C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
11/2004
11/30/2004	US6824610 Process for producing gallium nitride crystal substrate, and gallium nitride crystal substrate
11/25/2004	WO2004102619A2 Chemical vapor deposition epitaxial growth
11/25/2004	WO2004101868A1 Method for producing single crystal and single crystal
11/25/2004	WO2004101867A1 Silicon epitaxial wafer, and silicon epitaxial wafer producing method
11/25/2004	WO2004101711A1 TRANSITION METAL DOPED SPINEL TYPE MgAl2O4 PHOSPHOR, LASER APPARATUS INCLUDING THE SAME AND PROCESS FOR PRODUCING THE PHOSPHOR
11/25/2004	WO2004101430A1 Method for preparation of metal nano-rod and use thereof
11/25/2004	US20040235671 Permanent current switch material and production method therefor
11/25/2004	US20040235279 Method of fabricating polycrystalline silicon and switching device using polycrystalline silicon
11/25/2004	US20040234867 Ferroelectric material, two-color holographic recording medium, and wavelength selection filter
11/25/2004	US20040234823 Zinc oxide crystal growth substrate
11/25/2004	US20040234808 Mcraly-coating
11/25/2004	US20040232427 P-type group II-VI semiconductor compounds
11/25/2004	US20040232404 Boron phosphide-based semiconductor device and production method thereof
11/25/2004	US20040231583 Manufacturing method for producing silicon carbide crystal using source gases
11/25/2004	DE10319300A1 Verfahren zur Herstellung eines Formkörpers aus Kieselglas A process for producing a shaped article made of silica glass
11/25/2004	DE10297464T5 Kristallmaterialien für die optische Lithographie unter 160 NM und Herstellungsverfahren Crystal materials for optical lithography below 160 nm and manufacturing processes
11/25/2004	DE102004022053A1 Verfahren zur Herstellung eines optischen Fluoridkristalls A method for producing an optical fluoride crystal
11/24/2004	EP1480260A1 Crystal manufacturing method
11/24/2004	EP1479796A2 Piezoelectric single crystal device and fabrication method thereof
11/24/2004	EP1479795A1 Process for producing group iii nitride compound semiconductor
11/24/2004	EP1018172A4 Relaxor ferroelectric single crystals for ultrasound transducers
11/24/2004	CN1549357A Nitride semiconductor wafer and method of processing nitride semiconductor wafer
11/24/2004	CN1548590A Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace
11/23/2004	US6822302 Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device
11/23/2004	US6821930 Preparing method of oxide superconductor, raw material for oxide superconductor, and preparing method of raw material for oxide superconductor
11/23/2004	US6821889 Atomic layer deposition using a boron compound as a reducing agent.
11/23/2004	US6821807 Method of forming nitride-based semiconductor layer, and method of manufacturing nitride-based semiconductor device
11/23/2004	US6821340 Method of manufacturing silicon carbide, silicon carbide, composite material, and semiconductor element
11/23/2004	US6821337 Preparation of nanocrystallites
11/23/2004	CA2314732C Crystal growth vessel and crystal growth method
11/23/2004	CA2217822C Structures having enhanced biaxial texture and method of fabricating same
11/18/2004	WO2004100244A1 Method for texturing surfaces of silicon wafers
11/18/2004	WO2004099472A1 Iii-v compound semiconductor crystal and method for production thereof
11/18/2004	WO2004090201A3 Method for the production of monocrystalline crystals
11/18/2004	WO2004073045A3 Epitaxial growth of a zirconium diboride layer on silicon substrates
11/18/2004	WO2004066361A3 Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
11/18/2004	US20040229447 Process for producing luminescent silicon nanoparticles
11/18/2004	US20040227152 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
11/18/2004	US20040227150 ZnO system semiconductor device
11/17/2004	EP1477590A2 Enhanced melt-textured growth
11/17/2004	EP1476900A2 Oxide layer on a gaas-based semiconductor structure and method of forming the same
11/17/2004	EP1476592A1 Crystal forming apparatus and method for using same
11/17/2004	EP1476249A1 Improved pressure vessel
11/17/2004	EP1294962B1 Preparation of compounds based on phase equilibria of cu-in-se
11/17/2004	CN1547626A A method to increase device-to-device uniformity for polycrystalline thin-film transistors by deliberately mis-aligning the microstructure relative to the channel region
11/17/2004	CN1546749A Method for preparing double tungstate crystal with stoichiometric ratio
11/17/2004	CN1546748A Method for preparing fluorinion doped lead tungstate scintillation crystal
11/17/2004	CN1546747A Preparation of BaB2O4 single crystal thin film by pulsed laser deposition method
11/17/2004	CN1546746A Method for producing magnesia single crystal using boron sludge
11/17/2004	CN1546745A CsI(Tl) crystal growth technology using elemental powder as deoxidizer
11/17/2004	CN1546744A Orientation growth method of polycrystalline silicon
11/17/2004	CN1546742A Method of preparing ZnO crystal whisker adopting atmosphere open type MOCVD and apparatus therefor
11/17/2004	CN1546741A Method of preparing one-dimensional array material adopting atmosphere open type MOCVD and apparatus therefor
11/17/2004	CN1176502C Manufacturing method of single-crystal GaN base and single-crystal GaN base
11/17/2004	CN1176254C Method and equipment for growing monocrystal of cadmium selenide by gas-phase vertical pulling
11/17/2004	CN1176253C Composite scintillation crystal material of cerium doped lutetium aluminate and yttrium aluminate and its preparing process
11/17/2004	CN1176023C Process and appapratus of producing four-needle zinc oxide whisker
11/16/2004	US6818926 Method for manufacturing gallium nitride compound semiconductor
11/16/2004	US6818463 Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
11/11/2004	WO2004097366A2 Method for detecting protein crystal, apparatus for detecting protein crystal and program for detecting protein crystal
11/11/2004	WO2004097082A1 Apparatus for screening proptein crystallization conditions
11/11/2004	WO2004065294A8 Systems and methods for producing single-walled carbon nanotubes (swnts) on a substrate
11/11/2004	US20040224851 Substrate metal having a high melting temperature; at least one oxide intermediate layer, thick film oxide superconductor layer formed on the oxide intermediate layer; cables, magnets or wires; liquid phase epitaxial method
11/11/2004	US20040223212 Fluoride crystal material for optical element to be used for photolithography apparatus and method for producing the same
11/11/2004	US20040222501 Chemical vapor deposition epitaxial growth
11/11/2004	US20040222499 Group lll nitride compound semiconductor device and method for forming an electrode
11/11/2004	US20040221799 Nitride semiconductor wafer and method of processing nitride semiconductor wafer
11/11/2004	US20040221795 Single crystal diamond prepared by CVD
11/11/2004	US20040221793 Method for producing an optical fluoride crystal without annealing
11/11/2004	DE10297462T5 Optischer Lithografiekristall zur Streuungslenkung für die optische Lithografie und 160nm und Verfahren hierzu Optical lithography crystal for scattering steering for optical lithography and 160nm and method therefor
11/10/2004	EP1475826A2 Nitride semiconductor wafer and method of processing nitride semiconductor wafer
11/10/2004	EP1475464A1 Method for producing an optical fluoride crystal
11/10/2004	EP1474824A2 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
11/10/2004	CN1544716A Process for preparing plate-like tungsten carbide single-crystal particles
11/10/2004	CN1544715A Method and apparatus for growing silicon carbide single crystal by physical vapor transportation
11/10/2004	CN1544714A Automatic pressure control device for SiC single-crystal growth
11/10/2004	CN1544713A Silicon carbide crystal growth apparatus
11/10/2004	CN1544712A Integrated melt method for crystal growth
11/10/2004	CN1544711A Method for growing gadolinium orthosilicate monocrystal
11/10/2004	CN1544709A Method for growing gadolinium orthosilicate scintillation crystal
11/09/2004	US6815867 Substrate usable for an acoustic surface wave device, a method for fabricating the same substrate and an acoustic surface wave device having the same substrate
11/09/2004	US6815721 Diamond semiconductor and diamond semiconductor light-emitting device that uses the semiconductor
11/09/2004	US6815352 Silicon focus ring and method for producing the same
11/09/2004	US6815316 Apparatus for fabricating compound semiconductor device
11/09/2004	US6815241 GaN structures having low dislocation density and methods of manufacture
11/09/2004	US6815223 Low thermal budget fabrication of ferroelectric memory using RTP
11/09/2004	US6814802 Method and apparatus for growing multiple crystalline ribbons from a single crucible
11/04/2004	WO2004094335A1 Calcium phosphate cement, use and preparation thereof
11/04/2004	WO2004094020A2 Crystal growth devices and systems, and methods for using same
11/04/2004	WO2004081986A3 Method to planarize and reduce defect density of silicon germanium
11/04/2004	WO2004070784A3 Microporous crystals and methods of making thereof
11/04/2004	WO2004027108A3 Process of controllable synthesis of carbon films with composite structures
11/04/2004	WO2002020424A8 Electrophoretically redensified sio2 moulded body, method for the production and use thereof
11/04/2004	US20040219767 SiGe rectification process
11/04/2004	US20040219735 Epitaxial semiconductor deposition methods and structures
11/04/2004	US20040219362 Components with bearing or wear-resistant surfaces
11/04/2004	US20040218804 Image analysis system and method
11/04/2004	US20040216666 Device for supplying a process chamber with fluid media
11/04/2004	US20040216486 Method for the production of a shaped silica glass body
11/04/2004	DE10297547T5 UV-optische Fluoridkristallelemente zur Laserlithografie mit λ<200nm und Verfahren derselben UV-optical fluoride crystal elements for laser lithography with λ <200 nm and method thereof

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