Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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04/06/2005 | CN1195705C Monocrystalline ferrite fines |
04/05/2005 | US6875708 Method of producing diamond film and diamond film produced thereby |
04/05/2005 | US6875275 Production apparatus for producing a crystal |
04/05/2005 | US6875274 Carbon nanotube-nanocrystal heterostructures and methods of making the same |
04/05/2005 | US6875273 Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor |
04/05/2005 | US6875270 Magnetic garnet single-crystal film and method of producing the same, and Faraday rotator comprising the same |
04/05/2005 | US6875082 Nitride semiconductor wafer and method of processing nitride semiconductor wafer |
04/05/2005 | US6874713 Separating mixture of polycrystalline wafers using screens having disks, conveyors and drives; reuse as raw materials |
04/03/2005 | CA2480837A1 Nitride semiconductor substrate and method of producing same |
03/31/2005 | WO2005029550A2 Method and system for producing crystalline thin films with a uniform crystalline orientation |
03/31/2005 | US20050070106 Method for preparing group IV nanocrystals with chemically accessible surfaces |
03/31/2005 | US20050070076 Method of depositing high-quality sige on sige substrates |
03/31/2005 | US20050067629 Semimetal semiconductor |
03/31/2005 | US20050067604 formed by hydrothermal treatment; x-ray diffraction |
03/31/2005 | US20050067062 alloys of nickel, chromium, cobalt, tungsten, rhenium, tantalum, titanium, aluminum, hafnium, molybdenu, zirconium, rare-earth elements and carbon, oxygen or nitrogen impurities, having creep resistance, used in jet engines and turbines for performance and efficiency |
03/31/2005 | US20050066892 Deposition of silicon-containing films from hexachlorodisilane |
03/31/2005 | US20050066886 Method of fabrication of a substrate for an epitaxial growth |
03/31/2005 | US20050066885 Group III-nitride semiconductor substrate and its manufacturing method |
03/31/2005 | US20050066879 Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal |
03/31/2005 | US20050066878 Methods for producing group III nitride materials |
03/30/2005 | EP1519409A1 A method of fabrication of a substrate for an epitaxial growth |
03/30/2005 | EP1518947A2 Method of producing single-polarized lithium tantalate crystal and crystal thereby obtained. |
03/30/2005 | EP1518827A1 Cristalline material IM-12 and process for its manufacture |
03/30/2005 | EP1518009A1 Process for obtaining of bulk monocrystallline gallium-containing nitride |
03/30/2005 | CN1601701A Method for fabricating SIGE substrate materials on metastable insulator and substrate materials |
03/30/2005 | CN1600906A Large size non-linear optic crystal of boron phosphate, flux growth method and usage |
03/30/2005 | CN1195107C Silicon ingot growing device |
03/29/2005 | US6872252 Lead-based perovskite buffer for forming indium phosphide on silicon |
03/29/2005 | US6872248 Liquid-phase growth process and liquid-phase growth apparatus |
03/29/2005 | US6872236 Electrodeposition of metals on nanotubes using plasma arcs having graphite anodes and cathodes |
03/24/2005 | US20050065049 Chemical composition for use with group IIA metal fluorides |
03/24/2005 | US20050064632 Soi wafer and method for manufacturing soi wafer |
03/24/2005 | US20050064246 Single crystals; reducing stresses; melt processability |
03/24/2005 | US20050064206 Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate,and method of manufacturing |
03/24/2005 | US20050064158 Noncatalytically forming a nanowire on a substrate from an organometallic vapor without any type of reducing agent; use of Copper (ethylacetoacetate)trialkyl phosphite as copper precursor for example; integrated circuits |
03/24/2005 | US20050064098 thin metal films by atomic layer deposition: tungsten nucleation layer over a silicon wafer; copper film from CuCl and triethylboron; vapor phase pulses in inert gas |
03/24/2005 | US20050063894 Dispersion management optical lithography crystals for below 160nm optical lithography & method thereof |
03/24/2005 | US20050062392 Discharge electrode, a discharge lamp and a method for manufacturing the discharge electrode |
03/24/2005 | US20050062011 Single crystal of potassium tantalate and an alkali metal or the group (V) metal; cubic form of perovskite crystalline structure is essentially free of impurities and defects; microwave resonator containing the single crystal, useful in RF and EPR applications |
03/24/2005 | US20050061229 Optical spinel articles and methods for forming same |
03/24/2005 | US20050061228 Process for strengthen grain boundaries of an article made from a Ni based superalloy |
03/23/2005 | EP1517368A2 Protection of a SiC surface via a GaN-layer |
03/23/2005 | EP1516078A2 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon |
03/23/2005 | CN1599032A Growth GaN film on silicon substrate using hydride vapaur phase epitaxial method |
03/23/2005 | CN1599031A Method of preparing high quality non-polar GaN self-support substrate |
03/23/2005 | CN1598083A Process for preparing calcium sulfate whisker |
03/23/2005 | CN1598082A Non-linear optical crystal potassium sodium alumino borate and its preparation process and application |
03/23/2005 | CN1598081A Technology for continuous producing four-feet shape zine oxide whisker and rotating furnace thereof |
03/23/2005 | CN1598078A Process for growing calcium borate mono crystal by melt drawing |
03/23/2005 | CN1598077A Technology for preparing loaded mono dispersing nano crystal |
03/23/2005 | CN1598076A Process for growing zine oxide monocrystal by hot water method |
03/23/2005 | CN1598022A Monocrystalline nickel-base alloy with high flexing antioxygenizing and its preparation |
03/23/2005 | CN1194382C Silicon-semiconductor lining and its producing method |
03/22/2005 | US6869702 Substrate for epitaxial growth |
03/22/2005 | US6869478 Method for producing silicon single crystal having no flaw |
03/17/2005 | US20050059257 Highly crystalline aluminum nitride multi-layered substrate and production process thereof |
03/17/2005 | US20050059229 Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same |
03/17/2005 | US20050056204 Rare earth silicate single crystal and process for production of rare earth silicate single crystals |
03/17/2005 | US20050056119 Preparation of magnetic metal-filled carbon nanocapsules |
03/17/2005 | DE102004040053A1 Production of a silicon single crystal comprises drawing a single crystal using the Czochralski method and a silicon seed crystal which has no empty site excess region on a contact surface between the crystal and a starting material |
03/16/2005 | EP1514958A1 Bulk single crystal production facility employing supercritical ammonia |
03/16/2005 | EP1514838A1 Process for producing nanoparticle and nanoparticle produced by the process |
03/16/2005 | EP1514297A2 Method for epitaxial growth of a gallium nitride film separated from its substrate |
03/16/2005 | EP1446695A4 Semiconductor liquid crystal composition and methods for making the same |
03/16/2005 | CN1594674A Wet-solid phase reaction preparation method for cadmium sulfide semiconductor nanocrystalline |
03/16/2005 | CN1594673A Preparation process for lithium niobate crystal with near stoichiometric ratio |
03/16/2005 | CN1594671A Process for collimated beam shaped nano zinc oxide crystal whisker |
03/16/2005 | CN1594670A Preparation method for C-axis preferred orientation single crystal ZnO hexagonus microtubule |
03/16/2005 | CN1594083A B6O nanowire and crystal whisker structure and its preparation method |
03/15/2005 | CA2338314C Semiconductor thin film and thin film device |
03/10/2005 | WO2005022655A1 Algainn based optical device and fabrication method thereof |
03/10/2005 | WO2005022590A2 Method of producing biaxially textured buffer layers and related articles, devices and systems |
03/10/2005 | WO2005022565A1 Nano-particle device and method for manufacturing nano-particle device |
03/10/2005 | WO2005022120A2 Process for producing nanocrystals and nanocrystals produced thereby |
03/10/2005 | WO2005021841A2 Methods and apparatus for rapid crystallization of biomolecules |
03/10/2005 | WO2005021608A1 Catalyst support |
03/10/2005 | WO2005010231A3 Cvd method for the deposition of at least one iii-vn layer on a substrate |
03/10/2005 | WO2004046023A3 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission |
03/10/2005 | US20050054131 Solution to thermal budget |
03/10/2005 | US20050054124 Silicon wafers and method of fabricating the same |
03/10/2005 | US20050051795 Epitaxial growth of relaxed silicon germanium layers |
03/10/2005 | US20050051080 Method and apparatus for growing multiple crystalline ribbons from a single crucible |
03/10/2005 | CA2537636A1 Methods and apparatus for rapid crystallization of biomolecules |
03/10/2005 | CA2528949A1 Method of producing biaxially textured buffer layers and related articles, devices and systems |
03/10/2005 | CA2518352A1 Process for producing nanocrystals and nanocrystals produced thereby |
03/09/2005 | EP1513193A1 Method for manufacturing silicon wafer |
03/09/2005 | EP1512699A1 Catalyst Support |
03/09/2005 | EP1218573B1 Method and device for depositing materials with a large electronic energy gap and high binding energy |
03/09/2005 | CN1592949A High resistivity silicon carbide single crystal and mfg. method |
03/09/2005 | CN1592801A Terbium paramagnetic garnet single crystal and magneto-optical device |
03/09/2005 | CN1591783A Molecular beam epitaxy growth apparatus and method of controlling same |
03/09/2005 | CN1591781A Silicon wafers and method of fabricating the same |
03/09/2005 | CN1590600A III-V nitride semiconductor substrate and its production method |
03/09/2005 | CN1590599A Silicon nono-wire and its preparation method |
03/08/2005 | US6863943 Semiconducting oxide nanostructures |
03/08/2005 | US6863847 Method for producing sphere-based crystals |
03/08/2005 | US6863727 Method of depositing transition metal nitride thin films |
03/03/2005 | WO2005019508A1 Ferroelectric thin-film production method, voltage-application etching apparatus, ferroelectric crystal thin-film substrate, and ferroelectric crystal wafer |
03/03/2005 | WO2005019507A1 Magnetic garnet single crystal and yig device |
03/03/2005 | WO2005019506A1 Process for producing single crystal and silicon single crystal wafer |