Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
03/2005
03/03/2005WO2005019491A2 Thermal cvd synthesis of nanostructures
03/03/2005WO2005019106A1 Silicon manufacturing apparatus
03/03/2005WO2005019104A2 Controlled nanotube fabrication and uses
03/03/2005WO2004068556A3 Semiconductor structures with structural homogeneity
03/03/2005US20050048778 Use of thin SOI to inhibit relaxation of SiGe layers
03/03/2005US20050048685 III-V nitride semiconductor substrate and its production method
03/03/2005US20050047984 High-purity lithium carboxylate crystal, production method thereof and use thereof
03/03/2005US20050045976 Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device
03/03/2005US20050045094 Crystallization cassette for the growth and analysis of macromolecular crystals and an associated method
03/03/2005US20050045093 Apparatus for supplying raw material
03/03/2005US20050045091 Molecular beam epitaxy growth apparatus and method of controlling same
03/03/2005DE102004024924A1 Verfahren zum Herstellen polykristallinen Siliciums sowie Schaltbauteil unter Verwendung polykristallinen Siliciums A method for producing polycrystalline silicon as well as switching device using polycrystalline silicon
03/02/2005EP1510602A1 Drop tube type granular crystal producing device
03/02/2005EP1509949A2 Formation of lattice-tuning semiconductor substrates
03/02/2005CN1588624A Method for improving hydride gas phase epitaxial growth gallium nitride crystal film surface quanlity
03/02/2005CN1587450A Method for preparing mullite single crystal nano belt
03/02/2005CN1587449A Process for preparing alpha-Si3N4 whisker
03/02/2005CN1587448A Fluorine blended tungstate laser crystal and its grownig method
03/02/2005CN1587447A Process for preparing high temperature cerium blended lutetium pyrosilicate scintillation monocrystal
03/02/2005CN1587446A Growing method of rare-earth thiooxide crystal
03/02/2005CN1191608C Silicon semiconductor base-plate and its making method
03/01/2005US6861426 Antiepileptic agents
03/01/2005US6861360 Double-sided polishing process for producing a multiplicity of silicon semiconductor wafers
03/01/2005US6861270 Method for manufacturing gallium nitride compound semiconductor and light emitting element
03/01/2005US6861268 Method for inspecting silicon wafer, method for manufacturing silicon wafer, method for fabricating semiconductor device, and silicon wafer
03/01/2005US6860982 Holding the substrate in an electrolytic solution in which zinc ions and a cosolute are present, electrodeposition
03/01/2005US6860943 Method for producing group III nitride compound semiconductor
03/01/2005US6860937 Method for preparing zinc oxide semi-conductor material
02/2005
02/24/2005WO2005017986A1 Silicon carbide epitaxial wafer, method for producing such wafer, and semiconductor device formed on such wafer
02/24/2005WO2005017236A1 Device and method for treating a crystal by applying microdrops thereto
02/24/2005WO2005016837A1 Method for producing a piece made of sintered amorphous silica, and mold and slurry used in this method
02/24/2005WO2005016821A1 Ga-DOPED CRYSTALLINE SILICON, PROCESS FOR PRODUCING THE SAME, Ga-DOPED CRYSTALLINE SILICON PRODUCTION APPARATUS FOR USE IN THE PROCESS, SOLAR CELL INCLUDING SUBSTRATE OF GA-DOPED CRYSTALLINE SILICON AND PROCESS FOR PRODUCING THE SAME
02/24/2005WO2004097366A3 Method for detecting protein crystal, apparatus for detecting protein crystal and program for detecting protein crystal
02/24/2005US20050042883 Method of forming low-k films
02/24/2005US20050042800 Production method of sic monitor wafer
02/24/2005US20050042789 Method for producing nitride semiconductor, semiconductor wafer and semiconductor device
02/24/2005US20050042465 Thermal CVD synthesis of nanostructures
02/24/2005US20050040385 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
02/24/2005US20050039673 Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer
02/24/2005US20050039672 Methods for surface-biaxially-texturing amorphous films
02/24/2005US20050039671 Silicon single crystal wafer fabricating method and silicon single crystal wafer
02/23/2005EP1508632A1 CdTe SINGLE CRYSTAL AND CdTe POLYCRYSTAL, AND METHOD FOR PREPARATION THEREOF
02/23/2005CN1585838A Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
02/23/2005CN1584131A System and method for growth of lithium niobate crystal with rough chemical ratio by melt injection process
02/23/2005CN1584130A Method for producing land plaster whiskers from phosphoric acid
02/23/2005CN1584114A Preparation of nano crystal film of rare earth doped strontium cerate
02/23/2005CN1190530C Process for preparing chemical-specific Mg-doped lithium niobate crystal with periodic polarizing microstructure
02/22/2005US6858546 Method of depositing rare earth oxide thin films
02/22/2005US6858078 Apparatus and method for diamond production
02/22/2005US6858077 Single crystalline silicon wafer, ingot, and producing method thereof
02/22/2005US6858076 Method and apparatus for manufacturing single-crystal ingot
02/17/2005WO2005015626A1 Method for producing single crystal ingot from which semiconductor wafer is sliced
02/17/2005WO2005015618A1 Substrate for nitride semiconductor growth
02/17/2005WO2005015617A1 Semiconductor layer
02/17/2005WO2005014899A1 Protein crystallization apparatus, method of protein crystallization, protein crystallizing agent and process for preparing the same
02/17/2005WO2005014898A1 Process for producing wafer
02/17/2005WO2005014886A1 Method of coating for diamond electrode
02/17/2005WO2004051707A3 Gallium nitride-based devices and manufacturing process
02/17/2005US20050037526 Nitride semiconductor substrate production method thereof and semiconductor optical device using the same
02/17/2005US20050035380 Monoatomic and moncrystalline layer of large size, in diamond type carbon, and method for the manufacture of this layer
02/17/2005US20050035349 Epitaxial wafer and method for manufacturing method
02/17/2005US20050034756 Method for forming a Si film, Si film and solar battery
02/17/2005US20050034654 Method and apparatus for doping semiconductors
02/17/2005US20050034653 Polycrystalline tft uniformity through microstructure mis-alignment
02/17/2005US20050034650 Ultrahard diamonds and method of making thereof
02/17/2005DE10334522A1 Process for the liquid phase epitaxial production of a semiconductor arrangement for producing IR emitters comprises epitaxially forming a semiconductor layer of a III-V compound semiconductor from a melt containing an arsenide dopant
02/17/2005DE10334202A1 CVD-Verfahren zum Abscheiden mindestens einer III-VN-Schicht auf einem Substrat CVD process for depositing at least one III-VN-layer on a substrate
02/17/2005DE102004017142A1 Lithiumtantalat-Substrat und Verfahren zur seiner Herstellung Lithium tantalate substrate and process for its preparation
02/17/2005CA2521513A1 Method for producing single crystal ingot from which semiconductor wafer is sliced
02/16/2005EP1049562B1 Turbine blades made from multiple single crystal cast superalloy segments
02/16/2005CN1580335A Lauric water nickel-cobalt sulfate crystal for ultraviolet light passband filter
02/15/2005US6855996 Electronic device substrate structure and electronic device
02/15/2005US6855620 Method for fabricating Group III nitride compound semiconductor substrates and semiconductor devices
02/15/2005US6855619 Method and device for making substrates
02/15/2005US6855417 Chemical monolayer memory device
02/15/2005US6855204 High yield method for preparing silicon nanocrystals with chemically accessible surfaces
02/15/2005US6855203 Preparation of 157nm transmitting barium fluoride crystals with permeable graphite
02/15/2005US6855202 Shaped nanocrystal particles and methods for making the same
02/15/2005US6854832 Laminate having mono-crystal oxide conductive member on silicon substrate, actuator using such laminate, ink jet head and method for manufacturing such head
02/10/2005WO2005013378A1 An improved thin-film photovoltaic module
02/10/2005WO2005013377A1 Semiconductor elements having zones of reduced oxygen
02/10/2005WO2005013343A1 Vapor deposition apparatus and vapor deposition method
02/10/2005WO2005013337A2 Rapid generation of nanoparticles from bulk solids at room temperature
02/10/2005WO2005013326A2 Epitaxial growth of relaxed silicon germanium layers
02/10/2005US20050032345 Group III-nitride growth on Si substrate using oxynitride interlayer
02/10/2005US20050029678 Growth of single crystal nanowires
02/10/2005US20050028888 Interface containing Group 3 nitride; stress relieving
02/10/2005US20050028728 Method for fabricating a diamond film having low surface roughness
02/10/2005US20050028725 Method and apparatus for manufacturing single crystal
02/10/2005US20050028724 Acentric lithium borate crystals, method for making, and applications thereof
02/10/2005CA2533934A1 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
02/10/2005CA2533630A1 Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
02/10/2005CA2518349A1 Rapid generation of nanoparticles from bulk solids at room temperature
02/09/2005EP1505375A1 Method for producing the sensing element of an ultra-violet indicator
02/09/2005EP1505179A1 Procedure for identifying weakly binding molecule fragments with ligand properties with the molecule fragments being applied to the crystal as micro-drops of a corresponding solution
02/09/2005EP1504368A2 Method for crystallizing human gsk3 and novel crystal structure thereof
02/09/2005CN1577744A Coated semiconductor wafer, and process and device for producing the semiconductor wafer
02/09/2005CN1577717A Discharge electrode, discharge lamp and method for producing discharge electrode
02/09/2005CN1577510A Substrate for magnetic recording medium and producing method thereof, and magnetic recording medium
02/08/2005US6852253 Thickness of substrate subject to growth made larger than or equal to 200 mu m and curvature thereof made smaller than or equal to 0.03 cm-1, curvature caused by difference in thermal expansion coefficients of the base and substrate