Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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05/31/2005 | US6899928 Dual ion beam assisted deposition of biaxially textured template layers |
05/31/2005 | US6899762 Epitaxially coated semiconductor wafer and process for producing it |
05/31/2005 | US6899761 Single crystals of lead magnesium niobate-lead titanate |
05/31/2005 | US6899760 Silicon single crystal growing furnace supplemented with low melting point dopant feeding instrument and the low melting point dopant feeding method thereof |
05/31/2005 | US6899759 Single crystal production method |
05/31/2005 | US6899758 Method and apparatus for growing single crystal |
05/26/2005 | WO2005048332A1 Method for manufacturing compound semiconductor epitaxial substrate |
05/26/2005 | WO2005048331A1 Process for producing silicon epitaxial wafer |
05/26/2005 | WO2005048297A2 Nanostructures including a metal |
05/26/2005 | WO2005047575A1 Colloidal structure and method of forming |
05/26/2005 | WO2005010965A3 METHOD AND STRUCTURE OF STRAIN CONTROL OF SiGe BASED PHOTODETECTORS AND MODULATORS |
05/26/2005 | WO2004069984A3 Automated imaging system and method |
05/26/2005 | US20050112855 Method and apparatus for doping semiconductors |
05/26/2005 | US20050112849 Method of preparing nanocrystals |
05/26/2005 | US20050112793 Methods of forming a high conductivity diamond film and structures formed thereby |
05/26/2005 | US20050112281 Growth of dilute nitride compounds |
05/26/2005 | US20050112051 Systems and methods for producing single-walled carbon nanotubes (SWNTS) on a substrate |
05/26/2005 | US20050112048 Using catalyst; exposure substrate to metal vapors and carbon containing compound; carbonization |
05/26/2005 | US20050109818 Welding method |
05/26/2005 | US20050109282 Method for manufacturing diamond coatings |
05/26/2005 | US20050109270 Optical lithography fluoride crystal annealing furnace |
05/26/2005 | US20050109269 Shaped nanocrystal particles and methods for working the same |
05/25/2005 | EP1533402A1 Epitaxial wafer and its manufacturing method |
05/25/2005 | EP1532297A1 Quartz glass crucible for pulling up silicon single crystal and method for producing the same |
05/25/2005 | EP1532288A2 A hybrid beam deposition system and methods for fabricating zno films, p-type zno films, and zno-based ii-vi compound semiconductor devices |
05/25/2005 | EP1330562B1 Method for the production of low defect density silicon |
05/25/2005 | DE10196361T5 Verfahren zur Herstellung eines Gruppe-III-Nitrid-Halbleiterkristalls, Verfahren zur Herstellung eines Verbindungshalbleiters auf Basis von Galliumnitrid, ein Verbindungshalbleiter auf Basis von Galliumnitrid, ein lichtemittierendes Bauelement aus einem Verbindungshalbleiter auf Basis von Galliumnitrid und eine Lichtquelle, die das lichtemittierende Halbleiterbauelement verwendet A method for producing a group III nitride semiconductor crystal, method of manufacturing a compound semiconductor based on gallium nitride, a compound semiconductor based on gallium nitride, a light emitting device made of a compound semiconductor on the basis of gallium nitride and a light source using the light-emitting semiconductor component |
05/25/2005 | CN1619775A Fabrication method for polycrystalline silicon thin film and apparatus using the same |
05/25/2005 | CN1618560A Welding method |
05/25/2005 | CN1203349C Magnetic garnet material and photomagnetic device using the same material |
05/24/2005 | US6897483 Second gallium nitride layers that extend into trenches in first gallium nitride layers |
05/24/2005 | US6896731 P-type single crystal zinc-oxide having low resistivity and method for preparation thereof |
05/24/2005 | US6896729 Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control |
05/24/2005 | US6896728 Process for producing low defect density, ideal oxygen precipitating silicon |
05/24/2005 | CA2206884C Single crystal of nitride and process for preparing the same |
05/19/2005 | WO2005009900A3 Method for producing graphitic carbon nanocomposites in particular nanopearls in bulk or in an individual manner |
05/19/2005 | US20050106883 Crystal manufacturing method |
05/19/2005 | US20050106877 Method for depositing nanolaminate thin films on sensitive surfaces |
05/19/2005 | US20050106423 Carbonceous substrate such as graphite, coated by silicon carbide with reduced nitrogen and boron imputities; used as tools or jigs for the production of epitaxial layers of SiC semiconductors |
05/19/2005 | US20050105038 Thin film multilayer body, electronic device and actuator using the thin film multilayer body, and method of manufacturing the actuator |
05/19/2005 | US20050104082 Nitride semiconductor substrate and its production method |
05/19/2005 | US20050103259 Method of growing selective area by metal organic chemical vapor deposition |
05/19/2005 | US20050103258 Epitaxial organic layered structure and method for making |
05/19/2005 | US20050103257 Large area, uniformly low dislocation density GaN substrate and process for making the same |
05/19/2005 | US20050103256 High resistivity silicon wafers |
05/19/2005 | US20050103255 Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing |
05/18/2005 | EP1531511A2 Electrolyte-electrode assembly and method for producing the same |
05/18/2005 | EP1530800A2 Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
05/18/2005 | CN1618122A An oxide layer on a GAAS-based semiconductor structure and method of forming same |
05/18/2005 | CN1617300A Fabrication method for polycrystalline silicon thin film and display device fabricated using the same |
05/18/2005 | CN1202291C Method for making gallium nitride crystal |
05/18/2005 | CN1202290C Method and system for controlling growth of silicon single crystal |
05/17/2005 | US6894323 Group III nitride semiconductor device and its method of manufacture |
05/17/2005 | US6894284 UV optical fluoride crystal elements for λ < 200nm laser lithography and methods therefor |
05/17/2005 | US6893993 Polycrystalline material, process for producing thereof, and articles manufactured therefrom |
05/17/2005 | US6893945 Method for manufacturing gallium nitride group compound semiconductor |
05/17/2005 | US6893886 Method for processing one-dimensional nano-materials |
05/17/2005 | US6893498 Method and apparatus for adjusting lithium oxide concentration in wafers |
05/12/2005 | WO2005043604A2 Growth and integration of epitaxial gallium nitride films with silicon-based devices |
05/12/2005 | WO2005042812A1 Scintillation substances (variants) |
05/12/2005 | WO2005042811A1 Process for producing single crystal |
05/12/2005 | WO2005022590A3 Method of producing biaxially textured buffer layers and related articles, devices and systems |
05/12/2005 | WO2005021841A3 Methods and apparatus for rapid crystallization of biomolecules |
05/12/2005 | US20050101133 Method for making negative thermal expansion material zirconium tungstate |
05/12/2005 | US20050101063 Three-terminal field-controlled molecular devices |
05/12/2005 | US20050100770 Electrolyte-electrode assembly and method for producing the same |
05/12/2005 | US20050099111 Method for the preparation of graphite nanofibers and emitter and display elements comprising the nanofibers |
05/12/2005 | US20050098234 Element fabrication substrate |
05/12/2005 | US20050098090 Group III Nitride Crystal, Method of Its Manufacture, and Equipment for Manufacturing Group III Nitride Crystal |
05/12/2005 | US20050098089 Process for producing single-crystal gallium nitride |
05/11/2005 | CN1614103A Preparation for r-Li ALO2 single-crystal thin-film covering layer substrate by pulsing laser deposition |
05/10/2005 | US6890781 Transparent layer of a LED device and the method for growing the same |
05/06/2005 | WO2005041305A1 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby |
05/06/2005 | WO2005041283A1 Gallium nitride semiconductor substrate and process for producing the same |
05/06/2005 | WO2005041279A1 PROCESS FOR PRODUCING n-TYPE SEMICONDUCTOR DIAMOND AND n-TYPE SEMICONDUCTOR DIAMOND |
05/06/2005 | WO2005041253A2 Methods for forming superconductor articles and xrd methods for characterizing same |
05/06/2005 | WO2005040453A2 Control of carbon nanotube diameter using cvd or pecvd growth |
05/06/2005 | CA2542704A1 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby |
05/05/2005 | US20050095861 GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semiconductor device, and methods of making the same |
05/05/2005 | US20050095445 ZnO-type compound film having a single crystal structure contains V, Cr, Fe, Co, Ni, Rh and/or Ru, each of which is alloyed with the compound and may also contain Ti, Mn, and/or Cu; exhibits desired ferromagnetic characteristics, such as ferromagnetic transition temperature |
05/05/2005 | US20050093101 Method of Manufacturing Nitride Substrate for Semiconductors, and Nitride Semiconductor Substrate |
05/05/2005 | US20050093098 Semiconductor device and method for fabricating the same |
05/05/2005 | US20050093003 III-V group nitride system semiconductor substrate |
05/05/2005 | US20050092236 System for continuous growing of monocrystalline silicon |
05/05/2005 | US20050092235 Epitaxial semiconductor deposition methods and structures |
05/05/2005 | US20050092234 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate |
05/05/2005 | US20050092232 Method and apparatus for making a crystal pre-melt |
05/05/2005 | US20050092231 Method and apparatus for making crystals without a pre-melt step |
05/05/2005 | US20050092230 Method for fabricating a semiconductor crystal |
05/04/2005 | EP1528591A2 Method of manufacturing nitride substrate for semiconductors, and nitride semiconductor substrate |
05/04/2005 | EP1528590A2 Method for producing a nitride semiconductor crystal layer, nitride semiconductor crystal layer and substrate for producing the same |
05/04/2005 | EP1528121A2 Silicon carbide-coated carbonaceous material |
05/04/2005 | EP1527362A1 Scatter-free uv optical fluoride crystal elements for below 200 nm laser lithography and methods |
05/04/2005 | CN1612956A Coloured diamond |
05/04/2005 | CN1612955A Boron doped diamond |
05/04/2005 | CN1612295A Group III nitride crystal, method of its manufacture, and equipment for manufacturing group III nitride crystal |
05/04/2005 | CN1612290A Method of manufacturing nitride substrate for semiconductors, and nitride semiconductor substrate |
05/04/2005 | CN1611642A Non-linear optical crystal material potassium pentavanadate |
05/04/2005 | CN1611641A Birefraction functional material potassium pentavanadate crystal |
05/04/2005 | CN1611635A Silicon carbide-coated carbonaceous material and carbonaceous material to be coated with silicon carbide |