Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/2003
10/01/2003CN1445388A Method for preparing compound laser crystal of yttrium aluminate with neodymium adulterated and yttrium aluminate
10/01/2003CN1123065C Process for preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers
10/01/2003CN1122732C Non-linear optical crystal of magnesium zinc bromophosphate and its preparing process and application
10/01/2003CN1122731C Method for preparing monocrystal filament of zinc oxide directly from zinc sulfide
10/01/2003CN1122730C Growth process of magnesium silicate crystal with doped quadrivalent chromium
09/2003
09/30/2003US6627582 Non-superconductive phases finely dispersed in rare earth, barium and copper oxide phases of different peritectic temperatures are laminated three-dimensionally, seed crystals
09/30/2003US6627552 Method for preparing epitaxial-substrate and method for manufacturing semiconductor device employing the same
09/30/2003US6626994 Silicon wafer for epitaxial wafer, epitaxial wafer, and method of manufacture thereof
09/30/2003US6626993 Method for stabilizing dendritic web crystal growth
09/25/2003WO2003079415A2 Methods for fabricating strained layers on semiconductor substrates
09/25/2003WO2003078704A1 Apparatus for growing monocrystalline group ii-vi and iii-v compounds
09/25/2003WO2003078703A1 CdTe SINGLE CRYSTAL AND CdTe POLYCRYSTAL, AND METHOD FOR PREPARATION THEREOF
09/25/2003US20030180984 Diamond substrate having piezoelectric thin film, and method for manufacturing it
09/25/2003US20030178914 Domain controlled piezoelectric single crystal and fabrication method therefor
09/25/2003US20030178634 Method for manufacturing gallium nitride compound semiconductor
09/25/2003US20030178109 Nano-crystal texture (arranged in an identical crystal orientation) which improves ductility of a material and is useful for achievement of a super-metal
09/25/2003US20030177977 Gas-admission element for CVD processes, and device
09/25/2003CA2478894A1 Apparatus for growing monocrystalline group ii-vi and iii-v compounds
09/24/2003EP1347508A1 Method of heat treatment of silicon wafer doped with boron
09/24/2003EP1347502A2 Lead-based perovskite buffer layer for forming epitaxial indium phosphide on silicon
09/24/2003EP1347083A1 Silicon single crystal wafer and method for producing silicon single crystal
09/24/2003EP1347082A1 Method and apparatus for growing single crystal
09/24/2003EP1346087A2 Energy pathway arrangement
09/24/2003EP1346085A1 Methods and apparatus for producing m'n based materials
09/24/2003CN1443879A Fused salt pulling method for growing BBO crystal
09/24/2003CN1443878A Fused salt pulling method for growing LBO crystal
09/23/2003US6624009 Forming a crystalline semiconductor film on a glass substrate
09/23/2003US6623877 Usable for substrate of semiconductor device such as light-emitting diode or high speed IC chip
09/23/2003US6623560 Crystal growth method
09/18/2003US20030172870 Apparatus for growing monocrystalline group II-VI and III-V compounds
09/18/2003US20030172869 Method for preparing low-resistant p-type srtio3
09/18/2003US20030172868 Method for preparing single crystalline zns powder for phosphor
09/18/2003US20030172865 Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300mm and its production method
09/18/2003US20030172864 Seed crystal for production of silicon single crystal and method for production of silicon single crystal
09/17/2003EP1344841A1 Base material for forming diamond film
09/17/2003EP1343927A2 Gallium nitride materials and methods for forming layers thereof
09/17/2003EP1343925A1 Process for monitoring the gaseous environment of a crystal puller for semiconductor growth
09/17/2003EP1252375B1 Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
09/17/2003CN1442517A Growing method of Yb:YAG laser crystal
09/17/2003CN1442364A Preparation method of spherical agglomeration less yttrium aluminium garnet nano micropowder
09/16/2003US6621048 Method for heating a workpiece
09/16/2003US6620752 Method for fabrication of lead-based perovskite materials
09/16/2003US6620710 Forming a single crystal semiconductor film on a non-crystalline surface
09/16/2003US6620247 Thin polycrystalline silicon film forming apparatus
09/11/2003US20030170503 III nitride epitaxial substrate, epitaxial substrate for III nitride element and III nitride element
09/11/2003US20030170458 Base material for forming diamond film and diamond film
09/11/2003US20030168000 Lead-based perovskite buffer for forming indium phosphide on silicon
09/10/2003EP1343200A1 Anneal wafer manufacturing method and anneal wafer
09/10/2003EP1342820A1 Production method for composite oxide thin film and device therefor and composite oxide film produced thereby
09/10/2003EP1342275A1 Epitaxial oxide films via nitride conversion
09/10/2003EP1342261A1 Method for producing a positively doped semiconductor with large forbidden band
09/10/2003EP1027483A4 Method of polishing cvd diamond films by oxygen plasma
09/10/2003CN1441860A Single crystal diamond prepared by CVD
09/10/2003CN1441859A Method for making thick signal crystal diamond layer and gemstones produced from layer
09/09/2003US6617668 Methods and devices using group III nitride compound semiconductor
09/09/2003US6617261 Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
09/09/2003US6617235 Method of manufacturing Group III-V compound semiconductor
09/09/2003US6617060 Gallium nitride materials and methods
09/09/2003US6617010 Semiconductor thin film and thin film device
09/09/2003US6616756 Protection for a carbon material, in particular C/C composite, bowl that is to receive a crucible, such as a silica crucible for drawing silicon
09/04/2003WO2003073538A1 Active material based on bundles of one-dimensional transition metal dichalcogenide nanotubes for use in lithium batteries and accumulators
09/04/2003WO2003073484A1 Crystal manufacturing method
09/04/2003WO2003073441A1 Process of producing multicrystalline silicon substrate and solar cell
09/04/2003WO2003072856A1 Process for producing group iii nitride compound semiconductor
09/04/2003US20030164657 Surface acoustic wave device and piezoelectric substrate used therefor
09/03/2003EP1339637A1 A process for the synthesis of nanotubes of transition metal dichalcogenides
09/03/2003EP1218095B1 Growth of diamond clusters
09/03/2003EP0756719B1 Non-linear crystals and uses thereof
09/03/2003CN1440565A Single crystal wafer and solar battery cell
09/03/2003CN1439750A Lithium niobate crystal waveguide preparation by ion implantation and anneal
09/03/2003CN1439746A High doped single crystal production
08/2003
08/28/2003WO2003071595A1 LnCuO(S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD, AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE MONOCRYSTALLINE THIN FILM
08/28/2003WO2003071588A1 Production method of sic monitor wafer
08/28/2003WO2002103090A3 A method of growing a semiconductor layer
08/28/2003US20030160304 Thin film semiconductor; incline substrate; solar cells
08/28/2003US20030160177 UV optical fluoride crystal elements for lambda < 200nm laser lithography and methods therefor
08/28/2003US20030159648 Method for the production of a silica glass crucible with crystalline regions from a porous silica glass green body
08/28/2003US20030159646 Quartz glass crucible for pulling up silicon single crystal and method for producing the same
08/27/2003EP1338683A2 Process for making an epitaxial layer of gallium nitride
08/27/2003EP1337698A2 Single crystals of lead magnesium niobate-lead titanate
08/27/2003EP1337697A1 Method and apparatus for preparing molten silicon melt from polycrystalline silicon charge
08/27/2003EP1337696A1 Method and device for producing optical fluoride crystals
08/27/2003EP1337695A1 Synthesis of colloidal nanocrystals
08/27/2003EP1337482A2 Apparatus for silica crucible manufacture
08/27/2003EP1337461A1 Crystals comprising single-walled carbon nanotubes
08/27/2003CN1439194A Piezoelectric substrate for surface acoustic wave device and surface acoustic wave device
08/27/2003CN1438168A Laser-inducing preparation of size-controllable high-density nano silicon quanta array of points
08/27/2003CN1119439C Simple synthesis process for raw lithium strontium aluminium fluoride (LiSAF) material
08/27/2003CN1119438C Growth method for column type alpha-nickel sulfate hexahydrate crystal
08/26/2003US6610920 Photoelectric conversion device
08/26/2003US6610428 Controlled conversion of metal oxyfluorides into superconducting oxides
08/26/2003US6610421 Spin electronic material and fabrication method thereof
08/21/2003WO2003068699A1 Group iii nitride semiconductor crystal, production method thereof and group iii nitride semiconductor epitaxial wafer
08/21/2003WO2003068696A1 Production method for compound semiconductor single crystal
08/21/2003WO2003035915A8 Method for producing monocrystalline metallic wire
08/21/2003US20030157738 Method for manufacturing gallium nitride compound semiconductor
08/21/2003US20030157376 III-V nitride substrate boule and method of making and using the same
08/21/2003US20030157332 Continuous, monoatomic thick materials
08/21/2003US20030155586 Methods and devices using group III nitride compound semiconductor
08/21/2003US20030155575 III nitride compound semiconductor element an electrode forming method
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