Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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12/23/2004 | WO2003097532A8 Process for manufacturing a gallium rich gallium nitride film |
12/23/2004 | US20040260782 Data communication in a laboratory environment |
12/23/2004 | US20040259337 Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element |
12/23/2004 | US20040259333 Method to planarize and reduce defect density of silicon germanium |
12/23/2004 | US20040259275 Method of forming ferroelectric film |
12/23/2004 | US20040257422 Methods for applying crystalline materials |
12/23/2004 | US20040256963 Automated sample analysis system and method |
12/23/2004 | US20040255844 Crystal production method for gallium oxide-iron mixed crystal |
12/23/2004 | US20040255842 Lithium tantalate substrate and method of manufacturing same |
12/23/2004 | US20040255841 Method for producing photonic crystal, and photonic crystal |
12/23/2004 | US20040255840 Method for forming gallium-containing nitride bulk single crystal on heterogenous substrate |
12/23/2004 | CA2509257A1 Sacrificial template method of fabricating a nanotube |
12/22/2004 | EP1489654A1 LnCuO(S, Se, Te) MONOCRYSTALLINE THIN FILM, ITS MANUFACTURING METHOD, AND OPTICAL DEVICE OR ELECTRONIC DEVICE USING THE MONOCRYSTALLINE THIN FILM |
12/22/2004 | EP1489653A2 Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element |
12/22/2004 | EP1489205A1 LUMINOUS MATERIAL FOR SCINTILLATOR COMPRISING SINGLE CRYSTAL OF Yb MIXED CRYSTAL OXIDE |
12/22/2004 | EP1488859A1 Method and apparatus for applying crystalline materials |
12/22/2004 | EP1488010A2 Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus |
12/22/2004 | EP0389533B2 Sublimation growth of silicon carbide single crystals |
12/22/2004 | CN1556262A Method of growing telluronium manganese mercury crystal |
12/22/2004 | CN1556261A Thulium adulterated yttrium aluminate laser crystal with oulput 2 micron wave band and its preparation technology |
12/22/2004 | CN1556260A Preparation method of aluminium borate whisker |
12/22/2004 | CN1556259A Preparation method of magnesium borate whisker |
12/22/2004 | CN1556258A Self assembling preparation metod of zinc oxide tridimensional photon crystal |
12/22/2004 | CN1556257A Upper thermal field used for six inch and eight inch adulterated phosphorus vertical pulling silicon mono crystal manufacture |
12/22/2004 | CN1556256A Upper thermal field used for eight inch adulterated arsenic vertical gulling monocrystal manufacture |
12/22/2004 | CN1556255A Adulterating method used for adulterating vertical pulling silicon mono crystal and its adulterating funnel |
12/22/2004 | CN1181220C Method for producing coated workpieces, uses and installation for the method |
12/21/2004 | US6833192 Coating bio-crystal template polymers with alternating layers of charged polyelectrolytes and/or nanparticles |
12/16/2004 | WO2004109344A1 Three-dimensional periodic structure and process for producing the same |
12/16/2004 | WO2004108593A1 Nano-fiber or nano-tube comprising v group transition metal dichalcogenide crystals, and method for preparation thereof |
12/16/2004 | WO2004042785A3 Functional bimorph composite nanotapes and methods of fabrication |
12/16/2004 | US20040253819 Method for crystallizing silicon |
12/16/2004 | US20040253796 Method for manufacturing gallium nitride (GaN) based single crystalline substrate |
12/16/2004 | US20040253742 Automated imaging system and method |
12/16/2004 | US20040251471 Light emitting element structure using nitride bulk single crystal layer |
12/16/2004 | US20040251333 Method and apparatus for improving silicon processing efficiency |
12/16/2004 | US20040250753 Method for forming carbon nanotubes with post-treatment step |
12/16/2004 | DE10324440A1 Verfahren zur Herstellung eines innenseitig verglasten SiO2-Tiegels A method for producing a glazed inner side SiO2 crucible |
12/15/2004 | EP1487008A2 Method for forming a Si film, si film and solar battery |
12/15/2004 | EP1486590A1 Multi-layer structure, and actuator element, capacitive element and filter element using the same |
12/15/2004 | EP1485956A1 Process of producing multicrystalline silicon substrate and solar cell |
12/15/2004 | EP1485955A1 Semiconductor-nanocrystal/conjugated polymer thin films |
12/15/2004 | EP1485524A1 Apparatus for growing monocrystalline group ii-vi and iii-v compounds |
12/15/2004 | EP1218572B1 Method and apparatus for growing silicon carbide crystals |
12/15/2004 | EP0988407B9 Method for producing coated workpieces, which are coated with an epitactic layer |
12/15/2004 | CN1555500A Photolithographic method and uv transmitting fluoride crystals with minimized spatial dispersion |
12/15/2004 | CN1555499A Photolithographic uv transmitting mixed fluoride crystal |
12/15/2004 | CN1554808A Device and method for growng large diameter 6H-SiC monocrystal with semiconductor property |
12/15/2004 | CN1180135C Method for preparing gallium nitride crystal |
12/14/2004 | US6831017 Catalyst patterning for nanowire devices |
12/14/2004 | US6830618 Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same |
12/09/2004 | WO2004106598A1 Apparatus and method for forming biopolymer crystals |
12/09/2004 | WO2004106596A1 Single crystal of silicon carbide, and method and apparatus for producing the same |
12/09/2004 | WO2004106595A1 Process for producing extremely flat microcrystalline diamond thin film by laser ablation method |
12/09/2004 | WO2004106231A1 Method for producing nanotube material and nanotube material |
12/09/2004 | WO2004105931A1 Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride |
12/09/2004 | WO2004084275A3 Method for making group iii nitride devices and devices produced thereby |
12/09/2004 | US20040248743 Method of producing biaxially textured buffer layers and related articles, devices and systems |
12/09/2004 | US20040248427 Article comprising an oxide layer on a GaAs-based semiconductor structure and method of forming same |
12/09/2004 | US20040248381 Nanoelectronic interconnection and addressing |
12/09/2004 | US20040244677 Nanofiber and method of manufacturing nanofiber |
12/09/2004 | US20040244676 Method of growing a mcraly-coating and an article coated with the mcraly-coating |
12/09/2004 | US20040244673 Microporous crystals and methods of making thereof |
12/09/2004 | CA2529868A1 Single-crystal-like materials |
12/09/2004 | CA2527124A1 Process for producing extremely flat microcrystalline diamond thin film by laser ablation method |
12/08/2004 | EP1483782A1 Production method of sic monitor wafer |
12/08/2004 | EP1483428A1 Diamond electrode |
12/08/2004 | EP1483222A2 Components with bearing or wear-resistant surfaces |
12/08/2004 | EP1257612B1 Scintillator crystals, method for making same, use thereof |
12/08/2004 | CN1553233A Diamond-structure photo crystal with hollow-medium ball and preparing method thereof |
12/08/2004 | CN1552959A Preparing process for calcium carbonate crystal whisker |
12/08/2004 | CN1552958A Preparing process for antifungin crystal whisker |
12/08/2004 | CN1552957A Preparation of divalent cerium ion dosed rare earth silicate scintillating crystal |
12/08/2004 | CN1552956A Growth process for cerium dosed yttrium aluminum garnet crystal |
12/08/2004 | CN1552955A Method and apparatus for artificial synthetic rutile single crystal by TiO2 micropowder flame melt method |
12/07/2004 | US6829270 Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device |
12/02/2004 | WO2004105098A2 P-type group ii-vi semiconductor compounds |
12/02/2004 | WO2004104276A1 Method for producing single crystal of multi- element oxide single crystal containing bismuth as constituting element |
12/02/2004 | WO2004104274A2 Zinc oxide crystal growth substrate |
12/02/2004 | WO2004104228A1 Microfluidic protein crystallography |
12/02/2004 | WO2004019391A3 Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
12/02/2004 | US20040242865 Purity; crystallization from solvent |
12/02/2004 | US20040241975 Method of fabricating heteroepitaxial microstructures |
12/02/2004 | US20040241966 Semiconductor crystal producing method |
12/02/2004 | US20040241501 Ferroelectric film, method of manufacturing the same, ferroelectric memory and piezoelectric device |
12/02/2004 | US20040238866 Ferroelectric thin film manufacturing method, ferroelectric element manufacturing method, surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic apparatus |
12/02/2004 | US20040238810 Nitride semiconductor laser device and manufacturing method therefor |
12/02/2004 | US20040238747 Scintillator crystal, method for making same use thereof |
12/02/2004 | US20040237882 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus |
12/02/2004 | US20040237879 Single crystal silicon carbide and method for producing the same |
12/02/2004 | US20040237588 Method for the production of an internally vitrified SiO2 crucible |
12/02/2004 | DE10321305A1 Production of highly conducting tear-free gallium nitride-based buffer layers used in production of illuminating diodes comprises using a group III nitride buffer layer with a silicon nitride layer, and doping with a donator |
12/02/2004 | DE10320212A1 Verfahren zum Texturieren von Oberflächen von Silizium-Scheiben Method for texturing surfaces of silicon wafers |
12/01/2004 | EP1482549A1 Microstructure and its method of fabrication |
12/01/2004 | CN1551824A Free-standing (Al, Ga, In)N and parting method for forming same |
12/01/2004 | CN1178303C Semiconductor laminated substrate, and manufacturing method thereof and semiconductor device |
12/01/2004 | CN1177956C Silicon ribbon growth dendrite thickness control system |
11/30/2004 | US6824898 Dielectric thin film, method for making the same and electric components thereof |
11/30/2004 | US6824897 Method for producing bonded articles, bonded articles and bonding agents |
11/30/2004 | US6824611 Method and apparatus for growing silicon carbide crystals |