| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 05/04/2005 | CN1199846C Pure silver nano tube array and its preparation method |
| 05/03/2005 | CA2213115C Process for producing a current limiter having a high-temperature superconductor, and current limiter |
| 04/29/2005 | CA2491242A1 Method of manufacturing n-type semiconductor diamond, and n-type semiconductor diamond |
| 04/28/2005 | WO2005038899A1 Process for producing high resistance silicon wafer, and process for producing epitaxial wafer and soi wafer |
| 04/28/2005 | WO2005038889A1 The method for allngan epitaxial growth on silicon substrate |
| 04/28/2005 | WO2005038099A1 Lithium tantalate substrate and method for producing same |
| 04/28/2005 | WO2005038098A1 Lithium tantalate substrate and method for producing same |
| 04/28/2005 | WO2005038097A1 Lithium tantalate substrate and process for producing the same |
| 04/28/2005 | WO2005037710A1 Method for the synthesis of filament structures on a nanometre scale and electronic components comprising such structures |
| 04/28/2005 | WO2005022120A3 Process for producing nanocrystals and nanocrystals produced thereby |
| 04/28/2005 | WO2005019104A3 Controlled nanotube fabrication and uses |
| 04/28/2005 | WO2004054922A3 Nanostructure, electronic device and method of manufacturing the same |
| 04/28/2005 | US20050090079 Method for gettering transition metal impurities in silicon crystal |
| 04/28/2005 | US20050089680 3C-sic nanowhisker and synthesizing method and 3c-sic nanowhisker |
| 04/28/2005 | US20050089467 Process control during (plasma enhanced) chemical vapor deposition independent of the catalyst particle size by controlling the residence time of reactive gases in the reactor |
| 04/27/2005 | EP1525340A2 Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density |
| 04/27/2005 | EP1230421B1 Method of modifying source chemicals in an ald process |
| 04/27/2005 | EP1222325B1 Method for producing czochralski silicon free of agglomerated self-interstitial defects |
| 04/27/2005 | CN2695450Y Device for preparing zinc oxide whiskers array material |
| 04/27/2005 | CN1610020A Magnetic material with bidirectional shape memory effect and single-crystal producing method thereof |
| 04/27/2005 | CN1609287A Blended ytterbium boric acid Gd yttrium oxygen calcium self-frequency doubling laser crystal |
| 04/27/2005 | CN1609286A Solar energy level silicon single crystal producing process |
| 04/27/2005 | CN1609285A New CuI Crystal and growing method thereof |
| 04/27/2005 | CN1609045A Prepn process of non-aggregate nanometer doped YAG powder |
| 04/27/2005 | CN1608998A Prepn process of metal oxide and sulfide nanometer linear array |
| 04/27/2005 | CN1608724A No-nitric acid extraction process of artificial diamond and boron nitride monocrystal |
| 04/27/2005 | CN1198973C Apparatus and method for making single crystal |
| 04/27/2005 | CN1198760C Method for removing templat agent from synthetic zeolite |
| 04/26/2005 | US6885031 Integrated circuit including single crystal semiconductor layer on non-crystalline layer |
| 04/26/2005 | US6884478 Including solvent and semiconductor particles in solvent in an effective amount to form liquid crystal phase |
| 04/26/2005 | CA2352545C Single-crystal ferrite fine powder |
| 04/21/2005 | WO2005036593A2 Deposition of silicon-containing films from hexachlorodisilane |
| 04/21/2005 | WO2005035840A1 Piezoelectric single crystal, piezoelectric single crystal element and method for preparation thereof |
| 04/21/2005 | WO2005035839A1 Semiconductor single crystal manufacturing apparatus |
| 04/21/2005 | WO2005035838A1 Process for producing single crystal, single crystal and single crystal production apparatus |
| 04/21/2005 | WO2005035837A1 Compound semiconductor single crystal and production process thereof |
| 04/21/2005 | WO2005035174A1 Diamond tool, synthetic single crystal diamond and method for synthesizing single crystal diamond, and diamond jewelry |
| 04/21/2005 | US20050085394 Superconductor; oxides of cobalt, nickel, barium, strontium, sodium, potassium, rubidium |
| 04/21/2005 | US20050084443 Preparation of nanocrystallites |
| 04/21/2005 | US20050082615 Epitaxial ferroelectric thin-film device and method of manufacturing the same |
| 04/21/2005 | US20050082563 Group iii nitride semiconductor device and its method of manufacture |
| 04/21/2005 | US20050082542 Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby |
| 04/21/2005 | US20050082348 Method for bonding glass or metal fluoride optical materials to metal |
| 04/21/2005 | US20050081912 Zinc oxide with acicular structure, process for its production, and photoelectric conversion device |
| 04/21/2005 | US20050081780 Fabrication method for polycrystalline silicon thin film and apparatus using the same |
| 04/21/2005 | US20050081779 Heater for crystal formation, apparatus for forming crystal and method for forming crystal |
| 04/20/2005 | EP1524248A1 A method for bonding glass or metal fluoride optical materials to metal |
| 04/20/2005 | EP1523463A2 Diamondoid-based components in nanoscale construction |
| 04/20/2005 | CN1608148A Apparatus and method for diamond production |
| 04/20/2005 | CN1608147A Heat shield assembly for crystal puller |
| 04/20/2005 | CN1607683A Nitride semiconductors on silicon substrate and method of manufacturing the same |
| 04/20/2005 | CN1607641A Process for producing an epitaxial layer of gallium nitride |
| 04/20/2005 | CN1197645C Growth of diamond clusters |
| 04/19/2005 | US6881686 Low-fluence irradiation for lateral crystallization enabled by a heating source |
| 04/19/2005 | US6881651 Methods and devices using group III nitride compound semiconductor |
| 04/19/2005 | US6881635 Strained silicon NMOS devices with embedded source/drain |
| 04/19/2005 | US6881259 In-situ monitoring and control of germanium profile in silicon-germanium alloy films and temperature monitoring during deposition of silicon films |
| 04/14/2005 | WO2005034219A1 Production method for silicon epitaxial wafer, and silicon epitaxial wafer |
| 04/14/2005 | WO2005033000A1 Method for producing carbon nitrides in the form of tubes |
| 04/14/2005 | WO2005007934A3 Method for producing piezoelectric monocrystals having a polydomain structure for accurate positioning devices |
| 04/14/2005 | WO2004105098A3 P-type group ii-vi semiconductor compounds |
| 04/14/2005 | WO2004031732A3 Nanocrystals in ligand boxes exhibiting enhanced chemical, photochemical, and thermal stability, and methods of making the same |
| 04/14/2005 | US20050079736 Fabrication method for polycrystalline silicon thin film and display device fabricated using the same |
| 04/14/2005 | US20050079735 Substrate for electronic device, method for manufacturing substrate for electronic device, and electronic device |
| 04/14/2005 | US20050079690 Method for producing silicon epitaxial wafer |
| 04/14/2005 | US20050079359 High purity carbonaceous material and ceramic coated high purity carbonaceous material |
| 04/14/2005 | US20050079294 When an excimer laser heats amorphous silicon layer to crystallize silicon, nucleation sites are formed in the amorphous silicon layer on the heat sink layer; laterally expanding crystallization occurs in amorphous silicon layer on the substrate to form polylsilicon having a crystal size of a micrometer |
| 04/14/2005 | US20050077512 Nitride semiconductors on silicon substrate and method of manufacturing the same |
| 04/14/2005 | US20050076828 Process for fabrication of III nitride-based compound semiconductors |
| 04/14/2005 | US20050076826 Silicon seed crystal and method for manufacturing silicon single crystal |
| 04/14/2005 | DE10343522A1 Verfahren zur Steuerung der Behandlung eines Kristalls mit einer Flüssigkeit A method of controlling the treatment of a crystal with a liquid |
| 04/14/2005 | CA2539618A1 Method to reduce stacking fault nucleation sites and reduce vf drift in bipolar devices |
| 04/13/2005 | EP1523034A2 Method of manufacturing silicon carbide film |
| 04/13/2005 | EP1523033A1 Group iii nitride crystal and method for producing same |
| 04/13/2005 | EP1522612A1 Iii-v compound semiconductor crystal and method for production thereof |
| 04/13/2005 | EP1522611A1 Diamond composite substrate and process for producing the same |
| 04/13/2005 | EP1522530A1 Method for preparing diamond from graphite by inner shell electron excitation |
| 04/13/2005 | EP1522523A1 High purity carbonaceous material |
| 04/13/2005 | CN1605660A La#-[1-x]Ca#-[x]MnO#-[3] compound monocrystal nanowire and method for making same |
| 04/13/2005 | CN1196817C Growth of high curie point lead niobate lead indate-lead titanate single crystal using crucible descending method |
| 04/13/2005 | CN1196816C Gallium-lanthanum silicate crystal growth technology of crucible descending process |
| 04/12/2005 | US6878630 Method of manufacturing a wafer |
| 04/12/2005 | US6878202 Method for growing single crystal of compound semiconductor and substrate cut out therefrom |
| 04/07/2005 | WO2005032217A1 Epitaxial organic layered structure and method for making |
| 04/07/2005 | WO2005031825A1 Method for treating heteroepitaxially grown semi-conductor layers on semi-conductor substrates, semi-conductor substrate comprising a treated semi-conductor layer and semi-conductor component made of said type of semi-conductor substrate |
| 04/07/2005 | WO2005031344A1 Method for controlling the treatment of a crystal by means of a liquid |
| 04/07/2005 | WO2005031033A1 Method of making enhanced cvd diamond |
| 04/07/2005 | US20050075482 Array for crystallizing protein, device for crystallizing protein and method of screening protein crystallization using the same |
| 04/07/2005 | US20050074911 Fabricationof nano-object array |
| 04/07/2005 | US20050073027 Nitride semiconductor substrate and method of producing same |
| 04/07/2005 | US20050072353 Method of manufacturing gallium nitride-based single crystal substrate |
| 04/07/2005 | US20050072352 Single crystals of lead magnesium niobate-lead titanate |
| 04/07/2005 | US20050072351 Direct synthesis of oxide nanostructures of low-melting metals |
| 04/07/2005 | DE10344015A1 Kristalline Verbindungen in den Systemen CN, BN und BCN Crystalline compounds in the systems CN, BN and BCN |
| 04/07/2005 | DE10216609B4 Verfahren zur Herstellung der Halbleiterscheibe A process for producing the semiconductor wafer |
| 04/07/2005 | DE10194370T5 Verfahren zum Züchten eines Kristalls A method for growing a crystal of |
| 04/06/2005 | EP1521310A2 Nitride semiconductor substrate and method of producing same |
| 04/06/2005 | EP1521295A2 Method for forming an epitaxial layer sequence in a component and optoelectronic semiconductor chip |
| 04/06/2005 | CN1604344A Nitride semiconductor substrate and method of producing same |
| 04/06/2005 | CN1196172C Method for producing semiconductor structure with metal oxide interface between silicons |