CN1519581A 闪烁体面板 The scintillator panel |
| 08/11/2004 | CN1519399A Method of mfg. monocrystal |
| 08/11/2004 | CN1519397A Method and equipment for growing large sectional monocrystal of potassium dihydrogen phosphate category |
| 08/10/2004 | US6774556 Device with Mn2+ activated green emitting SrAl12O19 luminescent material |
| 08/10/2004 | US6774410 Epitaxial growth of nitride semiconductor device |
| 08/10/2004 | US6774088 Rare earth-Ba-Cu complex composition and method of producing superconductor using same |
| 08/10/2004 | US6774040 Apparatus and method for surface finishing a silicon film |
| 08/10/2004 | US6773508 Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same |
| 08/10/2004 | US6773505 Method for the sublimation growth of an SiC single crystal, involving heating under growth pressure |
| 08/10/2004 | US6773504 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate |
| 08/10/2004 | US6773503 Method of heat-treating fluoride crystal, method of producing optical part, and optical apparatus |
| 08/10/2004 | US6773501 Method of making a <250 nm wavelength optical fluoride crystal and device |
| 08/05/2004 | WO2004066361A2 Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same |
| 08/05/2004 | WO2004066307A2 Stacked memory cell having diffusion barriers |
| 08/05/2004 | WO2004065667A1 Process for producing single crystal |
| 08/05/2004 | WO2004065666A1 Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafe |
| 08/05/2004 | WO2004065294A2 Systems and methods for producing single-walled carbon nanotubes (swnts) on a substrate |
| 08/05/2004 | US20040152319 Processing apparatus for processing substrate by process solution |
| 08/05/2004 | US20040151912 Chemical monolayer field emitter device |
| 08/05/2004 | US20040151652 Method for producing highly pure, granular silicon in a fluidised bed |
| 08/05/2004 | US20040149917 Scintillator crystals, manufacturing method and application of these crystals |
| 08/05/2004 | US20040149201 Method for preparing single crystal |
| 08/05/2004 | DE19924649B4 Halbleiterscheiben mit Kristallgitter-Defekten und Verfahren zur Herstellung derselben Semiconductor wafers having lattice defects and process for producing same |
| 08/04/2004 | EP1442163A1 Method of growing a mcraly-coating and an article coated with the mcraly-coating |
| 08/04/2004 | EP1442162A2 Substrate for epitaxy |
| 08/04/2004 | EP1324959B1 Electrophoretically redensified sio2 - moulded body, method for the production and use thereof |
| 08/04/2004 | EP0921214B1 Single crystal silicon carbide and process for preparing the same |
| 08/03/2004 | US6770914 III nitride semiconductor substrate for ELO |
| 08/03/2004 | US6770913 ZnOSSe compound semiconductor, integrated circuit using the semiconductor and method of manufacturing the semiconductor and the integrated circuit |
| 08/03/2004 | US6770137 Crucible; seed crystal; pressure of the mixture gas in the growth room is kept larger than that of the mixture gas after exhausted from the crucible. |
| 08/03/2004 | US6770136 Device having a foil-lined crucible for the sublimation growth of an SiC single crystal |
| 08/03/2004 | CA2454572A1 Crystalline pde4d2 catalytic domain complex, and methods for making and employing same |
| 07/29/2004 | WO2004063429A1 Method for the production of monocrystalline structures and component |
| 07/29/2004 | US20040146811 filling a monomer solution into interstices of colloidal crystals for photopolymerization inside them; masking; not only more simplified two-dimensional patterns but also complicated two- or three-dimensional patterns can be obtained |
| 07/29/2004 | US20040146735 Comprises enhanced crystalline domain, eleveated aspect ratio, small diameter, and increased length; alloys; electronics |
| 07/29/2004 | US20040144970 Nanowires |
| 07/29/2004 | DE102004003831A1 Kristallwachstumsverfahren Crystal growth method |
| 07/28/2004 | EP1441426A1 Method for fabricating semiconductor light emitting element, semiconductor light emitting element, method for fabricating semiconductor element, semiconductor element, method for fabricating element and element |
| 07/28/2004 | EP1440461A2 High resistivity silicon carbide single crystal |
| 07/28/2004 | EP1440187A2 Powder metallurgy tungsten crucible for aluminum nitride crystal growth |
| 07/28/2004 | EP1392484A4 High throughput screening of crystalization of materials |
| 07/28/2004 | CN1515712A Method for mfg. graphite nano fiber, electronic transmitting source and display element |
| 07/28/2004 | CN1515494A Production method of crystal alum |
| 07/28/2004 | CN1159213C B0.4-0.6 C0.1-0.3 No.1-0.3 crystal with orthogonal structure and its preparing process |
| 07/27/2004 | US6768762 High repetition rate UV excimer laser |
| 07/27/2004 | US6768135 Dual process semiconductor heterostructures |
| 07/27/2004 | US6767848 Silicon semiconductor substrate and method for production thereof |
| 07/27/2004 | US6767582 Method of modifying source chemicals in an ald process |
| 07/27/2004 | US6767401 Crystal forming apparatus and method for using same |
| 07/27/2004 | US6767400 Crystal growth method |
| 07/22/2004 | WO2004061167A1 LOW-RESISTANCE n TYPE SEMICONDUCTOR DIAMOND AND PROCESS FOR PRODUCING THE SAME |
| 07/22/2004 | US20040142824 depositing a RBa2Cu3O7-layer with a high growth rateonto a RBa2Cu3O7 layer with a low growth rate, where R and X are yttrium and/or a rare earth metal; preferably a biaxially textured substrate |
| 07/22/2004 | US20040142550 Method for producing III-IV group compound semiconductor layer, method for producing semiconductor light emitting element, and vapor phase growing apparatus |
| 07/22/2004 | US20040142211 Chemical monolayer memory device |
| 07/22/2004 | US20040141453 Micro-electronic junctions devices containing same |