Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
04/2005
04/06/2005CN1195705C Monocrystalline ferrite fines
04/05/2005US6875708 Method of producing diamond film and diamond film produced thereby
04/05/2005US6875275 Production apparatus for producing a crystal
04/05/2005US6875274 Carbon nanotube-nanocrystal heterostructures and methods of making the same
04/05/2005US6875273 Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor
04/05/2005US6875270 Magnetic garnet single-crystal film and method of producing the same, and Faraday rotator comprising the same
04/05/2005US6875082 Nitride semiconductor wafer and method of processing nitride semiconductor wafer
04/05/2005US6874713 Separating mixture of polycrystalline wafers using screens having disks, conveyors and drives; reuse as raw materials
04/03/2005CA2480837A1 Nitride semiconductor substrate and method of producing same
03/2005
03/31/2005WO2005029550A2 Method and system for producing crystalline thin films with a uniform crystalline orientation
03/31/2005US20050070106 Method for preparing group IV nanocrystals with chemically accessible surfaces
03/31/2005US20050070076 Method of depositing high-quality sige on sige substrates
03/31/2005US20050067629 Semimetal semiconductor
03/31/2005US20050067604 formed by hydrothermal treatment; x-ray diffraction
03/31/2005US20050067062 alloys of nickel, chromium, cobalt, tungsten, rhenium, tantalum, titanium, aluminum, hafnium, molybdenu, zirconium, rare-earth elements and carbon, oxygen or nitrogen impurities, having creep resistance, used in jet engines and turbines for performance and efficiency
03/31/2005US20050066892 Deposition of silicon-containing films from hexachlorodisilane
03/31/2005US20050066886 Method of fabrication of a substrate for an epitaxial growth
03/31/2005US20050066885 Group III-nitride semiconductor substrate and its manufacturing method
03/31/2005US20050066879 Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal
03/31/2005US20050066878 Methods for producing group III nitride materials
03/30/2005EP1519409A1 A method of fabrication of a substrate for an epitaxial growth
03/30/2005EP1518947A2 Method of producing single-polarized lithium tantalate crystal and crystal thereby obtained.
03/30/2005EP1518827A1 Cristalline material IM-12 and process for its manufacture
03/30/2005EP1518009A1 Process for obtaining of bulk monocrystallline gallium-containing nitride
03/30/2005CN1601701A Method for fabricating SIGE substrate materials on metastable insulator and substrate materials
03/30/2005CN1600906A Large size non-linear optic crystal of boron phosphate, flux growth method and usage
03/30/2005CN1195107C Silicon ingot growing device
03/29/2005US6872252 Lead-based perovskite buffer for forming indium phosphide on silicon
03/29/2005US6872248 Liquid-phase growth process and liquid-phase growth apparatus
03/29/2005US6872236 Electrodeposition of metals on nanotubes using plasma arcs having graphite anodes and cathodes
03/24/2005US20050065049 Chemical composition for use with group IIA metal fluorides
03/24/2005US20050064632 Soi wafer and method for manufacturing soi wafer
03/24/2005US20050064246 Single crystals; reducing stresses; melt processability
03/24/2005US20050064206 Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate,and method of manufacturing
03/24/2005US20050064158 Noncatalytically forming a nanowire on a substrate from an organometallic vapor without any type of reducing agent; use of Copper (ethylacetoacetate)trialkyl phosphite as copper precursor for example; integrated circuits
03/24/2005US20050064098 thin metal films by atomic layer deposition: tungsten nucleation layer over a silicon wafer; copper film from CuCl and triethylboron; vapor phase pulses in inert gas
03/24/2005US20050063894 Dispersion management optical lithography crystals for below 160nm optical lithography & method thereof
03/24/2005US20050062392 Discharge electrode, a discharge lamp and a method for manufacturing the discharge electrode
03/24/2005US20050062011 Single crystal of potassium tantalate and an alkali metal or the group (V) metal; cubic form of perovskite crystalline structure is essentially free of impurities and defects; microwave resonator containing the single crystal, useful in RF and EPR applications
03/24/2005US20050061229 Optical spinel articles and methods for forming same
03/24/2005US20050061228 Process for strengthen grain boundaries of an article made from a Ni based superalloy
03/23/2005EP1517368A2 Protection of a SiC surface via a GaN-layer
03/23/2005EP1516078A2 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
03/23/2005CN1599032A Growth GaN film on silicon substrate using hydride vapaur phase epitaxial method
03/23/2005CN1599031A Method of preparing high quality non-polar GaN self-support substrate
03/23/2005CN1598083A Process for preparing calcium sulfate whisker
03/23/2005CN1598082A Non-linear optical crystal potassium sodium alumino borate and its preparation process and application
03/23/2005CN1598081A Technology for continuous producing four-feet shape zine oxide whisker and rotating furnace thereof
03/23/2005CN1598078A Process for growing calcium borate mono crystal by melt drawing
03/23/2005CN1598077A Technology for preparing loaded mono dispersing nano crystal
03/23/2005CN1598076A Process for growing zine oxide monocrystal by hot water method
03/23/2005CN1598022A Monocrystalline nickel-base alloy with high flexing antioxygenizing and its preparation
03/23/2005CN1194382C Silicon-semiconductor lining and its producing method
03/22/2005US6869702 Substrate for epitaxial growth
03/22/2005US6869478 Method for producing silicon single crystal having no flaw
03/17/2005US20050059257 Highly crystalline aluminum nitride multi-layered substrate and production process thereof
03/17/2005US20050059229 Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same
03/17/2005US20050056204 Rare earth silicate single crystal and process for production of rare earth silicate single crystals
03/17/2005US20050056119 Preparation of magnetic metal-filled carbon nanocapsules
03/17/2005DE102004040053A1 Production of a silicon single crystal comprises drawing a single crystal using the Czochralski method and a silicon seed crystal which has no empty site excess region on a contact surface between the crystal and a starting material
03/16/2005EP1514958A1 Bulk single crystal production facility employing supercritical ammonia
03/16/2005EP1514838A1 Process for producing nanoparticle and nanoparticle produced by the process
03/16/2005EP1514297A2 Method for epitaxial growth of a gallium nitride film separated from its substrate
03/16/2005EP1446695A4 Semiconductor liquid crystal composition and methods for making the same
03/16/2005CN1594674A Wet-solid phase reaction preparation method for cadmium sulfide semiconductor nanocrystalline
03/16/2005CN1594673A Preparation process for lithium niobate crystal with near stoichiometric ratio
03/16/2005CN1594671A Process for collimated beam shaped nano zinc oxide crystal whisker
03/16/2005CN1594670A Preparation method for C-axis preferred orientation single crystal ZnO hexagonus microtubule
03/16/2005CN1594083A B6O nanowire and crystal whisker structure and its preparation method
03/15/2005CA2338314C Semiconductor thin film and thin film device
03/10/2005WO2005022655A1 Algainn based optical device and fabrication method thereof
03/10/2005WO2005022590A2 Method of producing biaxially textured buffer layers and related articles, devices and systems
03/10/2005WO2005022565A1 Nano-particle device and method for manufacturing nano-particle device
03/10/2005WO2005022120A2 Process for producing nanocrystals and nanocrystals produced thereby
03/10/2005WO2005021841A2 Methods and apparatus for rapid crystallization of biomolecules
03/10/2005WO2005021608A1 Catalyst support
03/10/2005WO2005010231A3 Cvd method for the deposition of at least one iii-vn layer on a substrate
03/10/2005WO2004046023A3 Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
03/10/2005US20050054131 Solution to thermal budget
03/10/2005US20050054124 Silicon wafers and method of fabricating the same
03/10/2005US20050051795 Epitaxial growth of relaxed silicon germanium layers
03/10/2005US20050051080 Method and apparatus for growing multiple crystalline ribbons from a single crucible
03/10/2005CA2537636A1 Methods and apparatus for rapid crystallization of biomolecules
03/10/2005CA2528949A1 Method of producing biaxially textured buffer layers and related articles, devices and systems
03/10/2005CA2518352A1 Process for producing nanocrystals and nanocrystals produced thereby
03/09/2005EP1513193A1 Method for manufacturing silicon wafer
03/09/2005EP1512699A1 Catalyst Support
03/09/2005EP1218573B1 Method and device for depositing materials with a large electronic energy gap and high binding energy
03/09/2005CN1592949A High resistivity silicon carbide single crystal and mfg. method
03/09/2005CN1592801A Terbium paramagnetic garnet single crystal and magneto-optical device
03/09/2005CN1591783A Molecular beam epitaxy growth apparatus and method of controlling same
03/09/2005CN1591781A Silicon wafers and method of fabricating the same
03/09/2005CN1590600A III-V nitride semiconductor substrate and its production method
03/09/2005CN1590599A Silicon nono-wire and its preparation method
03/08/2005US6863943 Semiconducting oxide nanostructures
03/08/2005US6863847 Method for producing sphere-based crystals
03/08/2005US6863727 Method of depositing transition metal nitride thin films
03/03/2005WO2005019508A1 Ferroelectric thin-film production method, voltage-application etching apparatus, ferroelectric crystal thin-film substrate, and ferroelectric crystal wafer
03/03/2005WO2005019507A1 Magnetic garnet single crystal and yig device
03/03/2005WO2005019506A1 Process for producing single crystal and silicon single crystal wafer