Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
01/2004
01/22/2004DE10323885A1 Verfahren zur Kristallherstellung und Gerät zur Kristallherstellung Method and apparatus for the production of crystal crystal manufacturing
01/21/2004EP1382723A2 Method of organic film deposition
01/21/2004EP1382722A2 Optical Lithography Fluoride Crystal Annealing Furnace
01/21/2004EP1381718A2 Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques
01/21/2004CN1469942A Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientation
01/21/2004CN1469433A Method for producing Si Ge film on silicon substrate
01/21/2004CN1468804A High temperature molten salt reaction process of preparing one-dimensional ordered nano wire and nanotube array
01/20/2004US6680260 Method of producing a bonded wafer and the bonded wafer
01/15/2004WO2004006312A1 Group iii nitride semiconductor substrate and its manufacturing method
01/15/2004WO2003079415A3 Methods for fabricating strained layers on semiconductor substrates
01/15/2004WO2003062507A3 Method for manufacturing a free-standing substrate made of monocrystalline semi-conductor material
01/15/2004US20040009626 Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates
01/15/2004US20040007185 Method of manufacturing a semiconductor device and a semiconductor manufacture system
01/15/2004DE10324674A1 Einkristall-Ziehvorrichtung und -verfahren und Supraleitender Magnet Single crystal pulling apparatus and method, and superconducting magnet
01/15/2004CA2741397A1 Nanostructures and methods for manufacturing the same
01/14/2004EP1380676A1 Method for flattening surface of oxide crystal to ultra high degree
01/14/2004EP1380675A1 Method for reducing oxygen component and carbon component in fluoride
01/14/2004CN1468328A Heat shield assembly for crystal pulling apparatus
01/14/2004CN1134560C Single crystal pulling apparatus
01/14/2004CN1134559C Single crystal growth method
01/14/2004CN1134289C Crystal growth
01/13/2004US6677063 Hydrophilic and/or rutile and anatase titanium oxide are obtained by sputter depositing titanium metal oxide on a film of zirconium oxide in the cubic phase.
01/13/2004US6676753 Czochralski pullers for manufacturing monocrystalline silicon ingots, including heat shield having sloped portions
01/13/2004US6676751 Epitaxial film produced by sequential hydride vapor phase epitaxy
01/13/2004US6676750 Growth of diamond clusters
01/13/2004US6676749 Method for preparing layered perovskite compound thin film with organic ammonium layers and inorganic layers
01/08/2004WO2004003535A1 Planar nanowire based sensor elements, devices, systems and methods for using and making same
01/08/2004WO2004003266A1 POROUS SUBSTRATE AND ITS MANUFACTURING METHOD, AND GaN SEMICONDUCTOR MULTILAYER SUBSTRATE AND ITS MANUFACTURING METHOD
01/08/2004WO2004003264A1 Thin sheet manufacturing method, and thin sheet manufacturing apparatus
01/08/2004WO2004003263A1 Thin sheet manufacturing method, thin sheet manufacturing apparatus, and base sheet
01/08/2004WO2004003261A1 Process for obtaining of bulk monocrystallline gallium-containing nitride
01/08/2004US20040005779 Spin electronic material and fabrication method thereof
01/08/2004US20040005731 Device and method for the depostion of, in particular, crystalline layers on, in particular, crystalline substrates
01/08/2004US20040005269 Chemical vapor deposition, in a thermal environment, using a carbon source and a catalyst mixture of Fe, Co or Ni and a supporting element, especially a lanthanide, which lowers catalyst melting point by forming alloys
01/08/2004US20040005266 Optical member, process for producing the same, and projection aligner
01/08/2004US20040004301 Injecting irregular silicon metal particles into a high-temperature plasma reactor to melt; solidification to form spheres with thin silicon monooxide coating removable with hydroxide
01/08/2004US20040003770 Process for cooling a silicon ingot having a vacancy dominated region to produce defect free silicon
01/08/2004US20040003769 Method of producing silicon wafer and silicon wafer
01/08/2004US20040003757 Tetracalcium phosphate (TTCP) having calcium phosphate whisker on surface
01/08/2004US20040003495 GaN boule grown from liquid melt using GaN seed wafers
01/07/2004EP1377697A1 Suppression of n-type autodoping in low-temperature si and sige epitaxy
01/07/2004EP1377439A2 Chemical monolayer and micro-electronic junctions and devices containing same
01/07/2004EP1377438A2 Preparation of nanocrystallites
01/07/2004CN1465756A Non-linear optical crystal and use thereof
01/06/2004US6673478 Crystal-growth substrate and a ZnO-containing compound semiconductor device
01/06/2004US6673150 Multicompartment container for growing calcium fluoride monocrystals
01/06/2004US6673149 Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate
01/06/2004US6673148 Method of using a magnetic field furnace to manufacture semiconductor substrates
01/02/2004EP1375705A1 Silicon semiconductor single crystal manufacturing apparatus and manufacturing method
01/02/2004EP1375704A1 Diamond substrate having piezoelectric thin film, and method for manufacturing it
01/02/2004EP1375702A2 Doped silica glass crucible for making a silicon ingot
01/02/2004EP1375697A1 Laminated film and method of forming film
01/02/2004EP1375692A1 Intermetallic compound superconducting material comprising magnesium and beryllium and alloy superconducting material containing the intermetallic compound and method for preparing them
01/02/2004EP1375691A1 Aluminum alloy sheet excellent in formability and hardenability during baking of coating and method for production thereof
01/02/2004EP1373603A1 Heat shield assembly for crystal puller
01/02/2004EP1373602A1 Process for preparing fluoride monocrystals
01/02/2004EP1372805A2 Efg crystal growth apparatus and method
01/01/2004US20040000840 Method for making potassium niobate thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit and electronic apparatus
12/2003
12/31/2003CN1464920A Method for preparing tungstate single crystal
12/30/2003US6669920 Fluoride crystal with a 157 nm transmission > 85% and a refractive index wavelength dispersion dn/d lambda < -0.003
12/30/2003US6669918 Method for bulk separation of single-walled tubular fullerenes based on chirality
12/30/2003US6669778 Preparation of crystals
12/30/2003US6669776 Magnetic field furnace and a method of using the same to manufacture semiconductor substrates
12/25/2003WO2003106743A1 N-type semiconductor diamond producing method and semiconductor diamond
12/25/2003US20030235970 Method for growing layers of group iii - nitride semiconductor having electrically passivated threading defects
12/25/2003US20030235934 Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths
12/25/2003US20030235720 Depositing coating material comprising zirconium oxide over substrate; depositing coating material comprising titanium oxide; wherein one of coating materials is deposited by pyrolytic deposition
12/25/2003US20030235519 Protein crystallography hanging drop lid that individually covers each of the wells in a microplate
12/25/2003US20030234402 Transparent layer of a LED device and the method for growing the same
12/25/2003US20030233978 Apparatus for crystal growth of biomacromolecules
12/25/2003US20030233974 Method for growing laser crystals
12/24/2003WO2003106744A1 METHOD FOR PRODUCING ZnTe-BASED COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND ZnTe-BASED COMPOUND SEMICONDUCTOR SINGLE CRYSTAL
12/24/2003WO2003106742A1 Seed crystal holding jig and process for producing single crystal
12/24/2003WO2003106741A2 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
12/24/2003CN1463309A Method of forming gallium-contg. nitride bulk single crystal on heterogeneneous substrate
12/24/2003CN1463305A Silicon single crystal wafer having void denuded zone on surface and diameter of above 300mm and its production method
12/24/2003CN1462720A Method for preparing nano tube of some metalloid oxides and metals with size and shape being controllable
12/24/2003CA2493318A1 N-type semiconductor diamond producing method and semiconductor diamond
12/24/2003CA2489234A1 Method for manipulating a rare earth chloride or bromide or iodide in a crucible comprising carbon
12/23/2003US6667522 Silicon wafers for CMOS and other integrated circuits
12/23/2003US6667184 Single crystal GaN substrate, method of growing same and method of producing same
12/23/2003US6667102 Microelectronics
12/23/2003US6666916 Apparatus and method for making free standing diamond
12/18/2003WO2003105197A1 Radiation detector
12/18/2003WO2003104533A1 SINGLE CRYSTAL OF MIXED CRYSTAL OXIDE CONTAINING Yb, LUMINESCENT MATERIAL CONTAINING THE SAME, gamma-RAY DETECTOR AND POSITORON EMISSION TOMOGRAPHY UNIT
12/18/2003WO2002071555A9 High repetition rate excimer laser system
12/18/2003US20030232457 Method for fabricating a nitride semiconductor device
12/18/2003US20030230235 Dislocation reduction in non-polar gallium nitride thin films
12/18/2003US20030230231 Liquid-phase growth process and liquid-phase growth apparatus
12/17/2003EP1371119A1 High repetition rate uv excimer laser
12/17/2003EP1371117A2 High repetition rate excimer laser system
12/17/2003EP1370709A1 A chemical vapor deposition process and apparatus thereof
12/17/2003EP1370498A1 Quartz glass component and method for the production thereof
12/17/2003EP1133590B1 Epitaxial silicon wafers substantially free of grown-in defects
12/17/2003CN1462258A Method for preparing single crystalline ZnS powder for phosphor
12/17/2003CN1462060A GaN single crystal base, nitride type semiconductor optical growth base, nitride type semiconductor device and its producing method
12/17/2003CN1461826A Laser crystal NdA3 (BO3)4 used for generating blue-violet coloured laser
12/17/2003CN1461825A Nickel iron sulphate dodecahydrate crystal used for ultraviolet and blue-green light-flux belt filter
12/17/2003CN1131343C Method for mfg. plate crystal of silicon carbide
12/16/2003US6663989 Anisotropic; epitaxial; computers; data storage